CN1444192A - Distributing structure, it mfg. method and optical equipment - Google Patents

Distributing structure, it mfg. method and optical equipment Download PDF

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Publication number
CN1444192A
CN1444192A CN03104144A CN03104144A CN1444192A CN 1444192 A CN1444192 A CN 1444192A CN 03104144 A CN03104144 A CN 03104144A CN 03104144 A CN03104144 A CN 03104144A CN 1444192 A CN1444192 A CN 1444192A
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Prior art keywords
layering
metal
wiring layer
distribution structure
alloy
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CN03104144A
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CN100517422C (en
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曽谷直哉
鈴木浩司
宫井良雄
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority claimed from JP2002062670A external-priority patent/JP2003264192A/en
Priority claimed from JP2002066143A external-priority patent/JP2003264193A/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Abstract

A layered structure of wire(s) comprising a wiring layer made of a low resistance metal containing aluminum, copper or silver; and an alloy layer made of an intermediate phase containing the low resistance metal and a refractory metal. The refractory metal is molybdenum. There is also formed a layered structure of wire(s) made of an aluminum alloy containing a lanthanoid, wherein a number average crystal grain size is 16.9 nm or more. Crystal grain size may be larger than a mean free path of electrons to provide a layered structure of wire(s) with a reduced resistance.

Description

Distribution structure, its manufacture method and optical device
(1) technical field
The present invention relates to distribution structure, its manufacture method and the optical device of layering.
(2) background technology
(OLED: Organic Light Emitting Diode) device has the effect that is similar to light emitting diode to organic EL, and (OLED: Organic Light Emitting Diode) display of device is used for substituting CRT or LCD has caused people's attention to adopt the organic EL of current drives.
In the optical element of OLED display, the distribution that is used as power lead must have extreme high reliability; Particularly, it must be low-resistance and can prevent burr/hillock, electromigration and stress migration.In order to reduce resistance, the low resistive metal of use such as aluminium is as the material of distribution.
On the distribution that the low resistive metal such as aluminium is made, can form one deck by the metal protective seam of the refractoriness such as molybdenum, prevent the ability of burr/hillock with raising.In addition, adopt and to contain at least a lanthanide series (for example, neodymium) aluminium alloy can improve preventing electromigration as wiring material.
The distribution that is used for organic EL must have low-down resistance, to avoid voltage drop.Yet the aluminium alloy that contains neodymium when use is during as wiring material, and distribution can present the distribution high resistivity more made than simple aluminium.In addition, form the protective seam of making by molybdenum and also can cause higher resistivity.
In addition, when adopting the metal protective seam of refractory-temperature to cover the distribution that low resistive metal makes, the adhesiveness between these layers is with variation, and contact resistance also can undesirably increase.Particularly, when the lattice types of refractoriness metal was different from the lattice types of low resistive metal, these layers just can not mate mutually, thereby cause layering.When forming distribution on the amorphism substrate, each layer all presents random crystal orientation, the feasible adhesiveness that can more seriously reduce interlayer.
(3) summary of the invention
The present invention In view of the foregoing makes, and an object of the present invention is to provide a kind of high reliability distribution that reduces resistance that has.Another object of the present invention provides a kind of distribution that improves electromigration resistance that has.Another object of the present invention provides a kind of distribution with stress migration resistance of raising.A further object of the invention provides a kind of distribution with durability of improvement.A further object of the invention is the yield rate that improves in the method for making distribution.
According to the present invention, the distribution structure of the layering that aluminium alloy that a kind of employing contains neodymium makes is provided, in this structure, the average particle size particle size of the crystal of alloy is 16.9nm or slightly larger.The average particle size particle size of the crystal here is the digital average particle size that the total size by each crystal grain in the alloy calculates divided by the sum of crystal grain.
The digital average particle size of crystal can be about 16.9nm or slightly larger, and this size is the mean free path of the electronics in the aluminium, reducing the electrons spread probability in the grain boundary, and therefore reduces the resistivity of distribution.
The digital average particle size of crystal can be 30nm or slightly larger.The digital average crystallite dimension of crystal with electron mean free path of three times of journeys or more times of journeys can further reduce the resistivity of distribution.
According to the present invention, the distribution structure of the layering that aluminium alloy that a kind of employing contains neodymium makes is provided, in this structure, 90% of total crystal is that crystallite dimension is 30nm or slightly larger crystal in the alloy.The particle size of crystal can be greater than electron mean free path, to reduce the resistivity of distribution.
Lanthanide series can be neodymium (Nd).The content of the neodymium in the alloy is recommended as 1% atomic percentage or more, and 2% atomic percentage or more preferably is to improve electromigration resistance.On the other hand, recommended to be limited to 10% atomic percentage, 5% atomic percentage preferably keeps the low-resistivity of distribution simultaneously to improve electromigration resistance.So it is very reliable that the structure of distribution just becomes.
According to the present invention, the optical device of the distribution structure of the above-mentioned layering that comprises a circuit and be connected to this circuit is provided, described circuit comprises the current drives optical element.Here, optical element can be an organic EL.The circuit that comprises optical element can be an organic EL itself, or also comprises thin film transistor (TFT) (TFT) in addition except organic EL, is used to drive organic EL.When circuit comprised TFT, the distribution structure of layering can be connected with TFT.
Optical device can have a plurality of circuit, and the distribution structure of layering can be connected with a plurality of circuit, makes it to use as power lead, is used for to each circuit supply.Here, optical device can be an active array display unit.Big electric current can flow through the power lead that is used for to each circuit supply, and this will be easy to cause migration at the contact place especially.Distribution structure according to layering of the present invention has higher migration resistance and higher reliability.Therefore, it can be as the power lead of optical device, to power constantly and equably to each circuit from a contact.So, can prevent to offer the leakage of each circuit voltage, allow to have the steady display device that reduces luminance non.
