CN109686747A - 一种成像传感器及其基板结构 - Google Patents
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Abstract
本发明公开了一种新型成像传感器及其基板结构，该器件核心基板包含一层有源矩阵基板层、一层光电探测器层、一层闪烁体层。有源矩阵基板上由一个个像素区域以及外围电路组成，本发明通过改进闪烁体层的结构，使成像探测器接收到的射线能准确无误的进入到相对应的探测器像素内，提高成像探测器的精准性。
Description
技术领域
本发明涉及一种新型成像传感器及其基板结构，具体地说是优化闪烁体层的结构，属于光电技术领域。其优选地用于医疗诊断、工业无损检查以及公共安全检查等领域。本发明中的放射线包括X射线、α射线、β射线、γ射线等。
背景技术
近年来，随着技术的进步以及成本的降低，由半导体材料制成的平板检测器的X光影像装置在医疗、工业无损检测、公共安全等领域应用越来越广。在使用间接能量转换的技术中，X光射线经过闪烁体层转换为可见光，可见光再经过光电转换层，产生电荷积累到有源矩阵基板上，并进行读取。如果是直接能量转换方式的话，X射线经过光电转换层，直接产生电子，聚集到有源矩阵基板上。
实际使用的有源矩阵基板通常为非晶硅、金属氧化物薄膜晶体管(TFT)或者互补金属氧化物(CMOS)技术。因为非晶硅的电子迁移率较低，所以为了获得较大的量子探测效率(DQE)，基于非晶TFT的有源矩阵的像素比较大，通常在100-150um左右。而基于金属氧化物和CMOS的半导体的电子迁移率是非晶硅的10-400倍，所以像素大小可以做到75um以下，用于更精细的探测。
X射线经过闪烁体层转换为可见光，可见光进入光电探测层以后，形成电荷。通常闪烁体材料由连续排列的针状碘化铯晶体构成，针柱的直径约6微米，外表面由重元素铊包裹以形成可见光波导减少漫反射。
发明内容
一种新型成像传感器基板，含有一层有源矩阵基板层、一层光电探测器层、一层闪烁体层，射线经过闪烁体层转化为可见光，可见光再通过光电探测层转化为电子，有源矩阵基板层通过像素对电子进行信号处理；相对应的，在闪烁体层上也有像素互相间隔开并且和有源矩阵基板上的像素一一对应。
优选地，所述闪烁体层上的像素尺寸在200um以内，通过蒸镀或者印刷等工艺生长而成，为针状晶体结构，闪烁体的厚度为小于500um，闪烁体的厚度和产品的设计要求相关。
优选地，所述光电探测层的材料为非晶硅(a-Si)、钙钛矿、铜铟镓硒(CIGS)、碲化镉(CdTe)等。
优选地，所述有源矩阵基板可以为单晶硅、非晶硅、低温多晶硅、金属氧化物、有机半导体等材料。
优选地，所述闪烁体可以为无机或者有机材料，通过间接能量转换，把放射线转化为可见光，材料通常为碘化铯(CSI)、碘化钠、硫化锌、非晶硒等。
优选地，所述的闪烁体上的像素通过挡墙、黑色矩阵、铅化合物等无机、有机等材料分开，防止X射线进入其他区域。
优选地，所述的闪烁体上的像素大小、形状和有源矩阵像素开口的形状、大小相对应，确保X射线转换的电子可以完整的流入有源矩阵。
通过本发明改进闪烁体层的结构，通过在像素之间增加屏蔽射线的挡墙、铅化合物等，防止射线进入其他像素，抑制相邻像素之间的干扰，可以来改善成像传感器的重影以及光交叉问题，获得良好的成像效果。
附图说明
图1是目前传统成像传感器基板的剖面示意图；
图2是闪烁体层结构示意图；
图3是有源矩阵基板像素结构俯视示意图；
图4是带有挡墙结构的闪烁体层的成像传感器基板剖面示意图；
图中：1-有源矩阵基板，2-光电探测层，3-闪烁体层，4-有源矩阵基板上的像素，5-闪烁体挡墙。
具体实施方式
图1是目前传统成像传感器基板的剖面示意图
