CN100567986C - 一种水溶性CdTe/CdS核/壳型量子点的制备方法 - Google Patents
一种水溶性CdTe/CdS核/壳型量子点的制备方法 Download PDFInfo
- Publication number
- CN100567986C CN100567986C CNB2005101118336A CN200510111833A CN100567986C CN 100567986 C CN100567986 C CN 100567986C CN B2005101118336 A CNB2005101118336 A CN B2005101118336A CN 200510111833 A CN200510111833 A CN 200510111833A CN 100567986 C CN100567986 C CN 100567986C
- Authority
- CN
- China
- Prior art keywords
- cadmium
- cdte
- quantum dot
- preparation
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101118336A CN100567986C (zh) | 2005-12-22 | 2005-12-22 | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101118336A CN100567986C (zh) | 2005-12-22 | 2005-12-22 | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1793923A CN1793923A (zh) | 2006-06-28 |
CN100567986C true CN100567986C (zh) | 2009-12-09 |
Family
ID=36805490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101118336A Expired - Fee Related CN100567986C (zh) | 2005-12-22 | 2005-12-22 | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100567986C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100523119C (zh) * | 2006-09-07 | 2009-08-05 | 南开大学 | 水溶性核/壳型CdTe/Cd(OH)2纳米晶粒的水相制备方法 |
US20120103789A1 (en) * | 2010-10-28 | 2012-05-03 | Syracuse University | Greener Synthesis of Nanoparticles Using Fine Tuned Hydrothermal Routes |
CN102519883A (zh) * | 2011-12-30 | 2012-06-27 | 南开大学 | 一种激光染料噁嗪1高氯酸盐量子效率的测量方法 |
CN103323587A (zh) * | 2013-06-28 | 2013-09-25 | 天津农学院 | 一种量子点标记的夹心荧光免疫检测吡虫啉的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1403379A (zh) * | 2002-10-10 | 2003-03-19 | 武汉大学 | CdSe/CdS或CdSe/ZnS核/壳型量子点的制备方法 |
CN1560633A (zh) * | 2004-02-19 | 2005-01-05 | 上海交通大学 | 用作生物医学荧光探针的量子点微球的制备方法 |
CN1569619A (zh) * | 2004-04-29 | 2005-01-26 | 上海交通大学 | 高质量硒化镉量子点的控温微波水相合成方法 |
CN1657589A (zh) * | 2004-02-20 | 2005-08-24 | 财团法人工业技术研究院 | ZnX(X=S,Se,Te)量子点的制备方法 |
CN1693206A (zh) * | 2005-04-28 | 2005-11-09 | 复旦大学 | 水溶性碲化镉量子点的程序控制微波制备方法 |
CN1693207A (zh) * | 2005-04-28 | 2005-11-09 | 复旦大学 | 一种水溶性CdTe/CdS 核/壳型量子点的微波制备方法 |
-
2005
- 2005-12-22 CN CNB2005101118336A patent/CN100567986C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1403379A (zh) * | 2002-10-10 | 2003-03-19 | 武汉大学 | CdSe/CdS或CdSe/ZnS核/壳型量子点的制备方法 |
CN1560633A (zh) * | 2004-02-19 | 2005-01-05 | 上海交通大学 | 用作生物医学荧光探针的量子点微球的制备方法 |
CN1657589A (zh) * | 2004-02-20 | 2005-08-24 | 财团法人工业技术研究院 | ZnX(X=S,Se,Te)量子点的制备方法 |
CN1569619A (zh) * | 2004-04-29 | 2005-01-26 | 上海交通大学 | 高质量硒化镉量子点的控温微波水相合成方法 |
CN1693206A (zh) * | 2005-04-28 | 2005-11-09 | 复旦大学 | 水溶性碲化镉量子点的程序控制微波制备方法 |
CN1693207A (zh) * | 2005-04-28 | 2005-11-09 | 复旦大学 | 一种水溶性CdTe/CdS 核/壳型量子点的微波制备方法 |
Non-Patent Citations (4)
Title |
---|
以胶体粒子为模板制备核壳纳米复合粒子. 官建国等.化学进展,第16卷第3期. 2004 |
以胶体粒子为模板制备核壳纳米复合粒子. 官建国等.化学进展,第16卷第3期. 2004 * |
微波法制备无机纳米材料的研究进展. 关英勋等.化工时刊,第18卷第6期. 2004 |
微波法制备无机纳米材料的研究进展. 关英勋等.化工时刊,第18卷第6期. 2004 * |
Also Published As
Publication number | Publication date |
---|---|
