CN1789487A - 淀积金属化合物层的方法和用于淀积金属化合物层的设备 - Google Patents

淀积金属化合物层的方法和用于淀积金属化合物层的设备 Download PDF

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Publication number
CN1789487A
CN1789487A CNA2005101369870A CN200510136987A CN1789487A CN 1789487 A CN1789487 A CN 1789487A CN A2005101369870 A CNA2005101369870 A CN A2005101369870A CN 200510136987 A CN200510136987 A CN 200510136987A CN 1789487 A CN1789487 A CN 1789487A
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CN
China
Prior art keywords
source gas
metal compound
flow velocity
compound layer
gas
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Pending
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CNA2005101369870A
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English (en)
Chinese (zh)
Inventor
徐廷勳
朴泳旭
洪镇基
具京范
李殷泽
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1789487A publication Critical patent/CN1789487A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CNA2005101369870A 2004-12-13 2005-12-13 淀积金属化合物层的方法和用于淀积金属化合物层的设备 Pending CN1789487A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020040104741 2004-12-13
KR20040104741 2004-12-13
KR1020050049565 2005-06-10

Publications (1)

Publication Number Publication Date
CN1789487A true CN1789487A (zh) 2006-06-21

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ID=36787604

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005101369870A Pending CN1789487A (zh) 2004-12-13 2005-12-13 淀积金属化合物层的方法和用于淀积金属化合物层的设备

Country Status (3)

Country Link
KR (1) KR100596495B1 (ko)
CN (1) CN1789487A (ko)
TW (1) TW200619414A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101320765A (zh) * 2007-06-05 2008-12-10 株式会社半导体能源研究所 光电转换装置的制造方法
CN108695193A (zh) * 2017-03-30 2018-10-23 株式会社日立国际电气 基板处理方法、记录介质和基板处理装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5087657B2 (ja) 2009-08-04 2012-12-05 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5610438B2 (ja) 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5722595B2 (ja) * 2010-11-11 2015-05-20 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR101830976B1 (ko) * 2011-06-30 2018-02-22 삼성디스플레이 주식회사 원자층 증착장치
US20130143415A1 (en) * 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
US9514933B2 (en) 2014-01-05 2016-12-06 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
KR102518932B1 (ko) * 2023-01-27 2023-04-06 (주)브이아이테크 탄화규소 증착장치의 mts증착가스 제어시스템

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363088B1 (ko) * 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
JP4528413B2 (ja) 2000-04-25 2010-08-18 日鉱金属株式会社 気相成長方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101320765A (zh) * 2007-06-05 2008-12-10 株式会社半导体能源研究所 光电转换装置的制造方法
CN101320765B (zh) * 2007-06-05 2015-11-25 株式会社半导体能源研究所 光电转换装置的制造方法
CN108695193A (zh) * 2017-03-30 2018-10-23 株式会社日立国际电气 基板处理方法、记录介质和基板处理装置
CN108695193B (zh) * 2017-03-30 2022-03-18 株式会社国际电气 基板处理方法、记录介质和基板处理装置

Also Published As

Publication number Publication date
KR20060066602A (ko) 2006-06-16
TW200619414A (en) 2006-06-16
KR100596495B1 (ko) 2006-07-04

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Open date: 20060621