CN1508885A - 具有慢光载流子的阻挡层的高速光电二极管及其形成方法 - Google Patents
具有慢光载流子的阻挡层的高速光电二极管及其形成方法 Download PDFInfo
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- CN1508885A CN1508885A CNA2003101212837A CN200310121283A CN1508885A CN 1508885 A CN1508885 A CN 1508885A CN A2003101212837 A CNA2003101212837 A CN A2003101212837A CN 200310121283 A CN200310121283 A CN 200310121283A CN 1508885 A CN1508885 A CN 1508885A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (41)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/321,660 | 2002-12-18 | ||
US10/321,660 US7022544B2 (en) | 2002-12-18 | 2002-12-18 | High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1508885A true CN1508885A (zh) | 2004-06-30 |
CN1278431C CN1278431C (zh) | 2006-10-04 |
Family
ID=32592947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101212837A Expired - Fee Related CN1278431C (zh) | 2002-12-18 | 2003-12-17 | 具有慢光载流子的阻挡层的高速光电二极管及其形成方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7022544B2 (zh) |
JP (1) | JP3872473B2 (zh) |
KR (1) | KR100558803B1 (zh) |
CN (1) | CN1278431C (zh) |
TW (1) | TWI252591B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100463196C (zh) * | 2004-12-08 | 2009-02-18 | 三星电机株式会社 | 一种光检测器及其制造方法 |
WO2018103358A1 (zh) * | 2016-12-07 | 2018-06-14 | 同方威视技术股份有限公司 | 光电二极管器件及光电二极管探测器 |
CN110190149A (zh) * | 2019-06-13 | 2019-08-30 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测增益结构及其制造方法 |
CN110212044A (zh) * | 2019-06-13 | 2019-09-06 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测结构及其制造方法 |
Families Citing this family (24)
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TW571449B (en) * | 2002-12-23 | 2004-01-11 | Epistar Corp | Light-emitting device having micro-reflective structure |
WO2008051216A2 (en) * | 2005-10-25 | 2008-05-02 | The Curators Of The University Of Missouri | Micro-scale power source |
US20070170476A1 (en) * | 2006-01-20 | 2007-07-26 | Giziewicz Wojciech P | Lateral photodetectors with transparent electrodes |
US8044435B2 (en) | 2006-11-14 | 2011-10-25 | Lockheed Martin Corporation | Sub-pixel nBn detector |
US8022494B2 (en) * | 2007-01-31 | 2011-09-20 | Fujifilm Corporation | Photodetector and manufacturing method thereof |
US7795679B2 (en) * | 2008-07-24 | 2010-09-14 | International Business Machines Corporation | Device structures with a self-aligned damage layer and methods for forming such device structures |
CN102005414B (zh) * | 2009-08-28 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器像素、制造方法及图像捕获设备 |
US8502271B2 (en) * | 2009-10-23 | 2013-08-06 | Lockheed Martin Corporation | Barrier photodetector with planar top layer |
DE102010043822B4 (de) * | 2010-11-12 | 2014-02-13 | Namlab Ggmbh | Fotodiode und Fotodiodenfeld sowie Verfahren zu deren Betrieb |
CN102569472B (zh) * | 2012-01-09 | 2014-02-26 | 电子科技大学 | 一种硅光电池 |
US9425341B2 (en) | 2012-10-08 | 2016-08-23 | Agency For Science, Technology And Research | P-I-N photodiode with dopant diffusion barrier layer |
CN105556680B (zh) * | 2013-05-22 | 2017-12-22 | 王士原 | 微结构增强型吸收光敏装置 |
US11121271B2 (en) | 2013-05-22 | 2021-09-14 | W&WSens, Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10468543B2 (en) | 2013-05-22 | 2019-11-05 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10700225B2 (en) | 2013-05-22 | 2020-06-30 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US9530905B2 (en) | 2014-11-18 | 2016-12-27 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US10446700B2 (en) | 2013-05-22 | 2019-10-15 | W&Wsens Devices, Inc. | Microstructure enhanced absorption photosensitive devices |
US9444001B1 (en) | 2013-06-28 | 2016-09-13 | Hrl Laboratories, Llc | Low cost, high performance barrier-based position sensitive detector arrays |
WO2016077791A1 (en) | 2014-11-13 | 2016-05-19 | Artilux Inc. | Light absorption apparatus |
US9799689B2 (en) | 2014-11-13 | 2017-10-24 | Artilux Inc. | Light absorption apparatus |
US9515105B2 (en) | 2015-02-18 | 2016-12-06 | Semiconductor Components Industries, Llc | Dual photodiode image pixels with preferential blooming path |