The distribution structure of layering can be connected with the current drives optical element.When as the distribution structure of the layering of above-mentioned configuration when being applied to the current drives optical element, the distribution structure of this layering is useful.
According to the present invention, provide a kind of method of making the distribution structure of layering.This method comprises by adopting aluminium alloy to carry out spraying plating as target, the aluminium alloy that contains neodymium is deposited on is heated to 50 ℃ of upper surfaces to the substrate of 150 ℃ (both is included), and wherein the spraying plating processing is that substrate and target are being remained on 0.18/ (M 1/2* d) carry out under Pa or the lower decompression pressure, wherein M is that the atomic wts of metal target and d are the distances between substrate and the target.Here the term that is adopted " atomic wts " is meant average atom weight in the principal ingredient metal or minimum atomic wts when metal target is alloy.This method allows the digital average particle size of crystal can be greater than the mean free path of electronics, thereby the distribution structure with the layering that reduces resistance is provided.Between the distribution structure of substrate and layering, can there be intervening layer.
After the distribution structure that has deposited layering, the heating of substrate temperature was heated to 450 ℃ (both is included) during the distribution structure of layering can be handled from spraying plating.This heating can further reduce the resistance of the distribution structure of layering.
According to the present invention, a kind of display device that comprises the distribution structure of the layering that the aluminium alloy that contains neodymium is made is provided, wherein the digital average particle size of alloy crystal is 16.9nm or bigger.The digital average particle size of crystal can be the free average stroke of electronics at least, with the diffusion probability of minimizing electronics in the grain boundary, and therefore to reduce the resistivity of distribution.
Display device can comprise the driving transistors of optical element and optical element.The distribution structure of layering can be connected with optical element or driving transistors.When the distribution structure of the layering that will as above dispose is applied to distribution that optical element in display device for example or driving transistors provide electric current, adopt the distribution structure of layering of said method configuration just very useful.
According to the present invention, a kind of distribution structure of layering is provided, it comprises the metal wiring layer that contains aluminium, copper or silver and contains the metal that constitutes wiring layer and the alloy-layer that makes mutually the centre of the refractoriness metal adjacent with wiring layer.The metal that constitutes wiring layer can be the metallic element such as aluminium, copper or silver, or contains 1% to 99% aluminium, copper or silver-colored alloy.The metal that constitutes wiring layer can have the resistivity lower than refractoriness metal.Hereinafter, the metal that constitutes wiring layer is called " low resistive metal ".
When two kinds of metals with different crystal structure can form solid solution, depend on specific alloy for the priority area of these crystal structures.In these metals, produce synthetic zone sometimes, this zone is considered to present the middle phase of the crystal structure that is different from any composition metal.Present low especially metallic centre and be called intermetallic compound mutually, and present the tangible metallic middle time solid solution that just is called mutually.In intermetallic compound, the ratio of the atomicity of metal ingredient is a relative simple integer, and the atom site of crystal lattices is fixed.
The centre can be intermetallic compound mutually.In general, intermetallic compound presents the covalent bond characteristic, thereby is characterized by brittleness and little coefficient of diffusion, and has big resistance simultaneously.Because intermetallic compound is hard, so the distribution structure of layering can adopt alloy-layer as being covered with wiring layer and/or the intermetallic compound under wiring layer, so that wiring layer is avoided the influence of external stress, thereby improves stress migration resistance.
According to the present invention, provide a kind of wiring layer of making by the low resistive metal that contains aluminium, copper or silver that comprises; The metal protective seam of refractoriness; And by the distribution structure of the layering that between contiguous wiring layer and protective seam, contains the alloy-layer of low resistive metal and the centre of refractoriness metal making mutually.Formed alloy-layer can prevent that the metal diffusing of wiring layer from arriving protective seam between wiring layer and protective seam, thereby very effective to reducing migration.In addition, the alloy-layer that forms between distribution and protective seam can improve the adhesiveness of these interlayers.The raising of the adhesiveness between wiring layer and the protective seam has also just reduced the contact resistance of interlayer.In addition, because intermetallic compound can prevent diffusion, so when the centre is intermetallic compound mutually, can avoid the formation of the alloy-layer between refractoriness metal and low resistive metal.Thereby, can form thin and uniform alloy-layer.
According to the present invention, provide a kind of wiring layer of making by the low resistive metal that contains aluminium, copper or silver; The metal protective seam of refractoriness; And between contiguous wiring layer and protective seam and the composition of low resistive metal and refractoriness metal be the distribution structure of the layering that constitutes of the alloy-layer that gradually changes.The alloy-layer of this class between wiring layer and protective seam can improve the adhesiveness of these interlayers.The composition that alloy-layer is not limited to above-mentioned low resistive metal and refractoriness metal is the alloy-layer that gradually changes, but the metal ingredient of alloy-layer can be non-continually varying.
The example of refractoriness metal comprises the element of those 6A families, for example, and molybdenum (Mo), chromium (Cr) and tungsten (W); The perhaps element of 5A family, for example, titanium (Ta), vanadium (V) and niobium (Nb).This class protective seam can improve the anti-burr of distribution structure of layering and the ability of hillock.Particularly, the element of 6A family has the feature to spreading in the low resistive metal of reduction.
