CN1497686A - 生产氮化铝基片的方法 - Google Patents

生产氮化铝基片的方法 Download PDF

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CN1497686A
CN1497686A CNA031574750A CN03157475A CN1497686A CN 1497686 A CN1497686 A CN 1497686A CN A031574750 A CNA031574750 A CN A031574750A CN 03157475 A CN03157475 A CN 03157475A CN 1497686 A CN1497686 A CN 1497686A
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aln
substrate
aluminium nitride
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powder
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M・费拉托
M·费拉托
俣
A·珀蒂东
锶�
J·雅里热
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Alstom Transport SA
Alstom Transport Technologies SAS
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Abstract

一种生产氮化铝(AlN)基片的方法，其特征在于，该基片通过在高温下以高速将粉末喷射到载体上而获得，其中所述粉末包括包覆有一层氧化物前体的AlN颗粒，所述氧化物前体选自在喷射过程中在AlN颗粒周围产生形成液相的氧化物。

Description

生产氮化铝基片的方法
技术领域
本发明涉及一种生产氮化铝(AlN)基片的方法，特别涉及一种生产薄基片的方法。
背景技术
由于AlN基片具有电绝缘特性并且是热的良导体，因此被广泛用于支承功率电子元件。它们通常经烧结而成，并且可市购，出于机械强度和高温固化过程中的变形的原因，它们的最小厚度为0.635mm。这一厚度的AlN基片能够承受几十千伏的电压，适于高功率应用，如：铁路牵引。然而，0.635mm的厚度对于低电压应用，如电车而言则过厚，其中与承受电压必需的厚度相比，AlN基片的额外厚度从成本和热阻角度来讲不利。
发明概述
因此，本发明的目的是提出一种生产AlN基片的方法，特别是生产厚0.1-0.5mm的AlN基片的方法。
本发明提供一种生产氮化铝(AlN)基片的方法。根据本发明，该基片通过在高温下以高速将粉末喷射到载体上而获得，其中所述粉末包括包覆有一层氧化物前体的AlN颗粒，所述氧化物前体选自在喷射过程中在AlN颗粒周围产生形成液相的氧化物。
根据本发明的另一特征，所述粉末借助等离子炬来喷射。
根据本发明的又一特征，所述粉末借助于与氧乙炔炬联合的空气流来喷射。
根据本发明的再一特征，本发明的方法包括下列连续步骤：
-将氧化钇前体溶解在醇中，
-在剧烈搅拌下将精细的纯AlN粉末分散在前面所得的溶液中，
-将由此得到的悬浮液在惰性气氛中雾化，得到粒状粉末，以及
-将粉末喷射到载体上。
根据本发明的另一特征，所述氧化物是稀土氧化物。
根据本发明的又一特征，所述氧化物前体是氧化钇前体，并且雾化后所得的AlN粉末包括2-3重量％的氧化钇。
根据本发明的再一特征，所述氧化钇前体是溶解在异丙醇中的异丙酸钇。
根据本发明的再一特征，根据所需厚度，通过在载体上多次经过得到所述基片。
根据本发明的再一特征，所述载体是金属载体，并在AlN粉末喷射步骤过程中通过喷射压缩空气而被冷却。
根据本发明的再一特征，所述通过将AlN粉末喷射到载体上得到的AlN基片被低温退火，以消除载体与AlN陶瓷之间的残余应力。
从以下对以非限制性实施例方式给出的本发明的一个特定实施方案的描述中，将会更好地理解本发明的目的、特征和优点。
具体实施方式
在本发明方法的第一阶段，通过下列连续的步骤生产可借助等离子炬喷射的AlN粉末：
-在搅拌下将氧化钇(Y2O3)前体，如异丙酸钇或异丙醇钇溶解在异丙醇中，
-将粒径为约2-3μm的精细的纯AlN粉末分散在前一步骤所得的溶液中，得到含有2-3％氧化钇的等价物的AlN泥釉，通过研磨或通过剧烈搅拌，例如，借助涡轮，使用稳定剂或表面活性剂使得该悬浮液保持稳定直到雾化点，
-在惰性气氛下使用雾化器将前面所得的泥釉雾化，调节雾化器的温度和喷射速率使得所得的中空球在雾化器壁上不被压碎；这种雾化产生直径为40-150μm的呈粉末形式的中空球，该中空球由包覆有氧化钇前体薄层并通过雾化而凝集的AlN颗粒组成，
-任选将雾化的粉末筛分，以除去太细或太粗的级分，而只保留直径为50-100μm的中空AlN球。
在本发明方法的第二阶段，借助等离子炬将以上述方式得到的AlN粉末喷射到金属载体上，如：铝上，载体通过压缩空气喷射到对面而冷却，以保持约150℃的平衡温度。所述等离子炬，例如：可以是温度可高达15000K的等离子弧炬或者是温度为几千摄氏度的感应等离子炬。将AlN的球状颗粒以可变流速喷射到等离子体中，并以接近音速的速率部分熔融地到达冷却的金属载体，形成稍微致密的层。在该喷射阶段中，AlN颗粒通过氧化钇前体保护以免受氧化，该氧化钇前体在等离子体中分解得到氧化物并与AlN反应，产生钇铝石榴石(YAG)相。等离子炬在金属载体上的通过次数是AlN基片的表面积和所需厚度的函数，其中每一次通过沉积40-60μm的AlN，并且通过部分叠盖连续的扫描层而产生均一表面。
在本发明生产方法的变体中，粉末借助空气流通过氧乙炔炬焰来喷射，使得在高温下以高速将该粉末喷射到载体上。
为了促进热循环过程中AlN沉积物的附着，可在喷射AlN之前在金属载体上产生附加子层。在铝载体的情况下，例如：为了在成本和热阻方面不招致过分的代价，所述附加帐子层可以是通过阳极化得到的并且厚几微米的氧化物薄层。在铜载体的情况下，最好通过化学方法在载体镀镍并可稍微镀有铬。
在本发明方法的后续阶段中，将金属载体上的AlN基片有利地在低温下退火，以消除由于载体与AlN陶瓷之间的热膨胀系数差异产生的残余应力。
上述生产方法生产厚度可为0.1-0.5mmAlN基片，它能更好地用作低压应用中的电子元件。
为了改进以上述方式得到的AlN基片的表面粗糙度，例如：对于功率电子设备的应用，其中为了将半导体元件铜焊在AlN基片上而必须将陶瓷基片的表面镀上铜，AlN基片的表面可有利地通过受激准分子激光器活化，以使表面光滑，之后可将铜通过电解沉积在活化的区域。
当然，本发明决不限于所述和所示的实施方案，该实施方案仅仅是为了举例的目的。在不背离本发明保护范围的情况下，可以对其作出修改，尤其从各组分部分的组成的角度或通过替代技术等价物。
因此，在本发明方法的变体中，在制备AlN粉末阶段的第一步骤中，所用的氧化钇前体可以是溶解在四氢呋喃中的六氟乙酰丙酮化物。
因此，在本发明方法的其它实施方案中，所用氧化物前体可以是选自铈、钐、钙或镧系元素的氧化物的前体。例如，所选的氧化物前体可以是溶解在有机溶剂，如：四氢呋喃中的乙酰丙酮钐。

