CN1522127A - 医用x射线装置及其电源组件 - Google Patents
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Abstract
本发明涉及一种医用X射线装置及其电源组件。用于X射线源的电源组件(11)包括一个由一个陶瓷基板(12)形成的基底。几个半导体器件(13)通过无铅焊料16装接在该陶瓷基板上。这样,就可以成功地避免由于高热负荷的变化在该基底中所引起的裂缝,从而延长了本发明的电源组件的寿命。本发明还涉及一种用于医用X射线装置的依据本发明的电源组件。
Description
本发明涉及一种设置有至少一个用于X射线源的电源组件的医用X射线装置,该电源组件包括一基底,该基底包括陶瓷基板和一个或多个通过焊接装接在该陶瓷基板上的半导体器件。
这种医用X射线装置实际上是已知的,并且目前正由本申请人制造。在该已知的装置中,基底还由较厚的金属的支承板形成,陶瓷基板通过另一个焊料层装接在该支承板上。
在医用X射线装置中,电源组件承受了较高的热负荷。这样常常会由于基底的不同材料的不同热膨胀系数而在基底中产生裂缝。其结果将使电源组件的寿命缩短。医用X射线装置由于其中的热负荷随着时间迅速地变化而使其寿命变得最短。这种医用X射线装置的实例为计算机化的X射线断层摄影装置和C-弓形装置,这些装置在一次医疗检查期间将频繁地起动,停止和重新起动。
第二个问题是由于环境考虑而形成的。根据将来的立法,焊料应当由无铅原料制成。在已知的装置中,使用无铅焊料看来是不可能的,因为没有任何一种无铅焊料适合用于这种目的,并且在目前看来合适的熔点温度方面有足够大的不同。
本发明的目的是提供一种如前序部分所述的医用X射线装置,其能解决上面两个问题。
本发明的医用X射线装置的特征在于,该基底由一个陶瓷基板所形成,以及半导体器件用无铅焊料装接在该陶瓷基板上。
由一个陶瓷基板所形成的基底具有基本上均匀的热性能。而且,使用另外一个焊料层来把陶瓷基板装接在金属的支承板上就变得多余了。因为裂缝主要在该焊料层中产生,这样就显著地延长了电源组件的寿命。
应当指出,一种包括一个由具有一个或多个金属层的陶瓷基板形成的基底以及一个或多个通过焊料装接在该陶瓷基板上的半导体器件的电源组件可以从美国专利US 6 122 170中获知。该专利描述了与上述现有技术水平的一个成形部件相类似的通用的电源组件,其中省去了金属的支承板。但是,该专利对无铅焊料的使用没有做出说明,也没有对它在产生上述技术问题的医用X射线装置中的具体使用做出说明。
根据本发明的医用X射线装置的第一个优选的实施例,无铅焊料的原料包括SnAg,SnAgBiB,SnAgCu和/或其所有的可制造的合金。这些焊料的相关的机械和物理特性使得它们适用于所希望的用途。其热机械疲劳寿命与含铅焊料的热机械疲劳寿命相当。这些选定的无铅焊料与大多数已知的表面光洁度相一致。
根据本发明的医用X射线装置的另一个优选的实施例,陶瓷基板具有3毫米的最小厚度。这个厚度允许使用已知的电源组件的构造。随所选择的厚度而定,也可以使用一定数量的充填材料。
在本发明的医用X射线装置的另一个优选的实施例中,陶瓷基板的材料包括AlN,该材料具有良好的导热性。也可以使用AlSiO2作为一种替换材料。
本发明还涉及一种如前述权利要求中一项或多项所述的可供医用X射线装置里使用的电源组件。
本发明将通过附图进一步做出说明,附图中:
图1以截面图的形式示意地示出了本发明的医用X射线装置;
图2以侧视图的形式示意地示出了图1中的医用X射线装置的电源组件一个优选实施例;以及
图3示出了图2中的电源组件的优选实施例的一部分的详细的截面图。
在所有的附图中,相同的标号用来表示相同的部件。
图1示意地示出了本发明的X射线装置1的一个截面。X射线装置1是一种设置有用于一个待检查的对象(通常是一个病人)的台架2的医用X射线装置。这种X射线装置的一个实例是计算机化的X射线断层摄影装置(CT)。装置1的X射线源包括一个X射线管3,一个高压电柜4和一个变换器5。
图2示意地示出了变换器5的一个优选实施例的一部分的侧视图,该变换器装有一个或多个用来驱动医用X射线装置1的X射线源的电源组件11。
图3示出了包括一个由具有金属层14和15的陶瓷基板12形成的基底的电源组件11的一部分,在该基板上装接有几个半导体器件13。在图示的实施例中,半导体器件13最好是用来完成直流-交流变换的IGBT芯片(IGBT=绝缘栅极双极性晶体管)。该基底装接在一个具有适当的冷却装置(例如风扇6,见图2)的热辐射板17上。还设置有几个用来建立电连接的装置,例如电极7(见图2)。
其上装接有IGBT芯片的基底12是电绝缘的,因此可以由IGBT芯片13的前面和后面来传递较大的电流。为了与电极相连接,基底12上设置有导电材料层14。通常,层14是一层金属(例如铜)薄膜。由于制造的原因,层14存在于基底12的两个侧面上。
在工作期间,电源组件11控制着较大的电流。其结果是,IGBT芯片13将散发大量的热量。由此,对电源组件的热辐射特性将提出较高的要求。基底12的材料应当容易散热并且具有较高的热传导特性。基底12最好由陶瓷材料制成,最好是AlN。或者,也可以使用AlSiO2。
基底12的厚度最好基本上与已知的电源组件的基底厚度相同,该厚度包括金属支承板和其上具有一个或多个中间层(例如另外的焊料层和导电层14)的陶瓷基板。已知基底的常见的厚度尺寸约为5毫米。陶瓷基板12的厚度最好在3至5毫米之间。使用这些尺寸可以使电源组件的剩余部分的构造保持不变。如果需要,也可以使用适当的充填材料,例如铜条。这种厚度的另一个优点是,基板将变得更加坚固,从而为不对称地安装在该基板上的各种装置(例如芯片,二极管等)创造条件,这些装置都具有不同的尺寸。
