CN1822378A - 具有衍射透镜的图像传感器及其制造方法 - Google Patents
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Abstract
本发明公开了一种包括衍射透镜的图像传感器,其简化了制造工艺,并使光损失最小化。该图像传感器包括衍射透镜,作为滤色器部分与光电二极管之间的内部透镜,用于补偿对接收到的光的灵敏度。一种用于制造图像传感器的方法,其包括以下步骤:形成衍射透镜,作为滤色器部分与光电二极管之间的内部透镜,用于补偿对接收到的光的灵敏度。所述衍射透镜的形成包括以下步骤:形成平坦化层,其设置于透射在光电二极管处接收的光的光透射层之上,用于在其之上形成层;用光刻胶涂覆平坦化层,并利用光刻胶形成衍射图样;以及蚀刻用于形成衍射透镜的衍射图样。
Description
相关申请的交叉引用
本申请要求于2004年12月30日提交的第10-2004-0116469号韩国专利申请的优先权,其全部内容结合于此供参考。
技术领域
本发明涉及一种具有衍射透镜(diffractive lens)的图像传感器及其制造方法,更具体地,涉及一种具有能够简化制造工艺并最小化光损失的衍射透镜的图像传感器。
背景技术
图像传感器是一种用于将光学图像转换成电信号的半导体器件,电信号可以被储存、传输、或显示。这样的图像传感器可分为电荷耦合器件(CCD),其基于硅半导体;或者互补金属氧化物半导体(CMOS)。电荷耦合器件和CMOS型图像传感器都在检测入射光当中使用光电二极管。在对应的光电二极管阵列之上设置滤色器层阵列,以构成彩色图像传感器。
用于增强图像传感器的光接收能力的光学微透镜系统使用了衍射透镜,该衍射透镜用于衍射对透镜表面的光入射,并将光聚焦到配置在透镜之下的光电二极管上。该透镜通过基于常规的蚀刻工艺形成用于透镜部分的光刻胶的图样,并对该图样进行用于将该图样成形为凸透镜形状的热处理而制成。然而,热处理具有一个限制,该限制在于形成小于365nm的图样,即在于使用I线光源过程中的分辨率,该光源是形成图样中当前所用的典型光源。
发明内容
因此,本发明旨在提供一种图像传感器及其制造方法,其能很好地解决由于相关技术的局限性和缺陷导致的一个或多个问题。
本发明的一个目的在于,提供一种CMOS图像传感器,其具有简单的结构,提高了分辨率参数,减少了制造过程中要形成的层数,以及最小化了光损失。
本发明的一个目的在于,提供一种制造上述图像传感器的方法。
本发明的其它优点、目的、和特征将在随后的说明中部分地阐述,并且,对于本领域的技术人员而言,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在所写的说明书、权利要求书、以及附图中所特别指出的结构来实现和获得。
为获得根据本发明的实施例的这些目的和其他优点,如已概括和充分说明的,提供了一种图像传感器,其包括:衍射透镜,作为滤色器部分与光电二极管之间的内部透镜,用于补偿对接收到的光的灵敏度。
在本发明的另一方面中,提供了一种用于制造图像传感器的方法,该方法包括以下步骤:形成衍射透镜,作为滤色器部分与光电二极管之间的内部透镜,用于补偿对接收到的光的灵敏度,所述衍射透镜的形成包括以下步骤:形成平坦化层,其设置于用于透射在光电二极管处接收的光的光透射层之上,用于在其之上形成层;用光刻胶涂覆平坦化层,并利用光刻胶形成衍射图样;以及蚀刻用于形成衍射透镜的衍射图样。
应该理解,以上对本发明的一般性描述和以下的详细描述都是示例性和说明性质的,目的在于对要求保护的本发明提供进一步的说明。
附图说明
附图构成本说明书的一部分,有助于进一步理解本发明,这些附图示出了本发明的一些实施例,并可与说明书一起用来说明本发明的原理。附图中:
图1是具有衍射透镜的图像传感器的原理图;以及
图2是根据本发明的一优选实施例的衍射透镜的波带片的平面图。
具体实施方式
以下将详细参照本发明的优选实施例,其实例在附图中示出。尽可能地,在所有附图中使用相同的参考标号表示相同或相似的部件。
应用了本发明的图像传感器通过以下步骤来制造:通过常规的CMOS或CCD工艺在硅衬底上形成可将光信号转换成电信号的光电二极管,以及形成用于启动读操作的栅极和布线。然后,为了能够实现色分离,即,彩色图像传感器,用片上(on-chip)方法在如此制造的图像传感器上形成滤色器,金属布线层用作光遮蔽。
图1示出了具有衍射透镜的图像传感器。
参照图1,该图像传感器包括:光电二极管区10,配置于图像传感器的下部;平坦化层12,其在光电二极管区之上形成,当将光透射到光电二极管区时,用于,并提供了一个表面,在该表面上形成上部层;内部透镜层14,其在平坦化层12上形成,并包括多个对应于光电二极管区的光电二极管的衍射透镜18;以及滤色器层16,形成于内部透镜层14上。透射穿过滤色器层16的滤色器的光由内部透镜层14的衍射透镜会聚,以通过在下面的平坦化层12传送至光电二极管。
该图像传感器是由金属布线层(即遮光层)的形成(其作为最终程序来执行,结果形成了大致等于金属布线的厚度的台阶)来完成的。需要有平坦化层12以克服该台阶(即,不平坦的部分),利用二氧化硅基的材料或氮化硅基的材料对该台阶进行钝化,以保护金属布线和提高可靠性,本发明使用涂覆至0.5~2.0μm厚度的二氧化硅类(silicon dioxide group)材料。平坦化提供了用于容纳内部透镜层14和滤色器层16的水平面,它们顺序地形成在氮化层上。通过化学机械抛光或干法深蚀刻工艺(dry etch-back process)进行平坦化的平坦化材料,可以是任何对可见波长呈现合适的折射指数和良好的透射性的材料。用光刻胶涂覆平坦化表面至0.5~1.0μm厚度,以及对光刻胶进行用于形成衍射图样的光刻。
图2示出了根据本发明的一优选实施例的衍射透镜的波带片,其中,波带片中的暗区域20表示未蚀刻部分,即,保留的光刻胶;以及亮区域22表示蚀刻部分。可通过公知方法制造这种衍射透镜,这导致衍射透镜上一系列逐步前进的台阶的形成。例如,尽管可利用各种照相掩模(photo-mask),优选地,也可采用灰度掩模或黑/白掩模来制造衍射透镜。灰度掩模是黑/白掩模的一种变更,以区分用于按要求形成衍射透镜的一部分的透射光的量。黑/白掩模通过使用多台阶黑/白掩模形成阶梯状(台梯形)部分。
如果是堆叠的光电二极管,则可通过改变波带片的尺寸来改变焦点,以改变聚焦光在透射穿过硅表面后,与给定的堆叠的光电二极管相遇的点。当没有滤色器时,堆叠的光电二极管使得能够有窄波带对应于焦点。
