CN1471745A - 用于v频带tr模块的千米波功率调节方法和装置 - Google Patents
用于v频带tr模块的千米波功率调节方法和装置 Download PDFInfo
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- CN1471745A CN1471745A CNA018181813A CN01818181A CN1471745A CN 1471745 A CN1471745 A CN 1471745A CN A018181813 A CNA018181813 A CN A018181813A CN 01818181 A CN01818181 A CN 01818181A CN 1471745 A CN1471745 A CN 1471745A
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- 229910000679 solder Inorganic materials 0.000 description 10
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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Abstract
本发明涉及一种用于V频带TR模块的千米波功率调节方法。根据所述方法,检测输出功率,并利用一个调节电子系统通过衰减元件将其调节为恒定电平。本发明建议,在发送的情况下,当在60GHz及更高的频率范围内工作时,第一个SPDT(单极双掷)MMIC开关被用作可调衰减元件,而作为发送接收转换开关的第二个SPDT MMIC开关被用作输出功率检测器,在接收的情况下,这两个SPDT都用作开关。总的来说,用于整个TR模块的功率调节通过对芯片漏损和温度效应的补偿提高了模块的产量。将SPDT MMIC复用为开关、衰减元件和功率检测器节省了成本。
Description
本发明涉及一种如权利要求1的前序部分所述的用于V频带TR模块的千米波功率调节方法和装置。
输出功率,特别是在移动通信设备中的输出功率应该尽可能是恒定的,而与大批量生产的部件和装置各自的特性无关。当频率<50GHz时,可调衰减元件在带有PIN二极管的MMIC上实现,或者作为MESFET开关来实现。由现有技术还已知用于低频的其他功率调节方法。但是目前为止还不知道带有受控输出功率的V频带TR模块。目前在市场上买不到MMIC形式的60GHz的可调衰减元件。
单个地生产适用的设备成本很高,因此希望通过相应的设计来避免这一情况。同时所需要的附加组件应该尽可能的少,因为这一方面会造成个体漏损,另一方面会增加成本。
费特玛联合单片半导体公司S.A.S.,91401 Orsay Cedex France,提供了用于通信系统的50-60GHz的SPDT(单极双掷)开关,其类型编号为“CHS2190a”,它迄今为止已经作为发送接收转换开关应用在发送接收模块中。本发明的目的在于,通过应用这种开关或相应的开关,实现具有所述特征的功率调节。
根据本发明这一任务通过权利要求1或2的特征部分所述的特征来解决。
采用SPDT MMIC作为可调衰减元件可以产生所希望的发送功率,并可补偿芯片漏损。它构成了功率调节装置(调节器)的核心元件。由于芯片的双重功能而大大节省了费用。
总的来说,用于整个TR模块的功率调节通过对芯片漏损和温度效应的补偿提高了模块的产量。将SPDT MMIC复用为开关、衰减元件和功率检测器得到了所述的优点。
本发明的细节由从属权利要求和说明书中得到,其中借助于附图来说明一种实施例。如图所示:
图1是根据本发明的发送功率调节装置的框图;
图2是已知的SPDT MMIC的布线图和焊点标记;
图3是原理图;
图4是外部布线和DC电源;
图5是与控制电压相关的衰减关系;
图6是SPDT MMIC作为检测器的应用;
图7是最大可用发送功率和受控发送功率。
根据本发明,已知的MMIC既可以作为SPDT(单极双掷)类型的肖特基二极管开关来工作,也可以通过选择另外的电源电压作为可调衰减元件来工作。图2和图3表示了SPDT MMIC的布线图和原理图。在开关工作状态下,端口IN处的输入功率被接到端口O1或O2上。为了作为可变的衰减元件来工作,门O2无反射地断开,并且操作臂(Schaltarm)IN-O2工作在流通方向上。在门IN和O1之间,可变的衰减元件通过DC电源电压可以在3.5dB至25dB之间进行调节(参见图4和图5)。
图4表示了外部布线和DC电源。其工作类型如下:
开关工作:
操作臂IN-O1处于ON状态,操作臂IN-O2处于OFF状态:
焊点A1,A2:-2.5V
焊点B1,B2:12mA
OFF状态:操作臂截止
ON状态:操作臂接通
外部电压源通过将大约250欧姆的串联电阻串联到焊点A1、A2、B1、B2来得到。
检测器工作:
操作臂IN-O1作为检测器,操作臂IN-O2处于OFF状态:
焊点A1,A2:0V,(1千欧姆串联到焊点)
焊点B1,B2:12mA
作为可变的衰减元件工作:
操作臂IN-O1处于ON状态(门O1无反射地断开),
操作臂IN-O2以衰减状态工作:
焊点A1,A2:-2.5V
焊点BI,B2:0-12mA(在串联电阻为250欧姆时对应为0-4V)