US10529753B2 (en) * | 2015-11-03 | 2020-01-07 | Sensors Unlimited, Inc. | Pixels |
US20190305157A1 (en) * | 2018-04-02 | 2019-10-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Photodetector |
US11935969B2 (en) * | 2019-11-18 | 2024-03-19 | Epistar Corporation | Photodetector with modified region in barrier and absorption structures |
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US3990059A (en) * | 1975-04-03 | 1976-11-02 | Texas Instruments Incorporated | Magnetic bubble detector |
JPH0766981B2 (ja) * | 1987-03-26 | 1995-07-19 | 日本電気株式会社 | 赤外線センサ |
US5525828A (en) | 1991-10-31 | 1996-06-11 | International Business Machines Corporation | High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields |
JPH05145051A (ja) | 1991-11-18 | 1993-06-11 | Sanyo Electric Co Ltd | 光半導体装置 |
US5285078A (en) * | 1992-01-24 | 1994-02-08 | Nippon Steel Corporation | Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
US5318676A (en) * | 1992-06-22 | 1994-06-07 | The Regents Of The University Of California | Photolithographic fabrication of luminescent images on porous silicon structures |
DE4319413C2 (de) * | 1993-06-14 | 1999-06-10 | Forschungszentrum Juelich Gmbh | Interferenzfilter oder dielektrischer Spiegel |
JPH1065206A (ja) * | 1996-08-21 | 1998-03-06 | Fuji Xerox Co Ltd | 半導体受光素子の製造方法 |
JP3828982B2 (ja) | 1997-04-14 | 2006-10-04 | 三菱電機株式会社 | 半導体受光素子 |
EP0969524A1 (en) * | 1998-07-03 | 2000-01-05 | Isis Innovation Limited | Light emitter |
US6683367B1 (en) * | 1998-07-03 | 2004-01-27 | Imec Vzw | Thin-film opto-electronic device and a method of making it |
US6177289B1 (en) | 1998-12-04 | 2001-01-23 | International Business Machines Corporation | Lateral trench optical detectors |
JP3317942B2 (ja) | 1999-11-08 | 2002-08-26 | シャープ株式会社 | 半導体装置およびその製造方法 |
AUPR043900A0 (en) * | 2000-09-28 | 2000-10-26 | Australian National University, The | Method of disordering quantum well heterostructures by high energy ion irradiation |
JP2002203983A (ja) * | 2000-10-27 | 2002-07-19 | Oki Electric Ind Co Ltd | 受光素子 |
US6451702B1 (en) | 2001-02-16 | 2002-09-17 | International Business Machines Corporation | Methods for forming lateral trench optical detectors |
JP4465941B2 (ja) * | 2001-11-22 | 2010-05-26 | 富士ゼロックス株式会社 | 紫外線受光素子 |
JP2004103668A (ja) | 2002-09-05 | 2004-04-02 | Sharp Corp | 受光素子および回路内蔵受光素子 |
-
2002
- 2002-12-18 US US10/321,660 patent/US7022544B2/en not_active Expired - Lifetime
-
2003
- 2003-10-30 TW TW092130230A patent/TWI252591B/zh not_active IP Right Cessation
- 2003-11-17 KR KR1020030080971A patent/KR100558803B1/ko not_active IP Right Cessation
- 2003-12-11 JP JP2003413962A patent/JP3872473B2/ja not_active Expired - Fee Related
- 2003-12-17 CN CNB2003101212837A patent/CN1278431C/zh not_active Expired - Fee Related
-
2006
- 2006-01-11 US US11/329,185 patent/US7161220B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100463196C (zh) * | 2004-12-08 | 2009-02-18 | 三星电机株式会社 | 一种光检测器及其制造方法 |
WO2018103358A1 (zh) * | 2016-12-07 | 2018-06-14 | 同方威视技术股份有限公司 | 光电二极管器件及光电二极管探测器 |
US11011656B2 (en) | 2016-12-07 | 2021-05-18 | Nuctech Company Limited | Photodiode device and photodiode detector |
CN110190149A (zh) * | 2019-06-13 | 2019-08-30 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测增益结构及其制造方法 |
CN110212044A (zh) * | 2019-06-13 | 2019-09-06 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测结构及其制造方法 |
CN110190149B (zh) * | 2019-06-13 | 2021-04-27 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测增益结构 |
CN110212044B (zh) * | 2019-06-13 | 2021-07-20 | 中国电子科技集团公司第二十四研究所 | 一种深槽半导体光探测结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20040054490A (ko) | 2004-06-25 |
JP3872473B2 (ja) | 2007-01-24 |
US20040119093A1 (en) | 2004-06-24 |
JP2004200685A (ja) | 2004-07-15 |
US20060118894A1 (en) | 2006-06-08 |
KR100558803B1 (ko) | 2006-03-10 |
TWI252591B (en) | 2006-04-01 |
TW200419817A (en) | 2004-10-01 |
US7161220B2 (en) | 2007-01-09 |
CN1278431C (zh) | 2006-10-04 |
US7022544B2 (en) | 2006-04-04 |
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