The example of refractoriness metal comprises that those comprise the metal such as molybdenum, chromium, tungsten, titanium, vanadium or niobium, and the lattice types of these metals is body-centered cubic structure (bcc).The example of low resistive metal comprises that those comprise such as aluminium (Al), copper (Cu), silver (Ag), gold (Au), rhodium (Rh), iridium (Ir), nickel (Ni), the metal of platinum (Pt) and palladium (Pd) and so on, the lattice types of these metals are face-centred cubic structure (fcc).As mentioned above, can between metal, form alloy-layer with different crystalline lattice type, with the adhesiveness of raising at these metal interlevels, and then the yield rate of raising in the method for the distribution structure of making layering.Above-mentioned mentioned lattice figure is exactly the lattice figure of generally illustrating discussion in textbook with room temperature.
The refractoriness metal preferably contains molybdenum.Because molybdenum can present the adhesiveness good with substrate, it can improve the whole adhesiveness of distribution, therefore helps the raising of yield rate.In addition, molybdenum has easy to handle feature in manufacture process.
Low resistive metal can contain aluminium.Aluminium is high activity metal.Therefore, when distribution adopts the low resistive metal that contains aluminium to make, phase in the middle of between wiring layer and refractoriness metal, just forming easily.
Wiring layer can also contain neodymium, and neodymium can also be contained mutually in the centre.In addition, wiring layer can contain lanthanide series mutually with the centre.The recommendation of the content of neodymium is 1% atomic percentage or more in wiring layer, and the best is 2% atomic percentage or more, to improve electromigration resistance.On the other hand, it is 10% atomic percentage that the upper limit is recommended, and preferably 5% percentage to improve electromigratory resistance, keeps the low-resistivity of wiring layer simultaneously.It is effective too to present other lanthanide series that is equivalent to the neodymium chemical characteristic substantially.
The thickness of alloy-layer be recommended as 1nm or more than, preferably 10nm or more than, to improve the adhesiveness between wiring layer and the protective seam.On the other hand, the upper limit is recommended as 50nm, preferably 15nm.Intermetallic compound has poor electric conductivity.Therefore, when this layer is thicker, vertical resistor, promptly contact resistance has just increased.When forming intermetallic compound by interfacial reaction, reduced the film thickness of low resistive metal, cause the increase in the wiring resistance.In addition, when the intermetallic compound of fragility formed thicker thickness, distribution just had crackle, thereby can cause fracture.Must between refractoriness metal and low resistive metal, form intermetallic compound in the film mode.The formed film thickness of alloy-layer be recommended as 1nm or more than, 10nm preferably, and to recommend be 50nm or following, preferably 15nm or following to address the above problem, is used for advantageously improving stress migration resistance, electromigration resistance and adhesiveness.Thereby, can improve the reliability of the distribution structure of layering.
The distribution structure of layering can be connected with the optical element of current drives.When being applied to the current drives optical element, be useful as the distribution structure of the layering of above-mentioned configuration.
According to the present invention, provide a kind of circuit that contains the current drives optical element and optical device of the distribution structure of the above-mentioned layering that is connected with this circuit of comprising.Here, optical element can be an organic EL.The circuit that comprises optical element can be an organic EL itself, maybe can comprise, except organic EL, is used to drive the thin film transistor (TFT) (TFT) of organic EL.When circuit comprised TFT, the distribution structure of layering can be connected with TFT.
Optical device can comprise a plurality of circuit, and the distribution structure of layering can be connected with a plurality of circuit, makes it be used as the power lead to each circuit supply.Here, optical device can be an active array display unit.Distribution structure according to layering of the present invention has lower contact resistance and higher reliability.Therefore, it can be as the power lead of display, and the leakage with the voltage of avoiding offering each circuit allows to have the heteropical steady display that reduces in the brightness.
According to the present invention; a kind of method of making the distribution structure of layering is provided; it comprises that the refractoriness metal that contains molybdenum by utilization carries out spraying plating as target; be heated to 50 ℃ of upper surfaces formation protective seams to the substrate of 150 ℃ (both is included); and the low resistive metal that contains aluminium, copper or silver by utilization when substrate being heated to 50 ℃ to 150 ℃ (both is included) carries out spraying plating as target; on protective seam, form wiring layer; wherein, the formation of the formation of protective seam and wiring layer is at 0.18/ (M 1/2* d) carry out under Pa or the lower reduced pressure, wherein M is the atomic wts of metal target, perhaps when metal target is alloy, M is the mean value of atomic percentage of atomic wts of compound metal or the minimum atomic wts of Main Ingredients and Appearance metal, and d is meant the distance between substrate and the target; And the formation of wiring layer is not exposed under the conditions of air at substrate to be carried out.According to this method, the centre can form between protective seam and wiring layer mutually, so that as one man produce the distribution structure of layering all the time.In addition, the adhesiveness between protective seam and wiring layer can be improved, and adopts the yield rate of the distribution structure method of this manufacturing layering to be improved.Here an intervening layer can be set between substrate and protective seam.
This method also is included in and has formed after the wiring layer, and the temperature of the distribution structure of the layering heating of substrate temperature during the spraying plating process is heated to 450 ℃.Such heating can reduce the resistance of the distribution structure of layering.
According to the present invention; a kind of method of making the distribution structure of layering also is provided; it comprises that containing aluminium, copper or silver-colored low resistive metal by utilization carries out spraying plating as target; form wiring layer at the upper surface that is heated to 50 ℃ to 150 ℃ substrate; and substrate being heated to 50 ℃ in 150 ℃, the refractoriness metal that contains molybdenum by utilization carries out spraying plating as target, forms protective seam on wiring layer; wherein, the formation of the formation of protective seam and wiring layer is at 0.18/ (M 1/2* d) carry out under Pa or the lower reduced pressure, M wherein is the atomic wts of metal target, when metal target is alloy, it is the mean value of atomic percentage of atomic wts of compound metal or the minimum atomic wts of Main Ingredients and Appearance metal, and d is meant the distance between substrate and the target; And the formation of wiring layer is not exposed under the conditions of air at substrate to be carried out.According to this method, the centre can form between protective seam and wiring layer mutually, so that as one man produce the distribution structure of layering all the time.In addition, the adhesiveness between protective seam and wiring layer can be improved, and adopts the yield rate of the distribution structure method of this manufacturing layering to be improved.Here an intervening layer can be set between substrate and protective seam.