半导体器件13通过无铅焊料16装接在陶瓷基板12上。该无铅焊料的原料最好包括SnAg,SnAgBiB,SnAgCu和/或其所有的可制造的合金。根据一项研究,已经发现使用这些焊料的无铅波动焊接技术在技术上是可行的。此外,已经对这些焊料的相关的机械和物理特性进行了研究,例如热膨胀系数和熔融温度,这些特性与含铅焊料的特性相似。重要的工艺参数,例如金属熔化浴温度,在垫板与焊料之间的接触时间以及预热温度,也都在实用的范围内。有关这些和其他适用的无铅焊料的更多的信息可以在2000年9月12日佛罗里达州的迈阿密出版的2000年工业过程控制会议文集内的Biglari等人的论文“具有VOC-Free Fluxes Part I的无铅波动焊接:以SnAgCu,SnBiAg和SnCu为基本成分的合金研制和工艺特征”中获得,该论文通过引用结合在本文中。
焊接促进层15位于导电层14与无铅焊料16之间。层15最好包括Ni,它在相关技术中由于其良好的浸润特性而众所周知。
基底12通过具有弹性特征的固定装置8固定在热辐射板17上。在本技术领域中,各种固定装置是已知的,例如夹持器或弹簧。热辐射板17由一种具有较高的热导率的材料形成,例如铜或铝。最好其上形成有一个硅油复合物等薄层18,以便减少在界面处的热阻。
当然,本发明并不局限于该描述或图示的实施例,而是可以广泛地把范围扩大到属于本发明的附属权利要求书所规定的范围内的任何实施例,如同在上述说明和附图中所看到的那样。
Claims (8)
1.一种医用X射线装置(1),其设置有至少一个用于X射线源(3,4,5)的电源组件(11),该电源组件包括一基底,该基底包括一个陶瓷基板(12),以及一个或多个通过焊接装接在该陶瓷基板上的半导体器件(13),其特征在于,该基底是由一个陶瓷基板形成的,并且该半导体器件是借助于无铅焊料(16)装接在该陶瓷基板上的。
2.如权利要求1所述的医用X射线装置,其特征在于,该无铅焊料的原料包括SnAg或其合金。
3.如权利要求1或2所述的医用X射线装置,其特征在于,该无铅焊料的原料包括SnAgBiB或其合金。
4.如权利要求1,2或3所述的医用X射线装置,其特征在于,该无铅焊料的原料包括SnAgCu或其合金。
5.如前述权利要求中一项或多项所述的医用X射线装置,其特征在于,该陶瓷基板具有3毫米的最小厚度。
6.如前述权利要求中一项或多项所述的医用X射线装置,其特征在于,该陶瓷基板的原料包括AlN。
7.如前述权利要求中一项或多项所述的医用X射线装置,其特征在于,该陶瓷基板的原料包括AlSiO2。
8.一种用于如前述权利要求中一项或多项所述的医用X射线装置的电源组件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP01202505 | 2001-06-28 | ||
EP01202505.2 | 2001-06-28 |
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CN1522127A true CN1522127A (zh) | 2004-08-18 |
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CNA028131495A Pending CN1522127A (zh) | 2001-06-28 | 2002-06-28 | 医用x射线装置及其电源组件 |
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US (1) | US20040174954A1 (zh) |
EP (1) | EP1404224A1 (zh) |
JP (1) | JP2004530505A (zh) |
CN (1) | CN1522127A (zh) |
WO (1) | WO2003002000A1 (zh) |
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JP5128052B2 (ja) * | 2005-04-22 | 2013-01-23 | 浜松ホトニクス株式会社 | 光検出ユニット、光検出装置、及びx線断層撮像装置 |
US20070080559A1 (en) * | 2005-04-28 | 2007-04-12 | L&L Products, Inc. | Member for baffling, reinforcement of sealing |
CA3022812C (en) | 2016-05-03 | 2021-09-07 | Opus 12 Incorporated | Reactor with advanced architecture for the electrochemical reaction of co2, co, and other chemical compounds |
Family Cites Families (18)
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US4013936A (en) * | 1975-11-12 | 1977-03-22 | General Electric Company | Regulated high voltage d.c. supply utilizing a plurality of d.c. to d.c. converter modules |
DE69417553T2 (de) * | 1993-04-22 | 1999-10-07 | Federalloy Inc | Sanitaereinrichtungen |
