CN1509838A - 制造无铅焊料凸块的方法 - Google Patents

制造无铅焊料凸块的方法 Download PDF

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CN1509838A
CN1509838A CNA2003101047806A CN200310104780A CN1509838A CN 1509838 A CN1509838 A CN 1509838A CN A2003101047806 A CNA2003101047806 A CN A2003101047806A CN 200310104780 A CN200310104780 A CN 200310104780A CN 1509838 A CN1509838 A CN 1509838A
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layer
scolder
copper
solder
ubm
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CN1254862C (zh
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张世映
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Abstract

一种制造无铅焊料凸块的方法，包括：提供基片，所述基片具有带开放电极焊盘的保护层；在基片上形成UBM(底部凸起金属化)层；在UBM层上光刻光刻胶，除UBM层对应电极焊盘的部分之外；在UBM层对应电极焊盘的部分上形成铜层；将焊料电镀在铜层上；去除光刻胶；以及使用焊料作为掩模蚀刻UBM层，并且回流焊料、制造焊料凸块。

Description

制造无铅焊料凸块的方法
技术领域
本发明涉及通过使用倒装片(flip-chip)互连制造焊料凸块(solderbump)的方法，所述焊料凸块是半导体的终端，本发明尤其涉及容易地制造无铅焊料凸块的方法，从而减少了制造成本，并且能够容易地实现电镀控制。
背景技术
传统的丝焊方法是将半导体基片的电极焊盘(electrode pad)电气连接到带有金线的铅框架的铅线上。相反地，倒装片方法是将半导体基片连接到PCB(印刷电路板)的终端，其中半导体基片是嵌入的，在半导体基片上形成有凸块。
传统上使用以铅(Pb)和锡(Sn)作为主要成分的焊料，以便凸块可以形成在半导体基片的电极焊盘上。
由于不断增加的环境问题，在电子产品中消除对铅的使用的规定已被提出，先始于欧洲和日本，最近已遍布全世界。在欧洲，汽车再循环法控制基于铅的焊料。在日本，根据废物和清洁法(废物处理和公共清洁法，即“Waste Treatment and Public Cleanup Law”)以及家庭用具再循环法(the Home appliances Recycling Law)，必须将铅从家庭用具中去除。因此，制造含铅电子产品的工艺就需要转化成无铅工艺，在半导体基片上的焊料凸块就需要通过使用无铅焊料来形成。
因此，使用铅-银-铜(Pb-Ag-Cu)三元合金，或锡-银(Sn-Ag)或锡-铜(Sn-Cu)二元合金代替传统上使用的铅-锡(Pb-Sn)焊料。
