CN1452938A - X射线探测器 - Google Patents
X射线探测器 Download PDFInfo
- Publication number
- CN1452938A CN1452938A CN03110679A CN03110679A CN1452938A CN 1452938 A CN1452938 A CN 1452938A CN 03110679 A CN03110679 A CN 03110679A CN 03110679 A CN03110679 A CN 03110679A CN 1452938 A CN1452938 A CN 1452938A
- Authority
- CN
- China
- Prior art keywords
- ray detector
- ray
- detector according
- electrode
- alkali metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011669 selenium Substances 0.000 claims abstract description 45
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 27
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 27
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 24
- 239000011734 sodium Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 230000035945 sensitivity Effects 0.000 description 23
- 230000006866 deterioration Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000005264 electron capture Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IHBMMJGTJFPEQY-UHFFFAOYSA-N sulfanylidene(sulfanylidenestibanylsulfanyl)stibane Chemical compound S=[Sb]S[Sb]=S IHBMMJGTJFPEQY-UHFFFAOYSA-N 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002120678 | 2002-04-23 | ||
JP2002120678A JP4188619B2 (ja) | 2002-04-23 | 2002-04-23 | X線検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1452938A true CN1452938A (zh) | 2003-11-05 |
CN1256065C CN1256065C (zh) | 2006-05-17 |
Family
ID=28786766
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03110679XA Expired - Fee Related CN1256065C (zh) | 2002-04-23 | 2003-04-22 | X射线探测器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7554092B2 (zh) |
EP (1) | EP1357608B1 (zh) |
JP (1) | JP4188619B2 (zh) |
KR (1) | KR20030084610A (zh) |
CN (1) | CN1256065C (zh) |
CA (1) | CA2426204C (zh) |
DE (1) | DE60319905T2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102066975A (zh) * | 2008-06-26 | 2011-05-18 | 皇家飞利浦电子股份有限公司 | 信噪比改进的高动态范围x射线探测器 |
CN102369458A (zh) * | 2009-04-03 | 2012-03-07 | 株式会社岛津制作所 | 放射线检测器以及具备该放射线检测器的放射线摄影装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008078597A (ja) * | 2005-11-01 | 2008-04-03 | Fujifilm Corp | 放射線画像検出器 |
EP1780800A3 (en) * | 2005-11-01 | 2007-07-11 | Fujifilm Corporation | Photoconductive layer forming radiation image taking panel and radiation image taking panel |
EP1780802B1 (en) * | 2005-11-01 | 2012-03-28 | Fujifilm Corporation | X-ray radiation image detector based on amorphous selen |
JP5077921B2 (ja) * | 2005-11-21 | 2012-11-21 | 富士フイルム株式会社 | 放射線固体センサーおよびその製造方法 |
US7723692B2 (en) * | 2005-11-21 | 2010-05-25 | Fujifilm Corporation | Solid state radiation sensor and manufacturing method of the same |
JP2008227036A (ja) | 2007-03-12 | 2008-09-25 | Fujifilm Corp | 放射線平面検出器 |
JP2008227346A (ja) * | 2007-03-15 | 2008-09-25 | Fujifilm Corp | 放射線検出装置 |
EP1978563A3 (en) * | 2007-03-23 | 2012-10-24 | FUJIFILM Corporation | Radiation detector and method for producing photoconductive layer for recording thereof |
JP5070130B2 (ja) * | 2008-05-26 | 2012-11-07 | 富士フイルム株式会社 | 放射線検出器 |
GB2503606B (en) * | 2011-04-06 | 2018-04-04 | Int Crystal Laboratories | Radiation detector |
CN104795419B (zh) | 2015-05-11 | 2018-05-08 | 京东方科技集团股份有限公司 | X射线平板探测器 |
US10547015B2 (en) | 2016-12-02 | 2020-01-28 | The Research Foundation For The State University Of New York | Fabrication method for fused multi-layer amorphous selenium sensor |
CN112040868A (zh) | 2018-05-14 | 2020-12-04 | 深圳帧观德芯科技有限公司 | 用于对前列腺进行成像的装置 |
CN109888051B (zh) * | 2019-03-08 | 2020-11-27 | 中国科学院物理研究所 | 一种x射线探测器及其制造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US65496A (en) * | 1867-06-04 | William e | ||
US3576987A (en) * | 1968-11-07 | 1971-05-04 | American Cyanamid Co | Chemical lighting device to store, initiate and display chemical light |
