CN1793923A - 一种水溶性CdTe/CdS核/壳型量子点的制备方法 - Google Patents
一种水溶性CdTe/CdS核/壳型量子点的制备方法 Download PDFInfo
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- CN1793923A CN1793923A CN 200510111833 CN200510111833A CN1793923A CN 1793923 A CN1793923 A CN 1793923A CN 200510111833 CN200510111833 CN 200510111833 CN 200510111833 A CN200510111833 A CN 200510111833A CN 1793923 A CN1793923 A CN 1793923A
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- Prior art keywords
- cadmium
- cdte
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000002096 quantum dot Substances 0.000 claims abstract description 52
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000002243 precursor Substances 0.000 claims abstract description 20
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 11
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000001661 cadmium Chemical class 0.000 claims abstract description 6
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 6
- 239000011591 potassium Substances 0.000 claims abstract description 6
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims abstract description 5
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 229910000033 sodium borohydride Inorganic materials 0.000 claims abstract description 4
- 239000012279 sodium borohydride Substances 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 claims description 4
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 claims description 4
- 229910000059 tellane Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- 229910000011 cadmium carbonate Inorganic materials 0.000 claims description 2
- PLLZRTNVEXYBNA-UHFFFAOYSA-L cadmium hydroxide Chemical compound [OH-].[OH-].[Cd+2] PLLZRTNVEXYBNA-UHFFFAOYSA-L 0.000 claims description 2
- 229940075417 cadmium iodide Drugs 0.000 claims description 2
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 claims description 2
- GKDXQAKPHKQZSC-UHFFFAOYSA-L cadmium(2+);carbonate Chemical compound [Cd+2].[O-]C([O-])=O GKDXQAKPHKQZSC-UHFFFAOYSA-L 0.000 claims description 2
- KTTSJTVLWUJJMN-UHFFFAOYSA-L cadmium(2+);dichlorate Chemical compound [Cd+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O KTTSJTVLWUJJMN-UHFFFAOYSA-L 0.000 claims description 2
- PSIBWKDABMPMJN-UHFFFAOYSA-L cadmium(2+);diperchlorate Chemical compound [Cd+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PSIBWKDABMPMJN-UHFFFAOYSA-L 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 claims description 2
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 1
- XONPDZSGENTBNJ-UHFFFAOYSA-N molecular hydrogen;sodium Chemical compound [Na].[H][H] XONPDZSGENTBNJ-UHFFFAOYSA-N 0.000 claims 1
- 238000001782 photodegradation Methods 0.000 abstract description 18
- 230000005855 radiation Effects 0.000 abstract description 8
- -1 sodium telluride hydride Chemical class 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003550 marker Substances 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 37
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 8
- 239000004054 semiconductor nanocrystal Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000002189 fluorescence spectrum Methods 0.000 description 3
- 239000007850 fluorescent dye Substances 0.000 description 3
- 239000002159 nanocrystal Substances 0.000 description 3
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 3
- 229910000105 potassium hydride Inorganic materials 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000090 biomarker Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- QTANTQQOYSUMLC-UHFFFAOYSA-O Ethidium cation Chemical compound C12=CC(N)=CC=C2C2=CC=C(N)C=C2[N+](CC)=C1C1=CC=CC=C1 QTANTQQOYSUMLC-UHFFFAOYSA-O 0.000 description 1
- 108060003951 Immunoglobulin Proteins 0.000 description 1
- 102000004338 Transferrin Human genes 0.000 description 1
- 108090000901 Transferrin Proteins 0.000 description 1
- LQWCJVQHKJHKDZ-UHFFFAOYSA-N cadmium sulfuric acid Chemical compound [Cd].S(O)(O)(=O)=O LQWCJVQHKJHKDZ-UHFFFAOYSA-N 0.000 description 1