然而，因为上述的无铅焊料的熔点根据合金组分的比率变化而变化很大，因此可用在270℃回流(reflow)温度下的无铅焊料的合金组分比率具有很窄的合金组分变化范围，在大约3％到大约7％的范围内。并且，因为以非常小的量加入的铜和银(大约1％到2％)使合金的熔点增加10℃或更多，而且会使连接失败，所以合金组分的比率必须被精确地设定。此外，传统上使用络合剂，因为与锡相比具有高还原电势的银和铜会优先被电镀。然而，由于络合剂的价格高，因此制造成本高。
发明内容
本发明的一方面是提供一种仅使用一元锡电镀容易地制造二元无铅焊料凸块，或仅使用二元锡-银电镀容易地制造锡-银-铜三元无铅焊料凸块的方法，这是通过在回流焊料时，把作为无铅焊料成分之一的铜敷设在焊料凸块下部中的UBM(底部凸起金属化，under bumpmetallization)层上，从而将铜扩散入焊料中而实现的。
本发明的附加方面内容和/或优点将在以下的描述中部分得到阐述，部分从说明书中可以得到显而易见的了解，或者可以通过实施本发明而得知。
为了实现本发明的以上和/和其他方面，提供一种制造无铅焊料凸块的方法，包括：提供基片，所述基片具有带开放电极焊盘的保护层；在基片上形成UBM(底部凸起金属化)层；在UBM层上光刻光刻胶，除UBM层对应电极焊盘的部分之外；在UBM层对应电极焊盘的部分上形成铜层；将焊料电镀在铜层上；去除光刻胶；以及使用焊料作为掩模蚀刻UBM层，并且回流焊料、制造焊料凸块。
在一个实例中，焊料包括锡。
在另一个实例中，焊料进一步包括银。
在大约230℃到大约270℃的温度下实施回流大约1分钟到大约20分钟。
铜层的厚度范围从大约5μm到大约20μm。
UBM层包括涂到基片上的第一层和涂到第一层上的第二层，其中所述第一层具有钛(Ti)、钨(W)、铬(Cr)和钛/钨(TiW)其中之一，而第二层具有铜(Cu)、镍(Ni)、镍/钒(Ni-V)合金以及铜/镍(Cu-Ni)合金其中之一。
为了实现根据本发明的以上和/或其他方面，提供一种半导体基片的无铅焊料凸块，包括：半导体基片；形成在半导体基片上的电极焊盘；形成在半导体基片上电极焊盘周围的保护层；形成在电极焊盘和保护层上的底部凸起金属化层(UBM)；形成在UBM层上的光刻胶，除UBM层对应电极焊盘的部分之外；形成在对应电极焊盘的UBM层上的铜层；以及电镀在铜层上的焊料，其中光刻胶被去除，使用焊料作为掩模蚀刻UBM层，以及回流焊料以形成焊料凸块。
随后将变得明显的这些和其他方面和/或优点存在于以下对结构和操作的更全面的描述和阐述中，并且参考附图形成描述和阐述的一部分，其中全文中相同的标号表示相同的部件。
附图简述
参照附图，通过以下对优选实施例的描述，本发明的这些和/或其他方面内容和优点将变得更加清楚和更易于理解，其中：
图1A至1F示出的是根据本发明实施例的制造无铅焊料凸块的过程的剖视图；以及
图2A和2B示出的是根据本发明的无铅焊料回流期间铜扩散入无铅焊料中的剖视图。
具体实施方式
下面将参考附图详细描述本发明的实施例，其中相同的标号指示相同的元件。然而，本发明可以以许多不同的形式实施，并且不应理解为局限于所述的实施例。提供本实施例只是为了使本发明的公开更充分、更完全，并且将本发明的概念更充分地传递给本领域普通技术人员。
图1A是半导体基片10的剖视图，其中半导体基片10具有带开放电极焊盘12的保护层14，图1B是UBM(底部凸起金属化)层20的剖视图，所述UBM层20形成在半导体基片上。UBM层20防止在焊料被电镀到由诸如铝等金属制成的电极焊盘12上之后回流焊料时电极焊盘12和焊料之间产生扩散。UBM层20还提供连接半导体基片10的所有区域的电通路，并且增强倒装片互连中电极焊盘12与焊料凸块34之间界面的粘合性。UBM层20的第一层16涂在半导体基片10上，并且包括钛(Ti)、钨(W)、铬(Cr)以及钛/钨(TiW)其中之一，第二层18涂在第一层16上，并且包括铜(Cu)、镍(Ni)、镍/钒(Ni-V)合金以及铜/镍(Cu-Ni)合金其中之一。UBM层20通过喷溅被依次形成，它需要与半导体基片10之间具有好的粘合性，并且在连续的形成过程中不能被损害。