This method also is included in and has formed after the protective seam, and the heating of substrate temperature of temperature from the spraying plating process of the distribution structure of layering is heated to 450 ℃.Such heating can reduce the resistance of the distribution structure of layering.
According to the present invention; a kind of method of making the distribution structure of layering also is provided; it comprises that containing aluminium, copper or silver-colored low resistive metal by utilization carries out spraying plating as target; upper surface at substrate forms wiring layer; and carry out spraying plating as target by the refractoriness metal that utilization contains molybdenum, and on wiring layer, form protective seam, make formed protective seam to contact with wiring layer; wherein, the formation of the formation of protective seam and wiring layer be basic equivalence by P * M 1/2Carry out under the condition of the impact of particles parameter of expression, wherein P is a spraying plating pressure, M is meant the atomic wts of metal target, or when metal target is alloy, then be the mean value of atomic percentage of atomic wts of compound metal or the minimum atomic wts of Main Ingredients and Appearance metal, and d is meant the distance between substrate and the target.Here employed term " atomic wts " is meant average atom weight in the Main Ingredients and Appearance metal or minimum atomic wts when metal target is alloy.The condition of basic equivalence is that for example, the impact of particles parameter is than those conditions that are 0.9 to 1.1.
Thereby wiring layer and protective seam can adopt the method for spraying plating to make under the condition of equivalent substantially impact of particles parameter, so that as one man produce intervening layer all the time.
The invention still further relates to any appropriate combination of said elements, as effective aspect, and described in the present invention method and/or device can change.
(4) description of drawings
Fig. 1 is the planimetric map of a pixel in the explanation OLED display.
Fig. 2 A has shown the sectional view of the pixel A-A along the line that Fig. 1 is illustrated.
Fig. 2 B has shown the sectional view of the pixel B-B along the line that Fig. 1 is illustrated.
Fig. 3 is the sectional view with distribution of sandwich construction.
Fig. 4 has shown the sectional view (transmission electron microscope (TEM) photo) of driving power supply line.
Fig. 5 has shown the border of each crystal grain in section shown in Figure 4.
Fig. 6 A has shown the ellipse that is similar to the illustrated border of Fig. 5.
Fig. 6 B has shown that amplification is similar to the illustrated ellipse of Fig. 6 A.
Fig. 7 A has shown the particle size of crystal illustrated in the section of Fig. 4.
Fig. 7 B has shown the particle size of crystal illustrated in the section of Fig. 4.
Fig. 8 A has shown the section (TEM photo) of the distribution structure of layering.
Fig. 8 B has shown the TEM photo of Fig. 8 A, and it has been indicated on the border between first alloy-layer and the wiring layer and at second alloy-layer with border between the wiring layer of dashed line is arranged.
Fig. 9 A is the section that is presented at the second alloy-layer near zone.
Fig. 9 B has shown the result who adopts energy dispersion type X ray spectroscope to measure metal ingredient in the alloy-layer.
Figure 10 has shown the binary phase diagraml of aluminium and molybdenum.
(5) embodiment
To the present invention be described based on preferred embodiment now, the scope that these embodiment are not intended to limit the invention and just be used to explain the present invention.All features of being discussed in an embodiment and these combination of features are not necessary for the present invention.
Distribution structure according to a kind of layering of present embodiment is used for the active matrix organic EL display.Fig. 1 is the planimetric map of explanation configuration structure of one of pixel in this display.In Fig. 1, only shown the structure of a pixel, but active array display unit can have a large amount of identical pixels illustrated as matrix, in matrix, each pixel all has an on-off element.
Pixel be formed on by 52 of signal line 51 and drain signal line around the zone in.Pixel has as a TFT 30 of on-off element and is used to drive the 2nd TFT 40 of organic EL, and capacitor 90.
The one TFT 30 comprises the gate electrode 11 that connecting signal line 51 and signal is fed to this electrode, connecting the drain electrode 13d of drain signal line 52 and drain signal is being fed to this electrode, and the source electrode 13s that is connecting the 2nd TFT 40 by an electrode 55 of capacitor 90.
Electrode 55 in the capacitor 90 be with a TFT in the integrated system type of source electrode 13s.Another electrode 54 in the capacitor 90 be by, for example, chromium, the made and insulation film stored charge between this electrode and electrode 55 by grid.Capacitor 90 is keeping being applied to the voltage on the gate electrode 42 among the 2nd TFT 40.
The 2nd TFT 40 comprises the gate electrode 42 that is connecting the source electrode among the TFT 30, is connecting the drain electrode 43d of the anode 61 of organic EL 60, and the source electrode 43s that is connecting driving power supply line 53.
Fig. 2 A has shown the section part of A-A line in Fig. 1, and Fig. 2 B has then shown the section part of B-B line in Fig. 1.Shown in Fig. 2 A, on the substrate 10 of insulation, form active layer 13.Insulating substrate 10 can by, for example, quartz glass or alkali-free glass are made.Active layer 13 can be made by polysilicon (p-Si) film, and polysilicon membrane is to adopt the generation of laser beam irradiation amorphous silicon (a-Si) film polycrystalline.In the figure, the grid structure on upper strata has been described, but the present invention is not limited to specific structure.Active layer 13 is included in the source electrode 13s and the drain electrode 13d on two raceway groove 13c both sides.In this embodiment, source electrode 13s and drain electrode 13d are the ion dopings that adopts n class impurity, and a TFT 30 is n channel device.
