KR20050026078A - 멤스(ｍｅｍｓ) 응용을 위한 저온 플라즈마 실리콘 또는실리콘게르마늄 - Google Patents
멤스(ｍｅｍｓ) 응용을 위한 저온 플라즈마 실리콘 또는실리콘게르마늄 Download PDFInfo
- Publication number
- KR20050026078A KR20050026078A KR1020057001759A KR20057001759A KR20050026078A KR 20050026078 A KR20050026078 A KR 20050026078A KR 1020057001759 A KR1020057001759 A KR 1020057001759A KR 20057001759 A KR20057001759 A KR 20057001759A KR 20050026078 A KR20050026078 A KR 20050026078A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- layer
- mems
- temperature lower
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 30
- 238000000151 deposition Methods 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 11
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 239000010931 gold Substances 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 22
- 238000012805 post-processing Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000002243 precursor Substances 0.000 description 12
- 229910000927 Ge alloy Inorganic materials 0.000 description 10
- 229910000676 Si alloy Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- -1 gold Chemical class 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/210,315 | 2002-08-01 | ||
| US10/210,315 US6770569B2 (en) | 2002-08-01 | 2002-08-01 | Low temperature plasma Si or SiGe for MEMS applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050026078A true KR20050026078A (ko) | 2005-03-14 |
Family
ID=31187279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057001759A Withdrawn KR20050026078A (ko) | 2002-08-01 | 2003-05-13 | 멤스(ｍｅｍｓ) 응용을 위한 저온 플라즈마 실리콘 또는실리콘게르마늄 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6770569B2 (https=) |
| JP (1) | JP2005534510A (https=) |
| KR (1) | KR20050026078A (https=) |
| CN (1) | CN1675126A (https=) |
| AU (1) | AU2003229041A1 (https=) |
| WO (1) | WO2004013039A2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100959454B1 (ko) * | 2007-12-10 | 2010-05-25 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
| KR101471190B1 (ko) * | 2012-12-31 | 2014-12-11 | 한국과학기술원 | 멤즈 구조체의 제조 방법 |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0867701A1 (en) * | 1997-03-28 | 1998-09-30 | Interuniversitair Microelektronica Centrum Vzw | Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer |
| US7071017B2 (en) * | 2003-08-01 | 2006-07-04 | Yamaha Corporation | Micro structure with interlock configuration |
| US7442570B2 (en) | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
| US7288464B2 (en) * | 2005-04-11 | 2007-10-30 | Hewlett-Packard Development Company, L.P. | MEMS packaging structure and methods |
| US20060234412A1 (en) * | 2005-04-19 | 2006-10-19 | Hewlett-Packard Development Company, L.P. Intellectual Property Administration | MEMS release methods |
| US7678601B2 (en) * | 2006-01-20 | 2010-03-16 | Texas Instruments Incorporated | Method of forming an acceleration sensor |
| US7642114B2 (en) * | 2006-07-19 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical device and manufacturing method thereof |
| DE102006061386B3 (de) * | 2006-12-23 | 2008-06-19 | Atmel Germany Gmbh | Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung |
| JP4561813B2 (ja) | 2007-11-09 | 2010-10-13 | セイコーエプソン株式会社 | アクティブマトリクス装置、電気光学表示装置、および電子機器 |
| US8071411B2 (en) * | 2007-12-21 | 2011-12-06 | The Royal Institution For The Advancement Of Learning/Mcgill University | Low temperature ceramic microelectromechanical structures |
| US8409901B2 (en) * | 2008-03-11 | 2013-04-02 | The Royal Institution For The Advancement Of Learning/Mcgill University | Low temperature wafer level processing for MEMS devices |
| WO2010003228A1 (en) * | 2008-07-09 | 2010-01-14 | The Royal Institution For The Advancement Of Learning/Mcgiii University | Low temperature ceramic microelectromechanical structures |
| CN101393321B (zh) * | 2008-10-09 | 2010-06-02 | 重庆大学 | 光栅光调制器与有源矩阵驱动电路单片集成方法 |
| FR2953819A1 (fr) * | 2009-12-15 | 2011-06-17 | Commissariat Energie Atomique | Procede de fabrication d'un composant electronique associant un systeme electromecanique et un circuit electronique. |
| CN102336388B (zh) * | 2010-07-22 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 压敏传感器的制备方法 |
