CN1663118A - 用于无线功率传递的平面谐振器 - Google Patents
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Abstract
一种平面谐振器及其制造方法，使用耦合电感器或变压器结构中传递接口上感应校准的至少两个电隔离轴，提供非接触功率传递。接着，通过磁通量耦合实现信号或功率传递。在同一接口上也实现电通量耦合，并且该电通量耦合由同一导电螺旋卷绕导体驱动。能量传递接口(IOET)(215)具有设置在所述IOET顶面的第一螺旋形导体(210)；设置在所述IOET底面上的第二螺旋形导体(230)，该第二螺旋形导体具有与该第一螺旋形导体对齐的垂直轴。该IOET和该第一和第二螺旋形导体具有预定自谐振频率。该平面功率谐振器存储电能在IOET中，并且在预定频率下，该第一和第二螺旋形导体和IOET装置允许该第一和第二螺旋在IOET上进行磁通量和电能传递。该谐振器方便了诸如手机和可佩戴电子设备中的非接触电池充电，这时该谐振器可被织入织品内或附在人的衣服上。
Description
技术领域
本发明涉及非接触功率传递系统。更具体地说，本发明设计非接触功率传递系统中用于无线功率传递的平面谐振器。
背景技术
非接触功率传递用于如非侵入式起搏器电池充电，混和车辆电池充电的应用中。在这种应用中排他地使用感应耦合，使得电流从发电站向负载感应。在这种系统中，排他地依靠发电站和负载的耦合磁通量来实现功率传递。
例如，诸如California等州已经在研究鼓励使用电车的道路系统。在这种系统中，感应耦合扁平线圈被嵌入路面，或者对嵌入路面的电缆赋能，使得车辆的感应线圈接收来自路面线圈的感应电流，以便允许电池充电和/或甚至推动。典型地，这种系统要求埋地线圈的通量采集表面和车辆相互之间的距离保持在5厘米之内，以便通过感应提供充分的功率传递。
授予Steigerwald等人的美国专利5,608,771公开了一种非接触功率传递系统，其中通过使用旋转变压器从固定源向旋转负载传递功率。该系统取消了电刷和集电环装置。这种类型系统中的耦合也是感应的。
另一种配置是在主导体周围使用夹紧连接，该连接并不与该导体物理接触。该功率传递还是通过感应。
在安全识别的单独领域中，有个人和车辆识别标签(如EZ-Pass，Smart-Tag和从Boston到Virginia的隧道中某些桥梁和部分Interstate 95上的快速通道自动收费系统)，该识别标签不提供功率传递，但是以无线通信形式使用。与功率传递系统的感应耦合相反，这些安全标签和收费标签是容性耦合收发器。因此，现有技术缺少一种除了磁通量的感应耦合外还包括电通量的容性耦合功能的非接触功率传递系统。
发明内容
提供一种允许在无磁性的，不导电的直流绝缘体(材料)上进行功率传递的无线功率传递平面谐振器是非常有利的。电能和/或磁能存储在该绝缘体上，并通过该绝缘体传递能量。谐振元件展示出集成电感电容变压器的特性。
本发明的第一方面，平面谐振器包括单螺旋结构排列的线圈。可是，当用于多螺旋结构中，螺旋之间的电容可用来能量传递，导致了IOET上电能和磁能转移的结合。另一方面，该螺旋可以相互对面排列，这样就不需要底板。例如，连接可以是无线的，这样不需要连接手机和充电器的物理导线就可以充电手机电池。对于无线能量传递来说，PCB典型地为一种不合适的IOET。
根据使用的物理配置和/或材料，该平面谐振器同时存储电能和磁能，以便阻抗匹配或者在能量传递接口(以下为“IOET”)上以电形式或磁形式或者以电形式和磁形式传递功率之外，还完成附属切换功率电子变换器电路中的软切换。使用的物理配置和/或材料除了感应能量存储，电(电容)能量存储或者其组合如以内置LC谐振特性耦合的磁变压器之外，在有无容性能量传递的情况下都可允许变压器行为。该平面谐振器不需使用用于能量传递的IOET，例如，在单螺旋结构中。
