CN1645514A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN1645514A
CN1645514A CNA2004100818647A CN200410081864A CN1645514A CN 1645514 A CN1645514 A CN 1645514A CN A2004100818647 A CNA2004100818647 A CN A2004100818647A CN 200410081864 A CN200410081864 A CN 200410081864A CN 1645514 A CN1645514 A CN 1645514A
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CN
China
Prior art keywords
mentioned
information
lines
many
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004100818647A
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English (en)
Chinese (zh)
Inventor
半泽悟
阪田健
梶谷一彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Micron Memory Japan Ltd
Original Assignee
Hitachi Ltd
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Elpida Memory Inc filed Critical Hitachi Ltd
Publication of CN1645514A publication Critical patent/CN1645514A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

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  • Dram (AREA)
  • Compression Or Coding Systems Of Tv Signals (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
CNA2004100818647A 2003-12-25 2004-12-24 半导体器件 Pending CN1645514A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003429505A JP4487237B2 (ja) 2003-12-25 2003-12-25 半導体装置
JP2003429505 2003-12-25

Publications (1)

Publication Number Publication Date
CN1645514A true CN1645514A (zh) 2005-07-27

Family

ID=34545010

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100818647A Pending CN1645514A (zh) 2003-12-25 2004-12-24 半导体器件

Country Status (5)

Country Link
US (3) US7366001B2 (enExample)
EP (1) EP1548747B1 (enExample)
JP (1) JP4487237B2 (enExample)
CN (1) CN1645514A (enExample)
DE (1) DE602004012226T2 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101802925B (zh) * 2007-09-14 2013-11-13 桑迪士克科技有限公司 控制门线架构
CN103915114A (zh) * 2014-04-01 2014-07-09 苏州无离信息技术有限公司 高密度三态内容可寻址存储器单元结构
CN108074611A (zh) * 2016-11-18 2018-05-25 台湾积体电路制造股份有限公司 包含三元内容可定址记忆体阵列的电子电路
CN110033803A (zh) * 2017-11-29 2019-07-19 瑞萨电子株式会社 半导体设备
CN111540397A (zh) * 2019-02-07 2020-08-14 瑞萨电子株式会社 半导体器件
CN113129974A (zh) * 2019-12-31 2021-07-16 美光科技公司 跟踪在存储器装置处执行的操作

