JP4487237B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4487237B2
JP4487237B2 JP2003429505A JP2003429505A JP4487237B2 JP 4487237 B2 JP4487237 B2 JP 4487237B2 JP 2003429505 A JP2003429505 A JP 2003429505A JP 2003429505 A JP2003429505 A JP 2003429505A JP 4487237 B2 JP4487237 B2 JP 4487237B2
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JP
Japan
Prior art keywords
information
entry
circuit
search
line
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Expired - Fee Related
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JP2003429505A
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English (en)
Japanese (ja)
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JP2005190543A (ja
JP2005190543A5 (enExample
Inventor
悟 半澤
健 阪田
一彦 梶谷
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Micron Memory Japan Ltd
Original Assignee
Elpida Memory Inc
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Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Priority to JP2003429505A priority Critical patent/JP4487237B2/ja
Priority to DE602004012226T priority patent/DE602004012226T2/de
Priority to US11/019,321 priority patent/US7366001B2/en
Priority to EP04030740A priority patent/EP1548747B1/en
Priority to CNA2004100818647A priority patent/CN1645514A/zh
Publication of JP2005190543A publication Critical patent/JP2005190543A/ja
Publication of JP2005190543A5 publication Critical patent/JP2005190543A5/ja
Priority to US11/877,310 priority patent/US7505296B2/en
Priority to US12/367,108 priority patent/US7881088B2/en
Application granted granted Critical
Publication of JP4487237B2 publication Critical patent/JP4487237B2/ja
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

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  • Dram (AREA)
  • Compression Or Coding Systems Of Tv Signals (AREA)
  • Data Exchanges In Wide-Area Networks (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
JP2003429505A 2003-12-25 2003-12-25 半導体装置 Expired - Fee Related JP4487237B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003429505A JP4487237B2 (ja) 2003-12-25 2003-12-25 半導体装置
US11/019,321 US7366001B2 (en) 2003-12-25 2004-12-23 Content addressable memory including main-match lines and sub-match lines
EP04030740A EP1548747B1 (en) 2003-12-25 2004-12-23 Content addressed memory with comprising hierarchically structured match-lines and with search function based on conversion of decimals into blocks of bits
DE602004012226T DE602004012226T2 (de) 2003-12-25 2004-12-23 Inhaltsadressierter Speicher mit hierarchisch strukturierten Trefferleitungen und mit einer auf der Konvertierung von Dezimalen in Blöcke von Bits beruhenden Suchfunktion
CNA2004100818647A CN1645514A (zh) 2003-12-25 2004-12-24 半导体器件
US11/877,310 US7505296B2 (en) 2003-12-25 2007-10-23 Ternary content addressable memory with block encoding
US12/367,108 US7881088B2 (en) 2003-12-25 2009-02-06 Content addressable memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003429505A JP4487237B2 (ja) 2003-12-25 2003-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2005190543A JP2005190543A (ja) 2005-07-14
JP2005190543A5 JP2005190543A5 (enExample) 2005-12-15
JP4487237B2 true JP4487237B2 (ja) 2010-06-23

Family

ID=34545010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003429505A Expired - Fee Related JP4487237B2 (ja) 2003-12-25 2003-12-25 半導体装置

Country Status (5)

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US (3) US7366001B2 (enExample)
EP (1) EP1548747B1 (enExample)
JP (1) JP4487237B2 (enExample)
CN (1) CN1645514A (enExample)
DE (1) DE602004012226T2 (enExample)

