CN1722022A - 环形带传输装置以及图像形成装置 - Google Patents

环形带传输装置以及图像形成装置 Download PDF

Info

Publication number
CN1722022A
CN1722022A CNA2005100874923A CN200510087492A CN1722022A CN 1722022 A CN1722022 A CN 1722022A CN A2005100874923 A CNA2005100874923 A CN A2005100874923A CN 200510087492 A CN200510087492 A CN 200510087492A CN 1722022 A CN1722022 A CN 1722022A
Authority
CN
China
Prior art keywords
endless belt
mentioned
image
unit
mother metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2005100874923A
Other languages
English (en)
Other versions
CN1722022B (zh
Inventor
伊藤道明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Data Corp filed Critical Oki Data Corp
Publication of CN1722022A publication Critical patent/CN1722022A/zh
Application granted granted Critical
Publication of CN1722022B publication Critical patent/CN1722022B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/01—Apparatus for electrographic processes using a charge pattern for producing multicoloured copies
    • G03G15/0105—Details of unit
    • G03G15/0131—Details of unit for transferring a pattern to a second base
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/14—Apparatus for electrographic processes using a charge pattern for transferring a pattern to a second base
    • G03G15/16—Apparatus for electrographic processes using a charge pattern for transferring a pattern to a second base of a toner pattern, e.g. a powder pattern, e.g. magnetic transfer
    • G03G15/1665—Apparatus for electrographic processes using a charge pattern for transferring a pattern to a second base of a toner pattern, e.g. a powder pattern, e.g. magnetic transfer by introducing the second base in the nip formed by the recording member and at least one transfer member, e.g. in combination with bias or heat
    • G03G15/167—Apparatus for electrographic processes using a charge pattern for transferring a pattern to a second base of a toner pattern, e.g. a powder pattern, e.g. magnetic transfer by introducing the second base in the nip formed by the recording member and at least one transfer member, e.g. in combination with bias or heat at least one of the recording member or the transfer member being rotatable during the transfer
    • G03G15/1685—Structure, details of the transfer member, e.g. chemical composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G2215/00—Apparatus for electrophotographic processes
    • G03G2215/01—Apparatus for electrophotographic processes for producing multicoloured copies
    • G03G2215/0103—Plural electrographic recording members
    • G03G2215/0119—Linear arrangement adjacent plural transfer points
    • G03G2215/0138—Linear arrangement adjacent plural transfer points primary transfer to a recording medium carried by a transport belt
    • G03G2215/0141—Linear arrangement adjacent plural transfer points primary transfer to a recording medium carried by a transport belt the linear arrangement being horizontal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G2215/00—Apparatus for electrophotographic processes
    • G03G2215/16—Transferring device, details
    • G03G2215/1604—Main transfer electrode
    • G03G2215/1623—Transfer belt

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electrostatic Charge, Transfer And Separation In Electrography (AREA)
  • Moulding By Coating Moulds (AREA)

Abstract

一种环形带，将记录介质传送到图像形成部分并从对应的图像形成部分将色粉图像转印到记录介质。环形带具有表面电阻率和体积电阻率，其中，表面电阻率和体积电阻率满足0.3≤(logρs－logρv)≤1.3，其中，ρs是对环形带施加500V电压10秒后测量的以Ω/□为单位的表面电阻率，ρv是对环形带施加250V电压10秒后测量的以Ω·cm为单位的体积电阻率。

