FI20021255A - Suoraan konversioon perustuva kuvaava röntgendetektori - Google Patents

Suoraan konversioon perustuva kuvaava röntgendetektori

Info

Publication number
FI20021255A
FI20021255A FI20021255A FI20021255A FI20021255A FI 20021255 A FI20021255 A FI 20021255A FI 20021255 A FI20021255 A FI 20021255A FI 20021255 A FI20021255 A FI 20021255A FI 20021255 A FI20021255 A FI 20021255A
Authority
FI
Finland
Prior art keywords
direct
ray
detector based
conversion
direct conversion
Prior art date
Application number
FI20021255A
Other languages
English (en)
Swedish (sv)
Other versions
FI20021255A0 (fi
Inventor
Heikki Sipilae
Jacques Bourgoin
Original Assignee
Metorex Internat Oy
Jacques Bourgoin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metorex Internat Oy, Jacques Bourgoin filed Critical Metorex Internat Oy
Priority to FI20021255A priority Critical patent/FI20021255A/fi
Publication of FI20021255A0 publication Critical patent/FI20021255A0/fi
Priority to US10/458,910 priority patent/US6933503B2/en
Priority to EP03396063A priority patent/EP1376105A3/en
Priority to JP2003182064A priority patent/JP2004080010A/ja
Publication of FI20021255A publication Critical patent/FI20021255A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
FI20021255A 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori FI20021255A (fi)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20021255A FI20021255A (fi) 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori
US10/458,910 US6933503B2 (en) 2002-06-27 2003-06-11 Imaging X-ray detector based on direct conversion
EP03396063A EP1376105A3 (en) 2002-06-27 2003-06-23 Method and apparatus for X-ray imaging
JP2003182064A JP2004080010A (ja) 2002-06-27 2003-06-26 直接変換に基づく画像化ｘ線検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20021255A FI20021255A (fi) 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori

Publications (2)

Publication Number Publication Date
FI20021255A0 FI20021255A0 (fi) 2002-06-27
FI20021255A true FI20021255A (fi) 2003-12-28

Family

ID=8564239

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20021255A FI20021255A (fi) 2002-06-27 2002-06-27 Suoraan konversioon perustuva kuvaava röntgendetektori

Country Status (4)

Country Link
US (1) US6933503B2 (fi)
EP (1) EP1376105A3 (fi)
JP (1) JP2004080010A (fi)
FI (1) FI20021255A (fi)