根据本发明的另一方面，绝缘耦合接口和谐振箱功能性地集成到具有功率转移的隔离特性的平面结构中。该设备可包含IOET任一面上的两个单独的结构，例如，手机及其充电器。由于在IOET上不需要电接触，因此可以根据安全标准如IEC950的绝缘规范减小整个充电电路的尺寸。该物理结构可包括IOET每一面上的一套螺旋线圈，典型地具有一个作为单独基底上的导体线路的螺旋，如电线或印刷线路板(FR-4)。
本发明的一个优点在于它方便了可佩戴电子设备的使用。例如，可以使用如FR4材料和电线电路，致使线圈表面灵活。除了灵活性之外，该线圈可以形成任意形状，从而推动了设置在织品中的编织电线，或者可以附在衣服上具有嵌入导体的垫子。这样，例如，人们通过携带与织品相近的设备，就可以充电收音机，手机，和/或计算机(仅列举了许多可佩戴设备中的几种)。因此，本发明在可佩戴电子设备上的实施可以在可佩戴设备和外部电源之间提供一个接口。也可通过这种接口传送数字或模拟信号，以便例如上传或下载数字信号。
本发明的另一方面，平面功率谐振器可具有薄的和/或相对扁平的顶端线圈表面。在无线应用中，IOET可包含，例如(i)顶端螺旋底部的不导电/绝缘薄膜(用于隔离)，(ii)空气和(iii)底部螺旋顶端的不导电/绝缘薄膜(用于隔离)。该线圈可以设置在基本轴向排列的上部和下部结构中。另外，在上部线圈的底部可以有乳化剂，并且在乳化剂和下部线圈的顶部之间有空气间隙。
该螺旋形导体可包含pcb螺旋卷绕导体。另外，电池充电电路可与第一和第二螺旋形导体中的一个耦合，而负载可与第一和第二螺旋形导体中的另一个耦合。该电池充电电路的耦合可包含容性耦合。负载可通过磁性耦合进行耦合，其中功率通过IOET上的磁通量耦合进行传递。
根据本发明的一个方面，通过IOET上第一和第二螺旋形导体的磁通量耦合，施加到第一螺旋形导体上的信号可以被传递到第二螺旋形导体上。
第一和第二螺旋形导体和IOET优选地被集成到平面(扁平/薄的)结构中。
该平面谐振器可进一步包含第三螺旋形导体，在该IOET的顶面上该第三螺旋形导体与第一螺旋形导体一起被设计成双线螺旋结构，和/或第四螺旋形导体，在该IOET的底面上该第四螺旋形导体与第二螺旋形导体一起被设计成双线螺旋结构。应当理解，双线顶部和单底部，或者单底部和双线底部都是可选配置。通过在这两个螺旋之间去掉和加上导电连接，可以分别实现等效串联或并联谐振器工作。
因此，该IOET顶面和底面上的双线螺旋结构可以被用来形成并联谐振器，或串联谐振器。
另外，代替双线结构的是，多个螺旋形导体还可以分别在顶面或者在底面布置成多线结构。该螺旋形导体可以被设计成使得该平面谐振器包含并联谐振器，或者串联谐振器。
第一多个和第二多个螺旋形导体可被设计成该平面谐振器包含并联谐振器，或串联谐振器。可以有具有一个电容板的配置。该线圈一端连接点该电容器的绝缘体，另一端连接点充电电路。在该配置中，该平面谐振器作为电感和电容串联，影响该电路的Q。
双线配置也可由分离两个螺旋的绝缘材料第二薄膜获得，该两个螺旋在IOET的一个面上形成双线配置。(即，该绝缘薄膜是在顶部螺旋的顶部；另一螺旋位于该绝缘薄膜的顶部。)该绝缘薄膜存储电能并形成该谐振器的容性部分，其中感性部分从该套螺旋在该绝缘薄膜任一面的自耦合中获得。该薄膜不传递能量，但是存储能量，该能量可以在IOET上传递。
代替螺旋同向卷绕双线配置的是该螺旋中的一个可以具有相反的卷绕方向。因此，在这种情况下两个螺旋不在同一物理平面上。当需要或者希望拥有柔性电路，或者当希望拥有几个线圈层以增加谐振器的磁容量和电容量时，可以利用其优势。所有上述配置都拥有传输线特性和多个谐振频率。通过等效电阻，电容，电感和耦合电感的分布网可进一步模拟电行为。通过对接口和螺旋的几何结构和材料特性的选择，可以控制分布元件的数值，从而控制其端点结构的电行为，包括谐振频率，阻抗，增益和相位。