JP3454888B2 (ja) * | 1993-11-24 | 2003-10-06 | 富士通株式会社 | 電子部品ユニット及びその製造方法 |
DE69535775D1 (de) * | 1994-10-07 | 2008-08-07 | Hitachi Ltd | Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen |
US5763059A (en) * | 1995-03-31 | 1998-06-09 | Kyocera Corporation | Circuit board |
JP4077888B2 (ja) * | 1995-07-21 | 2008-04-23 | 株式会社東芝 | セラミックス回路基板 |
US5949654A (en) * | 1996-07-03 | 1999-09-07 | Kabushiki Kaisha Toshiba | Multi-chip module, an electronic device, and production method thereof |
JP3369410B2 (ja) * | 1996-09-02 | 2003-01-20 | 松下電器産業株式会社 | 半導体装置の実装方法 |
DE19700963C2 (de) * | 1997-01-14 | 2000-12-21 | Telefunken Microelectron | Verfahren zur Herstellung eines Leistungsmoduls mit einer aktive Halbleiterbauelemente und passive Halbleiterbauelemente aufweisenden Schaltungsanordnung |
US5990564A (en) * | 1997-05-30 | 1999-11-23 | Lucent Technologies Inc. | Flip chip packaging of memory chips |
JP3332810B2 (ja) * | 1997-07-15 | 2002-10-07 | 株式会社日立製作所 | インバータ制御装置 |
US5912943A (en) * | 1997-11-26 | 1999-06-15 | Picker International, Inc. | Cooling system for a sealed housing positioned in a sterile environment |
JP2000082774A (ja) * | 1998-06-30 | 2000-03-21 | Sumitomo Electric Ind Ltd | パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル |
FR2781926B1 (fr) * | 1998-07-31 | 2000-10-06 | St Microelectronics Sa | Support de convoyage de brasage |
JP4334054B2 (ja) * | 1999-03-26 | 2009-09-16 | 株式会社東芝 | セラミックス回路基板 |
WO2001035459A1 (en) * | 1999-11-10 | 2001-05-17 | Ibiden Co., Ltd. | Ceramic substrate |
US6734540B2 (en) * | 2000-10-11 | 2004-05-11 | Altera Corporation | Semiconductor package with stress inhibiting intermediate mounting substrate |
US6476332B1 (en) * | 2001-09-12 | 2002-11-05 | Visteon Global Technologies, Inc. | Conductor systems for thick film electronic circuits |
-
2002
- 2002-06-28 JP JP2003508246A patent/JP2004530505A/ja active Pending
- 2002-06-28 EP EP02740999A patent/EP1404224A1/en not_active Withdrawn
- 2002-06-28 CN CNA028131495A patent/CN1522127A/zh active Pending
- 2002-06-28 US US10/481,809 patent/US20040174954A1/en not_active Abandoned
- 2002-06-28 WO PCT/IB2002/002483 patent/WO2003002000A1/en active Application Filing
Also Published As
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WO2003002000A1 (en) | 2003-01-09 |
EP1404224A1 (en) | 2004-04-07 |
US20040174954A1 (en) | 2004-09-09 |
JP2004530505A (ja) | 2004-10-07 |
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