Description

环形带传输装置以及图像形成装置
技术领域
本发明涉及以电子照片方式在记录介质上形成图像的装置如打印机、复印机、传真机等。具体地说，本发明涉及具备将记录介质传送到色粉图像形成部分的环形带传输装置的图像形成装置。
背景技术
传统的图像形成装置采用环形带传输装置。由于通过环形带传输装置来对印刷介质施加电压，环形带必须具备某些特别的电气特性。例如，为了获得高质量的图像，将环形带的表面电阻值设定在规定范围中。
上述传统的环形带仅是在常温常湿下制造成使表面电阻值在特定范围。因而，在温度及湿度变化导致环形带传输装置工作环境条件发生变化时，环形带的表面电阻发生变化，不能够维持均一的转印性能。因此，传统的环形带传输装置不足以获得高画质。
发明内容
本发明的目的是提供能够维持均一且良好的转印性能并得到高画质的环形带。
本发明的另一目的是提供环形带，它具备满足0.3≤(logρs-logρv)≤1.3的表面电阻率ρs和体积电阻率ρv。
环形带将记录介质传送到图像形成部分并从对应的图像形成部分将色粉图像转印到记录介质。环形带具有表面电阻率和体积电阻率，其中，表面电阻率和体积电阻率满足0.3≤(logρs-logρv)≤1.3，其中，ρs是对环形带施加500V电压10秒后测量的以Ω/□为单位的表面电阻率，ρv是对环形带施加250V电压10秒后测量的以Ω·cm为单位的体积电阻率。
环形带具有单层结构。
环形带由杨氏模量不小于200MPa的母材制成。
环形带的母材是聚酰胺-酰亚胺。
环形带的母材是聚酰亚胺。
环形带含有纳米碳。
环形带采用离心成型制成。
环形带采用组合模制成。
一种图像形成装置，包含上述环形带，该装置包括：感光鼓；对该感光鼓的表面充电的充电单元；对感光鼓的充电表面照射以形成静电潜像的曝光单元；利用色粉使静电潜像显像的显像单元；将可视图像转印到上述环形带传输的记录介质的转印单元。
从以下详细的说明可明白本发明进一步的应用范围。然而，应理解详细说明和特定示例只是说明本发明的最佳实施例，这是因为通过该详细说明，本领域技术人员可在本发明精神和范围内进行不同改变和变更。
附图说明
通过如下具体说明及附图将可以更好理解本发明，且说明及附图仅仅是示例而不是限制本发明，其中：
图1是本发明的图像形成装置的侧视图。
图2是环形带传输装置的透视图。
图3A、3B是说明环形带的表面电阻率的测量方法的图，图3A是俯视图，3B是侧视图。
图4A、4B是说明环形带的体积电阻率的测量方法的图，图4A是俯视图，4B是侧视图。
图5A表示在典型环境条件下采用再生率100％的纸进行半色调印刷时的转印结果。
图5B表示在典型环境条件下采用再生率100％的纸进行实地印刷时的转印结果。
图5C表示在典型环境条件下采用幻灯片作为印刷介质进行半色调印刷时的转印结果。
图5D表示在典型环境条件下采用幻灯片作为印刷介质进行实地印刷时的转印结果。
图6A是组合模的外部模的俯视图。
图6B是组合模的外部模的侧视图。
图6C是组合模的内部模的侧视图。
图7是内部模插入外部模时的侧视图。
图8是表示在温度28℃、湿度85％的环境下对再生率100％的纸进行印刷时的环形带的表面温度和印刷页数之间的关系图。
具体实施例
以下参照附图详细说明本发明。
实施例1
图1是本发明的彩色图像形成装置的侧视图。图2是环形带传输装置的透视图。对于与图1相同的部件赋予相同的符号。
如图1，彩色图像形成装置具备：环形带传输装置、4台色粉图像形成部分7、供应辊17、配准辊18、以及定像部19。如图2，环形带传输装置具备：环形带1、驱动辊2、带框3、张紧辊4以及4个转印辊8。
环形带1由可自由旋转地被支持在带框3上的驱动辊2以及张紧辊4输送。推进部件(未图示)推进张紧辊4，以使其向环形带1提供张力。在带框3上，旋转自由地支持着4个转印辊8。在与各个转印辊8相对的位置上，分别配置色粉图像形成部分7，其形成图像的颜色分别为：黄、洋红、青、黑。
色粉图像形成部分7沿环形带传输方向排列。各个图像形成部分7具备：中空圆筒状的感光鼓5、对该感光鼓5的表面充电的充电单元6、对感光鼓的充电表面照射以形成静电潜像的曝光单元9、利用色粉使静电潜像显像的显像装置11、将可视图像转印到记录介质的转印辊8以及清扫转印后的感光鼓5表面的清洁单元12。
供应辊17将印刷介质供给配准辊18，然后由配准辊使印刷介质和环形带的偏移最小化。然后，配准辊18使印刷介质进入色粉图像形成部分7，时间上与感光鼓5上的图像形成相配合。印刷介质向箭头A方向传送，通过4台图像形成装置7。在印刷介质通过4台图像形成装置7时，对应颜色的色粉图像通过转印辊8的推进力和静电力依次转印到印刷介质上。然后，印刷介质送至定像部19，在定像部19印刷介质上的色粉图像被加压和加热之后熔化成永久的全色图像。最后，印刷介质从图像形成装置排出。
