CN1462073A - 用于包含各向异性半导体薄板的写一次存储器的二极管-和-熔丝存储元件 - Google Patents
用于包含各向异性半导体薄板的写一次存储器的二极管-和-熔丝存储元件 Download PDFInfo
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Abstract
交叉点二极管存储器的电子存储阵列(118)中采用的施予者/接受者-有机-结合薄板(606)。施予者/接受者-有机-结合薄板(606)关于电流的流动是各向异性的,而且在超过临界电流时物理上不稳定。因而,在二维存储阵列网格点上的行线(602)和列线(604)之间的施与者/接受者-有机-结合薄板(206)的volume充当二极管-熔丝存储元件的二极管部件(210)和熔丝部件(208)并与相邻网格点交叉之间的施予者/接受者-有机-结合薄板的相似volume在电子上绝缘。
Description
技术领域
本发明涉及存储器设备,尤其涉及采用各向异性半导体薄板作为熔丝-二极管存储元件二维阵列的交叉点二极管存储器设备。
发明背景
随着计算机处理器和数字数据存储设备在消费类电子设备中用得越来越普通,对大容量、低价格的数字存储设备的需求大大增加了。有些情况下,缺乏足够便宜、大容量的数字存储设备已经阻碍了需要在操作期间存储大量数字数据的消费类电子设备的销售。需要便宜、大容量的数字存储器的消费类电子设备的一个例子是高分辨率数码相机。虽然正在不断地流行,但数码相机对大众化的消费水平来说仍然显得过于昂贵。此外,可以制造出更高分辨率的数码相机,但高分辨率数码相机捕捉到的更高分辨率的图像对数字数据的存储需求进一步增加了它们的操作成本。
数字数据通常存储在旋转磁盘驱动器上或基于半导体的存储器中,例如EEPROM和闪存。磁盘驱动器昂贵、消耗大量的电能,而且对很多消费类设备来说不够安全。闪存更安全一些,但因为它们是用生产微处理器和其它半导体电子设备的照相平版印刷技术生产的,目前如果用在便宜的消费类电子设备或写一次消费应用(例如,存储由数码相机捕捉到的数字图像)中它们仍然显得过于昂贵。
最近,开发出了一种新的交叉点二级管存储器用作消费类电子设备(例如,数码相机)中的大容量写一次存储器。图1是一部分交叉点二级管存储器模块的切面立方图。交叉点二级管存储器模块包括多个相同的、堆积起来的层。图1中显示了层101-113。每层包括一个基片116,在基片上形成了二维存储阵列118。二维存储阵列包括行和列传导元件或导线,它们一起构成了一个网格状的模式。二维存储阵列的行线通过行多路复用器/多路分解器电路124电子耦合到输入/输出(“I/O”)导线120-123。列线通过列路复用器/多路分解器电路130耦合到列I/O导线126-129。行I/O导线120-123和列I/O导线126-129用接触单元进行电子连接,例如行I/O导线120连接到接触单元132,132沿着交叉点二极管存储器模块的边伸长以对存储器模块的所有层101-113的行I/O导线和列I/O导线进行电子互连。二维存储阵列118中行线和列线的每个网格点交叉代表一个二进制存储单元。注意,如下所述,行线并不在网格点交叉点上和列线有物理接触,但通过存储元件和列线耦合。可以通过在接触元件(例如,接触元件132)中产生适当的电流来电子访问每个存储元件进行读写。
图2描述了来自一层交叉点二极管存储设备的二维存储阵列的单个存储元件。在图2中,显示了行线202和列线204的一部分,列线204在行线202上与其正交。如上所述,行线202和列线204的交叉点对应于所存储的数字信息的一个位。在交叉点二极管存储器中,交叉行线和列线(例如图2中的行线202和列线204)是通过存储元件206进行耦合的。用电子术语来说,存储元件串联地包括熔丝208和二极管210。