| US8567246B2 (en) | 2010-10-12 | 2013-10-29 | Invensense, Inc. | Integrated MEMS device and method of use |
| US9664750B2 (en) | 2011-01-11 | 2017-05-30 | Invensense, Inc. | In-plane sensing Lorentz force magnetometer |
| US8947081B2 (en) | 2011-01-11 | 2015-02-03 | Invensense, Inc. | Micromachined resonant magnetic field sensors |
| US8860409B2 (en) | 2011-01-11 | 2014-10-14 | Invensense, Inc. | Micromachined resonant magnetic field sensors |
| US8686555B2 (en) * | 2011-06-29 | 2014-04-01 | Invensense, Inc. | Integrated heater on MEMS cap for wafer scale packaged MEMS sensors |
| WO2013046283A1 (ja) * | 2011-09-30 | 2013-04-04 | 富士通株式会社 | 可動部を有する電気機器とその製造方法 |
| JP5751206B2 (ja) | 2011-10-21 | 2015-07-22 | 株式会社豊田中央研究所 | 光偏向装置 |
| WO2013076755A1 (ja) * | 2011-11-22 | 2013-05-30 | パイオニア株式会社 | 静電アクチュエーター、可変容量コンデンサーおよび電気スイッチ |
| CN102515089B (zh) * | 2011-12-21 | 2014-10-15 | 北京大学 | 一种mems集成化方法 |
| CN102616731B (zh) * | 2012-03-27 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | Mems器件的制造方法 |
| CN104501983B (zh) * | 2015-01-08 | 2017-03-22 | 上海新微技术研发中心有限公司 | 一种褶皱膜温度传感器及其制作方法 |
| WO2016130722A1 (en) | 2015-02-11 | 2016-08-18 | Invensense, Inc. | 3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT |
| US10192850B1 (en) | 2016-09-19 | 2019-01-29 | Sitime Corporation | Bonding process with inhibited oxide formation |
| CN108584864B (zh) * | 2018-04-16 | 2019-08-09 | 大连理工大学 | 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法 |
| US11314210B2 (en) * | 2018-08-01 | 2022-04-26 | Nutech Ventures | Neuromorphic computing using electrostatic mems devices |
| CN110504435B (zh) * | 2019-08-30 | 2021-06-04 | 石家庄尚太科技股份有限公司 | 一种低温等离子体制备硅碳复合负极材料的方法 |
| CN110713169B (zh) * | 2019-10-21 | 2023-02-14 | 中北大学 | 一种提高射频mems开关中聚酰亚胺牺牲层平整度的方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5552994A (en) | 1992-09-23 | 1996-09-03 | Onkor, Ltd. | System for printing social expression cards in response to electronically transmitted orders |
| EP0683921B1 (en) | 1993-02-04 | 2004-06-16 | Cornell Research Foundation, Inc. | Microstructures and single mask, single-crystal process for fabrication thereof |
| US5616514A (en) | 1993-06-03 | 1997-04-01 | Robert Bosch Gmbh | Method of fabricating a micromechanical sensor |
| JP4245660B2 (ja) | 1994-11-22 | 2009-03-25 | フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファウ | 片持ち梁式の微細構造あるいは膜を有するマイクロメカニック部品を作製する方法 |
| US5578976A (en) | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
| FR2736654B1 (fr) * | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
| AU3346000A (en) * | 1999-01-15 | 2000-08-01 | Regents Of The University Of California, The | Polycrystalline silicon germanium films for forming micro-electromechanical systems |
| US6069540A (en) | 1999-04-23 | 2000-05-30 | Trw Inc. | Micro-electro system (MEMS) switch |
| DE60139610D1 (de) * | 2000-04-05 | 2009-10-01 | Imec | Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige |
| US6635506B2 (en) * | 2001-11-07 | 2003-10-21 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
| US6701779B2 (en) * | 2002-03-21 | 2004-03-09 | International Business Machines Corporation | Perpendicular torsion micro-electromechanical switch |
-
2002
- 2002-08-01 US US10/210,315 patent/US6770569B2/en not_active Expired - Lifetime
-
2003
- 2003-05-13 WO PCT/US2003/014930 patent/WO2004013039A2/en not_active Ceased
- 2003-05-13 AU AU2003229041A patent/AU2003229041A1/en not_active Abandoned
- 2003-05-13 JP JP2004525975A patent/JP2005534510A/ja not_active Withdrawn
- 2003-05-13 KR KR1020057001759A patent/KR20050026078A/ko not_active Withdrawn
- 2003-05-13 CN CNA038185636A patent/CN1675126A/zh active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100959454B1 (ko) * | 2007-12-10 | 2010-05-25 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
| KR101471190B1 (ko) * | 2012-12-31 | 2014-12-11 | 한국과학기술원 | 멤즈 구조체의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004013039A3 (en) | 2004-12-16 |
| AU2003229041A1 (en) | 2004-02-23 |
| JP2005534510A (ja) | 2005-11-17 |
| US6770569B2 (en) | 2004-08-03 |
| US20040023429A1 (en) | 2004-02-05 |
| CN1675126A (zh) | 2005-09-28 |
| WO2004013039A2 (en) | 2004-02-12 |
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