CN1675126A - 用于mems应用的低温等离子体硅或硅锗 - Google Patents

用于mems应用的低温等离子体硅或硅锗 Download PDF

Info

Publication number
CN1675126A
CN1675126A CNA038185636A CN03818563A CN1675126A CN 1675126 A CN1675126 A CN 1675126A CN A038185636 A CNA038185636 A CN A038185636A CN 03818563 A CN03818563 A CN 03818563A CN 1675126 A CN1675126 A CN 1675126A
Authority
CN
China
Prior art keywords
silicon
temperature
mems
layer
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038185636A
Other languages
English (en)
Chinese (zh)
Inventor
朱尔根·A.·弗斯特纳
斯蒂文·M.·史密斯
雷蒙德·M.·鲁普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1675126A publication Critical patent/CN1675126A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Chemical Vapour Deposition (AREA)
CNA038185636A 2002-08-01 2003-05-13 用于mems应用的低温等离子体硅或硅锗 Pending CN1675126A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/210,315 2002-08-01
US10/210,315 US6770569B2 (en) 2002-08-01 2002-08-01 Low temperature plasma Si or SiGe for MEMS applications

Publications (1)

Publication Number Publication Date
CN1675126A true CN1675126A (zh) 2005-09-28

Family

ID=31187279

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038185636A Pending CN1675126A (zh) 2002-08-01 2003-05-13 用于mems应用的低温等离子体硅或硅锗

Country Status (6)

Country Link
US (1) US6770569B2 (https=)
JP (1) JP2005534510A (https=)
KR (1) KR20050026078A (https=)
CN (1) CN1675126A (https=)
AU (1) AU2003229041A1 (https=)
WO (1) WO2004013039A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101393321B (zh) * 2008-10-09 2010-06-02 重庆大学 光栅光调制器与有源矩阵驱动电路单片集成方法
CN102336388A (zh) * 2010-07-22 2012-02-01 上海华虹Nec电子有限公司 压敏传感器的制备方法
CN102515089A (zh) * 2011-12-21 2012-06-27 北京大学 一种mems集成化方法
WO2016110135A1 (zh) * 2015-01-08 2016-07-14 上海新微技术研发中心有限公司 一种褶皱膜温度传感器及其制作方法
CN108584864A (zh) * 2018-04-16 2018-09-28 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
CN110504435A (zh) * 2019-08-30 2019-11-26 石家庄尚太科技有限公司 一种低温等离子体制备硅碳复合负极材料的方法

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US7071017B2 (en) * 2003-08-01 2006-07-04 Yamaha Corporation Micro structure with interlock configuration
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
US7288464B2 (en) * 2005-04-11 2007-10-30 Hewlett-Packard Development Company, L.P. MEMS packaging structure and methods
US20060234412A1 (en) * 2005-04-19 2006-10-19 Hewlett-Packard Development Company, L.P. Intellectual Property Administration MEMS release methods
US7678601B2 (en) * 2006-01-20 2010-03-16 Texas Instruments Incorporated Method of forming an acceleration sensor
US7642114B2 (en) * 2006-07-19 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical device and manufacturing method thereof
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
JP4561813B2 (ja) 2007-11-09 2010-10-13 セイコーエプソン株式会社 アクティブマトリクス装置、電気光学表示装置、および電子機器
KR100959454B1 (ko) * 2007-12-10 2010-05-25 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
US8071411B2 (en) * 2007-12-21 2011-12-06 The Royal Institution For The Advancement Of Learning/Mcgill University Low temperature ceramic microelectromechanical structures
US8409901B2 (en) * 2008-03-11 2013-04-02 The Royal Institution For The Advancement Of Learning/Mcgill University Low temperature wafer level processing for MEMS devices
WO2010003228A1 (en) * 2008-07-09 2010-01-14 The Royal Institution For The Advancement Of Learning/Mcgiii University Low temperature ceramic microelectromechanical structures
FR2953819A1 (fr) * 2009-12-15 2011-06-17 Commissariat Energie Atomique Procede de fabrication d'un composant electronique associant un systeme electromecanique et un circuit electronique.
US8567246B2 (en) 2010-10-12 2013-10-29 Invensense, Inc. Integrated MEMS device and method of use
US9664750B2 (en) 2011-01-11 2017-05-30 Invensense, Inc. In-plane sensing Lorentz force magnetometer
US8947081B2 (en) 2011-01-11 2015-02-03 Invensense, Inc. Micromachined resonant magnetic field sensors
US8860409B2 (en) 2011-01-11 2014-10-14 Invensense, Inc. Micromachined resonant magnetic field sensors
US8686555B2 (en) * 2011-06-29 2014-04-01 Invensense, Inc. Integrated heater on MEMS cap for wafer scale packaged MEMS sensors
WO2013046283A1 (ja) * 2011-09-30 2013-04-04 富士通株式会社 可動部を有する電気機器とその製造方法
JP5751206B2 (ja) 2011-10-21 2015-07-22 株式会社豊田中央研究所 光偏向装置
WO2013076755A1 (ja) * 2011-11-22 2013-05-30 パイオニア株式会社 静電アクチュエーター、可変容量コンデンサーおよび電気スイッチ
CN102616731B (zh) * 2012-03-27 2016-02-03 上海华虹宏力半导体制造有限公司 Mems器件的制造方法
KR101471190B1 (ko) * 2012-12-31 2014-12-11 한국과학기술원 멤즈 구조체의 제조 방법
WO2016130722A1 (en) 2015-02-11 2016-08-18 Invensense, Inc. 3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT
US10192850B1 (en) 2016-09-19 2019-01-29 Sitime Corporation Bonding process with inhibited oxide formation
US11314210B2 (en) * 2018-08-01 2022-04-26 Nutech Ventures Neuromorphic computing using electrostatic mems devices
CN110713169B (zh) * 2019-10-21 2023-02-14 中北大学 一种提高射频mems开关中聚酰亚胺牺牲层平整度的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552994A (en) 1992-09-23 1996-09-03 Onkor, Ltd. System for printing social expression cards in response to electronically transmitted orders
EP0683921B1 (en) 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US5616514A (en) 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
JP4245660B2 (ja) 1994-11-22 2009-03-25 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファウ 片持ち梁式の微細構造あるいは膜を有するマイクロメカニック部品を作製する方法
US5578976A (en) 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
FR2736654B1 (fr) * 1995-07-13 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements
AU3346000A (en) * 1999-01-15 2000-08-01 Regents Of The University Of California, The Polycrystalline silicon germanium films for forming micro-electromechanical systems
US6069540A (en) 1999-04-23 2000-05-30 Trw Inc. Micro-electro system (MEMS) switch
DE60139610D1 (de) * 2000-04-05 2009-10-01 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
US6635506B2 (en) * 2001-11-07 2003-10-21 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US6701779B2 (en) * 2002-03-21 2004-03-09 International Business Machines Corporation Perpendicular torsion micro-electromechanical switch