在SPDT MMIC上,在每个操作臂上连接有两对二极管4/5或6/7。当SPDT MMIC作为功率检测器工作时,一个操作臂截止(例如IN-O2),第二个操作臂以0V偏压切换为接通状态。流经操作臂ON的高频(HF)功率在并联的二极管处被整流。可在焊点A1或A2处测得的整流电压是衡量流过的功率的一个标准,如图6所示。为了进行功率测量,在焊点A2处引出整流电压。对于3dBm<P<10dBm的电平,可以在SPDT MMIC上进行功率检测。
图5表示了与控制电压相关的衰减关系。其中适用下列值:
DC布线和电压源:
焊点A1,A2:-2.5V
焊点B1,B2:在250欧姆的串联电阻上施加的控制电压
HF配置:
在58GHz时在晶片探测器处测量
在门IN处的输入功率,在门O2处的输出功率,门O1通过10dB衰减元件被截止
图6表示了SPDT MMIC作为检测器的应用。图中检测器电压与测得的输出功率相关地进行表示。其中:
DC布线和电压源:
焊点A1,A2:通过1千欧姆串联电阻引入0V控制电压
焊点B1,B2:12mA
HF配置:
在58GHz时在晶片探测器处的测量
在门O1处的输入功率,在门IN处的输出功率,门O2通过10dB衰减元件被截止
通过所说明的元件得到了本发明所述的用于发送接收模块的发送功率调节装置,如图1的框图中所示。在接收的情况下,两个SPDTMMIC(1和2)用作开关。LO功率(Pin_LO)和接收功率(Pin_RX)接到混频器上。在发送的情况下,SPDT MMIC 1用作可调衰减元件,SPDT MMIC 2用作功率检测器。功率控制回路通过模拟电子系统连接而成。通过该电子系统处的额定值来调节所希望的输出电平。图7表示了在频谱分析仪上测得的在未调节情况下的输出功率(最大可用功率)和受控情况下的输出功率(Pout=5dBm=常数)。
Claims (4)
1.在50GHz及更高的频率范围下对V频带TR模块进行千米波功率调节的方法,其中发送和接收路径借助于两个SPDT(单极双掷)MMIC开关来隔离,其特征在于,在发送的情况下,第一个SPDTMMIC开关被用作可调衰减元件,第二个SPDT MMIC开关被用作输出功率检测器,并通过一个电子系统实现将输出功率调节到预先给定的电平。
2.在50GHz及更高的频率范围下对V频带TR模块进行千米波功率调节的装置,带有两个SPDT(单极双掷)MMIC开关,用于隔离发送和接收路径,其特征在于,在发送的情况下,第一个SPDTMMIC开关可用作可调衰减元件,第二个SPDT MMIC开关可用作输出功率检测器,并且为了进行调节设置了一个电子系统。
3.根据权利要求2所述的装置,其特征在于,当具有两个操作臂的SPDT MMIC处于开关工作状态下时,可以将端口IN处的输入功率以选择的方式接到端口O1或端口O2上,当作为可调衰减元件工作时,门O2无反射地断开,并且可以通过电源电压在门IN和O1之间对可变的衰减进行调节。
4.根据权利要求2所述的装置,其特征在于,当具有两个操作臂的SPDT MMIC在每个操作臂上,在高频功率和接地之间接有两对并联的二极管,并且作为功率检测器工作时,一个操作臂截止,而第二个操作臂以0V偏压切换为接通状态,流经后一个操作臂的高频功率在二极管处被整流,并且可测得的整流电压用作衡量流过功率的标准。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10060332A DE10060332B4 (de) | 2000-12-04 | 2000-12-04 | Verfahren und Vorrichtung zur Millimeterwellen-Leistungsregelung bei einem V-Band-TR-Modul |
DE10060332.7 | 2000-12-04 |
Publications (2)
Publication Number | Publication Date |
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CN1471745A true CN1471745A (zh) | 2004-01-28 |
CN1227770C CN1227770C (zh) | 2005-11-16 |
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CNB018181813A Expired - Fee Related CN1227770C (zh) | 2000-12-04 | 2001-11-09 | 用于v频带tr模块的千米波功率调节方法和装置 |
Country Status (18)
Country | Link |
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US (1) | US7012478B2 (zh) |
EP (1) | EP1342313B1 (zh) |
JP (1) | JP3822169B2 (zh) |
KR (1) | KR100779339B1 (zh) |
CN (1) | CN1227770C (zh) |
AT (1) | ATE458300T1 (zh) |
AU (2) | AU2155402A (zh) |
BR (1) | BR0115869A (zh) |
CA (1) | CA2430326C (zh) |
CZ (1) | CZ301316B6 (zh) |
DE (2) | DE10060332B4 (zh) |
