CN1713468B - 用于晶片级光电封装的封盖及其制造方法 - Google Patents

用于晶片级光电封装的封盖及其制造方法 Download PDF

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Publication number
CN1713468B
CN1713468B CN2005100598904A CN200510059890A CN1713468B CN 1713468 B CN1713468 B CN 1713468B CN 2005100598904 A CN2005100598904 A CN 2005100598904A CN 200510059890 A CN200510059890 A CN 200510059890A CN 1713468 B CN1713468 B CN 1713468B
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CN
China
Prior art keywords
layer
forming
cavity
barrier layer
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100598904A
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English (en)
Chinese (zh)
Other versions
CN1713468A (zh
Inventor
肯德拉·J·盖洛普
詹姆斯·A·马修斯
马莎·约翰逊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies Fiber IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies Fiber IP Singapore Pte Ltd filed Critical Avago Technologies Fiber IP Singapore Pte Ltd
Publication of CN1713468A publication Critical patent/CN1713468A/zh
Application granted granted Critical
Publication of CN1713468B publication Critical patent/CN1713468B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/4277—Protection against electromagnetic interference [EMI], e.g. shielding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Micromachines (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Elements Other Than Lenses (AREA)
CN2005100598904A 2004-06-24 2005-04-01 用于晶片级光电封装的封盖及其制造方法 Expired - Fee Related CN1713468B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/877,615 2004-06-24
US10/877,615 US7045827B2 (en) 2004-06-24 2004-06-24 Lids for wafer-scale optoelectronic packages

Publications (2)

Publication Number Publication Date
CN1713468A CN1713468A (zh) 2005-12-28
CN1713468B true CN1713468B (zh) 2011-10-05

Family

ID=35504672

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100598904A Expired - Fee Related CN1713468B (zh) 2004-06-24 2005-04-01 用于晶片级光电封装的封盖及其制造方法

Country Status (4)

Country Link
US (3) US7045827B2 (cg-RX-API-DMAC7.html)
JP (1) JP4869634B2 (cg-RX-API-DMAC7.html)
CN (1) CN1713468B (cg-RX-API-DMAC7.html)
DE (1) DE102005010926B4 (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750356B2 (en) * 2005-05-04 2010-07-06 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Silicon optical package with 45 degree turning mirror
CN100559559C (zh) * 2007-03-08 2009-11-11 探微科技股份有限公司 制作光学元件封盖的方法
JP2009032843A (ja) * 2007-07-26 2009-02-12 Nec Electronics Corp 半導体装置とその製造方法
US20100032702A1 (en) * 2008-08-11 2010-02-11 E. I. Du Pont De Nemours And Company Light-Emitting Diode Housing Comprising Fluoropolymer
CN101599522B (zh) * 2009-06-30 2011-05-25 厦门市三安光电科技有限公司 一种采用绝缘介质阻挡层的垂直发光二极管及其制备方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
US8315287B1 (en) 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
CN104094143B (zh) * 2011-12-22 2018-01-12 3M创新有限公司 具有传感器的光学装置及其制造和使用方法
DE102012217793A1 (de) 2012-09-28 2014-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren
JP2014158157A (ja) * 2013-02-15 2014-08-28 Asahi Kasei Electronics Co Ltd 圧電デバイス
NO2944700T3 (cg-RX-API-DMAC7.html) * 2013-07-11 2018-03-17
US9793237B2 (en) 2015-10-19 2017-10-17 Qorvo Us, Inc. Hollow-cavity flip-chip package with reinforced interconnects and process for making the same
US9799637B2 (en) * 2016-02-12 2017-10-24 Qorvo Us, Inc. Semiconductor package with lid having lid conductive structure
EP3385762A1 (en) 2017-04-03 2018-10-10 Indigo Diabetes N.V. Optical assembly with hermetically sealed cover cap
US10242967B2 (en) 2017-05-16 2019-03-26 Raytheon Company Die encapsulation in oxide bonded wafer stack
JP6970336B2 (ja) * 2017-08-04 2021-11-24 日亜化学工業株式会社 光源装置

Citations (3)

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US4791075A (en) * 1987-10-05 1988-12-13 Motorola, Inc. Process for making a hermetic low cost pin grid array package
US5577142A (en) * 1994-11-17 1996-11-19 Ant Nachrichtentechnik G.M.B.H. Optical fiber transmitting and receiving communications device
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder

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US3657029A (en) * 1968-12-31 1972-04-18 Texas Instruments Inc Platinum thin-film metallization method
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
US5336928A (en) * 1992-09-18 1994-08-09 General Electric Company Hermetically sealed packaged electronic system
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
EP0899781A3 (en) * 1997-08-28 2000-03-08 Lucent Technologies Inc. Corrosion protection in the fabrication of optoelectronic assemblies
JP2000019357A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 光アレイモジュール及び反射鏡アレイ
JP2000114655A (ja) * 1998-09-30 2000-04-21 Toshiba Corp サブマウントミラー方式面型レーザ
DE19845484C2 (de) * 1998-10-02 2002-09-26 Infineon Technologies Ag Mikrooptischer Baustein und Verfahren zu seiner Herstellung
US6818464B2 (en) * 2001-10-17 2004-11-16 Hymite A/S Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
TW560018B (en) * 2001-10-30 2003-11-01 Asia Pacific Microsystems Inc A wafer level packaged structure and method for manufacturing the same
WO2003068669A1 (en) * 2002-02-14 2003-08-21 Silex Microsystems Ab Deflectable microstructure and method of manufacturing the same through bonding of wafers
US6696645B2 (en) * 2002-05-08 2004-02-24 The Regents Of The University Of Michigan On-wafer packaging for RF-MEMS
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US4791075A (en) * 1987-10-05 1988-12-13 Motorola, Inc. Process for making a hermetic low cost pin grid array package
US5577142A (en) * 1994-11-17 1996-11-19 Ant Nachrichtentechnik G.M.B.H. Optical fiber transmitting and receiving communications device
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder

Also Published As

Publication number Publication date
DE102005010926B4 (de) 2008-05-08
US20050285131A1 (en) 2005-12-29
JP4869634B2 (ja) 2012-02-08
CN1713468A (zh) 2005-12-28
US20060121635A1 (en) 2006-06-08
JP2006013484A (ja) 2006-01-12
DE102005010926A1 (de) 2006-03-30
US20050285242A1 (en) 2005-12-29
US7534636B2 (en) 2009-05-19
US7045827B2 (en) 2006-05-16

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C06 Publication
PB01 Publication
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20061208

Address after: Singapore Singapore

Applicant after: Avago Technologies ECBU IP

Address before: Singapore Singapore

Applicant before: Avago Technologies General IP (Singapore) Pte. Ltd.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) CORPORAT

Free format text: FORMER OWNER: AVAGO TECHNOLOGIES ECBU IP

Effective date: 20130509

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130509

Address after: Singapore Singapore

Patentee after: Avago Technologies Fiber IP Singapore Pte. Ltd.

Address before: Singapore Singapore

Patentee before: Avago Tech Fiber IP Sg Pte Ltd.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111005

Termination date: 20140401