附图说明
图1A和1B示出了本发明中所使用的一种基本螺旋，和一种双线螺旋配置。
图2A和2B示出了根据本发明的平面谐振器的一种实施例，以及螺旋和IOET的横截面切片。
图2C示出了一种可选配置，其中绝缘体和螺旋被安排在基底材料240，241中。
图3是一种卷绕在IOET周围的螺旋的横截面示意图。
图4示出了图1A中示出的螺旋配置的近似等效电路。
图5示出了图1B中示出的螺旋配置的近似等效电路。
图6和7示出了螺旋的示意配置，该螺旋被设计成使得本发明作为串联谐振器和并联谐振器。
图8A和8B分别表示串联结构的示意图，阻抗与频率的关系图。
典型的阻抗曲线是在第一谐振频率周围绘制的，L和C分别表示主要是感性行为或者容性行为。
图8C，8D和8E表示并联结构的示意图，阻抗与频率的关系图，以及在两个螺旋线圈之间用于能量存储的电容草图。
图8F和8G示出了两中不同配置，其中通过电耦合，能量可以进入和退出该结构。
图9A到9C分别示出了根据本发明的平面谐振器的横截面，两个线圈的顶视图，以及降阶等效电路。
图10示出了等效顶部和底部并联谐振器电路，说明了IOET是如何在该谐振器上工作，以混和的电能和磁能的形式传递电能。
图11是根据本发明的一种串联谐振电池充电器的等效电路示意图。
图12是根据该即时发明的反馈变压器的示意图
具体实施方式
以下描述仅为说明，并不作为限制。还有许多不同结构也在本发明的宗旨和所附权利要求的范围中。
图1A-1B示出了根据本发明的一个方面的拼命集成谐振器的变化。集成谐振器是通过在结构(几何学)时间能量函数的一部分中存储电能获得，在同一函数的一部分中也存储磁能。
图1A示出了基本螺旋100的例子，而图1B示出了双线螺旋200。当然，本领域的普通技术人员应当理解本发明不限于螺旋和双线螺旋，根据需要可以使用任意数量的螺旋卷绕(多线)。如图2所示，平面200具有在能量传递接口(IOET)215的顶面上卷绕的螺旋210，以及在能量传递接口(IOET)的底面220上卷绕的另一螺旋(未示出)。在IOET的顶面上的螺旋的轴，内径和外径与IOET底面上的螺旋近似对应。
图2B示出了图2A中示出的螺旋210的横截面。从该横截面可以看出该螺旋具有被IOET分开的导体225，230。设定具有磁耦合系数(即共享相同磁通量)的螺旋间的IOET层允许该集成谐振器存储电能，这是存储磁能的结构时间能量函数的一部分。
应当注意，当图2B示出具有上下布置的螺旋导体的IOET时，该IOET不必要是基底，如图2C所示，IOET被安排在基底240和241之间。该两个基底材料是接口235的任意一面，假如235为空气间隙的话，则它们沿着该接口235分开。
该IOET可具有μr＞1，或者Er＞1，其中μr是该材料的相对渗透性，Er是该材料的相对介电常数。
图3示出了可以使用多个并联螺旋或者多线螺旋的实施例。如图3A所示，“w”等于宽度而“t”等于厚度。螺旋圈数及其尺寸，以及连接和旋转方向可被设计成取得串联，并联，或者串联/并联混和电路。
图4，5，6和7示出了螺旋配置及其等效电路，其中使用符号如A和B来区分各个螺旋。例如，图4为图1A的近似等效电路，作为第一近似值该电路可进一步简化成等效集总电容和等效集总电感。
应当注意，例如，更复杂的等效电路模型可包括变压器，通过将其看作传输线网络，这一模型的复杂性可扩展到包括高阶影响。
关于图6和7，该图分别示出了串联谐振器和并联谐振器。应当注意，在图6中可能的应用是低通过滤器和并联负载谐振半桥。
关于图8A和8B，在第一谐振频率周围绘制了典型的阻抗曲线，而L和C分别表示主要为感性或者容性行为。
在本发明该部分中的串联平面谐振器的工作如下：当工作频率完全低于该结构的自谐振频率，则在每一套螺旋之间存在大量电容，从电能的观点来看，该串联谐振器可被认为行为如电容器的单端口网络。