随后,可通过常规的滤色器制造方法制造滤色器。例如,在形成衍射透镜之后,执行用于形成滤色器的平坦化工艺。因为光电二极管本身对色差不敏感,所以滤色器部分可用有机材料形成,该有机材料用于关于每个像素颜色信息的选择性调节。
在滤色器阵列上多个微透镜的形成可在根据本发明的图像传感器中省略掉,这是因为衍射透镜对接收到的光进行了足够的补偿。尽管如此,可根据要求在滤色器层上额外地提供这种微透镜。
通过采用本发明的图像传感器,其中内部透镜设置为衍射透镜,能够通过取消热处理而简化制造工艺。此外,穿过透镜系统的光学(光)信号中光能的损失可通过阻挡区的倒相而减少。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种图像传感器,包括:
衍射透镜,作为滤色器部分与光电二极管之间的内部透镜,用于补偿对接收到的光的灵敏度。
2.根据权利要求1所述的图像传感器,还包括:
微透镜,形成于所述滤色器部分之上,用于接收和会聚光。
3.一种用于制造图像传感器的方法,其包括以下步骤:
形成衍射透镜,作为滤色器部分与光电二极管之间的内部透镜,用于补偿对接收到的光的灵敏度。
4.根据权利要求3所述的方法,所述衍射透镜的形成包括以下步骤:
形成平坦化层,其设置于透射在所述光电二极管处接收的光的光透射层之上,用于在其之上形成层;
用光刻胶涂覆所述平坦化层,并利用所述光刻胶形成衍射图样;以及
蚀刻用于形成所述衍射透镜的所述衍射图样。
5.根据权利要求4所述的方法,其中所述光刻胶厚度为0.5~1.0μm。
6.根据权利要求4所述的方法,其中使用照相掩模蚀刻所述光刻胶来制造所述衍射透镜。
7.根据权利要求4所述的方法,其中使用灰度掩模蚀刻所述光刻胶来制造所述衍射透镜。
8.根据权利要求4所述的方法,其中使用黑/白掩模蚀刻所述光刻胶来制造所述衍射透镜。
9.根据权利要求3所述的方法,还包括以下步骤:
在所述滤色器部分之上形成用于接收和会聚光的微透镜。
10.根据权利要求4所述的方法,形成所述平坦化层的材料是二氧化硅类材料或氮化硅类材料。
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KR1020040116469 | 2004-12-30 | ||
KR1020040116469A KR20060077567A (ko) | 2004-12-30 | 2004-12-30 | 회절렌즈를 이용한 이미지센서 |
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CN101183663B (zh) * | 2006-11-13 | 2010-06-02 | 东部高科股份有限公司 | 图像传感器及其制造方法 |
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EP2908341B1 (en) * | 2014-02-18 | 2018-07-11 | ams AG | Semiconductor device with surface integrated focusing element |
EP3529648A4 (en) * | 2016-10-20 | 2020-06-10 | 3M Innovative Properties Company | CAMOUFLAGE OF AN OPTICAL WINDOW OF A DEVICE |
US10297629B2 (en) | 2017-09-11 | 2019-05-21 | Semiconductor Components Industries, Llc | Image sensors with in-pixel lens arrays |
US10283543B2 (en) * | 2017-09-28 | 2019-05-07 | Semiconductor Components Industries, Llc | Image sensors with diffractive lenses |
US10312280B2 (en) * | 2017-09-28 | 2019-06-04 | Semiconductor Components Industries, Llc | Image sensors with diffractive lenses for stray light control |
US10483309B1 (en) | 2018-09-07 | 2019-11-19 | Semiductor Components Industries, Llc | Image sensors with multipart diffractive lenses |
US10957727B2 (en) * | 2018-09-26 | 2021-03-23 | Semiconductor Components Industries, Llc | Phase detection pixels with diffractive lenses |
KR20210142617A (ko) * | 2019-03-19 | 2021-11-25 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 센서 칩, 전자 기기 및 거리측정 장치 |
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US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
US20050045927A1 (en) * | 2003-09-03 | 2005-03-03 | Jin Li | Microlenses for imaging devices |
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CN101183663B (zh) * | 2006-11-13 | 2010-06-02 | 东部高科股份有限公司 | 图像传感器及其制造方法 |
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