CN1691270A - 离子注入装置和方法 - Google Patents
离子注入装置和方法 Download PDFInfo
- Publication number
- CN1691270A CN1691270A CNA2005100663496A CN200510066349A CN1691270A CN 1691270 A CN1691270 A CN 1691270A CN A2005100663496 A CNA2005100663496 A CN A2005100663496A CN 200510066349 A CN200510066349 A CN 200510066349A CN 1691270 A CN1691270 A CN 1691270A
- Authority
- CN
- China
- Prior art keywords
- ions
- emission
- zone
- substrate
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000005468 ion implantation Methods 0.000 title claims abstract description 37
- 150000002500 ions Chemical class 0.000 claims abstract description 119
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 238000012937 correction Methods 0.000 claims abstract description 57
- 238000005516 engineering process Methods 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 28
- 239000007924 injection Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 13
- 230000001133 acceleration Effects 0.000 claims description 9
- 238000009472 formulation Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000047 product Substances 0.000 description 12
- 229940090044 injection Drugs 0.000 description 11
- 238000010884 ion-beam technique Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004744 fabric Substances 0.000 description 4
- 229920000554 ionomer Polymers 0.000 description 4
- 230000001915 proofreading effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012899 standard injection Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N7/00—Television systems
- H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30405—Details
- H01J2237/30411—Details using digital signal processors [DSP]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004128057A JP2005310634A (ja) | 2004-04-23 | 2004-04-23 | イオン注入装置およびイオン注入方法 |
JP128057/2004 | 2004-04-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1691270A true CN1691270A (zh) | 2005-11-02 |
CN100405526C CN100405526C (zh) | 2008-07-23 |
Family
ID=35187623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100663496A Expired - Fee Related CN100405526C (zh) | 2004-04-23 | 2005-04-22 | 离子注入装置和方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050244989A1 (zh) |
JP (1) | JP2005310634A (zh) |
KR (1) | KR100659645B1 (zh) |
CN (1) | CN100405526C (zh) |
TW (1) | TWI281692B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629543A (zh) * | 2011-02-02 | 2012-08-08 | 日新离子机器株式会社 | 离子注入方法和离子注入装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099857A (ja) | 2007-10-18 | 2009-05-07 | Toshiba Corp | 半導体装置の製造システムと製造方法 |
US20090227096A1 (en) * | 2008-03-07 | 2009-09-10 | Varian Semiconductor Equipment Associates, Inc. | Method Of Forming A Retrograde Material Profile Using Ion Implantation |
US8669539B2 (en) * | 2010-03-29 | 2014-03-11 | Advanced Ion Beam Technology, Inc. | Implant method and implanter by using a variable aperture |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6055460A (en) * | 1997-08-06 | 2000-04-25 | Advanced Micro Devices, Inc. | Semiconductor process compensation utilizing non-uniform ion implantation methodology |
JP4363694B2 (ja) * | 1998-04-17 | 2009-11-11 | 株式会社東芝 | イオン注入装置および半導体装置の製造方法 |
JP3408762B2 (ja) * | 1998-12-03 | 2003-05-19 | シャープ株式会社 | Soi構造の半導体装置及びその製造方法 |
JP2002203806A (ja) * | 2000-10-31 | 2002-07-19 | Toshiba Corp | 半導体装置の製造方法、ステンシルマスク及びその製造方法 |
-
2004
- 2004-04-23 JP JP2004128057A patent/JP2005310634A/ja active Pending
-
2005
- 2005-04-11 TW TW094111407A patent/TWI281692B/zh not_active IP Right Cessation
- 2005-04-21 KR KR1020050033017A patent/KR100659645B1/ko active IP Right Grant
- 2005-04-21 US US11/110,814 patent/US20050244989A1/en not_active Abandoned
- 2005-04-22 CN CNB2005100663496A patent/CN100405526C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629543A (zh) * | 2011-02-02 | 2012-08-08 | 日新离子机器株式会社 | 离子注入方法和离子注入装置 |
CN102629543B (zh) * | 2011-02-02 | 2014-10-22 | 日新离子机器株式会社 | 离子注入方法和离子注入装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2005310634A (ja) | 2005-11-04 |
KR100659645B1 (ko) | 2006-12-21 |
TWI281692B (en) | 2007-05-21 |
TW200601400A (en) | 2006-01-01 |
KR20060047311A (ko) | 2006-05-18 |
US20050244989A1 (en) | 2005-11-03 |
CN100405526C (zh) | 2008-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: CO., LTD. AIFERC Free format text: FORMER OWNER: TOSHIBA CORPORATION; APPLICANT Effective date: 20080314 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20080314 Address after: Kanagawa Applicant after: Ulvac Inc. Address before: Tokyo, Japan Applicant before: Toshiba Co-applicant before: Ulvac Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080723 Termination date: 20210422 |