CN1680792A - 光子混合器件 - Google Patents

光子混合器件 Download PDF

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Publication number
CN1680792A
CN1680792A CNA2005100648903A CN200510064890A CN1680792A CN 1680792 A CN1680792 A CN 1680792A CN A2005100648903 A CNA2005100648903 A CN A2005100648903A CN 200510064890 A CN200510064890 A CN 200510064890A CN 1680792 A CN1680792 A CN 1680792A
Authority
CN
China
Prior art keywords
mixer device
photonic mixer
electrode
read
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005100648903A
Other languages
English (en)
Chinese (zh)
Inventor
许展平
T·莫勒
H·科拉夫特
J·弗雷
M·阿尔布雷克特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PMDtechnologies AG
Original Assignee
PMDtechnologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PMDtechnologies AG filed Critical PMDtechnologies AG
Publication of CN1680792A publication Critical patent/CN1680792A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J2009/006—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength using pulses for physical measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Processing Of Solid Wastes (AREA)
CNA2005100648903A 2004-04-05 2005-04-05 光子混合器件 Pending CN1680792A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004016624A DE102004016624A1 (de) 2004-04-05 2004-04-05 Photomischdetektor
DE102004016624.2 2004-04-05

Publications (1)

Publication Number Publication Date
CN1680792A true CN1680792A (zh) 2005-10-12

Family

ID=34895472

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100648903A Pending CN1680792A (zh) 2004-04-05 2005-04-05 光子混合器件

Country Status (6)

Country Link
US (1) US7361883B2 (enExample)
EP (1) EP1584904B1 (enExample)
JP (1) JP4786924B2 (enExample)
CN (1) CN1680792A (enExample)
AT (1) ATE396388T1 (enExample)
DE (2) DE102004016624A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7420148B2 (en) * 2002-09-13 2008-09-02 Conti Temic Microelectronic Gmbh Method and device for determining a pixel gray scale value image
DE102004044581B4 (de) * 2004-09-13 2014-12-18 Pmdtechnologies Gmbh Verfahren und Vorrichtung zur Laufzeitsensitiven Messung eines Signals
KR101623960B1 (ko) * 2009-06-04 2016-05-25 삼성전자주식회사 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치
DE102012109548B4 (de) 2012-10-08 2024-06-27 pmdtechnologies ag Auslesegate
DE102013102061A1 (de) 2013-03-01 2014-09-04 Pmd Technologies Gmbh Subpixel
DE102013209161B4 (de) 2013-05-16 2025-03-13 pmdtechnologies ag Lichtlaufzeitsensor
DE102013109020B4 (de) 2013-08-21 2016-06-09 Pmdtechnologies Gmbh Streulichtreferenzpixel
DE102015108961A1 (de) 2015-06-08 2016-12-08 Pmdtechnologies Gmbh Bildsensor
US10191154B2 (en) 2016-02-11 2019-01-29 Massachusetts Institute Of Technology Methods and apparatus for time-of-flight imaging
US10337993B2 (en) 2016-04-15 2019-07-02 Massachusetts Institute Of Technology Methods and apparatus for fluorescence lifetime imaging with periodically modulated light
CN109216500B (zh) * 2017-06-26 2021-08-17 苏州科技大学 太赫兹波探测器用衬底及其制备方法
US10310085B2 (en) 2017-07-07 2019-06-04 Mezmeriz Inc. Photonic integrated distance measuring pixel and method of distance measurement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19704496C2 (de) * 1996-09-05 2001-02-15 Rudolf Schwarte Verfahren und Vorrichtung zur Bestimmung der Phasen- und/oder Amplitudeninformation einer elektromagnetischen Welle
AU715284B2 (en) * 1996-09-05 2000-01-20 Rudolf Schwarte Method and apparatus for determining the phase and/or amplitude information of an electromagnetic wave
DE19821974B4 (de) * 1998-05-18 2008-04-10 Schwarte, Rudolf, Prof. Dr.-Ing. Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen
US7071482B2 (en) * 1999-03-24 2006-07-04 Fuji Photo Film Co., Ltd. Image read-out method and system, solid image sensor, and image detecting sheet
ITMI20010443A1 (it) * 2001-03-02 2002-09-02 Marconi Comm Spa Metodo e apparati per la rilevazione e compensazione di parametri della pmd in segnali trasmessi lungo collegamenti a fibre ottiche e sistem
GB2389960A (en) * 2002-06-20 2003-12-24 Suisse Electronique Microtech Four-tap demodulation pixel
DE10230225B4 (de) * 2002-07-04 2006-05-11 Zentrum Mikroelektronik Dresden Ag Photomischdetektor und Verfahren zu seinem Betrieb und zu seiner Herstellung
DE10393761D2 (de) * 2002-09-13 2005-07-28 Conti Temic Microelectronic Verfahren und Vorrichtung zur Ermittlung eines Pixel-Grauwertbildes

Also Published As

Publication number Publication date
JP2006023276A (ja) 2006-01-26
ATE396388T1 (de) 2008-06-15
US7361883B2 (en) 2008-04-22
EP1584904A3 (de) 2007-05-30
DE502005004162D1 (de) 2008-07-03
JP4786924B2 (ja) 2011-10-05
US20050237811A1 (en) 2005-10-27
EP1584904B1 (de) 2008-05-21
DE102004016624A1 (de) 2005-10-13
EP1584904A2 (de) 2005-10-12

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PB01 Publication
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SE01 Entry into force of request for substantive examination
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RJ01 Rejection of invention patent application after publication

Application publication date: 20051012