Formation grid insulating film 12 on active layer 13, an electrode of formation gate electrode 11 and capacitor 90 on this film subsequently.Gate electrode 11 can adopt the refractoriness metal, and for example, chromium and molybdenum are made, and constitutes the part of signal line 51 as shown in Figure 1.
Form a layer insulation film 15 on the whole surface of gate electrode 11 and grid insulating film 12, it is by SiN film and SiO 2Film constitutes.Can adopt metal (for example, aluminium) to fill at relevant formed contact hole, extract electrode 16 with the drain electrode that forms a part that constitutes drain signal line 51 with drain electrode 13d.
Shown in Fig. 2 B, on insulating substrate 10, form active layer 43.Active layer 43 can adopt with active layer 13 identical materials and make.In active layer 43, form raceway groove 43c, and form source electrode 43s and drain electrode 43d on its both sides.In the present embodiment, source electrode 43s and drain electrode 43d adopt p class foreign ion to mix, and the 2nd TFT 40 is p channel device.
On active layer 43, form grid insulating film 12, on this film, form gate electrode 42 subsequently.Gate electrode 42 is to be made of the refractoriness metal such as chromium and molybdenum.Gate electrode 42 links to each other with source electrode 13s among the TFT 30.In active layer 43, passage 43c be formed on gate electrode 42 below.
On the whole surface of grid insulating film 12 and gate electrode 42, formed layer insulation film 15.The contact hole relevant with source electrode 43s metal filled by such as aluminium is to form driving power supply line 53.The method that forms driving power supply line 53 will be described later.
At layer insulation film 15, formed a complanation insulation film 17 of making by organic resin on the whole surface of drain electrode extraction electrode 16 (shown in Fig. 2 A) and driving power supply line 53.On complanation insulation film 17, form organic EL 60.Organic EL 60 has the structure that anode 61, photocell layer 66 and negative electrode 67 deposit successively.Anode 61 is connected with drain electrode 43d by the contact hole that the drain electrode 43d in opposite planar dielectric film 17 forms.On anode 61, form insulation film 68.The formation of insulation film 68 is to cause short circuit between negative electrode 67 and the anode 61 in order to prevent owing to step that the thickness of anode 61 produces makes 66 fracture of photocell layer.
The examples of material that anode 61 adopts comprises indium-Xi-oxide (ITO), tin ash (SnO 2) and indium oxide (In 2O 3).Usually, ITO is used owing to its hole injection effect and low surface resistance.The examples of material that negative electrode 67 adopts comprises aluminium alloy, magnesium-indium alloy and the magnesium-silver alloy that contains micro-lithium.Photocell layer 66 structure are deposited successively by hole transport layer 62, light-emitting layer 64 and electron transfer layer 65 and form.The examples of material that hole transport layer 62 adopts comprises 4,4 '; 4 "-tris (3-methyl phenyl phenyl amino) three phenylaminos (MTDATA), N, N '-Di (naphthalene-1-yl)-N, N '-diphenyl-benzidine (NPB) and N, N '-diphenyl-N, N '-di (3-aminomethyl phenyl)-1,1 '-phenylbenzene-4,4 '-diamines (TPD).The examples of material of light-emitting layer 64 comprises two (benzoquinoline also) (benzoquinolinolato) beryllium complex, contains a kind of quinoline a word used for translation (two) ketone (quinacridone) derivant (two (10-hydroxy benzenes [h] quino) beryllium (bis (10-hydroxybenzo[h] quinolinolato) beryllium): Bebq2) and aluminium-quinoline (quinolene) complex (Alq3).The examples of material of electrode transport layer 65 comprises Bebq2 and Alq3.
Form hole transmission layer 62, electron transfer layer 65 and negative electrode 67, they can be shared by a plurality of organic ELs 60 in each pixel.In response to anode 61 light-emitting layer 64 is formed the island.
To a pixel, above structure and material only is illustrative, and does not limit the scope of the invention.For example, a TFT 30 and the 2nd TFT 40 can be n channel-type, p channel-type or or even n raceway groove and p raceway groove combined.In a TFT 30, can use source electrode and drain electrode to substitute respectively in response to the voltage that applies by the part that drain electrode 13d and source electrode 13s constitute.Organic EL 60 can have such structure, and promptly wherein anode 61, light-emitting layer 66 and negative electrode 67 deposit successively conversely.Between layer and layer, can form intervening layer.
The photoemissive operation of organic EL in the pixel that disposes like this will be described here.When from signal line 51 when gate electrode 11 applies a signal, a TFT 30 opens.The electric charge that applies of source electrode 13s from a TFT30 is stored capacitor 90 like this, also is applied to the gate electrode 42 of the 2nd TFT 40 simultaneously.To organic EL 60, in response to the electric current of the voltage on the gate electrode 42 that is applied among the 2nd TFT 40 from driving power supply line 53 feed-ins.
In organic EL 60, excite in order to produce, from anode 61 injected holes and from negative electrode 67 injected electrons in the inside of light-emitting layer 64 recombination, the organic molecule that constitutes light-emitting layer 64 is excited.In the inactivation that energy emission excites, light-emitting layer 64 sends light, and it is by 61 discharges of transmission anode and be considered to the light emission of organic EL 60.
The pixel structure of according to the above description OLED display is described feature of the present invention.In one embodiment of the invention, be connected to the distribution of the TFT in each pixel of OLED display, as signal wire, sweep trace and driving power supply line, be to adopt that low resistive metal is made and have sandwich construction, wherein the crystal grain size of low resistive metal alloy is greater than the mean free path of electronics.