如图1C所示，在UBM层20上光刻光刻胶30，除对应电极焊盘12的部分除外。此外，如图1D所示，铜层22形成在UBM20对应电极焊盘12的部分上。然后，焊料32电镀到铜层22上(参考图1E)，直接接触铜层22。焊料32包括锡作为主要成分。这时，铜层22的厚度范围在大约5μm到大约20μm之间。
接着，如图1F所示，光刻胶30被去除，使用焊料32作为掩模蚀刻UBM层20(未示出)。最后，焊料32被回流。图2A示出铜层22中的铜在焊料32回流过程中扩散到焊料32中，图2B示出通过铜扩散到焊料32中而形成锡-铜二元焊料凸块34。
在温度范围为大约230℃到大约270℃的有机溶剂中实施回流。当焊料32仅包括锡时，如果焊料32的回流温度高于232℃，即高于锡的熔点，则在UBM层20上形成层的铜层22中的铜扩散到锡焊料32中，同时焊料32中的锡扩散到铜层22中以在焊料32与铜层22之间的界面处形成铜-锡金属化合层，其中铜-锡金属化合层增强导电性能。回流之后预定量的铜留在焊料凸块34中。
焊料32也可以包括银，而锡作为主要成分，从而形成锡-银二元无铅合金，与锡-银-铜三元无铅合金相比，它的组分比率可以容易地被控制。因为根据本发明，通过对回流温度和时间量的调节可以控制铜到焊料32中的扩散量，因此可以用二元凸块制造过程代替具有高制造成本的三元凸块制造过程和困难的质量控制。
表1提供了焊料凸块34上部中的铜含量的分析结果，其中是在锡/3.5银合金被电镀到BM层20的各种结构上并且在各种温度和时间下实施回流过程之后使用能量分散X射线光谱(EDX，energy dispersive X-rayspectroscopy)进行分析的。如表1所示，在回流过程之后，在焊料凸块34中的铜含量根据热处理的条件在大约1.5％到3％的范围内。这些结果示出，在制造小尺寸(例如，小于大约150μm)无铅焊料凸块时，电镀过程中铜不需要被分别加入以便加入非常少量(大约1％)的铜。
表1。
回流锡/3.5银之后，在焊料凸块中的铜含量
在具有不同层的UBM上的焊料凸块
UBM类型  1分钟回流  20分钟回流  1分钟回流后1000小时热处理
TiW/Cu/电镀Cu  2.2+/-0.9  2.6+/-0.9  1.5+/-0.2
Cr/Cr-Cu/Cu  1.2+/-0.1  2.9+/-0.5  1.7+/-0.6
NiV/Cu  1.7+/-0.1  2.3+/-0.3  1.5+/-0.4
在限定氧含量的氮环境下的普通回流炉中，焊剂扩展，焊料凸块34可以熔化。焊料凸块34的回流可以在蚀刻UBM层20之前或之后实施。
通过以上结构，根据本发明，不需要制造用于二元和三元焊料合金的电镀溶液，通过UBM层20上的铜扩散入焊料32中就可以容易地控制包含在焊料凸块34中的组分比率。
如上所述，根据本发明，通过在焊料回流期间使铜在UBM上形成层来将铜扩散入焊料中，并且由此，仅通过使用一元或二元锡电镀就可以容易地制造二元或三元无铅焊料凸块。
这样，可以制造具有低制造成本并且电镀容易控制的无铅焊料凸块。
尽管对本发明的一些优选实施例进行了展示和描述，但本领域技术人员将会理解在不偏离本发明的原理和实质的情况下，可对这些实施例进行改变，其范围也落入本发明的权利要求及其等同物所限定的范围内。