- BJHNOFIZTODKMI-UHFFFAOYSA-L cadmium(2+);diiodate Chemical compound [Cd+2].[O-]I(=O)=O.[O-]I(=O)=O BJHNOFIZTODKMI-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 102000018358 immunoglobulin Human genes 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000012581 transferrin Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
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- Luminescent Compositions (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101118336A CN100567986C (zh) | 2005-12-22 | 2005-12-22 | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101118336A CN100567986C (zh) | 2005-12-22 | 2005-12-22 | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN1793923A true CN1793923A (zh) | 2006-06-28 |
CN100567986C CN100567986C (zh) | 2009-12-09 |
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CNB2005101118336A Expired - Fee Related CN100567986C (zh) | 2005-12-22 | 2005-12-22 | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 |
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CN (1) | CN100567986C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100523119C (zh) * | 2006-09-07 | 2009-08-05 | 南开大学 | 水溶性核/壳型CdTe/Cd(OH)2纳米晶粒的水相制备方法 |
US20120103789A1 (en) * | 2010-10-28 | 2012-05-03 | Syracuse University | Greener Synthesis of Nanoparticles Using Fine Tuned Hydrothermal Routes |
CN102519883A (zh) * | 2011-12-30 | 2012-06-27 | 南开大学 | 一种激光染料噁嗪1高氯酸盐量子效率的测量方法 |
CN103323587A (zh) * | 2013-06-28 | 2013-09-25 | 天津农学院 | 一种量子点标记的夹心荧光免疫检测吡虫啉的方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1174080C (zh) * | 2002-10-10 | 2004-11-03 | 武汉大学 | CdSe/CdS或CdSe/ZnS核/壳型量子点的制备方法 |
CN1560633A (zh) * | 2004-02-19 | 2005-01-05 | 上海交通大学 | 用作生物医学荧光探针的量子点微球的制备方法 |
CN1304524C (zh) * | 2004-02-20 | 2007-03-14 | 财团法人工业技术研究院 | ZnX(X=S,Se,Te)量子点的制备方法 |
CN1234601C (zh) * | 2004-04-29 | 2006-01-04 | 上海交通大学 | 晒化镉量子点的控温微波水相合成方法 |
CN1306003C (zh) * | 2005-04-28 | 2007-03-21 | 复旦大学 | 一种水溶性CdTe/CdS 核/壳型量子点的微波制备方法 |
CN1693206A (zh) * | 2005-04-28 | 2005-11-09 | 复旦大学 | 水溶性碲化镉量子点的程序控制微波制备方法 |
-
2005
- 2005-12-22 CN CNB2005101118336A patent/CN100567986C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100523119C (zh) * | 2006-09-07 | 2009-08-05 | 南开大学 | 水溶性核/壳型CdTe/Cd(OH)2纳米晶粒的水相制备方法 |
US20120103789A1 (en) * | 2010-10-28 | 2012-05-03 | Syracuse University | Greener Synthesis of Nanoparticles Using Fine Tuned Hydrothermal Routes |
CN102519883A (zh) * | 2011-12-30 | 2012-06-27 | 南开大学 | 一种激光染料噁嗪1高氯酸盐量子效率的测量方法 |
CN103323587A (zh) * | 2013-06-28 | 2013-09-25 | 天津农学院 | 一种量子点标记的夹心荧光免疫检测吡虫啉的方法 |
Also Published As
Publication number | Publication date |
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CN100567986C (zh) | 2009-12-09 |
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Owner name: WEIMING OPTOELECTRONIC YANCHENG CO., LTD. Free format text: FORMER OWNER: FUDAN UNIVERSITY Effective date: 20140106 |
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Free format text: CORRECT: ADDRESS; FROM: 200433 YANGPU, SHANGHAI TO: 224007 YANCHENG, JIANGSU PROVINCE |
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Effective date of registration: 20140106 Address after: 224007 in Jiangsu province in the south of Yancheng City District of Yandu Road No. 9000-7 Patentee after: WEIMING PHOTOELECTRIC YANCHENG CO., LTD. Address before: 220 Handan Road, Shanghai, No. 200433 Patentee before: Fudan University |
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ASS | Succession or assignment of patent right |
Owner name: FANGYUAN GLOBAL YANCHENG PHOTOELECTRIC TECHNOLOGY Free format text: FORMER OWNER: WEIMING OPTOELECTRONIC YANCHENG CO., LTD. Effective date: 20150205 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 224007 YANCHENG, JIANGSU PROVINCE TO: 224000 YANCHENG, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20150205 Address after: 224000, Yancheng City, Jiangsu province Chengnan New Town of wisdom science and technology innovation base Patentee after: FANGYUAN GLOBAL YANCHENG PHOTOELECTRIC TECHNOLOGY CO., LTD. Address before: 224007 in Jiangsu province in the south of Yancheng City District of Yandu Road No. 9000-7 Patentee before: WEIMING PHOTOELECTRIC YANCHENG CO., LTD. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091209 Termination date: 20151222 |
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