KR100592575B1 - 조명 소스 최적화에 의해 렌즈 수차 보상을 제공하는 방법및 장치 - Google Patents

조명 소스 최적화에 의해 렌즈 수차 보상을 제공하는 방법및 장치 Download PDF

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KR100592575B1
KR100592575B1 KR1020030079923A KR20030079923A KR100592575B1 KR 100592575 B1 KR100592575 B1 KR 100592575B1 KR 1020030079923 A KR1020030079923 A KR 1020030079923A KR 20030079923 A KR20030079923 A KR 20030079923A KR 100592575 B1 KR100592575 B1 KR 100592575B1
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South Korea
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cost metric
illumination profile
source illumination
performance
evaluating
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English (en)
Korean (ko)
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KR20040044340A (ko
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리브헨아르민
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에이에스엠엘 마스크툴즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020030079923A 2002-11-12 2003-11-12 조명 소스 최적화에 의해 렌즈 수차 보상을 제공하는 방법및 장치 Expired - Lifetime KR100592575B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42530902P 2002-11-12 2002-11-12
US60/425,309 2002-11-12

Publications (2)

Publication Number Publication Date
KR20040044340A KR20040044340A (ko) 2004-05-28
KR100592575B1 true KR100592575B1 (ko) 2006-06-26

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ID=32176754

Family Applications (1)

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KR1020030079923A Expired - Lifetime KR100592575B1 (ko) 2002-11-12 2003-11-12 조명 소스 최적화에 의해 렌즈 수차 보상을 제공하는 방법및 장치

Country Status (7)

Country Link
US (1) US7034919B2 (https=)
EP (1) EP1420301A3 (https=)
JP (2) JP4606732B2 (https=)
KR (1) KR100592575B1 (https=)
CN (1) CN1510520A (https=)
SG (1) SG116510A1 (https=)
TW (1) TWI277767B (https=)

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* Cited by examiner, † Cited by third party
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US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7471375B2 (en) * 2003-02-11 2008-12-30 Asml Netherlands B.V. Correction of optical proximity effects by intensity modulation of an illumination arrangement
EP1696273B1 (en) * 2005-02-23 2008-08-06 ASML MaskTools B.V. Method and apparatus for optimising illumination for full-chip layer
US7379170B2 (en) * 2005-05-02 2008-05-27 Invarium, Inc. Apparatus and method for characterizing an image system in lithography projection tool
WO2007018464A2 (en) * 2005-08-08 2007-02-15 Micronic Laser Systems Ab Method and apparatus for projection printing
US7934172B2 (en) * 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
US20080278698A1 (en) * 2007-05-08 2008-11-13 Asml Netherlands B.V. Lithographic apparatus and method
US8237913B2 (en) * 2007-05-08 2012-08-07 Asml Netherlands B.V. Lithographic apparatus and method
JP5225463B2 (ja) 2008-06-03 2013-07-03 エーエスエムエル ネザーランズ ビー．ブイ． レンズ加熱補償方法
CN102224459B (zh) * 2008-11-21 2013-06-19 Asml荷兰有限公司 用于优化光刻过程的方法及设备
EP2207064A1 (en) 2009-01-09 2010-07-14 Takumi Technology Corporation Method of selecting a set of illumination conditions of a lithographic apparatus for optimizing an integrated circuit physical layout
NL2007577A (en) 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization of source, mask and projection optics.
DE102011076145B4 (de) * 2011-05-19 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zum Zuordnen einer Pupillenfacette eines Pupillenfacettenspiegels einer Beleuchtungsoptik einer Projektionsbelichtungsanlage zu einer Feldfacette eines Feldfacettenspiegels der Beleuchtungsoptik
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
US9529268B2 (en) * 2014-04-03 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for improving pattern transfer
US10785394B2 (en) 2015-08-28 2020-09-22 Kla Corporation Imaging performance optimization methods for semiconductor wafer inspection
CN105487248B (zh) * 2015-12-16 2018-11-23 宁波舜宇光电信息有限公司 通过调整镜片实现光学系统成像质量的补偿方法

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US5300786A (en) 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
JPH0729813A (ja) * 1993-07-07 1995-01-31 Nippon Telegr & Teleph Corp <Ntt> 投影露光の最適化方法
JP3107958B2 (ja) * 1993-10-12 2000-11-13 キヤノン株式会社 露光装置
US5680588A (en) 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
WO1997033205A1 (en) 1996-03-06 1997-09-12 Philips Electronics N.V. Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
US5822066A (en) * 1997-02-26 1998-10-13 Ultratech Stepper, Inc. Point diffraction interferometer and pin mirror for use therewith
DE69829614T2 (de) 1997-03-10 2006-03-09 Asml Netherlands B.V. Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
US5965309A (en) 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
US6033814A (en) 1998-02-26 2000-03-07 Micron Technology, Inc. Method for multiple process parameter matching
US6128067A (en) 1998-04-28 2000-10-03 Kabushiki Kaisha Toshiba Correcting method and correcting system for mask pattern
US6466304B1 (en) 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
JP2000232057A (ja) 1999-02-10 2000-08-22 Hitachi Ltd レジストパターンのシミュレーション方法およびパターン形成方法
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
US6525302B2 (en) * 2001-06-06 2003-02-25 The Regents Of The University Of Colorado Wavefront coding phase contrast imaging systems

Also Published As

Publication number Publication date
EP1420301A2 (en) 2004-05-19
JP4974972B2 (ja) 2012-07-11
US7034919B2 (en) 2006-04-25
EP1420301A3 (en) 2005-11-23
JP2004289129A (ja) 2004-10-14
TWI277767B (en) 2007-04-01
CN1510520A (zh) 2004-07-07
TW200416414A (en) 2004-09-01
KR20040044340A (ko) 2004-05-28
SG116510A1 (https=) 2005-11-28
US20040184030A1 (en) 2004-09-23
JP2008294456A (ja) 2008-12-04
JP4606732B2 (ja) 2011-01-05

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