数字二进制位(或位)可以是两个可能值“0”和“1”中的一个。在数字存储设备中存储数字数据的物理介质通常有两种能够互相反转的不同的物理状态并且可以通过物理信号被访问。在交叉点二极管存储元件(例如图2中的存储元件206)这种情况下,两个二进制状态中的一个由完整的熔丝208表示,另一个由熔断的熔丝208表示。和读/写存储器(例如,硬盘驱动器)不同,交叉点存储元件只能从熔丝-完整状态转换到熔丝-熔断状态一次,因此交叉点存储器通常都是写一次存储器。存储元件206的二极管210部件的作用是消除行线和列线间不合乎需要的电子通路。当存储元件206的熔丝部件208保持完整时,存储元件206的电阻相对较低,电流能够在行线202和列线204之间通过。为了把存储元件的状态从熔丝-完整状态转换到熔丝-熔断状态,需要用高得多的电流通过行线202和列线204之间的存储元件,导致熔丝部件208的电子故障。一旦熔丝部件208出现故障,存储元件206的电阻就相对变高了,只有相当小的电流甚至没有电流能够通过存储元件206从行线202传递到列线204。因而,可以通过高电流信号写交叉点二极管存储器的存储元件或把它的状态从熔丝-完整状态改变到熔丝-熔断状态,通过判断存储元件是否能够传递很低的电流信号可以确定存储元件的状态。
假如能够找到制造熔丝-二极管存储元件(例如,图2中所示的熔丝-二极管存储元件206)的便宜有效的技术,图1和图2中所示的交叉点二极管存储器模块可以用作消费类电子设备中的大容量、低价格的数字数据存储部件。因而,设计师和制造商、需要低价格、大容量的数字数据存储部件的消费类电子设备已经认识到对制造交叉点二极管存储元件的低廉且有效的方法的需要。
发明内容
本发明的一种实施方案提供了一种能够夹入在交叉点二极管存储层的二维存储阵列的行线和列线之间的各向异性半导体薄板。各向异性半导体材料由能够,一个在另一个上面,形成稳定薄膜或者能够共同分层的小分子有机化合物组成,以产生施予者/接受者-有机-结合设备。施予者/接受者-有机-结合设备其实质就是二极管。制造出的薄膜在与薄膜的平面垂直的方向上有相对较低的电阻系数,在薄膜平面上有相对较高的电阻系数,因而是各向异性的。因为半导体板关于电阻系数是各向异性的,存储元件就不需要用昂贵的照相制板技术来制造或相反地制造用来与行线和列线尺寸和方向对应,但相反地通过对存储器阵列网格结点的接近以各向异性施予者/接受者-有机-结合材料来制造的增加了。
各向异性半导体板在二维存储阵列的交叉行列线之间的一个方向上传递电流。当高电压或高电流信号通过列线和行线之间时,形成各向异性半导体板的小分子化合物蒸发,在通过高电流或高电压信号的行线和列线的交叉点上在各向异性半导体板中留下一个缝隙。一旦缝隙形成,相对较低的电流信号就不能在列线和行线之间通过,并且因此各向异性半导体板充当交叉点二极管存储元件的熔丝部件。由小分子有机化合物的薄膜组成的各向异性半导体板因此充当交叉点二极管存储设备的二维存储阵列的每个网格点上的熔丝-二极管存储元件阵列。
附图说明
图1是部分交叉点二极管存储模块的切面立方图。
图2描述来自交叉点二极管存储器的一层的二维存储阵列的单个存储元件。
图3-5描述施予者/接受者-有机-结合设备。
图6描述代表本发明的一种实施方案的单个存储元件。
图7沿着列线和行线之间较高电流的通路描述图6中所示的二维网格点交叉。
图8A描述铜酞菁的化学结构;图8B描述3,4,9,10-苝四羧酸-二苯并咪唑的化学结构。
具体实施方式
本发明的一种实施方案提供了一种包含小分子有机化合物的板状、各向异性的半导体材料,该小分子有机化合物被放置在二维交叉点二极管存储阵列的行线和列线之间来充当阵列中每个网格结点的熔丝-二极管存储元件。该各向异性半导体材料包括形成的或共同分层的由不同的小分子有机化合物组成的两层来提供施予者/接受者-有机-结合设备。由化学上分离的两层之间的分界面表示的施予者/接受者-有机-结合产生存储元件的二级管功能,并且容易蒸发,组成薄膜的小分子有机化合物提供存储元件的熔丝功能。因为半导体板是各向异性的并且电流通常不能流过半导体板的平面,因此可以在存储阵列网格的行线和列线之间夹入一个单独的各向异性半导体板来提供存储阵列网格的所有存储元件。
一个分子通过共价键包含结合在一起的原子,通常结合在分子范围内的两个或多个原子间共享的电子所占用的分子轨道。分子的电子以不连续的能级占据分子轨道,或者换句话说,占据量子化的能级状态或量子状态。在固体中,固体中相邻分子的分子轨道可以联合产生离域轨道,离域轨道允许固体内的离域分子轨道中的电子在固体中相对自由地移动。这种移动性允许占据了离域轨道的电子通过固携带电流。