ES (1) | ES2338406T3 (zh) |
HK (1) | HK1060442A1 (zh) |
HU (1) | HUP0302941A2 (zh) |
IL (2) | IL156147A0 (zh) |
NO (1) | NO326707B1 (zh) |
PL (1) | PL205863B1 (zh) |
WO (1) | WO2002047245A2 (zh) |
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TWI338970B (en) * | 2007-11-02 | 2011-03-11 | Univ Nat Taiwan | Single-pole-double-throw switch integrated with bandpass filtering function |
KR101301816B1 (ko) * | 2010-03-25 | 2013-08-29 | 한국전자통신연구원 | 증폭기 스위치로 동작하는 다기능 mmic |
CN111835372B (zh) * | 2019-04-18 | 2023-06-30 | 北京小米移动软件有限公司 | 一种射频电路及无线通信设备 |
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US3678414A (en) * | 1970-10-19 | 1972-07-18 | Collins Radio Co | Microstrip diode high isolation switch |
US4837530A (en) * | 1987-12-11 | 1989-06-06 | Hewlett-Packard Company | Wideband (DC-50 GHz) MMIC FET variable matched attenuator |
US4843354A (en) * | 1987-12-28 | 1989-06-27 | Motorola, Inc. | Broad band microwave biasing networks suitable for being provided in monolithic integrated circuit form |
US5103195A (en) * | 1989-10-13 | 1992-04-07 | Hewlett-Packard Company | Hybrid gaas mmic fet-pin diode switch |
JPH05103195A (ja) * | 1991-10-04 | 1993-04-23 | Matsushita Electric Ind Co Ltd | 画像入力装置 |
JP3362931B2 (ja) * | 1993-09-30 | 2003-01-07 | ソニー株式会社 | アツテネータ回路 |
JP3198808B2 (ja) * | 1994-06-30 | 2001-08-13 | 株式会社村田製作所 | 高周波スイッチ |
JPH09200021A (ja) * | 1996-01-22 | 1997-07-31 | Mitsubishi Electric Corp | 集積回路 |
US5777530A (en) * | 1996-01-31 | 1998-07-07 | Matsushita Electric Industrial Co., Ltd. | Switch attenuator |
US5990580A (en) * | 1998-03-05 | 1999-11-23 | The Whitaker Corporation | Single pole double throw switch |
US6801108B2 (en) * | 2001-12-14 | 2004-10-05 | Taiwan University | Millimeter-wave passive FET switch using impedance transformation networks |
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2000
- 2000-12-04 DE DE10060332A patent/DE10060332B4/de not_active Expired - Fee Related
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2001
- 2001-11-09 IL IL15614701A patent/IL156147A0/xx active IP Right Grant
- 2001-11-09 DE DE50115353T patent/DE50115353D1/de not_active Expired - Lifetime
- 2001-11-09 ES ES01270011T patent/ES2338406T3/es not_active Expired - Lifetime
- 2001-11-09 AT AT01270011T patent/ATE458300T1/de not_active IP Right Cessation