Fig. 3 is the sectional view with distribution of above-mentioned sandwich construction.In the drawings, will use driving power supply line 53 to be described as an example.Driving power supply line 53 is included in first protective seam 110 on the interlayer insulating film 15; Wiring layer 112 on first protective seam 110; And second protective seam 114 on wiring layer 112.In driving power supply line 53, first alloy-layer 116 and second alloy-layer 118 be respectively formed between first protective seam 110 and the wiring layer 112 and the wiring layer 112 and second protective seam 114 between.
First protective seam 110 and second protective seam 114 can be made of the metal of body centred cubic (bcc) lattice types.First protective seam 110 and second protective seam 114 preferably are made of 6A family or 5A family element such as chromium (Cr), molybdenum (Mo), tungsten (W), vanadium (V), niobium (Nb), tantalum (Ta).In this embodiment, first protective seam 110 and second protective seam, 114 usefulness molybdenums are made.
Wiring layer 112 can be made of the metal with the crystalline network that is different from first protective seam 110 or second protective seam 114.For example, distribution 112 can be the metal formation of face-centered cubic (fcc) by crystal structure.Wiring layer 112 is preferably by aluminium, or resistance is lower than the copper or the silver formation of aluminium.In this embodiment, wiring layer 112 is made of aluminium.
In addition, wiring layer 112 can comprise a lanthanide series metal, for example, and neodymium.In order to improve the wired electric migration resistance, lanthanide series metal can join in the low resistive metal such as aluminium.In the present embodiment, wiring layer 112 is made by aluminum-neodymium alloys (Nd-Al).In the present embodiment, the content of neodymium in aluminum-neodymium alloys is 2% atomic percentage.
First alloy-layer 116 and second alloy-layer 118 can be made of metal that constitutes the refractoriness metal level and the intermetallic compound that constitutes the metal of low resistance metal layer.In this embodiment, first alloy-layer 116 and second alloy-layer 118 are that intermetallic compound by aluminum-neodymium alloys and molybdenum constitutes.Example
The present invention will make an explanation as a reference with concrete example.
Forming SiO 2Film to become after the substrate, forms contact hole as interlayer dielectric in interlayer dielectric.Then, adopt load-lock (load-lock) (LL) type multi-cavity chamber precipitation equipment the distribution structure of layering is deposited on the interlayer dielectric.This precipitation equipment contains the first spraying plating chamber of LL chamber, treatment chamber, placement molybdenum target and places the second spraying plating chamber of aluminum-neodymium alloys target.Neodymium content in aluminum-neodymium alloys is 2% atomic percentage.
At first, LL chamber, treatment chamber, the first spraying plating chamber and the second spraying plating chamber are by forvacuum to 10 -3Pa, substrate is transported to treatment chamber from the LL chamber then.Open the family of power and influence between the treatment chamber and the first spraying plating chamber, substrate is sent to the first spraying plating chamber, is heated to 100 ℃ then.Then, argon gas is transported to the first spraying plating chamber, and argon pressure is controlled to be 0.23Pa.Adopt following condition, i.e. power: 6.2KW, argon flow rate: 100sccm in the spraying plating; Deposit first protective seam of making by molybdenum that reaches 50nm.TEM (transmission electron microscope) observations can be made description below, and the result shows the deposition that employing is such, and first protective seam and interlayer dielectric have extraordinary adhesiveness.
Then, the first spraying plating chamber is evacuated to 10 -3Pa, substrate is sent to the second spraying plating chamber by treatment chamber then.Because treatment chamber, the first spraying plating chamber and the second spraying plating chamber are to remain in the vacuum environment, need not from the reduced pressure air environment, remove substrate and just can deposit down one deck.Therefore, the surface of first protective seam can keep clean and enough active.
In the second spraying plating chamber, substrate is heated to 100 ℃.Then, argon gas is transported to the second spraying plating chamber, and argon pressure is controlled to be 0.41Pa.Adopt following condition, power: 6.5KW, argon flow rate: 100sccm in the spraying plating; Deposit reach 400nm make wiring layer by aluminum-neodymium alloys.
Once more, the second spraying plating chamber is evacuated to 10 -3Pa, substrate is sent to the first spraying plating chamber by treatment chamber.In the first spraying plating chamber, substrate is heated to 100 ℃.Then, argon gas is transported to the first spraying plating chamber, and argon pressure is controlled to be 0.23Pa.Adopt following condition, power: 6.2KW, argon flow rate: 100sccm in the spraying plating; Deposit second protective seam of making by molybdenum that reaches 50nm.In the present embodiment, the substrate in the first and second spraying plating chambers and the distance of target are 0.05m.
After forming sandwich construction, reach 30 minutes 350 ℃ of heated substrate.
In the above example, the pressure of the first and second spraying plating chambers is respectively 0.23Pa and 0.41Pa.Pressure in these spraying plating chambers can be by to make decision.Preferably,, the particle spraying plating such as energetic atom or ion to substrate, is formed the distribution structure of stable layering by increasing crystallite dimension, and phase in the middle of further as one man forming.Therefore after needing the spraying plating particle to come out, be not subjected to the collision of other particle such as argon gas directly to arrive substrate from the target spraying plating.More particularly, method is to reduce the impact of particles parameter of being represented by d/ λ as much as possible preferably, and d (with " rice " expression) is the distance between substrate and the target here, and λ is the mean free path of particle.