如图8B所示，谐振频率w处阻抗最小。在更高频率处，电容分配在具有电感特性的螺旋绕组上和螺旋绕组之间，从而作为行为更像传输线的两端口网络。最简单的等效集总参数电路模型包含与等效电容串联的等效电感。更负载更精确的模型也包括变压器，通过将其看作是传输线网络，这一模型的复杂性可扩展到包括高阶影响。
关于8C和8D，示出了一种并联谐振器的简单等效电路。工作频率完全低于谐振频率时，并联谐振器感性行为，可以看成两端口网络。工作频率高于谐振频率时，从电能观点来看，该并联谐振器可被看出时行为如电容器的单端口网络。谐振频率处阻抗最大。
另外，如图8F和8G中所示，提供了两种不同方法来提供接收能量和输出能量的通道。
图9A说明了本发明的IOET 903比分隔两个线圈的分隔板实施例更宽。如图9A和9B中的例子中所示，IOET是两个螺旋之间的空间。在该例子中，能量从绝缘体905进入一个线圈，并传递通过该线圈，作为空气线圈变压器。如图9B中所示，线圈之间具有电容，可被用作能量传递。图9C为示出图9B中所示的A1到A4的通道的等效电路。IOET作为线圈之间的空间的重要性在于，例如，可以进行无线连接，如无线电池充电器。在一个特别的例子中，不使用物理电线连接电源和线圈来传递能量到电池，就可以充电设备(如手机)的电池。无线连接允许选择该特性，假定传送的能量频率和线圈，使得例如在电池和充电器之间存在容性连接。
图10示出了顶部和底部并联谐振器的等效电路。应当理解IOET1003不是分立电容器的集合，而是顶部和底部谐振器之间的IOET上的电容。在足够高的频率下，能力传递将以该谐振器上的电能的形式。这样就取得容性连接，从而允许电能传递。
图11是根据本发明的串联谐振电池充电器的等效电路示意图。该特殊电池充电器具有电平转换器，但是可以使用没有电平转换器的充电器。
在该电路中，可以使用不同螺旋变压器。每一螺旋变压器可以被模拟成具有自身漏电感Ls和磁化电感Lm的变压器，这样，对于给定的负载规格，可以计算出或模拟出合适的谐振电容(Cr)。在测量中，对于所用的螺旋变压器，手工调节该谐振电容。该分隔板可被改装成具有活动夹具的回扫拓扑(图12中所示)，当从C3和C5之间的节点提供输入DC时，谐振电容器C2和整流二极管被短路，D2和D4被去除。
图12是根据即时发明的回扫变压器的示意图。进行一个试验来看一下是否可以使用回扫拓扑来代替串联谐振拓扑。使用回扫拓扑有多个优点：
需要一个肖特基二极管来代替图10中的串联谐振充电器所用的4个。
整流二极管的损耗较小(显著)。
占空比控制的工作频率固定。
不需谐振电容器。
没有谐振电容器之后，更容易获得充电器通用性。
在图11和12中所示的例子中，应当理解，在本发明的宗旨和所附权利要求的范围内，可以进行各种变化。
平面谐振器的设计参数包括，但不限于，物理尺寸，包括纵横比，相对长度，导体厚度，材料特性，如介电常数(或电容率)，渗透性，包括包含IOET的媒介在内的材料的损耗因数，螺旋的圈数。
另外，平面谐振器可包括用来连接电池充电器的装置或者配备有连接电池充电器的装置。
可以对本发明进行各种修改，这些修改都落在本发明的宗旨和所附权利要求的范围内。例如，该谐振器的层数，IOET表面类型，螺旋的数量和厚度，说明例如电池的附件，等等，都可从该说明书中和附图中所描述的结构中修改而来。线圈配置可占据多于一个平面，特别当谐振器装置被编织成织品时。
Claims (36)
1.一种平面功率谐振器，包含：
能量传递接口IOET(215)，所述IOET具有顶面和底面；
设置在所述IOET顶面上的第一线圈导体(210，225)；
设置在所述IOET底面上的第二线圈导体(230)，所述第二线圈导体具有与所述第一线圈导体对齐的垂直轴；和
所述IOET和第一线圈导体具有预定的自谐振频率；
其中第一和第二导体允许能量在该IOET上传递，和
