CN1745456B - 用于基片加工的设备 - Google Patents
用于基片加工的设备 Download PDFInfo
- Publication number
- CN1745456B CN1745456B CN2004800021229A CN200480002122A CN1745456B CN 1745456 B CN1745456 B CN 1745456B CN 2004800021229 A CN2004800021229 A CN 2004800021229A CN 200480002122 A CN200480002122 A CN 200480002122A CN 1745456 B CN1745456 B CN 1745456B
- Authority
- CN
- China
- Prior art keywords
- carrier
- electrode
- clamping
- substrate
- framework
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
层 | 硅晶片 | 胶粘剂 | 薄膜 | 背面气体 |
热导率[W/mK] | 150 | 0.1 | 0.2 | |
厚度[μm] | 200 | 20 | 100 | |
k值[W/m<sup>2</sup>K] | 7.5×10<sup>5</sup> | 5×10<sup>3</sup> | 2×10<sup>3</sup> | 50 |
热阻% | ≈0 | ≈1 | ≈2 | ≈97 |
层 | 硅晶片 | 胶粘剂 | 薄膜 | 背面气体 |
热导率[W/mK] | 150 | 0.1 | 0.2 | |
厚度[μm] | 200 | 20 | 100 | |
k值[W/m<sup>2</sup>K] | 7.5×10<sup>5</sup> | 5×10<sup>3</sup> | 2×10<sup>3</sup> | 10 |
热阻% | ≈0 | ≈0 | ≈0 | ≈99 |
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43974503P | 2003-01-13 | 2003-01-13 | |
US60/439,745 | 2003-01-13 | ||
PCT/CH2004/000010 WO2004064122A1 (de) | 2003-01-13 | 2004-01-13 | Anlage zur bearbeitung eines substrats |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1745456A CN1745456A (zh) | 2006-03-08 |
CN1745456B true CN1745456B (zh) | 2010-06-09 |
Family
ID=32713511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800021229A Expired - Fee Related CN1745456B (zh) | 2003-01-13 | 2004-01-13 | 用于基片加工的设备 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7736462B2 (zh) |
EP (1) | EP1604384B1 (zh) |
JP (1) | JP4354983B2 (zh) |
KR (1) | KR101132451B1 (zh) |
CN (1) | CN1745456B (zh) |
AT (1) | ATE426245T1 (zh) |
DE (1) | DE502004009174D1 (zh) |
TW (1) | TWI327336B (zh) |
WO (1) | WO2004064122A1 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004002243A1 (de) * | 2003-02-07 | 2004-09-16 | Trikon Technologies Limited, Newport | Elektrostatische Klemmhalterung für dünne Wafer in einer Vakuumkammer zur Plasmabearbeitung |
KR100964775B1 (ko) * | 2005-10-12 | 2010-06-21 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리방법 |
US20070217119A1 (en) * | 2006-03-17 | 2007-09-20 | David Johnson | Apparatus and Method for Carrying Substrates |
DE102006013517A1 (de) * | 2006-03-23 | 2007-09-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur elektrostatischen Fixierung von Substraten mit polarisierbaren Molekülen |
DE102006013516A1 (de) * | 2006-03-23 | 2007-10-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur elektrostatischen Fixierung von Substraten mit leitfähiger Schicht |
WO2008083002A1 (en) * | 2006-12-26 | 2008-07-10 | Fujifilm Dimatix, Inc. | Printing system with conductive element |
ES2345121T3 (es) * | 2007-02-02 | 2010-09-15 | Applied Materials, Inc. | Camara de proceso, instalacion de recubrimiento en linea y procedimiento para tratar un sustrato. |
KR100856019B1 (ko) * | 2008-02-22 | 2008-09-02 | (주)타이닉스 | 플라즈마 처리장치의 기판 홀더 |
TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
JP2010010207A (ja) * | 2008-06-24 | 2010-01-14 | Tokyo Ohka Kogyo Co Ltd | 剥離装置および剥離方法 |
US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
JP5731485B2 (ja) | 2009-05-15 | 2015-06-10 | インテグリス・インコーポレーテッド | ポリマー突起を有する静電チャック |
US8859424B2 (en) * | 2009-08-14 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor wafer carrier and method of manufacturing |
KR101731136B1 (ko) | 2010-05-28 | 2017-04-27 | 엔테그리스, 아이엔씨. | 표면저항이 높은 정전 척 |
JP5591859B2 (ja) * | 2012-03-23 | 2014-09-17 | 株式会社東芝 | 基板の分離方法及び分離装置 |
KR101970301B1 (ko) | 2012-07-11 | 2019-04-18 | 삼성전자주식회사 | 웨이퍼 테스트 장치 |
KR20150053775A (ko) * | 2012-09-07 | 2015-05-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 얇은 기판들을 위한 포터블 정전 척 캐리어 |
KR101877339B1 (ko) * | 2012-12-20 | 2018-07-11 | 주식회사 원익아이피에스 | 기판처리시스템의 기판캐리어 및 그를 가지는 기판처리시스템 |