本发明的环形带传输装置采用的环形带具有如下表面电阻率以及体积电阻率：
实验导出实施例1的环形带的特征。根据日本工业标准K6911(JISK6911)，采用环形电极对环形带施加500V电压10秒后测量环形带的表面电阻率ρs(Ω/□)。并施加200V电压10秒后测量环形带的体积电阻率ρv(Ω·cm)。则x确定如下：
x＝logρs-logρv...(1)
其中，log为常用对数，x称作“差分”。
图3A、3B是说明环形带的表面电阻率ρs的测量方法的图。图3A是俯视图，3B是侧视图。图4A、4B是说明环形带的体积电阻率ρv的测量方法的图。图4A是俯视图，4B是侧视图。参考图3、图4，环形电极用于测量表面电阻率ρs以及体积电阻率ρv。环形电极包括配置在环形带的样品22的表面侧的圆盘形的电极21以及圆环形的电极23、以及配置在环形带的样品22的背面侧的平板形的电极24。
如图3B所示，在测量表面电阻率ρs时，作为表面电极采用与样品表面侧接触的电极21以及23，作为保护电极采用与样品背面侧接触的电极24，在表面电极21、23之间施加500V电压10秒后测量表面电阻率。
如图4B所示，在测量体积电阻率ρv时，作为表面电极采用电极21，作为保护电极采用与样品表面侧接触的电极23，作为背面电极采用电极24，电极21、23与样品表面侧接触。在表面电极21、背面电极24之间施加250V电压10秒后测量出体积电阻率。
环形带的母材是耐久性以及机械特性良好的聚酰亚胺。加入碳黑以呈现导电性。利用离心成形将材料成形为环形带，其厚度为100μm、直径为226mm。因此，环形带具有单层结构。
通过改变聚酰胺-酰亚胺和碳黑的比例，能够改变环形带的差分x。增加碳黑的含量可导致体积电阻率的变化比表面电阻率大，因此能够作成差分x不同的环形带。该实验中，制造和测试6种不同环形带，差分x分别为x＝0.1、0.3、0.6、0.8、1.3、1.5。
然后进行印刷，研究上述不同差分x的环形带的转印性能。
作为印刷介质，采用再生率100％的A4纸和A4幻灯片(OHP)。选择是基于下述理由。再生率100％的纸易于吸湿且干燥快，其电阻易受到环境条件的显著影响。再生纸完全由再生纸浆制造，没有新纸浆。与文件纸相比，再生纸具有粗糙表面，因此色粉图像难以从感光鼓转印到纸上。因而很难维持均一的转印性。另一方面，幻灯片的表面电阻极大，受温度影响大，因此很难维持均一的转印性能。环形带若采用上述2种印刷介质能够获得良好转印性能，则在普通纸上形成图像的情况下，能够获得极其良好的转印性能。
作为代表性的环境条件选择如下：温度10℃/湿度20％RH、温度23℃/湿度50％RH、温度28℃/湿度85％RH。
作为测试的印刷图案，使用浓度50％的所谓的半色调图案和浓度为100％的所谓的实地印刷图案。这是基于下述理由。由于半色调图案在感光鼓上的每单位面积的色粉浓度低，故能够以较小的电压进行转印。实地印刷由于在感光鼓的整个表面附着色粉，因而具有高浓度，在转印时需要较大的电压。在实际转印时，要求环形带在一张印刷介质上均匀转印随机混和的多种图案。
图5A-5D是表示环形带的差分x和转印性能的关系的图。图5A是在代表性的环境条件下采用再生率100％的纸进行半色调印刷的结果，5B是在代表性的环境条件下采用再生率100％的纸进行实地印刷的结果。5C是在代表性的环境条件下采用幻灯片进行半色调印刷的结果，5D是在代表性的环境条件下采用幻灯片进行实地印刷的结果。
判定如下述进行：在半色调印刷的情况下，印刷50％浓度的测试图案、在实地印刷的情况下，印刷100％浓度的测试图案。曝光单元9对感光鼓5的充电表面照射以在感光鼓5上形成静电潜像。然后，显像装置11对静电潜像施加色粉以形成色粉图像。然后色粉图像转印到印刷介质上并熔化成永久图像。在上述电子照相处理对黑、黄、紫、洋红中的每种颜色重复10次后，检测转印到印刷介质上的色粉图像。如图5A-5D，“○”、“△”、“×”的记号是表示转印性能程度的记号，“○”表示转印性能良好的情况，表示没有发现模糊、污点或漏点等的图像缺陷。“△”表示转印性能稍有劣化，即图像中出现一处缺陷和至少一个图像发现这样的缺陷。“×”表示转印性能劣化，表示在一个图像中出现2处以上的图像缺陷。这里，当不只一处出现图像缺陷时，图像中的缺陷部分及其周边的浓度显著下降。当进行普通的文字印刷时，这样的图像缺陷使得印刷的文字不可识别。
