CN1782867B - 制造半导体器件的标线片和方法 - Google Patents
制造半导体器件的标线片和方法 Download PDFInfo
- Publication number
- CN1782867B CN1782867B CN2005100590809A CN200510059080A CN1782867B CN 1782867 B CN1782867 B CN 1782867B CN 2005100590809 A CN2005100590809 A CN 2005100590809A CN 200510059080 A CN200510059080 A CN 200510059080A CN 1782867 B CN1782867 B CN 1782867B
- Authority
- CN
- China
- Prior art keywords
- critical dimension
- straight line
- center line
- dimension pattern
- chip area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004344474A JP4972278B2 (ja) | 2004-11-29 | 2004-11-29 | レチクル及び半導体装置の製造方法 |
JP2004344474 | 2004-11-29 | ||
JP2004-344474 | 2004-11-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1782867A CN1782867A (zh) | 2006-06-07 |
CN1782867B true CN1782867B (zh) | 2010-05-05 |
Family
ID=36567758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100590809A Expired - Fee Related CN1782867B (zh) | 2004-11-29 | 2005-03-21 | 制造半导体器件的标线片和方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7405025B2 (zh) |
JP (1) | JP4972278B2 (zh) |
KR (1) | KR100643626B1 (zh) |
CN (1) | CN1782867B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5061520B2 (ja) * | 2006-07-18 | 2012-10-31 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体ウェーハ |
US8039366B2 (en) * | 2009-02-19 | 2011-10-18 | International Business Machines Corporation | Method for providing rotationally symmetric alignment marks for an alignment system that requires asymmetric geometric layout |
US9411223B2 (en) * | 2012-09-10 | 2016-08-09 | Globalfoundries Inc. | On-product focus offset metrology for use in semiconductor chip manufacturing |
US9411249B2 (en) | 2013-09-23 | 2016-08-09 | Globalfoundries Inc. | Differential dose and focus monitor |
US9659873B2 (en) | 2015-08-26 | 2017-05-23 | United Microelectronics Corp. | Semiconductor structure with aligning mark and method of forming the same |
CN106707697B (zh) * | 2017-01-04 | 2018-10-26 | 上海华虹宏力半导体制造有限公司 | 芯片的图形尺寸检测方法 |
US11100272B2 (en) * | 2018-08-17 | 2021-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer-to-design image analysis (WDIA) system |
KR20210073178A (ko) | 2019-12-10 | 2021-06-18 | 삼성전자주식회사 | 스크라이브 레인을 갖는 반도체 소자들 및 그 형성 방법 |
CN115616867B (zh) * | 2021-12-03 | 2024-01-12 | 和舰芯片制造(苏州)股份有限公司 | 一种光罩上对最小线宽制程监控的方法 |
CN114236973B (zh) * | 2021-12-14 | 2024-03-08 | 上海华力集成电路制造有限公司 | 提升拼接工艺窗口容许度的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5868560A (en) * | 1997-03-31 | 1999-02-09 | Mitsubishi Denki Kabushiki Kaisha | Reticle, pattern transferred thereby, and correction method |
TW382746B (en) * | 1998-01-14 | 2000-02-21 | Mitsubishi Electric Corp | Reticle and method and apparatus for exposure using the reticle |
US6093511A (en) * | 1994-06-30 | 2000-07-25 | Fujitsu Limited | Method of manufacturing semiconductor device |
US6558852B1 (en) * | 1999-06-30 | 2003-05-06 | Kabushiki Kaisha Toshiba | Exposure method, reticle, and method of manufacturing semiconductor device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6074525A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2874261B2 (ja) * | 1990-03-19 | 1999-03-24 | 富士通株式会社 | 投影露光マスク |
JPH03269433A (ja) * | 1990-03-19 | 1991-12-02 | Fujitsu Ltd | 投影露光マスク |
JP3110669B2 (ja) * | 1996-01-29 | 2000-11-20 | 川崎製鉄株式会社 | 半導体装置の製造方法 |
JP3592518B2 (ja) * | 1998-04-07 | 2004-11-24 | 宮城沖電気株式会社 | 半導体装置及びその製造方法 |
US6569587B2 (en) * | 1999-01-29 | 2003-05-27 | Fuji Electric Imaging Co., Ltd. | Photosensitive body for electrophotography and manufacturing method for the same |
US6569584B1 (en) * | 2001-06-29 | 2003-05-27 | Xilinx, Inc. | Methods and structures for protecting reticles from electrostatic damage |
US6773939B1 (en) * | 2001-07-02 | 2004-08-10 | Advanced Micro Devices, Inc. | Method and apparatus for determining critical dimension variation in a line structure |
US6815128B2 (en) * | 2002-04-01 | 2004-11-09 | Micrel, Inc. | Box-in-box field-to-field alignment structure |
US6664121B2 (en) * | 2002-05-20 | 2003-12-16 | Nikon Precision, Inc. | Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool |
JP4078257B2 (ja) * | 2003-06-27 | 2008-04-23 | 株式会社日立ハイテクノロジーズ | 試料寸法測定方法及び荷電粒子線装置 |
US7241538B2 (en) * | 2003-11-05 | 2007-07-10 | Promos Technologies | Method for providing representative features for use in inspection of photolithography mask and for use in inspection photo-lithographically developed and/or patterned wafer layers, and products of same |
US7642101B2 (en) * | 2006-12-05 | 2010-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having in-chip critical dimension and focus patterns |
-
2004
- 2004-11-29 JP JP2004344474A patent/JP4972278B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-28 KR KR1020050016490A patent/KR100643626B1/ko not_active IP Right Cessation
- 2005-02-28 US US11/066,154 patent/US7405025B2/en not_active Expired - Fee Related
- 2005-03-21 CN CN2005100590809A patent/CN1782867B/zh not_active Expired - Fee Related
-
2008
- 2008-06-26 US US12/213,908 patent/US7642103B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6093511A (en) * | 1994-06-30 | 2000-07-25 | Fujitsu Limited | Method of manufacturing semiconductor device |
US5868560A (en) * | 1997-03-31 | 1999-02-09 | Mitsubishi Denki Kabushiki Kaisha | Reticle, pattern transferred thereby, and correction method |
TW382746B (en) * | 1998-01-14 | 2000-02-21 | Mitsubishi Electric Corp | Reticle and method and apparatus for exposure using the reticle |
US6114072A (en) * | 1998-01-14 | 2000-09-05 | Mitsubishi Denki Kabushiki Kaisha | Reticle having interlocking dicing regions containing monitor marks and exposure method and apparatus utilizing same |
US6558852B1 (en) * | 1999-06-30 | 2003-05-06 | Kabushiki Kaisha Toshiba | Exposure method, reticle, and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US7642103B2 (en) | 2010-01-05 |
US7405025B2 (en) | 2008-07-29 |
KR100643626B1 (ko) | 2006-11-10 |
JP4972278B2 (ja) | 2012-07-11 |
KR20060059765A (ko) | 2006-06-02 |
CN1782867A (zh) | 2006-06-07 |
JP2006154265A (ja) | 2006-06-15 |
US20060115743A1 (en) | 2006-06-01 |
US20080274568A1 (en) | 2008-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081017 Address after: Tokyo, Japan, Japan Applicant after: Fujitsu Microelectronics Ltd. Address before: Kawasaki, Kanagawa, Japan Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20170321 |