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JP4153783B2 (ja) * 2002-12-09 2008-09-24 株式会社東芝 Ｘ線平面検出器
US7202511B2 (en) * 2003-08-21 2007-04-10 Drs Sensors & Targeting Systems, Inc. Near-infrared visible light photon counter
US7403594B2 (en) * 2004-03-31 2008-07-22 Canon Kabushiki Kaisha Radiation imaging apparatus and control method therefor
US20060033029A1 (en) * 2004-08-13 2006-02-16 V-Target Technologies Ltd. Low-voltage, solid-state, ionizing-radiation detector
US7505554B2 (en) * 2005-07-25 2009-03-17 Digimd Corporation Apparatus and methods of an X-ray and tomosynthesis and dual spectra machine
JP4618376B2 (ja) * 2006-04-20 2011-01-26 日本電気株式会社 通信装置及び通信装置の空冷方法
EP2527852A3 (en) 2006-08-01 2014-08-20 Washington University Multifunctional nanoscopy for imaging cells
US20080037703A1 (en) * 2006-08-09 2008-02-14 Digimd Corporation Three dimensional breast imaging
JP2008151768A (ja) * 2006-11-22 2008-07-03 Konica Minolta Medical & Graphic Inc 放射線用シンチレータパネル、放射線用シンチレータパネルの製造方法、及び放射線画像撮影装置
US8237126B2 (en) * 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
GB0802088D0 (en) 2008-02-05 2008-03-12 Panalytical Bv Imaging detector
EP2088451B1 (en) * 2008-02-05 2016-01-06 PANalytical B.V. Imaging detector
WO2010011859A2 (en) * 2008-07-24 2010-01-28 The Regents Of The University Of California Layered semiconductor neutron detectors
EP2430475A1 (en) 2009-05-14 2012-03-21 Devicor Medical Products, Inc. Stacked crystal array for detection of photon emissions
EP2522026A4 (en) * 2010-01-08 2017-05-03 Washington University Method and apparatus for high resolution photon detection based on extraordinary optoconductance (eoc) effects
US8310021B2 (en) 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
US9018589B2 (en) * 2010-12-07 2015-04-28 Koninklijke Philips N.V. Direct conversion X-ray detector
FR2969918B1 (fr) * 2010-12-29 2013-12-13 Gen Electric Procede et dispositif de mise en oeuvre d'une grille anti-diffusante
DE102011003454A1 (de) * 2011-02-01 2012-08-02 Siemens Aktiengesellschaft Strahlungsdirektkonverter, Strahlungsdetektor, medizintechnisches Gerät und Verfahren zum Erzeugen eines Strahlungsdirektkonverters
ES2478090T3 (es) * 2011-06-10 2014-07-18 Outotec Oyj Tubo de rayos X y analizador de fluorescencia de rayos X que utiliza radiación de excitación selectiva
EP2739993A4 (en) * 2011-06-16 2015-05-20 Forstgarten Internat Holding Gmbh RADIOLOGICAL IMAGE SENSOR
DE102011083424B3 (de) * 2011-09-26 2013-01-17 Siemens Ag Röntgenstrahlungsdetektor zur Verwendung in einem CT-System
DE102011089776B4 (de) * 2011-12-23 2015-04-09 Siemens Aktiengesellschaft Detektorelement, Strahlungsdetektor, medizinisches Gerät und Verfahren zum Erzeugen eines solchen Detektorelements
RU2593433C1 (ru) * 2015-05-25 2016-08-10 Объединенный Институт Ядерных Исследований Способ и устройство для измерения профиля нейтронного пучка (пучков)
US10114129B2 (en) * 2016-01-28 2018-10-30 The Research Foundation For The State University Of New York Semiconductor detector for x-ray single-photon detection
WO2018053774A1 (en) 2016-09-23 2018-03-29 Shenzhen Xpectvision Technology Co.,Ltd. Packaging of semiconductor x-ray detectors
CN107015263B (zh) * 2017-04-09 2019-11-15 东北大学 一种同基质的“闪烁体-半导体-闪烁体”复合x射线探测器
WO2020142976A1 (en) 2019-01-10 2020-07-16 Shenzhen Xpectvision Technology Co., Ltd. X-ray detectors based on an epitaxial layer and methods of making

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer
CA1179071A (en) * 1981-06-17 1984-12-04 Tadashi Fukuzawa Semiconductor device
FR2689684B1 (fr) * 1992-04-01 1994-05-13 Commissariat A Energie Atomique Dispositif de micro-imagerie de rayonnements ionisants.
JPH05315366A (ja) * 1992-05-11 1993-11-26 Fujitsu Ltd 半導体装置
US5596200A (en) * 1992-10-14 1997-01-21 Primex Low dose mammography system
DE4344252A1 (de) 1993-12-23 1995-06-29 Siemens Ag Röntgendetektorelement mit Direktkonversion
GB2318411B (en) 1996-10-15 1999-03-10 Simage Oy Imaging device for imaging radiation
JPH10290023A (ja) * 1997-04-15 1998-10-27 Nec Corp 半導体光検出器
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
US8039882B2 (en) * 2003-08-22 2011-10-18 Micron Technology, Inc. High gain, low noise photodiode for image sensors and method of formation

Also Published As

Publication number Publication date
US6933503B2 (en) 2005-08-23
JP2004080010A (ja) 2004-03-11
EP1376105A3 (en) 2006-04-05
US20040007671A1 (en) 2004-01-15
EP1376105A2 (en) 2004-01-02
FI20021255A0 (fi) 2002-06-27

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Legal Events

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