CN1793923A (zh) | 2006-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1306003C (zh) | 一种水溶性CdTe/CdS 核/壳型量子点的微波制备方法 | |
CN109705845B (zh) | 一种低污染的高效率钙钛矿量子点及其制备方法 | |
CN100569899C (zh) | 水溶性ZnCdSe量子点的水热制备方法 | |
CN102181293B (zh) | 一种水溶性Zn掺杂CdTe量子点CdxZn1-xTe的制备方法 | |
CN100383216C (zh) | 一种ZnSe/ZnS核/壳型量子点的制备方法 | |
CN108585030B (zh) | 一种颜色可调的小尺寸Mn:CsPbCl3纳米晶的制备方法 | |
Li et al. | One-step synthesis of Sc2W3O12: Eu3+ phosphors with tunable luminescence for WLED | |
CN100567986C (zh) | 一种水溶性CdTe/CdS核/壳型量子点的制备方法 | |
CN102517024A (zh) | 一种CdSeS 量子点的水相微波制备方法 | |
CN1693206A (zh) | 水溶性碲化镉量子点的程序控制微波制备方法 | |
CN101831711A (zh) | 一种水溶性ZnSe量子点的微波制备方法 | |
CN112779005A (zh) | 一种强蓝光碳量子点及应用 | |
CN101787285A (zh) | 水溶性荧光ZnSe/ZnS核壳量子点的制备方法 | |
WO2018103629A1 (zh) | 一种基于圆偏振光的手性量子棒的合成方法 | |
Zhang et al. | Deep-red emissive colloidal lead-based triiodide perovskite/telluride nanoscale heterostructures with reduced surface defects and enhanced stability for indoor lighting applications | |
CN101619487B (zh) | 一种p型导电性的碘化亚铜单晶体及其水热生长方法 | |
CN108753284B (zh) | 一种高荧光红光发射的Mn:CsPbCl3纳米簇的制备方法 | |
CN102887489A (zh) | 一种微波辐射制备水溶性近红外碲化镉量子点的方法 | |
CN102071453B (zh) | 室温下一锅法制备高质量水相半导体纳米晶的方法 | |
Khanna et al. | CaWO4: Eu3+, Dy3+, Tb3+ phosphor crystals for solid-state lighting applications | |
CN102191038A (zh) | 一种在水相中低温制备CdTe量子点的方法 | |
CN103694997B (zh) | 一种合成蓝紫色发光ZnCdS/ZnS核壳结构纳米晶的方法 | |
CN105668529A (zh) | 一种碲化镉量子点及其制备方法 | |
CN103320135B (zh) | 酸性条件下CdZnTe量子点的水相制备方法 | |
CN107267137A (zh) | 一种水相量子点的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: WEIMING OPTOELECTRONIC YANCHENG CO., LTD. Free format text: FORMER OWNER: FUDAN UNIVERSITY Effective date: 20140106 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200433 YANGPU, SHANGHAI TO: 224007 YANCHENG, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140106 Address after: 224007 in Jiangsu province in the south of Yancheng City District of Yandu Road No. 9000-7 Patentee after: WEIMING PHOTOELECTRIC YANCHENG CO., LTD. Address before: 220 Handan Road, Shanghai, No. 200433 Patentee before: Fudan University |
|
ASS | Succession or assignment of patent right |
Owner name: FANGYUAN GLOBAL YANCHENG PHOTOELECTRIC TECHNOLOGY Free format text: FORMER OWNER: WEIMING OPTOELECTRONIC YANCHENG CO., LTD. Effective date: 20150205 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 224007 YANCHENG, JIANGSU PROVINCE TO: 224000 YANCHENG, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150205 Address after: 224000, Yancheng City, Jiangsu province Chengnan New Town of wisdom science and technology innovation base Patentee after: FANGYUAN GLOBAL YANCHENG PHOTOELECTRIC TECHNOLOGY CO., LTD. Address before: 224007 in Jiangsu province in the south of Yancheng City District of Yandu Road No. 9000-7 Patentee before: WEIMING PHOTOELECTRIC YANCHENG CO., LTD. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091209 Termination date: 20151222 |
|
EXPY | Termination of patent right or utility model |