DE4227096A1 (de) * | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | Röntgenbilddetektor |
US5551946A (en) * | 1994-05-17 | 1996-09-03 | Bullard; James R. | Multifunctional intubating guide stylet and laryngoscope |
US5676635A (en) * | 1995-08-30 | 1997-10-14 | Levin; Bruce | Instrument for insertion of an endotracheal tube |
WO1997010616A1 (en) * | 1995-09-12 | 1997-03-20 | Philips Electronics N.V. | X-ray image sensor |
WO1997031669A1 (en) * | 1996-02-28 | 1997-09-04 | Islava Steven T | Adjustable endotracheal tube holder |
CA2184667C (en) * | 1996-09-03 | 2000-06-20 | Bradley Trent Polischuk | Multilayer plate for x-ray imaging and method of producing same |
JP4059463B2 (ja) * | 1998-12-10 | 2008-03-12 | 株式会社島津製作所 | 放射線検出装置 |
EP1136888B1 (en) * | 2000-03-22 | 2012-01-18 | FUJIFILM Corporation | Image recording medium and method of manufacturing an image recording medium |
JP3678162B2 (ja) * | 2001-04-12 | 2005-08-03 | 株式会社島津製作所 | 放射線検出装置 |
JP3932857B2 (ja) * | 2001-10-22 | 2007-06-20 | 株式会社島津製作所 | 放射線検出装置 |
JP2005101193A (ja) * | 2003-09-24 | 2005-04-14 | Shimadzu Corp | 放射線検出器 |
-
2002
- 2002-04-23 JP JP2002120678A patent/JP4188619B2/ja not_active Expired - Lifetime
-
2003
- 2003-04-14 DE DE60319905T patent/DE60319905T2/de not_active Expired - Lifetime
- 2003-04-14 EP EP03008575A patent/EP1357608B1/en not_active Expired - Lifetime
- 2003-04-17 US US10/417,149 patent/US7554092B2/en active Active
- 2003-04-17 KR KR10-2003-0024268A patent/KR20030084610A/ko not_active Application Discontinuation
- 2003-04-22 CA CA2426204A patent/CA2426204C/en not_active Expired - Lifetime
- 2003-04-22 CN CNB03110679XA patent/CN1256065C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102066975A (zh) * | 2008-06-26 | 2011-05-18 | 皇家飞利浦电子股份有限公司 | 信噪比改进的高动态范围x射线探测器 |
CN102066975B (zh) * | 2008-06-26 | 2016-03-23 | 皇家飞利浦电子股份有限公司 | 信噪比改进的高动态范围x射线探测器 |
CN102369458A (zh) * | 2009-04-03 | 2012-03-07 | 株式会社岛津制作所 | 放射线检测器以及具备该放射线检测器的放射线摄影装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20030084610A (ko) | 2003-11-01 |
EP1357608A3 (en) | 2003-12-03 |
JP2003315464A (ja) | 2003-11-06 |
US20030223534A1 (en) | 2003-12-04 |
JP4188619B2 (ja) | 2008-11-26 |
CN1256065C (zh) | 2006-05-17 |
CA2426204A1 (en) | 2003-10-23 |
EP1357608A2 (en) | 2003-10-29 |
DE60319905D1 (de) | 2008-05-08 |
CA2426204C (en) | 2012-07-10 |
US7554092B2 (en) | 2009-06-30 |
EP1357608B1 (en) | 2008-03-26 |
DE60319905T2 (de) | 2009-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHIMADZU SCISAKUSHO LTD.; SHINDENMOTO INDUSTRY CO Free format text: FORMER OWNER: SHIMADZU SCISAKUSHO LTD.; SHINDENMOTO INDUSTRY CO LTD; YAMANASHI ELECTRONICS INDUSTRY CO., LTD. Effective date: 20061020 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20061020 Address after: Kyoto Prefecture Co-patentee after: Shindengen Industrial Co., Ltd. Patentee after: Shimadzu Corp. Co-patentee after: Shindengen induction device Co. Address before: Kyoto Prefecture Co-patentee before: Shindengen Industrial Co., Ltd. Patentee before: Shimadzu Corp. Co-patentee before: Shindengen Electric Manufacturing Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: SHINDENGEN INDUSTRIAL CO., LTD. KYOWA MACHINERY CO., LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20101213 Address after: Kyoto Prefecture Patentee after: Shimadzu Corp. Address before: Kyoto Prefecture Co-patentee before: Shindengen Industrial Co., Ltd. Patentee before: Shimadzu Corp. Co-patentee before: Shindengen induction device Co. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060517 Termination date: 20160422 |
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CF01 | Termination of patent right due to non-payment of annual fee |