The probability of collision is to be proportional to the area of section of particle and the pressure P in the spraying plating chamber.Mean free path is proportional to particle's velocity v and is inversely proportional to collision probability.Like this, relation can be expressed as λ ∝ v/ (P * S).Each particle's velocity v is expressed as E=1/2 * mv 2, wherein m is a particle weight.Here m can be expressed as m ∝ M, wherein M is the atomic wts (though M can be the average atom weight or the minimum atomic wts of major metal in the alloy when metal target is alloy) of metal target, and the average energy of the particle that discharges from target has nothing to do with the type of atom or target, and constant is 5 to 10eV.Therefore, there is such relation: v ∝ (1/M) 1/2So mean free path λ can be by λ ∝ 1/ (M 1/2* P * S) represent.In other words, when between substrate and the target be constant apart from d the time, preferably can reduce the pressure in the spraying plating chamber as much as possible.The sectional area of particle can be approximated to be π r 2, wherein r is the radius of atom.Because recommending in the present embodiment to use the atomic radius of metal is the constant that is about 1.25 to 1.45 , so S also can be expressed as constant.
As mentioned above, mean free path can adopt λ ∝ 1/ (M 1/2* P * S) represent, and molecular weight M that can be by changing each particle and the pressure P of spraying plating chamber are controlled.In other words, the pressure of spraying plating chamber preferably can hang down, and concerning the particle with larger molecular weight M, the pressure of spraying plating chamber should hang down.
Because the parameter of above-mentioned impact of particles can be by P * M 1/2* d represents, thus between substrate and target apart from d reduce can be effective equally.In the present embodiment, between substrate and target, can be 0.1m or littler apart from d.
In the present embodiment, can select the pressure P in the spraying plating chamber, make impact of particles parameter P * M 1/2* d is 0.18 or littler.Therefore, the pressure P in the spraying plating chamber can be 0.18/ (M 1/2* d) or littler.So the distribution structure with layering of big crystalline size can form consistently, and in addition, middle phase also can form consistently.The lower limit of the pressure P in the spraying plating chamber is preferably 0.1Pa, makes each layer to deposit consistently.
The temperature of substrate in the spraying plating process can be 50 ℃ to 150 ℃ (both is included).In addition, heating also can be heated to 450 ℃ (both is included) from the substrate temperature the spraying plating process.
Fig. 4 has shown the xsect (TEM photo) of the driving power supply line 53 of above-mentioned discussion.Just as is shown in this figure, the crystal grain of aluminum-neodymium alloys forms in wiring layer.
Fig. 5 has shown the border of the crystal grain (crystal grain) in cross section shown in Figure 4.With reference to this figure, crystal grain approaches ellipse, as shown in Figure 6A.In Fig. 6 B, approximate ellipse has been exaggerated.Fig. 7 A and 7B have shown the size of the crystal grain in cross section shown in Figure 4.Fig. 7 A has shown the relation between particle size and their quantity, this relation that Fig. 7 B has then adopted graphic presentation.The size of each particle can be determined by calculating corresponding to the average of long axis of ellipse in Fig. 6 B and minor axis.In the cross section of Fig. 4, can observe the particle of a small amount of size, therefore in assessment, can ignore less than 25nm.
As shown in Fig. 7 A and 7B, most particle has the size of 60nm to 70nm.In these figure, 112 particle sizes that have greater than 30nm are arranged in the ellipse of 118 amplifications altogether, be about 95% (112/118 * 100).Similarly, 74 ellipses have greater than 60nm ground particle size, are about 62% (74/118 * 100).The digital average particle size of crystal is 69.55nm, and this is to calculate divided by above-mentioned total particle number (118) of discussing by the total particle size (8207.9nm) with the ellipse shown in Fig. 6 B.In addition, formed a small amount of particle less than the 25nm size.In other words, a kind of distribution structure of the layering that crystal grain constituted by aluminum-neodymium alloys is provided according to the method for the distribution structure of manufacturing layering of the present invention, aluminum-neodymium alloys has the particle size greater than 16.9nm, and this size is the mean free path of electronics in the aluminium.
Therefore the distribution structure of the layering that forms like this has the resistivity of 15 μ Ω cm immediately after deposition, and is 4.8 μ Ω cm after 350 ℃ of heating reach 30 minutes.
As the example of a reference, adopt neodymium content be the aluminum-neodymium alloys of 2% atomic percentage as target, be that 100 ℃, the pressure of the second spraying plating chamber are that the flow rate of 0.70Pa and argon gas is to form distribution under the condition of 200sccm at substrate temperature.In this case, the distribution structure of layering has the resistivity of 21.5 μ Ω cm immediately after deposition.This also points out to have reduced according to resistance in the distribution structure of the made layering of the process in above-mentioned example with reference to example.In addition, The above results also indicates pressure P at the spraying plating chamber less than 0.18/ (M 1/2Under * d) the condition, the resistance in the distribution structure of layering can descend significantly, thereby means that crystal can have big particle size under such condition.
In the above-described embodiment, the distribution structure of layering has sandwich construction, deposition first alloy-layer 116, first protective seam 110, second alloy-layer 118 and second protective seam 114 on the wiring layer 112 that low resistive metal is made.According to increasing crystalline size, first alloy-layer 116, first protective seam 110, second alloy-layer 118 or second protective seam 114 are all optional.
Fig. 8 A and 8B have shown another cross section (TEM photo) of above-mentioned driving power supply line 53.Shown in Fig. 8 A, first and second alloy-layers are respectively formed between first protective seam and the wiring layer and basically equably between the wiring layer and second protective seam.In Fig. 8 B, on the border between first protective seam and the wiring layer and the border between the wiring layer and second protective seam point out by dotted line.
Fig. 9 A and 9B have shown the result of metal ingredient in employing energy dispersive X-ray spectroscope (EDS) measurement second alloy-layer.Fig. 9 A has shown that Fig. 9 B has shown the metal ingredient in each position shown in Fig. 9 A near the sectional view of second alloy-layer.Shown in Fig. 9 B, there are the aluminium content of 80-90% atomic percentage, the molybdenum content of 7-15% atomic percentage and the neodymium content of 1-4% atomic percentage in the second alloy-layer zone.