其中该线圈导体包含串联谐振结构和并联谐振结构中的一个。
2.根据权利要求1的平面功率谐振器，其中该第一和第二线圈导体分别包含第一和第二pcb螺旋卷绕导体(910，920)，并且其中该第一和第二螺旋形导体和IOET(215)被集成到一平面结构中。
3.根据权利要求1的平面功率谐振器，其中该IOET(215)包含该第一线圈导体底面上的不导电绝缘薄膜，第二线圈导体顶面上的不导电绝缘薄膜，以及乳化剂，该乳化剂与该第一线圈导体底面之间由空气间隙隔开。
4.根据权利要求2的平面功率谐振器，进一步包含与该第一和第二螺旋卷绕导体中的一个耦合的电池充电电路(1100，1200)。
5.根据权利要求4的平面功率谐振器，其中负载(1105，1205)与该第一和第二螺旋卷绕导体中的另一个耦合。
6.根据权利要求5的平面功率谐振器，其中该负载为磁性耦合，并且其中能量通过磁通量从该电池充电电路向该负载传递。
7.根据权利要求1的平面功率谐振器，其中通过该IOET(215)上第一和第二螺旋形导体的磁通量耦合，施加到第一线圈导体(210，225)的信号被传递到第二线圈导体(230)上。
8.根据权利要求2的平面功率谐振器，进一步包含第三螺旋卷绕导体，在IOET顶面上，该第三螺旋卷绕导体与第一螺旋卷绕导体一起被设计成双线螺旋结构(200)。
9.根据权利要求2的平面功率谐振器，进一步包含第四螺旋卷绕导体，在IOET底面上，该第四螺旋卷绕导体与第二螺旋卷绕导体一起被设计成双线螺旋结构(200)。
10.根据权利要求7的平面功率谐振器，进一步包含第三螺旋卷绕导体，在IOET顶面上，该第三螺旋卷绕导体与第一螺旋卷绕导体一起被设计成双线螺旋结构(200)。
11.根据权利要求10的平面功率谐振器，其中该IOET(215)顶面和底面上的双线螺旋结构(200)形成并联谐振器。
12.根据权利要求10的平面功率谐振器，其中该IOET顶面和底面上的双线螺旋结构形成串联谐振器。
13.根据权利要求7的平面功率谐振器，其中该第一和第三螺旋形导体与该IOET并联耦合。
14.根据权利要求10的平面功率谐振器，其中该第一和第三螺旋形导体与该IOET串联耦合。
15.根据权利要求10的平面功率谐振器，其中该第二和第四螺旋形导体与该IOET并联耦合。
16.根据权利要求10的平面功率谐振器，其中该第二和第四螺旋形导体与该IOET串联耦合。
17.根据权利要求1的平面功率谐振器，进一步包含该IOET顶面上以串联结构排列的第一多个线圈导体，和该IOET底面上以串联结构排列的第二多个线圈导体。
18.根据权利要求17的平面功率谐振器，其中该第一多个和第二多个线圈导体被设计成并联谐振器。
19.根据权利要求17的平面功率谐振器，其中该第一多个和第二多个线圈导体被设计成串联谐振器。
20.根据权利要求1的平面功率谐振器，其中所述IOET包含该材料的相对渗透性μr，其中μr＞1。
21.根据权利要求1的平面功率谐振器，其中所述IOET包含该材料的相对介电常数Er，其中Er＞1。
22.一种平面功率谐振器，包含：
设置在绝缘材料上的平面螺旋导体100；
设置在该螺旋导体第一表面上的第一耦合输入端207；
设置在该绝缘体上与该平面螺旋导体装置相反一面上的第二耦合输入端。
23.一种平面功率谐振器，包含一对相互之间具有空气间隙的平面线圈导体，
该对线圈导体的第一线圈导体910，该第一线圈导体910与绝缘体接触，所述第一线圈导体包括用来与电源耦合的装置；
该对线圈导体的第二线圈导体920，该第二线圈导体与第一线圈导体垂直对齐，所述第二线圈导体包括用来与负载耦合的装置；
其中该对线圈导体之间的电容允许能量从该第一线圈导体传递到第二线圈导体。
24.根据权利要求23的平面功率谐振器，其中用来与电源耦合的装置与电池充电器1100耦合，而用来与负载耦合的装置与电池1105充电，以便无线电池充电。