可以用分子轨道电子能极的行为来解释有机二级管的运行。在0度时最高能级占据的分子轨道表示为HOMO,最低能级没有占据的分子轨道表示为LUMO。两种有机材料的施予者/接受者结合可以由图3中所示的能量图表示。施予者材料可以是铜酞菁(“CuPc”),接受者材料可以是3,4,9,10-苝四羧酸-二苯并咪唑(“PTCBI”)。在偏压下,能级倾斜,如图3和4所示。在图4中结合处是正向偏压。电子被从阴极402注入施予者的LUMO,由此注入接受者的LUMO并形成到阳极的电路。
图5显示反向偏压中的结合。这里电子被注入接受者的LUMO,并被能垒E 502阻止进入施予者的LUMO。因而施予者-接受者的动作和二极管类似,在正向偏压下自由地传递电流并在反向偏压下阻止电流通过。
熔丝是用来保护电路免受过大电流损坏的简单电子设备。在电路中插入熔丝以使当电流超过一定阈值时熔丝熔断,从而切断电路并防止在电路中出现超过阈值的电流。在电路断路器面板出现之前,简单的旋入式熔丝在家庭电路中是非常普遍的。这些家用熔丝拧入管套中并控制透过熔丝上的透明窗口能够看到的薄金属带中的电流。当家用电路中的电流超过阈值时,金属箔将被烧毁,断开电路,从而保护里面的家用电路免于损坏。
通过照相制版方法能够从基于硅的半导体材料形成图1和2中所示的二维存储阵列,用相同的方式可以制造出微芯片中的复杂电路。用这种方法,可以在阵列的每个网格点上把熔丝-二极管存储元件放在行线和列线之间。不幸的是,照相制版方法尽管对微处理器和RAM存储器来说很经济,因为微处理器和RAM存储器通常都在高端计算机和电子设备中被反复使用,但对写一次的消费性应用就显得过于昂贵,例如与存储底片上的模拟图像类似的存储数码相机中的数字图像。
本发明起于对能够在不需要昂贵的微制造技术的情况下用各向异性的施予者/接受者-有机材料的连续薄片充当交叉点二级管存储器的一层的整个二维存储阵列的认识。图6描述代表本发明的一种实施方案的单个存储元件。图6描述二维存储阵列中的行线602和列线604,如前面图2中所示。但是,代替不连续的、微制作的存储阵列元件(图2中的206),依照本发明的一种实施方案构造出的存储元件在行线602和列线604之间包含大量施予者/接受者-有机结合板。有机板包括相对于薄施予者层610而形成或分层的薄接受者层408。在图6所示的方向中,电流可以从列线604传递到行线602,但只有小的反向电流能够从行线602传递到列线604。因而,施予者/接受者-有机结合板606能够充当图2中所示的存储元件的二极管部件。
因为施予者/接受者-有机-结合板606在临界电流以上处于物理不稳定状态,施予者/接受者-有机-结合板还能充当图2中所示的存储元件的熔丝部件。图7沿着超出列线604和行线602之间的施与者/接受者有机-结合板的故障临界电流的电流的通路描述图6中所示的二维网格点交叉。高于临界值的电流已经在在行线602和列线604之间留下空区域或缝隙702的网格点交叉的邻近地方或其中蒸发了大量施与者/接受者-有机-结合板。缝隙处充满了空气,等价于在行线602和列线604之间插入电阻器。作为选择,施与者/接受者-有机-结合板层可以在高电压上的网格点交叉之间或在其中局部地分层,并等价地未能沿着分层传导电流。因而,图6和图7描述依照本发明的一种实施方案构造的二维阵列网络点上的存储元件的两个二进制状态,图6描述熔丝-完整状态,图7表示熔丝-熔断状态。熔丝-完整状态可以代表二进制值“1”,熔丝熔断状态可以代表二进制值“0”,或者用一种替代习惯,熔丝-完整状态代表二进制值“0”,熔丝-熔断状态代表二进制值“1”。
本发明的一种实施方案的施予者/接受者-有机-结合板需要的附加属性是它在与板的平面垂直的方向传导电流,但在与板的平面平行的方向传递很小的电流或不传导电流。这种电流携带的各向异性在不需要存储元件的微制作的情况下在每个二维存储阵列网格点上提供了电子上离散的存储元件。因为在与板的平面平行的方向上不传导电流,所以电流不能从一个活动网格点流经施予者/接受者-有机-结合板到一个不活动网格点并由此短路二维存储阵列。此外,当在一个网格点上采用强电流以在写操作期间烧断存储元件时,强电流不能在施予者/接受者-有机-结合板中横向流动来熔断其它网格点的存储元件熔丝。