成像传感器基板主要由最下层有源矩阵基板加上光电探测层以及闪烁体层组成。当射线，如X射线穿透检测物体，通常为间接能量转换，需要先通过闪烁体层，转换为可见光，再入射到光电探测层，转换为电荷，电荷再累积到有源矩阵层上进行读取，就能把被检测物体的形状通过数字信号读取出来。当射线照射到闪烁体上时，会发生漫反射，射线进入其他像素区域，造成相邻像素的电荷失真，影响成像准确性。
图2是闪烁体结构示意图
通常闪烁体材料由连续排列的针状碘化铯晶体构成，针柱的直径约6微米，外表面由重元素铊包裹以形成可见光波导减少漫射。出于防潮的需要闪烁体层生长在薄铝板上，应用时铝板位于X射线的入射方向同时还可起到光波导反射端面的作用，闪烁体层的厚度为500至600微米。
图3是有源矩阵基板像素结构俯视示意图
在有源矩阵基板上，形成多个像素结构，晶体管通常为非晶硅、单晶硅、多晶硅、4属氧化物或者有机半导体等。电荷聚集到像素电极上，再通过三极管进行读取，通常非晶硅的漏电流较大，单晶硅、多晶硅次之，目前金属氧化物的漏电流最小，漏电流越下，刷新频率越高，可以用在动态检测。4为有源矩阵基板上的像素，像素的大小通常为小于150-200um，和分辨率、量子效率、电子迁移率等相关，像素的开口率要尽量大，以获得更高的量子转换效率。
图4是带有挡墙结构的闪烁体层的成像传感器基板剖面示意图
在光电探测层上先做一层挡墙再蒸镀闪烁体材料，或者在闪烁体基板上先做一层挡墙，再蒸镀闪烁体材料，最后把闪烁体层和光电探测层基板进行贴合。挡墙的材料为铅化合物等能吸收射线的材料，防止射线进入其他像素区域。挡墙的结构和像素一一对应。
以上所述仅为本发明的较佳实施例，并非用于限定本发明的保护。
Claims (7)
1.一种成像传感器基板，其特征在于，含有一层有源矩阵基板层、一层光电探测器层、一层闪烁体层，射线经过闪烁体层转化为可见光，可见光再通过光电探测层转化为电子，有源矩阵基板层通过像素对电子进行信号处理；相对应的，在闪烁体层上也有像素通过挡墙互相间隔开并且和有源矩阵基板上的像素一一对应。
2.根据权利要求1所述的成像传感器基板，其特征在于，所述闪烁体层上的像素尺寸在200um以内，通过蒸镀或者印刷等工艺生长而成，为针状晶体结构，闪烁体的厚度为小于500um，闪烁体的厚度和产品的设计要求相关。
3.根据权利要求1所述的成像传感器基板，其特征在于，所述光电探测层的材料为非晶硅(a-Si)、钙钛矿、铜铟镓硒(CIGS)、碲化镉(CdTe)等。
4.根据权利要求1所述的成像传感器基板，其特征在于，所述有源矩阵基板可以为单晶硅、非晶硅、低温多晶硅、金属氧化物、有机半导体等材料。
5.根据权利要求2所述的成像传感器基板，其特征在于，所述闪烁体可以为无机或者有机材料，通过间接能量转换，把放射线转化为可见光，材料通常为碘化铯(CSI)、碘化钠、硫化锌、非晶硒等。
6.根据权利要求2所述的成像传感器基板，其特征在于，所述的闪烁体上的像素通过挡墙、黑色矩阵、铅化合物等无机、有机等材料分开，防止X射线进入其他区域。
7.根据权利要求2所述的成像传感器基板，其特征在于，所述的闪烁体上的像素大小、形状和有源矩阵像素开口的形状、大小相对应，确保X射线转换的电子可以完整的流入有源矩阵。
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|---|---|---|---|---|
| CN110137199A (zh) * | 2019-07-09 | 2019-08-16 | 南京迪钛飞光电科技有限公司 | 一种x射线传感器及其制造方法 |
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