JP5621142B2 (ja) * | 2013-04-02 | 2014-11-05 | 独立行政法人産業技術総合研究所 | 半導体プロセス用キャリア |
US9460950B2 (en) * | 2013-12-06 | 2016-10-04 | Applied Materials, Inc. | Wafer carrier for smaller wafers and wafer pieces |
JP5959069B2 (ja) * | 2014-07-14 | 2016-08-02 | 国立研究開発法人産業技術総合研究所 | 半導体プロセス用キャリア |
JP6555656B2 (ja) * | 2015-02-17 | 2019-08-07 | パナソニックIpマネジメント株式会社 | プラズマ処理装置および電子部品の製造方法 |
TWI582898B (zh) * | 2016-06-22 | 2017-05-11 | Linco Technology Co Ltd | Movable disk drive for production lines |
KR102323877B1 (ko) * | 2016-09-28 | 2021-11-10 | 한국전자통신연구원 | 전기 도금 장치 |
KR102548233B1 (ko) * | 2017-11-28 | 2023-06-27 | 도쿄엘렉트론가부시키가이샤 | 처리 장치 |
GB201815258D0 (en) * | 2018-09-19 | 2018-10-31 | Spts Technologies Ltd | A support |
JP7085968B2 (ja) * | 2018-11-15 | 2022-06-17 | 株式会社荏原製作所 | 基板ホルダ、めっき装置および基板のめっき方法 |
US11094573B2 (en) * | 2018-11-21 | 2021-08-17 | Applied Materials, Inc. | Method and apparatus for thin wafer carrier |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
US5539179A (en) * | 1990-11-17 | 1996-07-23 | Tokyo Electron Limited | Electrostatic chuck having a multilayer structure for attracting an object |
US5708557A (en) * | 1996-08-22 | 1998-01-13 | Packard Hughes Interconnect Company | Puncture-resistant electrostatic chuck with flat surface and method of making the same |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4743570A (en) * | 1979-12-21 | 1988-05-10 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
JP2767282B2 (ja) * | 1989-05-30 | 1998-06-18 | 日本真空技術株式会社 | 基板保持装置 |
JP3064409B2 (ja) * | 1990-11-30 | 2000-07-12 | 株式会社日立製作所 | 保持装置およびそれを用いた半導体製造装置 |
EP0553612B1 (en) * | 1992-01-07 | 1996-08-21 | Hitachi Chemical Co., Ltd. | Polyimides, thermosetting resin compositions containing the polyimides, formed articles of the resin compositions, and production process of the polyimides |
US5729423A (en) | 1994-01-31 | 1998-03-17 | Applied Materials, Inc. | Puncture resistant electrostatic chuck |
US5886863A (en) * | 1995-05-09 | 1999-03-23 | Kyocera Corporation | Wafer support member |
JPH10303286A (ja) | 1997-02-25 | 1998-11-13 | Applied Materials Inc | 静電チャック及び半導体製造装置 |
US5737178A (en) * | 1997-03-06 | 1998-04-07 | Applied Materials, Inc. | Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks |
US6276072B1 (en) * | 1997-07-10 | 2001-08-21 | Applied Materials, Inc. | Method and apparatus for heating and cooling substrates |
US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
US6117778A (en) * | 1998-02-11 | 2000-09-12 | International Business Machines Corporation | Semiconductor wafer edge bead removal method and tool |
US6259592B1 (en) * | 1998-11-19 | 2001-07-10 | Applied Materials, Inc. | Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same |
US6238160B1 (en) * | 1998-12-02 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd' | Method for transporting and electrostatically chucking a semiconductor wafer or the like |
JP2000288857A (ja) | 1999-03-31 | 2000-10-17 | Shibaura Mechatronics Corp | 静電チャック装置及び載置台 |
TW492135B (en) * | 2000-05-25 | 2002-06-21 | Tomoegawa Paper Co Ltd | Adhesive sheets for static electricity chuck device, and static electricity chuck device |
KR100378187B1 (ko) * | 2000-11-09 | 2003-03-29 | 삼성전자주식회사 | 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법 |
JP4663133B2 (ja) * | 2001-01-09 | 2011-03-30 | 不二越機械工業株式会社 | ウェーハの貼付方法及びその装置 |
US6491083B2 (en) * | 2001-02-06 | 2002-12-10 | Anadigics, Inc. | Wafer demount receptacle for separation of thinned wafer from mounting carrier |
US6837374B2 (en) | 2001-07-15 | 2005-01-04 | Entegris, Inc. | 300MM single stackable film frame carrier |
KR100890790B1 (ko) * | 2001-08-27 | 2009-03-31 | 파나소닉 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US6642127B2 (en) * | 2001-10-19 | 2003-11-04 | Applied Materials, Inc. | Method for dicing a semiconductor wafer |