Claims (10)

1.一种生产氮化铝(AlN)基片的方法，其特征在于：该基片通过在高温下以高速将粉末喷射到载体上而获得，其中所述粉末包括包覆有一层氧化物前体的AlN颗粒，所述氧化物前体选自在喷射过程中在AlN颗粒周围产生形成液相的氧化物。
2.根据权利要求1的方法，其特征在于所述粉末借助等离子炬来喷射。
3.根据权利要求1的方法，其特征在于所述粉末借助与氧乙炔炬联合的空气流来喷射。
4.根据权利要求1-3中任意一项的生产氮化铝(AlN)基片的方法，其特征在于包括下列连续的步骤：
-将呈有机金属物质形式的氧化物前体溶解在有机溶剂中，
-在剧烈搅拌下将精细的纯AlN粉末分散在前面所得的溶液中，
-将由此得到的悬浮液在惰性气氛中雾化，得到粒状粉末，以及
-将粉末喷射到载体上。
5.根据权利要求1-4中任意一项的生产氮化铝(AlN)基片的方法，其特征在于所述氧化物是稀土氧化物。
6.根据权利要求4和5的生产氮化铝(AlN)基片的方法，其特征在于：所述氧化物前体是氧化钇前体，并且雾化后所得的AlN粉末包括2-3重量％氧化钇的等价物。
7.根据权利要求6的生产氮化铝(AlN)基片的方法，其特征在于所述氧化钇前体是溶解在异丙醇中的异丙酸钇。
8.根据权利要求1-7中任意一项的生产氮化铝(AlN)基片的方法，其特征在于：根据所需厚度，通过在载体上多次通过得到所述基片。
9.根据权利要求1-8中任意一项的生产氮化铝(AlN)基片的方法，其特征在于：所述载体是金属载体，并在AlN粉末喷射步骤过程中通过喷射压缩空气而被冷却。
10.根据权利要求1-9中任意一项的生产氮化铝(AlN)基片的方法，其特征在于：在低温下将通过AlN粉末喷射到载体上得到的AlN基片退火。
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