在低温低湿下，较大差分x会产生因放电使色粉粒子飞散引起的模糊、污点等的图像缺陷。在图5中，差分x＝1.5的环形带为这种情况。同样，在低温低湿下，较小差分x也会产生因放电使色粉粒子飞散引起的模糊、污点等的图像缺陷。在高温高湿下，较小差分x也会产生转印电流的泄漏现象引起的漏点的图像缺陷。在图5中，差分x＝0.1的环形带为这种情况。
如图5，差分x为0.3≤x≤1.3范围内的环形带在温度10℃/湿度20％RH、温度23℃/湿度50％RH、温度28℃/湿度85％RH的所有的环境下，对于采用再生率100％的纸介质和幻灯片的半色调印刷以及实地印刷中能够得到均一且良好的转印性能。
这里，该实施例1的环形带的x满足
0.3≤x≤1.3...(2)
其中，x＝(logρs-logρv)
如上所述，根据实施例1，通过使x为0.3≤x≤1.3，即使在温度以及湿度发生变化导致使用环境条件发生变化的情况下，也能够获得均一且良好的转印性能，能够获得高图像质量。
本发明的环形带的材料，不仅限于上述实施例1中使用的聚酰胺-酰亚胺，也可以是使用中其变形在一定范围内的材料。例如，杨氏模量为不小于200Mpa的聚酰亚胺、聚碳酸脂、聚酰胺等的树脂。
为了增加导电性，可以单独或组合地使用金属氧化物、导电聚合物和离子导电剂。
实施例2
本发明实施例2的图像形成装置的结构以及动作与上述实施例1相同。
上述实施例1的环形带的特征在于，其差分x满足上述(2)式的条件，而该实施例2的环形带的特征在于，在满足上述(2)式的环形带之中作为呈现导电性的材料含有纳米碳。
上述纳米碳为直径70nm到160nm左右、长度15到20μm左右的纤维状，也称作纳米纤维，具有所谓的碳化纤维和所谓的碳纳米管(carbon nano tube)之间程度的直径。在该实施例2中，使用直径80nm到150nm的纳米碳。
以下，进行实验以评价实施例2的环形带的效果。准备x＝0.6的环形带A和x＝0.8的环形带B。作为比较例，还准备x＝0.6的环形带C。
如下确定环形带A、B、C的x：按照日本工业标准K6911(JISK6911)，采用图3所示的同样的测量方法测量表面电阻率，采用图4所示的同样的测量方法测量体积电阻率。
环形带A、B的母材使用耐久性以及机械特性良好的聚酰亚胺，为了呈现导电性，加入直径80nm、长度20μm的纳米碳。利用图6A-6C所示的组合模，不需使金属模旋转，将材料成形为环形带，其厚度为100μm、直径为226mm。
图6A-6C的组合模由中空圆筒形的外部模31和圆柱形的实心内部模33构成。图6A是外部模31的俯视图，图6B是外部模31的侧视图，图6C是内部模33的侧视图。图7是内部模33插入外部模31时的侧视图。如图6B所示，将材料32(液态的聚酰亚胺或聚酰亚胺的原料的熔融体)注入到外部模31，然后在外部模31盛装的材料32中浸入内部模33。使外部模31以及内部模33固定，直到冷却或者加热使材料32凝固后才开模。这样，环形带A、B的都具有单层结构。
环形带C采用与环形带A、B同样的材料制成，但是用氮化硅代替了纳米碳。环形带C采用与环形带A、B同样的方式制成。
对于环形带A、B以及C，对预定的印刷页数研究环形带的表面温度特性。
在温度28℃/湿度85％RH的环境下，在再生率100％的A4纸上以具有50％浓度的半色调印刷图案进行印刷。
图8是表示在温度28℃/湿度85％RH的环境下对再生率100％的纸进行印刷时的环形带的表面温度和印刷页数之间的关系的图。
参考图8，随着印刷页数增加，环形带A及B的表面温度只有少量上升。而随着印刷页数增加，环形带C的表面温度上升较大。环形带A、B的表面温度少量上升表明纳米碳的散热特性非常好。
由于受放置图像形成装置的温度湿度环境的影响、以及由于图像形成装置内的发热，图像形成装置内部的温度一般较高。环形带的表面温度上升会引起以下的问题。环形带的表面热量传递到感光鼓5，容易引起位于其附近的部件的热膨胀、热劣化。当表面温度超过预定值时，可中断印刷直到环形带的表面温度降低到周围部件的温度，从而可防止图像形成装置的内部温度上升的问题。然而，图像形成装置采用上述方法工作时导致大量的不工作时间，效率低下。
在实施例2采用散热特性良好的纳米碳作为使环形带呈现导电性的材料，从而解决了上述的问题。
根据实施例2，x在0.3≤x≤1.3的范围。为了提供导电性，在环形带的材料中加入纳米碳。这样，能够使环形带的表面温度上升最小化。即使在温度以及湿度变化导致环境条件变化时，也能够维持良好转印性并进行高质量的印刷。
在实施例1、2中，对于在电子照片打印机使用的环形带进行了说明。也能够将本发明的环形带适用于利用电子照片方式在记录介质上形成图像的图像形成装置，如复印机以及传真机等。
如上述的本发明明显可在许多方面进行改变。这些改变没有脱离本发明的精神和范围，对于专业技术人员来说明显的所有这些改变包括在权利要求书的范围内。