Claims (18)

1.一种制造无铅焊料凸块的方法，包括：
提供基片，所述基片具有带开放电极焊盘的保护层；
在基片上形成UBM(底部凸起金属化)层；
在UBM层上光刻光刻胶，除UBM层对应电极焊盘的部分之外；
在UBM层对应电极焊盘的部分上形成铜层；
将焊料电镀在铜层上；
去除光刻胶；以及
使用焊料作为掩模蚀刻UBM层，并且回流焊料、制造焊料凸块。
2.根据权利要求1所述的制造无铅焊料凸块的方法，其特征在于，焊料包括锡。
3.根据权利要求2所述的制造无铅焊料凸块的方法，其特征在于，焊料进一步包括银。
4.根据权利要求1所述的制造无铅焊料凸块的方法，其特征在于，在大约230℃到大约270℃的温度下实施回流大约1分钟到大约20分钟。
5.根据权利要求1所述的制造无铅焊料凸块的方法，其特征在于，铜层的厚度范围为从大约5μm到大约20μm。
6.根据权利要求1所述的制造无铅焊料凸块的方法，其特征在于，UBM层包括涂到基片上的第一层和涂到第一层上的第二层，其中所述第一层具有钛(Ti)、钨(W)、铬(Cr)和钛/钨(TiW)其中之一，而第二层具有铜(Cu)、镍(Ni)、镍/钒(Ni-V)合金以及铜/镍(Cu-Ni)合金其中之一。
7.一种半导体基片的无铅焊料凸块，包括：
半导体基片；
形成在半导体基片上的电极焊盘；
形成在半导体基片上电极焊盘周围的保护层；
形成在电极焊盘和保护层上的底部凸起金属化层(UBM)；
形成在对应电极焊盘的UBM层上的铜层；以及
电镀在铜层上的焊料，
其中使用焊料作为掩模蚀刻UBM层，以及回流焊料以形成焊料凸块。
8.根据权利要求7所述的焊料凸块，其特征在于，UBM层防止在焊料回流时电极焊盘与焊料之间发生扩散，提供连接半导体基片所有区域的电通路，并且增加电极焊盘与焊料凸块之间的界面粘合性。
9.根据权利要求7所述的焊料凸块，其特征在于，焊料凸块是锡-铜二元焊料凸块，其通过在焊料回流时铜层中的铜扩散到焊料中而形成。
10.根据权利要求7所述的焊料凸块，其特征在于，焊料包括锡。
11.根据权利要求10所述的焊料凸块，其特征在于，进一步包括在焊料与铜层的界面处的铜-锡金属化合层，它是通过这样形成的：当焊料回流温度大于锡的熔点时，铜层中预定量的铜扩散到焊料中，并且同时焊料的锡扩散到铜层中。
12.根据权利要求10所述的焊料凸块，其特征在于，焊料进一步包括银，而锡作为焊料中主要的成分，从而形成锡-银二元无铅合金。
13.根据权利要求9所述的焊料凸块，其特征在于，通过调整焊料回流的温度和时间量来控制铜到焊料中的扩散量。
14.根据权利要求1所述的制造无铅焊料凸块的方法，其特征在于，在所述的蚀刻UBM层之前实施所述的回流焊料。
15.根据权利要求1所述的制造无铅焊料凸块的方法，其特征在于，在所述的蚀刻UBM层之后实施所述的焊料回流。
16.一种在具有电极焊盘的基片上制造无铅焊料凸块的方法，包括：
在基片上形成UBM(底部凸起金属化)层；
在UBM层对应电极焊盘的部分上形成铜层，并且将焊料电镀在铜层上；以及
回流焊料以形成焊料凸块。
17.根据权利要求16所述的制造无铅焊料凸块的方法，其特征在于，进一步包括：
在所述的在基片上形成UBM层之后，在UBM层上光刻光刻胶，除UBM层对应电极焊盘的部分以外；
在所述的将焊料电镀在铜层上之后，去除光刻胶；以及
在所述的去除光刻胶之后，使用焊料作为掩模蚀刻UBM层。
18.根据权利要求16所述的制造无铅焊料凸块的方法，其特征在于，进一步包括：
在所述的在基片上形成UBM层之后，在UBM层上光刻光刻胶，除UBM层对应电极焊盘的部分之外；
在所述的将焊料电镀在铜层上之后，去除光刻胶；以及
在所述的回流焊料以形成焊料凸块之后，使用焊料作为掩模蚀刻UBM层。
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