CN1810394A - 应用集成电路废弃硅片生产太阳能电池用硅片的制造方法 - Google Patents
应用集成电路废弃硅片生产太阳能电池用硅片的制造方法 Download PDFInfo
- Publication number
- CN1810394A CN1810394A CNA200510062114XA CN200510062114A CN1810394A CN 1810394 A CN1810394 A CN 1810394A CN A200510062114X A CNA200510062114X A CN A200510062114XA CN 200510062114 A CN200510062114 A CN 200510062114A CN 1810394 A CN1810394 A CN 1810394A
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon wafer
- solar cell
- hno
- waste
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 121
- 239000010703 silicon Substances 0.000 title claims abstract description 121
- 239000002699 waste material Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 150000002739 metals Chemical class 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 4
- 150000003624 transition metals Chemical class 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 3
- 235000012431 wafers Nutrition 0.000 claims description 97
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000006172 buffering agent Substances 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 239000013078 crystal Substances 0.000 abstract description 23
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 239000012535 impurity Substances 0.000 abstract description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 10
- 229910021332 silicide Inorganic materials 0.000 abstract description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000036632 reaction speed Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/20—Waste processing or separation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200510062114XA CN100571911C (zh) | 2005-12-19 | 2005-12-19 | 应用集成电路废弃硅片生产太阳能电池用硅片的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200510062114XA CN100571911C (zh) | 2005-12-19 | 2005-12-19 | 应用集成电路废弃硅片生产太阳能电池用硅片的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1810394A true CN1810394A (zh) | 2006-08-02 |
CN100571911C CN100571911C (zh) | 2009-12-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB200510062114XA Expired - Fee Related CN100571911C (zh) | 2005-12-19 | 2005-12-19 | 应用集成电路废弃硅片生产太阳能电池用硅片的制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN100571911C (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102306687A (zh) * | 2011-09-28 | 2012-01-04 | 湖南红太阳新能源科技有限公司 | 一种晶体硅太阳能电池pecvd彩虹片返工方法 |
CN102343352A (zh) * | 2010-07-26 | 2012-02-08 | 比亚迪股份有限公司 | 一种太阳能硅片的回收方法 |
CN102496657A (zh) * | 2011-12-27 | 2012-06-13 | 湖南红太阳新能源科技有限公司 | 一种改善晶硅太阳能电池片中异常片的方法 |
CN101909770B (zh) * | 2008-01-10 | 2014-05-07 | 学校法人芝浦工业大学 | 有用金属的再循环方法 |
CN105845774A (zh) * | 2016-04-06 | 2016-08-10 | 东莞市祖科能源科技有限公司 | 利用废弃硅片或废弃电池片或电池片制作光伏太阳能电池板的方法 |
WO2017100443A1 (en) * | 2015-12-10 | 2017-06-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Recovery of valuable or toxic metals from silicon solar cells |
CN107457250A (zh) * | 2017-07-19 | 2017-12-12 | 中国环境科学研究院 | 一种晶体硅太阳能电池片资源分类回收方法 |
CN108339831A (zh) * | 2018-02-09 | 2018-07-31 | 中南大学 | 硅太阳电池的处置方法 |
CN109830577A (zh) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | 一种高质量发光二极管的制造方法 |
-
2005
- 2005-12-19 CN CNB200510062114XA patent/CN100571911C/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101909770B (zh) * | 2008-01-10 | 2014-05-07 | 学校法人芝浦工业大学 | 有用金属的再循环方法 |
CN102343352A (zh) * | 2010-07-26 | 2012-02-08 | 比亚迪股份有限公司 | 一种太阳能硅片的回收方法 |
CN102343352B (zh) * | 2010-07-26 | 2014-03-12 | 比亚迪股份有限公司 | 一种太阳能硅片的回收方法 |
CN102306687A (zh) * | 2011-09-28 | 2012-01-04 | 湖南红太阳新能源科技有限公司 | 一种晶体硅太阳能电池pecvd彩虹片返工方法 |
CN102496657A (zh) * | 2011-12-27 | 2012-06-13 | 湖南红太阳新能源科技有限公司 | 一种改善晶硅太阳能电池片中异常片的方法 |
WO2017100443A1 (en) * | 2015-12-10 | 2017-06-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Recovery of valuable or toxic metals from silicon solar cells |
US10385421B2 (en) | 2015-12-10 | 2019-08-20 | Arizona Board Of Regents On Behalf Of Arizona State University | Recovery of valuable or toxic metals from silicon solar cells |
CN105845774A (zh) * | 2016-04-06 | 2016-08-10 | 东莞市祖科能源科技有限公司 | 利用废弃硅片或废弃电池片或电池片制作光伏太阳能电池板的方法 |
CN107457250A (zh) * | 2017-07-19 | 2017-12-12 | 中国环境科学研究院 | 一种晶体硅太阳能电池片资源分类回收方法 |
CN108339831A (zh) * | 2018-02-09 | 2018-07-31 | 中南大学 | 硅太阳电池的处置方法 |
CN108339831B (zh) * | 2018-02-09 | 2020-11-24 | 中南大学 | 硅太阳电池的处置方法 |
CN109830577A (zh) * | 2019-01-18 | 2019-05-31 | 重庆市妙格科技有限公司 | 一种高质量发光二极管的制造方法 |
CN109830577B (zh) * | 2019-01-18 | 2021-06-15 | 深圳市广盛浩科技有限公司 | 一种高质量发光二极管的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100571911C (zh) | 2009-12-23 |
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Free format text: CORRECT: ADDRESS; FROM: 310027 ROOM 720, HUANGHONGNIAN SCIENCE AND TECHNOLOGY COMPREHENSIVE BUILDING, QIUSHI VILLAGE, ZHEJIANG UNIVERSITY, NO.147, YUGU ROAD, XIHU DISTRICT, HANGZHOU CITY, ZHEJIANG PROVINCE TO: 314200 ROOM 2024, BUILDING 3, NORTH OF FANRONG ROAD, EAST OF PINGHU AVENUE, PINGHU ECONOMIC DEVELOPMENT ZONE, JIAXING CITY, ZHEJIANG PROVINCE |
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Effective date of registration: 20100917 Address after: 2024, room 3, building 314200, north of prosperity Road, Pinghu Road, Pinghu Economic Development Zone, Jiaxing, Zhejiang Patentee after: Zhejiang Dongyuan Electronics Co., Ltd. Address before: Hangzhou City, Zhejiang province 310027 Xihu District Ancient Jade Road 147, Zhejiang Hongnian Huang Qiu Shi Cun Science and Technology Building Room 720 Patentee before: Liu Peidong |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Ningbo Jingyuan Solar Energy Co., Ltd. Assignor: Zhejiang Dongyuan Electronics Co., Ltd. Contract record no.: 2011330000964 Denomination of invention: Production process of silicon wafter for solar cell with waste IC chips Granted publication date: 20091223 License type: Exclusive License Open date: 20060802 Record date: 20110715 |
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Granted publication date: 20091223 Termination date: 20131219 |