25.一种平面功率谐振器，包含：
能量传递接口(IOET)215，所述IOET具有顶面和底面；
设置在所述IOET顶面上的第一螺旋形导体210；
设置在所述IOET底面上的第二螺旋形导体230，所述第二螺旋形导体具有与所述第一螺旋形导体对齐的垂直轴；
设置在该IOET顶面上的第一基底材料240；
设置在该IOET底面上的第二基底材料241；
其中所述IOET和该第一和第二螺旋形导体具有预定的自谐振频率。
26.根据权利要求25的平面功率谐振器，进一步包含与该第一和第二螺旋形导体中的一个耦合的电池充电电路1100，1200。
27.根据权利要求25的平面功率谐振器，其中所述IOET包含该材料的相对渗透性μr，其中μr＞1。
28.根据权利要求25的平面功率谐振器，其中所述IOET包含该材料的相对介电常数Er，其中Er＞1。
29.一种提供用于非接触功率传递的平面功率谐振器的方法，包含步骤：
(a)提供能量传递接口(IOET)，所述IOET具有顶面和底面；
(b)将第一螺旋形导体设置在所述IOET的顶面上；
(c)将第二螺旋形导体设置在所述IOET的底面上，使得所述第二螺旋形导体具有与所述第一螺旋形导体对齐的垂直轴；
其中所述IOET和所述第一和第二螺旋形导体被选择具有预定的自谐振频率；和
其中所述第一和第二螺旋被排列成串联谐振器和并联谐振器装置之一。
30.根据权利要求29的方法，其中步骤(b)进一步包含在IOET顶面上将第三螺旋形导体与第一螺旋形导体一起设计成双线螺旋结构，而步骤(c)进一步包含在IOET底面上将第四螺旋形导体与第二螺旋形导体一起设计成双线螺旋结构。
31.根据权利要求29的方法，其中步骤(b)进一步包含在IOET顶面上将第一多个螺旋形导体与第一螺旋形导体一起设计成多线螺旋结构，而步骤(c)进一步包含在IOET底面上将第二多个螺旋形导体与第二螺旋形导体一起设计成多线螺旋结构。
32.根据权利要求31的方法，其中该第一多个和第二多个螺旋形导体被设计成并联谐振器。
33.根据权利要求31的方法，其中该第一多个和第二多个螺旋形导体被设计成串联谐振器。
34.根据权利要求33的方法，其中步骤(a)中提供的所述IOET包含该材料的相对渗透性μr，其中μr＞1。
35.根据权利要求33的方法，其中所述IOET包含相对介电常数Er，其中Er＞1。
36.一种用来提供平面功率谐振器的方法，包含步骤：
(a)将平面螺旋导体设置在绝缘材料上；
(b)连接第一耦合输入端与该螺旋导体的第一表面；
(c)在该绝缘体上与该平面螺旋导体相反一面上设置第二耦合输入端。
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Also Published As
| Publication number | Publication date |
|---|---|
| US6960968B2 (en) | 2005-11-01 |
| DE60326849D1 (de) | 2009-05-07 |
| WO2004004118A1 (en) | 2004-01-08 |
| ATE426941T1 (de) | 2009-04-15 |
| AU2003239738A1 (en) | 2004-01-19 |
| EP1520342B1 (en) | 2009-03-25 |
| US20040000974A1 (en) | 2004-01-01 |
| EP1520342A1 (en) | 2005-04-06 |
| JP2005531242A (ja) | 2005-10-13 |
| KR20050013605A (ko) | 2005-02-04 |
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