Claims (12)

1.一种环形带，将记录介质传送到图像形成部分并从上述图像形成部分将色粉图像转印到上述记录介质，上述环形带具有：
表面电阻率；和
体积电阻率，
其中，上述表面电阻率和上述体积电阻率满足0.3≤(logρs-logρv)≤1.3，其中，ρs是对上述环形带施加500V电压10秒后测量的以Ω/口为单位的表面电阻率，ρv是对上述环形带施加250V电压10秒后测量的以Ω·cm为单位的体积电阻率。
2.如权利要求1所述的环形带，其特征在于，
上述环形带具有单层结构。
3.如权利要求1所述的环形带，其特征在于，
上述环形带由杨氏模量不小于200MPa的母材制成。
4.如权利要求3所述的环形带，其特征在于，
上述母材是聚酰胺-酰亚胺。
5.如权利要求1所述的环形带，其特征在于，
上述环形带的母材是聚酰胺-酰亚胺。
6.如权利要求3所述的环形带，其特征在于，
上述母材是聚酰亚胺。
7.如权利要求1所述的环形带，其特征在于，
上述环形带的母材是聚酰亚胺。
8.如权利要求3所述的环形带，其特征在于，
上述环形带含有纳米碳。
9.如权利要求1所述的环形带，其特征在于，
上述环形带含有纳米碳。
10.如权利要求3所述的环形带，其特征在于，
上述环形带采用离心成型制成。
11.如权利要求3所述的环形带，其特征在于，
上述环形带采用组合模制成。
12.一种图像形成装置，包含有权利要求1所述的环形带，该装置包括：
感光单元；
对上述感光单元的表面充电的充电单元；
对上述感光单元的充电表面照射以形成静电潜像的曝光单元；
利用色粉使上述静电潜像成为可视图像的显像单元；
将上述可视图像转印到上述环形带传输的记录介质的转印单元。
CN2005100874923A 2004-07-15 2005-07-15 环形带传输装置以及图像形成装置 Expired - Fee Related CN1722022B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP208396/04 2004-07-15
JP2004208396A JP2006030528A (ja) 2004-07-15 2004-07-15 無端状ベルト搬送体および画像形成装置

Publications (2)

Publication Number Publication Date
CN1722022A true CN1722022A (zh) 2006-01-18
CN1722022B CN1722022B (zh) 2011-03-16

Family

ID=35094642

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100874923A Expired - Fee Related CN1722022B (zh) 2004-07-15 2005-07-15 环形带传输装置以及图像形成装置

Country Status (5)