JP4034096B2 (ja) * | 2002-03-19 | 2008-01-16 | 日本碍子株式会社 | 半導体支持装置 |
US6547559B1 (en) * | 2002-05-20 | 2003-04-15 | Veeco Instruments, Inc. | Clamping of a semiconductor substrate for gas-assisted heat transfer in a vacuum chamber |
-
2003
- 2003-12-29 TW TW092137279A patent/TWI327336B/zh not_active IP Right Cessation
-
2004
- 2004-01-13 AT AT04701565T patent/ATE426245T1/de not_active IP Right Cessation
- 2004-01-13 EP EP04701565A patent/EP1604384B1/de not_active Expired - Lifetime
- 2004-01-13 US US10/542,075 patent/US7736462B2/en not_active Expired - Fee Related
- 2004-01-13 CN CN2004800021229A patent/CN1745456B/zh not_active Expired - Fee Related
- 2004-01-13 JP JP2006500451A patent/JP4354983B2/ja not_active Expired - Fee Related
- 2004-01-13 DE DE502004009174T patent/DE502004009174D1/de not_active Expired - Lifetime
- 2004-01-13 WO PCT/CH2004/000010 patent/WO2004064122A1/de active Application Filing
- 2004-01-13 KR KR1020057012966A patent/KR101132451B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5539179A (en) * | 1990-11-17 | 1996-07-23 | Tokyo Electron Limited | Electrostatic chuck having a multilayer structure for attracting an object |
US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
US5708557A (en) * | 1996-08-22 | 1998-01-13 | Packard Hughes Interconnect Company | Puncture-resistant electrostatic chuck with flat surface and method of making the same |
Also Published As
Publication number | Publication date |
---|---|
ATE426245T1 (de) | 2009-04-15 |
EP1604384B1 (de) | 2009-03-18 |
CN1745456A (zh) | 2006-03-08 |
TW200423282A (en) | 2004-11-01 |
KR20050092749A (ko) | 2005-09-22 |
US7736462B2 (en) | 2010-06-15 |
DE502004009174D1 (de) | 2009-04-30 |
WO2004064122A1 (de) | 2004-07-29 |
JP2006518930A (ja) | 2006-08-17 |
KR101132451B1 (ko) | 2012-03-30 |
TWI327336B (en) | 2010-07-11 |
JP4354983B2 (ja) | 2009-10-28 |
US20060108231A1 (en) | 2006-05-25 |
EP1604384A1 (de) | 2005-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1745456B (zh) | 用于基片加工的设备 | |
KR101822318B1 (ko) | 반도체 처리를 위한 평면형 열적 존을 갖는 열적 플레이트 | |
US6081414A (en) | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system | |
US8633423B2 (en) | Methods and apparatus for controlling substrate temperature in a process chamber | |
US9343347B2 (en) | Portable electrostatic chuck carrier for thin substrates | |
CN101420816B (zh) | 容性耦合等离子体反应器 | |
US5079481A (en) | Plasma-assisted processing magneton with magnetic field adjustment | |
US20030010292A1 (en) | Electrostatic chuck with dielectric coating | |
WO2003079404A2 (en) | An improved substrate holder for plasma processing | |
KR102659429B1 (ko) | 기판 지지 장치 및 기판 처리 장치 | |
US20130105087A1 (en) | Solar wafer electrostatic chuck | |
CN110382732A (zh) | 高吞吐量真空沉积源及系统 | |
KR101775361B1 (ko) | 플라즈마 처리장치 | |
CN100576488C (zh) | 一种晶片夹持装置 | |
CN101378029B (zh) | 双电极静电卡盘 | |
CN101339916B (zh) | 静电卡盘 | |
KR101812049B1 (ko) | 무선 주파수(rf) 및 직류(dc) 에너지를 하나 또는 그 초과의 공통 전극들에 커플링시키기 위한 캐패시터 어셈블리들 | |
JP2001217304A (ja) | 基板ステージ、それを用いた基板処理装置および基板処理方法 | |
KR102387279B1 (ko) | 지지 유닛 및 이를 이용한 기판 처리 장치 | |
US20240096680A1 (en) | Electrostatic chuck assembly for plasma processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OERLIKON ADVANCED TECHNOLOGIES AG Free format text: FORMER OWNER: OC OERLIKON BALZERS AG Effective date: 20140724 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140724 Address after: Liechtenstein Barr Che J Patentee after: Oerlikon sophisticated technologies stock company Address before: Liechtenstein Barr Che J Patentee before: OC Oerlikon Balzers AG |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100609 Termination date: 20160113 |