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US7634500B1 (en) * 2003-11-03 2009-12-15 Netlogic Microsystems, Inc. Multiple string searching using content addressable memory
US7120040B2 (en) * 2004-06-01 2006-10-10 Mosaid Technologies Incorporation Ternary CAM cell for reduced matchline capacitance
US7366830B1 (en) * 2005-09-01 2008-04-29 Netlogic Microsystems, Inc. Row expansion reduction by inversion for range representation in ternary content addressable memories
JP4738112B2 (ja) * 2005-09-12 2011-08-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7640577B2 (en) * 2006-02-14 2009-12-29 Sony Corporation System and method for authenticating components in wireless home entertainment system
DE102007051192B4 (de) * 2006-11-03 2018-05-03 Micron Technology Inc. Speichervorrichtung, die Drei-Pegel-Zellen einsetzt, und zugehöriges Verfahren zum Verwalten
US7822877B2 (en) * 2006-11-27 2010-10-26 Bay Microsystems, Inc. Network processor integrated circuit with a software programmable search engine communications module
ITVA20070026A1 (it) * 2007-03-02 2008-09-03 St Microelectronics Srl Metodo di gestione di una memoria tri-livello
US7672163B2 (en) * 2007-09-14 2010-03-02 Sandisk Corporation Control gate line architecture
US7894226B2 (en) * 2008-05-21 2011-02-22 Texas Instruments Incorporated Content addressable memory based on a ripple search scheme
US9015405B2 (en) 2010-06-29 2015-04-21 Hewlett-Packard Development Company, L.P. Method and system for encoding data for storage in a memory array
KR101538560B1 (ko) * 2010-09-08 2015-07-21 닛본 덴끼 가부시끼가이샤 스위치 시스템, 스위치 제어 방법 및 기억 매체
WO2012121689A1 (en) * 2011-03-04 2012-09-13 Hewlett-Packard Development Company, L.P. Antipodal-mapping-based encoders and decoders
US9070435B2 (en) * 2012-09-27 2015-06-30 Broadcom Corporation Pre-computation based ternary content addressable memory
US10320420B2 (en) 2014-01-24 2019-06-11 Hewlett-Packard Enterprise Development LP Bit-flip coding
CN103915114A (zh) * 2014-04-01 2014-07-09 苏州无离信息技术有限公司 高密度三态内容可寻址存储器单元结构
US20160358653A1 (en) * 2015-06-08 2016-12-08 Altera Corporation Hardware programmable device with integrated search engine
US9659646B1 (en) 2016-01-11 2017-05-23 Crossbar, Inc. Programmable logic applications for an array of high on/off ratio and high speed non-volatile memory cells
US10664343B2 (en) * 2016-02-08 2020-05-26 Sony Corporation Memory controller, non-volatile memory, and method of controlling memory controller
US9728258B1 (en) * 2016-10-04 2017-08-08 National Tsing Hua University Ternary content addressable memory
US9768179B1 (en) * 2016-11-18 2017-09-19 Taiwan Semiconductor Manufacturing Co., Ltd. Connection structures for routing misaligned metal lines between TCAM cells and periphery circuits
JP2019102108A (ja) * 2017-11-29 2019-06-24 ルネサスエレクトロニクス株式会社 半導体装置
US10332586B1 (en) 2017-12-19 2019-06-25 Micron Technology, Inc. Apparatuses and methods for subrow addressing
KR102598735B1 (ko) * 2018-05-18 2023-11-07 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
JP7149198B2 (ja) * 2019-02-07 2022-10-06 ルネサスエレクトロニクス株式会社 半導体装置
US11342024B2 (en) 2019-12-31 2022-05-24 Micron Technology, Inc. Tracking operations performed at a memory device
CN114638279B (zh) * 2022-01-27 2025-05-27 之江实验室 一种单样本学习相似度计算电路和方法

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JPS63281299A (ja) * 1987-05-13 1988-11-17 Hitachi Ltd 連想メモリ装置
JPS63308796A (ja) * 1987-06-10 1988-12-16 Hitachi Ltd 内容呼び出しメモリ
US6114873A (en) * 1998-12-17 2000-09-05 Nortel Networks Corporation Content addressable memory programmable array
US6539455B1 (en) * 1999-02-23 2003-03-25 Netlogic Microsystems, Inc. Method and apparatus for determining an exact match in a ternary content addressable memory device
US6094368A (en) 1999-03-04 2000-07-25 Invox Technology Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
US6539466B1 (en) * 2000-02-21 2003-03-25 Hewlett-Packard Company System and method for TLB buddy entry self-timing
JP3845814B2 (ja) * 2000-08-10 2006-11-15 株式会社テルミナス・テクノロジー 連想メモリとその検索方法及びルータとネットワークシステム
US6288922B1 (en) 2000-08-11 2001-09-11 Silicon Access Networks, Inc. Structure and method of an encoded ternary content addressable memory (CAM) cell for low-power compare operation
TW456514U (en) * 2000-12-21 2001-09-21 Mosel Vitelic Inc Connector of reflectivity measuring instrument
US6452822B1 (en) * 2001-04-26 2002-09-17 International Business Machines Corporation Segmented match line arrangement for content addressable memory
JP3863733B2 (ja) * 2001-05-18 2006-12-27 富士通株式会社 連想メモリ装置
JP2003100086A (ja) * 2001-09-25 2003-04-04 Fujitsu Ltd 連想メモリ回路
US6717876B2 (en) * 2001-12-28 2004-04-06 Mosaid Technologies Incorporated Matchline sensing for content addressable memories
US6584003B1 (en) * 2001-12-28 2003-06-24 Mosaid Technologies Incorporated Low power content addressable memory architecture
US6925524B2 (en) 2003-03-20 2005-08-02 Integrated Silicon Solution, Inc. Associated content storage system
US6906937B1 (en) * 2003-03-21 2005-06-14 Netlogic Microsystems, Inc. Bit line control circuit for a content addressable memory
JP2005353107A (ja) * 2004-06-08 2005-12-22 Hitachi Ltd 半導体装置
JP4343859B2 (ja) * 2005-02-17 2009-10-14 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
US7366001B2 (en) 2008-04-29
EP1548747A1 (en) 2005-06-29
US20080049481A1 (en) 2008-02-28
EP1548747B1 (en) 2008-03-05
CN1645514A (zh) 2005-07-27
US20090150604A1 (en) 2009-06-11
JP2005190543A (ja) 2005-07-14
US7505296B2 (en) 2009-03-17
DE602004012226T2 (de) 2009-03-12
US7881088B2 (en) 2011-02-01
DE602004012226D1 (de) 2008-04-17
US20050157526A1 (en) 2005-07-21

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