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101393321B (zh) * 2008-10-09 2010-06-02 重庆大学 光栅光调制器与有源矩阵驱动电路单片集成方法
CN102336388A (zh) * 2010-07-22 2012-02-01 上海华虹Nec电子有限公司 压敏传感器的制备方法
CN102336388B (zh) * 2010-07-22 2014-04-16 上海华虹宏力半导体制造有限公司 压敏传感器的制备方法
CN102515089A (zh) * 2011-12-21 2012-06-27 北京大学 一种mems集成化方法
CN102515089B (zh) * 2011-12-21 2014-10-15 北京大学 一种mems集成化方法
WO2016110135A1 (zh) * 2015-01-08 2016-07-14 上海新微技术研发中心有限公司 一种褶皱膜温度传感器及其制作方法
CN108584864A (zh) * 2018-04-16 2018-09-28 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
CN108584864B (zh) * 2018-04-16 2019-08-09 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
CN110504435A (zh) * 2019-08-30 2019-11-26 石家庄尚太科技有限公司 一种低温等离子体制备硅碳复合负极材料的方法

Also Published As

Publication number Publication date
WO2004013039A3 (en) 2004-12-16
AU2003229041A1 (en) 2004-02-23
JP2005534510A (ja) 2005-11-17
US6770569B2 (en) 2004-08-03
US20040023429A1 (en) 2004-02-05
KR20050026078A (ko) 2005-03-14
WO2004013039A2 (en) 2004-02-12

Similar Documents

Publication Publication Date Title
CN1675126A (zh) 用于mems应用的低温等离子体硅或硅锗
US8338205B2 (en) Method of fabricating and encapsulating MEMS devices
CN106829846B (zh) 半导体器件及其制造方法
US8287956B2 (en) Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics
CN108893726B (zh) Pecvd微晶硅锗(sige)
TWI499314B (zh) 微電子機械系統傳聲器及其製造方法
CN1538934A (zh) 制造悬浮多孔硅微结构的方法及其在气体传感器中的应用
US20060196843A1 (en) Process for fabricating monolithic membrane substrate structures with well-controlled air gaps
CN102556936A (zh) 用于制造腔结构、制造用于半导体结构的腔结构的方法和使用该方法制造的半导体传声器
WO2011142850A2 (en) Etchant-free methods of producing a gap between two layers, and devices produced thereby
EP1173893A4 (en) POLYSILICIUM-GERMANIUM FILMS FOR PERFORMING MICRO-ELECTROMECHANICAL SYSTEMS
JP2009510750A (ja) シリコンを促進エッチングする方法
JP2009538238A (ja) マイクロマシン構成素子及びその製法
US8071411B2 (en) Low temperature ceramic microelectromechanical structures
KR100537093B1 (ko) Ｍｅｍｓ 구조물을 이용한 탄소나노튜브 가스센서 및 그제작방법
KR20090093081A (ko) 정렬된 나노와이어의 제조방법 및 나노와이어 응용소자
US20130182366A1 (en) Mems device and method of manufacturing the same
TW200534580A (en) Electro-mechanical device and method of producing the same
US11404263B2 (en) Deposition of low-stress carbon-containing layers
JP3950628B2 (ja) 広範囲メンブランマスクを製造する方法
US10784147B2 (en) Method for producing a buried cavity structure
US20090275203A1 (en) Method for processing a thin film micro device on a substrate
JP2007274096A (ja) ダイヤフラム及びその製造方法
Campedelli et al. Thin Film Deposition
Hung et al. Silicide-based release of high aspect-ratio microstructures

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication