CN1510520A - 通过照明源优化提供透镜像差补偿的方法和设备 - Google Patents

通过照明源优化提供透镜像差补偿的方法和设备 Download PDF

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Publication number
CN1510520A
CN1510520A CNA2003101237459A CN200310123745A CN1510520A CN 1510520 A CN1510520 A CN 1510520A CN A2003101237459 A CNA2003101237459 A CN A2003101237459A CN 200310123745 A CN200310123745 A CN 200310123745A CN 1510520 A CN1510520 A CN 1510520A
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CN
China
Prior art keywords
yardstick
cost
illumination profile
light illumination
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2003101237459A
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English (en)
Chinese (zh)
Inventor
A
A·利布岑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML FRISKET TOOLS BV
Original Assignee
ASML FRISKET TOOLS BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML FRISKET TOOLS BV filed Critical ASML FRISKET TOOLS BV
Publication of CN1510520A publication Critical patent/CN1510520A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CNA2003101237459A 2002-11-12 2003-11-12 通过照明源优化提供透镜像差补偿的方法和设备 Pending CN1510520A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42530902P 2002-11-12 2002-11-12
US60/425309 2002-11-12

Publications (1)

Publication Number Publication Date
CN1510520A true CN1510520A (zh) 2004-07-07

Family

ID=32176754

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2003101237459A Pending CN1510520A (zh) 2002-11-12 2003-11-12 通过照明源优化提供透镜像差补偿的方法和设备

Country Status (7)

Country Link
US (1) US7034919B2 (https=)
EP (1) EP1420301A3 (https=)
JP (2) JP4606732B2 (https=)
KR (1) KR100592575B1 (https=)
CN (1) CN1510520A (https=)
SG (1) SG116510A1 (https=)
TW (1) TWI277767B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102866589A (zh) * 2011-07-05 2013-01-09 佳能株式会社 确定方法和信息处理装置

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* Cited by examiner, † Cited by third party
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US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7471375B2 (en) * 2003-02-11 2008-12-30 Asml Netherlands B.V. Correction of optical proximity effects by intensity modulation of an illumination arrangement
EP1696273B1 (en) * 2005-02-23 2008-08-06 ASML MaskTools B.V. Method and apparatus for optimising illumination for full-chip layer
US7379170B2 (en) * 2005-05-02 2008-05-27 Invarium, Inc. Apparatus and method for characterizing an image system in lithography projection tool
WO2007018464A2 (en) * 2005-08-08 2007-02-15 Micronic Laser Systems Ab Method and apparatus for projection printing
US7934172B2 (en) * 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
US20080278698A1 (en) * 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
US8237913B2 (en) * 2007-05-08 2012-08-07 Asml Netherlands B.V. Lithographic apparatus and method
JP5225463B2 (ja) 2008-06-03 2013-07-03 エーエスエムエル ネザーランズ ビー．ブイ． レンズ加熱補償方法
CN102224459B (zh) * 2008-11-21 2013-06-19 Asml荷兰有限公司 用于优化光刻过程的方法及设备
EP2207064A1 (en) 2009-01-09 2010-07-14 Takumi Technology Corporation Method of selecting a set of illumination conditions of a lithographic apparatus for optimizing an integrated circuit physical layout
NL2007577A (en) 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization of source, mask and projection optics.
DE102011076145B4 (de) * 2011-05-19 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zum Zuordnen einer Pupillenfacette eines Pupillenfacettenspiegels einer Beleuchtungsoptik einer Projektionsbelichtungsanlage zu einer Feldfacette eines Feldfacettenspiegels der Beleuchtungsoptik
US9529268B2 (en) * 2014-04-03 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for improving pattern transfer
US10785394B2 (en) 2015-08-28 2020-09-22 Kla Corporation Imaging performance optimization methods for semiconductor wafer inspection
CN105487248B (zh) * 2015-12-16 2018-11-23 宁波舜宇光电信息有限公司 通过调整镜片实现光学系统成像质量的补偿方法

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US5300786A (en) 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
JPH0729813A (ja) * 1993-07-07 1995-01-31 Nippon Telegr & Teleph Corp <Ntt> 投影露光の最適化方法
JP3107958B2 (ja) * 1993-10-12 2000-11-13 キヤノン株式会社 露光装置
US5680588A (en) 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
WO1997033205A1 (en) 1996-03-06 1997-09-12 Philips Electronics N.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
US5822066A (en) * 1997-02-26 1998-10-13 Ultratech Stepper, Inc. Point diffraction interferometer and pin mirror for use therewith
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
US5965309A (en) 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
US6033814A (en) 1998-02-26 2000-03-07 Micron Technology, Inc. Method for multiple process parameter matching
US6128067A (en) 1998-04-28 2000-10-03 Kabushiki Kaisha Toshiba Correcting method and correcting system for mask pattern
US6466304B1 (en) 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
JP2000232057A (ja) 1999-02-10 2000-08-22 Hitachi Ltd レジストパターンのシミュレーション方法およびパターン形成方法
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
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US6525302B2 (en) * 2001-06-06 2003-02-25 The Regents Of The University Of Colorado Wavefront coding phase contrast imaging systems

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102866589A (zh) * 2011-07-05 2013-01-09 佳能株式会社 确定方法和信息处理装置
CN102866589B (zh) * 2011-07-05 2015-05-27 佳能株式会社 确定方法和信息处理装置
US9551926B2 (en) 2011-07-05 2017-01-24 Canon Kabushiki Kaisha Determination method, storage medium and information processing apparatus

Also Published As

Publication number Publication date
EP1420301A2 (en) 2004-05-19
JP4974972B2 (ja) 2012-07-11
US7034919B2 (en) 2006-04-25
EP1420301A3 (en) 2005-11-23
JP2004289129A (ja) 2004-10-14
TWI277767B (en) 2007-04-01
TW200416414A (en) 2004-09-01
KR20040044340A (ko) 2004-05-28
SG116510A1 (https=) 2005-11-28
KR100592575B1 (ko) 2006-06-26
US20040184030A1 (en) 2004-09-23
JP2008294456A (ja) 2008-12-04
JP4606732B2 (ja) 2011-01-05

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