因而,对上述在二维存储阵列中的应用来说施予者/接受者-有机-结合板必须有下列属性:(1)好的整流比例,或者换句话说,施予者/接受者-有机-结合板应该在与板的平面垂直的正方向中以非常低的电阻传导电流,但在相反方向上以非常高的电阻传导电流;(2)在比存储器读操作期间所施加的电压更高的电压上的物理不稳定性;(3)正方向上的低电阻或高电导率;(4)正方向上稳定的电阻或高电导率。另外,希望施予者/接受者-有机-结合板能够易于制造并满足预先确定的偏差,相对便宜,并且在低于或等存储器读操作期间所施加的电压上在物理上稳定,并且能够暴露在一定范围的温度下。
用作交叉点二极管存储器中的二维存储阵列的多个存储元件的连续施予者/接受者-有机-结合板可以制作成在接受者类型材料PTCBI的薄膜上分层或形成的施予者类型材料的薄膜,CuPc。图8A显示了CuPc的化学结构,图8B显示了PTCBI的化学结构。对本节前面讨论过的交叉点二极管存储器应用来说,包含CuPc层和PTCBI层的双层施予者/接受者-有机-结合板有必要的电流-流动各向异性和在高电流下的物理稳定性。能够依照本发明的用在交叉点二极管存储器中的施予者/接受者-有机-结合板的许多其它化学合成物也可以使用。每层由一种或多种小分子化合物组成的双层有机板是合适的,但也可以使用带有适当的各向相异和高电流不稳定性的多层施予者/接受者-有机-结合。例如,可以用许多取代酞菁或相关有机分子,例如紫菜碱、四苯并紫菜碱或四氮杂紫菜碱代替CuPc,也可以用适当取代苝或其它大的熔环分子,例如多种苝四羧酸氨基化合物和苝四羧二酰亚胺来代替PTCBI。
尽管已经通过特定的实施方案描述了本发明,但这并意味着限制本发明为这个实施方案。对本领域的技术人员来说在本发明思想范围内的更改都是显而易见的。例如,如上所述,任意有图2和4-5中所示的连续板存储元件应用所需要的电流携带各向异性和高电流物理不稳定性的单层、双层或多层施予者/接受者-有机-结合板都在本发明的范围内。注意,假如用本发明的连续施予者/接受者-有机-结合板用于多个二极管-熔丝存储元件,本发明可以用在图1中所示的交叉点二极管存储器设备中,但也可以用在有不同内部结构的写一次存储器设备中。
为了方便说明起见,以上描述使用特定的命名法来提供对本发明的完整理解。但是,对本领域的技术人员来说实现本发明并不需要特定的细节也是显而易见的。在其它实例中,以框图形式描述了众所周知的电路和设备以避免不必要的描述干扰真正的发明。因而,为说明和描述起见给出了本发明的特定实施方案的以上描述;它们并不意味着详尽无遗或限制本发明为所公开的准确形式,考虑到上述教义很明显也可能有很多更改和变动。选择并描述该实施方案是为了最好地解释本发明的原理和它的实际应用并由此使本领域的技术人员能够最好利用本发明和带有适用于所计划的特定应用的更改的不同实施方案。意思是本发明的范围由下列权利要求和它们的等价物来规定:
Claims (10)
1、一种连续的二极管薄板(606),用在电子存储阵列中,它连接二维存储阵列中的行线(602)到列线(604),电子存储器阵列的每个交叉行列线网格点上的二极管薄板的体(206)用作二极管-熔丝存储元件(208、210),包括半导体-结合薄板的连续二极管薄板:
正向偏压下在和二极管薄板垂直的方向上高电导率,但在反向偏压下有低电导率,由此构成一个二极管;
行线和列线之间通过大于临界电流时行线和列线之间的体减小,由此充当熔丝;并且
在与薄板平行的方向上阻挡电阻流过,以使电子存储器阵列的行列线网格点之间的二极管体与电子存储器阵列的其它行列线网格点之间的所有其它二极管薄板体在电子上相对隔离。
2、权利要求1的连续二极管薄板(606)包括由铜酞菁(610)薄膜组成的第一层和由3,4,9,10-苝四羧酸-二苯并咪唑(608)薄膜组成的第二层,第一层与第二层相结合。
3、一个包括权利要求1的连续二极管薄板(606)的电子存储器阵列包括:
一组实际上平行的导电行线(602);