Country Link
US (1) US7356296B2 (zh)
EP (1) EP1617300B1 (zh)
JP (1) JP2006030528A (zh)
CN (1) CN1722022B (zh)
DE (1) DE602005011073D1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5095133B2 (ja) * 2006-06-06 2012-12-12 株式会社リコー 転写装置の製造方法
US7851111B2 (en) 2006-07-31 2010-12-14 Xerox Corporation Imaging belt with nanotube backing layer, and image forming devices including the same
US7738820B2 (en) * 2008-04-09 2010-06-15 Xerox Corporation HSD wires using fibrous carbon nanomaterial yarns
US20090263166A1 (en) * 2008-04-18 2009-10-22 Kabushiki Kaisha Toshiba Image forming apparatus
JP5142037B2 (ja) * 2008-07-24 2013-02-13 株式会社リコー ベルト部材、転写装置及び画像形成装置
JP2012173607A (ja) * 2011-02-23 2012-09-10 Fuji Xerox Co Ltd 画像形成装置
JP5927523B2 (ja) 2011-11-29 2016-06-01 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよび薄膜トランジスタの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409578B2 (ja) 1996-05-08 2003-05-26 カシオ電子工業株式会社 転写搬送ベルトの抵抗特性安定化方法、転写搬送ベルトの生産方法、及び画像形成装置の生産方法
US5930573A (en) * 1997-10-06 1999-07-27 Ricoh Company, Ltd. Image forming apparatus and image transferring device thereof having conveying member with selected surface resistivity
US5922440A (en) * 1998-01-08 1999-07-13 Xerox Corporation Polyimide and doped metal oxide intermediate transfer components
JP2000187403A (ja) * 1998-12-21 2000-07-04 Nitto Denko Corp 半導電性ベルト
US6336026B1 (en) * 1999-08-17 2002-01-01 Xerox Corporation Stabilized fluorosilicone transfer members
JP4806845B2 (ja) * 2000-01-07 2011-11-02 富士ゼロックス株式会社 半導電性ベルト、半導電性ロール、および画像形成装置
JP2003076155A (ja) * 2001-09-04 2003-03-14 Canon Inc 画像形成装置、中間転写ユニット及び記録材搬送ユニット
JP2003255640A (ja) * 2002-02-27 2003-09-10 Fuji Xerox Co Ltd ポリイミド樹脂無端ベルト、及びその製造方法
DE10246333B4 (de) * 2002-10-04 2008-06-19 Neoperl Gmbh Strahlregler
EP1650609B1 (en) * 2003-07-25 2013-09-18 Mitsubishi Chemical Corporation Endless belt for image forming devices and image forming device

Also Published As

Publication number Publication date
EP1617300B1 (en) 2008-11-19
JP2006030528A (ja) 2006-02-02
EP1617300A2 (en) 2006-01-18
CN1722022B (zh) 2011-03-16
EP1617300A3 (en) 2006-07-19
US7356296B2 (en) 2008-04-08
US20060210323A9 (en) 2006-09-21
US20050249525A1 (en) 2005-11-10
DE602005011073D1 (de) 2009-01-02

Similar Documents

Publication Publication Date Title
CN1722022A (zh) 环形带传输装置以及图像形成装置
US8335460B2 (en) Resin film manufacturing method, transfer belt, transfer unit, and image forming apparatus
US20140044461A1 (en) Polyamic acid composition, polyimide endless belt and manufacturing method thereof, and image forming apparatus
US7645520B2 (en) Endless belt and production method thereof, intermediate transfer belt, and image forming apparatus
US8437674B2 (en) Heating member including resistive heating layer, and fusing apparatus and image forming apparatus including the heating member
EP2211241B1 (en) Intermediate transfer member containing nano-diamonds
US20200019093A1 (en) Intermediary transfer belt, manufacturing method of the intermediary transfer belt, and image forming apparatus
CN101055458A (zh) 成像装置
US20100055445A1 (en) Hydrophobic polyetherimide/polysiloxane copolymer intermediate transfer components
CN1804731A (zh) 图像形成装置及其打印介质输送导向机构
JP2022148457A (ja) 電子写真部材、電子写真プロセスカートリッジおよび電子写真画像形成装置
US8703290B2 (en) Hydrophobic carbon black intermediate transfer components
US11614700B2 (en) Intermediate transfer member and image forming apparatus
CN1186264A (zh) 图象记录装置
EP2211240B1 (en) Intermediate transfer components containing carbon black surface-treated with polypyrrole
CN1495570A (zh) 成像设备
JP4303405B2 (ja) 半導電性ベルトおよび電子写真記録装置
US8265516B2 (en) Belt unit, transfer unit and image forming apparatus
US8290412B2 (en) Endless belt, transfer unit, and image forming apparatus
JP2008299120A (ja) 帯電部材
JP2008009287A (ja) 画像形成装置
JP7379071B2 (ja) 電子写真用ベルトおよび画像形成装置
CN1837983A (zh) 彩色成像装置
JP3799847B2 (ja) 中間転写体及びそれを用いる画像形成装置
JP4877772B2 (ja) 無端ベルトおよび画像形成装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110316

Termination date: 20200715