DE60319905D1 - Röntgenstrahlungsdetektor - Google Patents

Röntgenstrahlungsdetektor

Info

Publication number
DE60319905D1
DE60319905D1 DE60319905T DE60319905T DE60319905D1 DE 60319905 D1 DE60319905 D1 DE 60319905D1 DE 60319905 T DE60319905 T DE 60319905T DE 60319905 T DE60319905 T DE 60319905T DE 60319905 D1 DE60319905 D1 DE 60319905D1
Authority
DE
Germany
Prior art keywords
ray detector
ray
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60319905T
Other languages
English (en)
Other versions
DE60319905T2 (de
Inventor
Kenji Sato
Toshiyuki Sato
Takayuki Nakayama
Yoichiro Shimura
Kazuhiko Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Shindengen Electric Manufacturing Co Ltd
Shindengen Sensor Device Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shindengen Electric Manufacturing Co Ltd, Shindengen Sensor Device Co Ltd filed Critical Shimadzu Corp
Application granted granted Critical
Publication of DE60319905D1 publication Critical patent/DE60319905D1/de
Publication of DE60319905T2 publication Critical patent/DE60319905T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE60319905T 2002-04-23 2003-04-14 Röntgenstrahlungsdetektor Expired - Lifetime DE60319905T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002120678 2002-04-23
JP2002120678A JP4188619B2 (ja) 2002-04-23 2002-04-23 Ｘ線検出器

Publications (2)

Publication Number Publication Date
DE60319905D1 true DE60319905D1 (de) 2008-05-08
DE60319905T2 DE60319905T2 (de) 2009-08-13

Family

ID=28786766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60319905T Expired - Lifetime DE60319905T2 (de) 2002-04-23 2003-04-14 Röntgenstrahlungsdetektor

Country Status (7)

Country Link
US (1) US7554092B2 (de)
EP (1) EP1357608B1 (de)
JP (1) JP4188619B2 (de)
KR (1) KR20030084610A (de)
CN (1) CN1256065C (de)
CA (1) CA2426204C (de)
DE (1) DE60319905T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1780802B1 (de) * 2005-11-01 2012-03-28 Fujifilm Corporation Röntgenstrahlungsbilddetektor basierend auf Selen
EP1780800A3 (de) * 2005-11-01 2007-07-11 Fujifilm Corporation Strahlungsbildtafel bildende Fotoleiterschicht und Strahlungsbildtafel
JP2008078597A (ja) * 2005-11-01 2008-04-03 Fujifilm Corp 放射線画像検出器
US7723692B2 (en) * 2005-11-21 2010-05-25 Fujifilm Corporation Solid state radiation sensor and manufacturing method of the same
JP5077921B2 (ja) * 2005-11-21 2012-11-21 富士フイルム株式会社 放射線固体センサーおよびその製造方法
JP2008227036A (ja) * 2007-03-12 2008-09-25 Fujifilm Corp 放射線平面検出器
JP2008227346A (ja) * 2007-03-15 2008-09-25 Fujifilm Corp 放射線検出装置
EP1978563A3 (de) * 2007-03-23 2012-10-24 FUJIFILM Corporation Strahlungsdetektor und Verfahren zur Herstellung einer lichtleitenden Schicht zur Aufzeichnung damit
JP5070130B2 (ja) * 2008-05-26 2012-11-07 富士フイルム株式会社 放射線検出器
RU2509321C2 (ru) * 2008-06-26 2014-03-10 Трикселль Детектор рентгеновского излучения с широким динамическим диапазоном и улучшенным отношением сигнал - шум
US8466534B2 (en) * 2009-04-03 2013-06-18 Shimadzu Corporation Radiation detector, and a radiographic apparatus having the same
GB2503606B (en) * 2011-04-06 2018-04-04 Int Crystal Laboratories Radiation detector
CN104795419B (zh) 2015-05-11 2018-05-08 京东方科技集团股份有限公司 X射线平板探测器
CN110582854B (zh) * 2016-12-02 2023-03-14 纽约州州立大学研究基金会 用于熔融的多层非晶硒传感器的制造方法
CN112040868A (zh) 2018-05-14 2020-12-04 深圳帧观德芯科技有限公司 用于对前列腺进行成像的装置
CN109888051B (zh) * 2019-03-08 2020-11-27 中国科学院物理研究所 一种x射线探测器及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US65496A (en) * 1867-06-04 William e
US3576987A (en) * 1968-11-07 1971-05-04 American Cyanamid Co Chemical lighting device to store, initiate and display chemical light
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
US5551946A (en) * 1994-05-17 1996-09-03 Bullard; James R. Multifunctional intubating guide stylet and laryngoscope
US5676635A (en) * 1995-08-30 1997-10-14 Levin; Bruce Instrument for insertion of an endotracheal tube
WO1997010616A1 (en) * 1995-09-12 1997-03-20 Philips Electronics N.V. X-ray image sensor
US6067985A (en) * 1996-02-28 2000-05-30 Islava; Steven T. Adjustable endotracheal tube holder
CA2184667C (en) * 1996-09-03 2000-06-20 Bradley Trent Polischuk Multilayer plate for x-ray imaging and method of producing same
JP4059463B2 (ja) * 1998-12-10 2008-03-12 株式会社島津製作所 放射線検出装置
US6774385B2 (en) * 2000-03-22 2004-08-10 Fuji Photo Film Co., Ltd. Image recording medium and method of manufacturing the same
JP3678162B2 (ja) * 2001-04-12 2005-08-03 株式会社島津製作所 放射線検出装置
JP3932857B2 (ja) * 2001-10-22 2007-06-20 株式会社島津製作所 放射線検出装置
JP2005101193A (ja) * 2003-09-24 2005-04-14 Shimadzu Corp 放射線検出器

Also Published As

Publication number Publication date
EP1357608B1 (de) 2008-03-26
EP1357608A3 (de) 2003-12-03
DE60319905T2 (de) 2009-08-13
KR20030084610A (ko) 2003-11-01
CA2426204A1 (en) 2003-10-23
US7554092B2 (en) 2009-06-30
EP1357608A2 (de) 2003-10-29
JP4188619B2 (ja) 2008-11-26
JP2003315464A (ja) 2003-11-06
US20030223534A1 (en) 2003-12-04
CN1452938A (zh) 2003-11-05
CA2426204C (en) 2012-07-10
CN1256065C (zh) 2006-05-17

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