一组实际上平行的导电列线(604);和
一组导电行线和一组导电列线之间的连续二极管薄板(606)有实际上与导电行线组和导电列线组平行的顶部和底部表面,在行列和列线的每个交叉点上的二极管薄板的局部体构成二极管-熔丝存储元件。
4、权利要求3的电子存储器阵列,其中二极管薄板的电阻是各向异性的,在与二极管薄板的顶部和底部表面垂直的方向上有低电阻,在相反方向上有以及和二级管薄板的顶部和底部表面平行的所有方向上有高电阻。
5、权利要求4的电子存储器阵列还包括与行线和列线耦合的能在外部访问的导电连接器(120-123,126-129)。
6、权利要求4的电子存储器阵列,其中每个二极管-熔丝存储元件(206、208、210)存储一个信息位。
7、权利要求6的电子存储器阵列,其中熔断的二极管-熔丝存储元件(702)代表位″1″,完整的二极管-熔丝存储元件代表位″0″。
8、权利要求6的电子存储器阵列,其中熔断的二极管-熔丝存储元件(702)代表位″0″,完整的二极管-熔丝存储元件代表位″1″。
9、一种构造二维存储阵列(118)的方法,该方法包括:
用第一组平行导线提供基片(116);
在第一组平行导线的顶部给施予者/接受者-有机-结合(606)分层,施予者/接受者-有机-结合薄板
在与薄板垂直的一个方向上传导电流,并由此充当二极管,
在行线(602)和列线(604)之间的体中物理不稳定,在行线和列线之间传递大于临界电流的电流,和
在与薄板平行的方向上阻挡电流流过,以使二维存储阵列(118)的行线和线列网格结点之间的施予者/接受者-有机-结合薄板材料(206)在电子上与二维存储阵列的其它行列线网格点之间的施予者/接受者-有机-结合薄板的所有其它体相对隔离;
在施予者/接受者-有机-结合薄板的顶部放置与第一组平行导线垂直的第二组平行导线;并提供与行线和列线耦合的从外部能够访问的导电连接顺(120-123、126-129)。
10、权利要求4的方法,其中施予者/接受者-有机-结合薄板(606)包括由铜酞菁(610)薄膜组成的第一层和由3,4,9,10-四羧酸-二苯并咪唑(608)薄膜组成的第二层,第一层与第二层相结合。
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2002
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- 2002-12-25 TW TW091137356A patent/TW200307293A/zh unknown
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- 2003-03-31 CN CNB031084168A patent/CN100375289C/zh not_active Expired - Fee Related
- 2003-05-16 EP EP03253060A patent/EP1367596A1/en not_active Withdrawn
- 2003-05-19 JP JP2003140244A patent/JP2004006877A/ja active Pending
- 2003-05-30 KR KR10-2003-0034764A patent/KR20030094054A/ko not_active Application Discontinuation
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CN101232039A (zh) | 2008-07-30 |
US6813182B2 (en) | 2004-11-02 |
CN100375289C (zh) | 2008-03-12 |
KR20030094054A (ko) | 2003-12-11 |
US20030223270A1 (en) | 2003-12-04 |
JP2004006877A (ja) | 2004-01-08 |
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