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US7634500B1 (en) * 2003-11-03 2009-12-15 Netlogic Microsystems, Inc. Multiple string searching using content addressable memory
US7120040B2 (en) * 2004-06-01 2006-10-10 Mosaid Technologies Incorporation Ternary CAM cell for reduced matchline capacitance
US7366830B1 (en) * 2005-09-01 2008-04-29 Netlogic Microsystems, Inc. Row expansion reduction by inversion for range representation in ternary content addressable memories
JP4738112B2 (ja) * 2005-09-12 2011-08-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7640577B2 (en) * 2006-02-14 2009-12-29 Sony Corporation System and method for authenticating components in wireless home entertainment system
DE102007051192B4 (de) * 2006-11-03 2018-05-03 Micron Technology Inc. Speichervorrichtung, die Drei-Pegel-Zellen einsetzt, und zugehöriges Verfahren zum Verwalten
US7822877B2 (en) * 2006-11-27 2010-10-26 Bay Microsystems, Inc. Network processor integrated circuit with a software programmable search engine communications module
ITVA20070026A1 (it) * 2007-03-02 2008-09-03 St Microelectronics Srl Metodo di gestione di una memoria tri-livello
US7894226B2 (en) * 2008-05-21 2011-02-22 Texas Instruments Incorporated Content addressable memory based on a ripple search scheme
US9015405B2 (en) 2010-06-29 2015-04-21 Hewlett-Packard Development Company, L.P. Method and system for encoding data for storage in a memory array
KR101538560B1 (ko) * 2010-09-08 2015-07-21 닛본 덴끼 가부시끼가이샤 스위치 시스템, 스위치 제어 방법 및 기억 매체
WO2012121689A1 (en) * 2011-03-04 2012-09-13 Hewlett-Packard Development Company, L.P. Antipodal-mapping-based encoders and decoders
US9070435B2 (en) * 2012-09-27 2015-06-30 Broadcom Corporation Pre-computation based ternary content addressable memory
US10320420B2 (en) 2014-01-24 2019-06-11 Hewlett-Packard Enterprise Development LP Bit-flip coding
US20160358653A1 (en) * 2015-06-08 2016-12-08 Altera Corporation Hardware programmable device with integrated search engine
US9659646B1 (en) 2016-01-11 2017-05-23 Crossbar, Inc. Programmable logic applications for an array of high on/off ratio and high speed non-volatile memory cells
US10664343B2 (en) * 2016-02-08 2020-05-26 Sony Corporation Memory controller, non-volatile memory, and method of controlling memory controller
US9728258B1 (en) * 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory
US10332586B1 (en) 2017-12-19 2019-06-25 Micron Technology, Inc. Apparatuses and methods for subrow addressing
KR102598735B1 (ko) * 2018-05-18 2023-11-07 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
CN114638279B (zh) * 2022-01-27 2025-05-27 之江实验室 一种单样本学习相似度计算电路和方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63281299A (ja) * 1987-05-13 1988-11-17 Hitachi Ltd 連想メモリ装置
JPS63308796A (ja) * 1987-06-10 1988-12-16 Hitachi Ltd 内容呼び出しメモリ
US6114873A (en) * 1998-12-17 2000-09-05 Nortel Networks Corporation Content addressable memory programmable array
US6539455B1 (en) * 1999-02-23 2003-03-25 Netlogic Microsystems, Inc. Method and apparatus for determining an exact match in a ternary content addressable memory device
US6094368A (en) 1999-03-04 2000-07-25 Invox Technology Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
US6539466B1 (en) * 2000-02-21 2003-03-25 Hewlett-Packard Company System and method for TLB buddy entry self-timing
JP3845814B2 (ja) * 2000-08-10 2006-11-15 株式会社テルミナス・テクノロジー 連想メモリとその検索方法及びルータとネットワークシステム
US6288922B1 (en) 2000-08-11 2001-09-11 Silicon Access Networks, Inc. Structure and method of an encoded ternary content addressable memory (CAM) cell for low-power compare operation
TW456514U (en) * 2000-12-21 2001-09-21 Mosel Vitelic Inc Connector of reflectivity measuring instrument
US6452822B1 (en) * 2001-04-26 2002-09-17 International Business Machines Corporation Segmented match line arrangement for content addressable memory
JP3863733B2 (ja) * 2001-05-18 2006-12-27 富士通株式会社 連想メモリ装置
JP2003100086A (ja) * 2001-09-25 2003-04-04 Fujitsu Ltd 連想メモリ回路
US6717876B2 (en) * 2001-12-28 2004-04-06 Mosaid Technologies Incorporated Matchline sensing for content addressable memories
US6584003B1 (en) * 2001-12-28 2003-06-24 Mosaid Technologies Incorporated Low power content addressable memory architecture
US6925524B2 (en) 2003-03-20 2005-08-02 Integrated Silicon Solution, Inc. Associated content storage system
US6906937B1 (en) * 2003-03-21 2005-06-14 Netlogic Microsystems, Inc. Bit line control circuit for a content addressable memory
JP2005353107A (ja) * 2004-06-08 2005-12-22 Hitachi Ltd 半導体装置
JP4343859B2 (ja) * 2005-02-17 2009-10-14 株式会社日立製作所 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101802925B (zh) * 2007-09-14 2013-11-13 桑迪士克科技有限公司 控制门线架构
CN103915114A (zh) * 2014-04-01 2014-07-09 苏州无离信息技术有限公司 高密度三态内容可寻址存储器单元结构
CN108074611A (zh) * 2016-11-18 2018-05-25 台湾积体电路制造股份有限公司 包含三元内容可定址记忆体阵列的电子电路
CN108074611B (zh) * 2016-11-18 2021-03-19 台湾积体电路制造股份有限公司 包含三元内容可定址记忆体阵列的电子电路、电子装置及其方法
CN110033803A (zh) * 2017-11-29 2019-07-19 瑞萨电子株式会社 半导体设备
CN111540397A (zh) * 2019-02-07 2020-08-14 瑞萨电子株式会社 半导体器件
CN113129974A (zh) * 2019-12-31 2021-07-16 美光科技公司 跟踪在存储器装置处执行的操作
US12300321B2 (en) 2019-12-31 2025-05-13 Micron Technology, Inc. Tracking operations performed at a memory device

Also Published As

Publication number Publication date
US7366001B2 (en) 2008-04-29
JP4487237B2 (ja) 2010-06-23
EP1548747A1 (en) 2005-06-29
US20080049481A1 (en) 2008-02-28
EP1548747B1 (en) 2008-03-05
US20090150604A1 (en) 2009-06-11
JP2005190543A (ja) 2005-07-14
US7505296B2 (en) 2009-03-17
DE602004012226T2 (de) 2009-03-12
US7881088B2 (en) 2011-02-01
DE602004012226D1 (de) 2008-04-17
US20050157526A1 (en) 2005-07-21

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Open date: 20050727