- 2001-11-09 WO PCT/DE2001/004215 patent/WO2002047245A2/de active IP Right Grant
- 2001-11-09 AU AU2155402A patent/AU2155402A/xx active Pending
- 2001-11-09 KR KR1020037006052A patent/KR100779339B1/ko not_active IP Right Cessation
- 2001-11-09 CZ CZ20031536A patent/CZ301316B6/cs not_active IP Right Cessation
- 2001-11-09 PL PL362025A patent/PL205863B1/pl not_active IP Right Cessation
- 2001-11-09 CN CNB018181813A patent/CN1227770C/zh not_active Expired - Fee Related
- 2001-11-09 EP EP01270011A patent/EP1342313B1/de not_active Expired - Lifetime
- 2001-11-09 CA CA002430326A patent/CA2430326C/en not_active Expired - Fee Related
- 2001-11-09 BR BR0115869-4A patent/BR0115869A/pt not_active IP Right Cessation
- 2001-11-09 US US10/433,464 patent/US7012478B2/en not_active Expired - Fee Related
- 2001-11-09 HU HU0302941A patent/HUP0302941A2/hu unknown
- 2001-11-09 AU AU2002221554A patent/AU2002221554B2/en not_active Ceased
- 2001-11-09 JP JP2002548851A patent/JP3822169B2/ja not_active Expired - Fee Related
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- 2003-05-27 IL IL156147A patent/IL156147A/en not_active IP Right Cessation
- 2003-05-30 NO NO20032468A patent/NO326707B1/no not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
WO2002047245A3 (de) | 2003-02-27 |
NO20032468L (no) | 2003-05-30 |
IL156147A (en) | 2008-06-05 |
DE10060332A1 (de) | 2002-07-11 |
CZ20031536A3 (cs) | 2004-03-17 |
KR20030061389A (ko) | 2003-07-18 |
EP1342313B1 (de) | 2010-02-17 |
KR100779339B1 (ko) | 2007-11-23 |
JP2004515185A (ja) | 2004-05-20 |
PL362025A1 (en) | 2004-10-18 |
CA2430326A1 (en) | 2002-06-13 |
PL205863B1 (pl) | 2010-06-30 |
JP3822169B2 (ja) | 2006-09-13 |
HUP0302941A2 (en) | 2003-12-29 |
CA2430326C (en) | 2009-07-28 |
IL156147A0 (en) | 2003-12-23 |
ATE458300T1 (de) | 2010-03-15 |
CZ301316B6 (cs) | 2010-01-13 |
NO20032468D0 (no) | 2003-05-30 |
BR0115869A (pt) | 2004-01-20 |
DE10060332B4 (de) | 2005-02-24 |
US20040110476A1 (en) | 2004-06-10 |
WO2002047245A2 (de) | 2002-06-13 |
DE50115353D1 (de) | 2010-04-01 |
NO326707B1 (no) | 2009-02-02 |
ES2338406T3 (es) | 2010-05-07 |
AU2155402A (en) | 2002-06-18 |
HK1060442A1 (en) | 2004-08-06 |
AU2002221554B2 (en) | 2006-02-23 |
CN1227770C (zh) | 2005-11-16 |
US7012478B2 (en) | 2006-03-14 |
EP1342313A2 (de) | 2003-09-10 |
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