In the TEM of Fig. 8 A photo, a contrast is clearly arranged between first and second alloy-layers.Therefore, its strong expression respectively in first and second alloy-layers, formed have with first protective seam that forms up and down at alloy-layer, wiring layer and the second protective seam different crystal structure in the middle of mutually.If do not form so middle phase, the crystal structure identical with metallic crystalline structure in these alloy-layers is blended between layer and bed interface, just can not obtain good like this contrast in the TEM photo.It has also confirmed the formation of middle phase.The EDS measurement result shows that in middle alpha region, aluminium, molybdenum and neodymium exist simultaneously, thereby it shows the formation of the middle phase that has formed these metals, promptly a kind of intermetallic compound.
Figure 10 is the binary phase diagraml (" the binary phase diagraml first volume " Thaddeus B.Massalski, American Society of Metals (ASM)) of aluminium and molybdenum.Just as shown in the drawing, the intermetallic compound of aluminium and aluminium can be, for example, and Mo3Al, MoAl, Mo37Al63, Mo3Al8, MoAl4, Mo4Al17, Mo5Al12, Mo5Al5, MoAl6 or MoAl12 or the like.These results mean that one of these intermetallic compounds form in first alloy-layer 116 and second alloy-layer 118.In addition, in the present embodiment, because wiring layer 112 is made of aluminum-neodymium alloys, so can form the intermetallic compound that contains neodymium.
The driving power supply line 53 of Xing Chenging is used for improving to burr/hillock afterwards like this, the adhesiveness that demonstrates in the technology of the drag of electromigration and stress migration.
Example as a reference, the distribution structure of layering is formed by the method for foregoing description, except depositing in room temperature (about 23 ℃) and need not heating substrate.Cross-section result among the TEM points out that the distribution structure of layering is improved in subsequent technique.
With reference to example, deposition is that pressure that the pressure at the first spraying plating chamber is about the 0.40Pa and the second spraying plating chamber is about under the condition of 0.70Pa and carries out as another.Similarly, the distribution structure that indicates layering of the cross-section result among the TEM is improved in subsequent technique.These results with reference to example have also confirmed to have improved the adhesiveness between wiring layer and the protective seam according to the distribution structure of the layering of present embodiment formation.These results show that also the pressure P when the spraying plating chamber is 0.18/ (M 1/2* d) or when lower, the centre can as one man form mutually.
Though the present invention is described by exemplary embodiment, should be understood that those skilled in the art can not break away from the scope of the present invention that is defined by claims and further make a lot of variations and alternative.

Claims (25)

1. the distribution structure of a layering is characterized in that comprising:
Wiring layer is made by at least a metal that contains in aluminium, copper and the silver; And,
Alloy-layer, mutually made by containing the metal that constitutes described wiring layer with centre near the refractoriness metal of wiring layer.
2. the distribution structure of layering as claimed in claim 1 is characterized in that also comprising:
Protective seam, made by the refractoriness metal, wherein, alloy-layer is formed between described wiring layer and the described protective seam, makes described alloy-layer approach described wiring layer and described protective seam.
3. the distribution structure of layering as claimed in claim 1 is characterized in that the refractoriness metal contains the element of 5A family or 6A family.
4. the distribution structure of layering as claimed in claim 1 is characterized in that the refractoriness metal contains the metal that its lattice types is body centred cubic (bcc).
5. the distribution structure of layering as claimed in claim 1 is characterized in that the refractoriness metal contains molybdenum.
6. the distribution structure of layering as claimed in claim 1 is characterized in that described wiring layer contains neodymium, and also contains neodymium mutually in the middle of described.
7. the distribution structure of layering as claimed in claim 1, the thickness that it is characterized in that described alloy-layer is 1nm to 50nm.
8. the distribution structure of layering as claimed in claim 1 is characterized in that described wiring layer is to be made by the aluminium alloy that contains lanthanide series, wherein the average particle size particle size of alloy crystal be 16.9nm or more than.
9. the distribution structure of layering as claimed in claim 1 is characterized in that described wiring layer is to be made by the aluminium alloy that contains lanthanide series, wherein the average grain of alloy crystal be of a size of 60nm or more than.
10. the distribution structure of layering as claimed in claim 1, it is characterized in that: described wiring layer is to be made by the aluminium alloy that contains lanthanide series, wherein total alloy crystal 90% or more than have 30nm or above particle size.
11. the distribution structure of layering as claimed in claim 8 is characterized in that described lanthanide series is a neodymium.
12. a wiring layer of making by the aluminium alloy that contains lanthanide series, the average particle size particle size that it is characterized in that alloy crystal be 16.9nm or more than.
13. the distribution structure of layering as claimed in claim 12, it is characterized in that described average particle size particle size be 60nm or more than.
14. the distribution structure of layering as claimed in claim 12, it is characterized in that constituting described wiring layer total alloy crystal 90% or more than have 30nm or above particle size.
15. the distribution structure as layering as described in the claim 12 is characterized in that described lanthanide series is a neodymium.
16. an optical device comprises:
The circuit that comprises the current drives optical element, and,
Be connected to the distribution structure of the layering of described circuit,
It is characterized in that the distribution structure of described layering comprises:
By at least a metal wiring layer that contains in aluminium, copper and the silver, and,
By containing the alloy-layer that make mutually the metal that constitutes described wiring layer and the centre of the refractoriness metal that approaches described wiring layer.
17. optical device as claimed in claim 16 is characterized in that the described wiring layer in the distribution structure of described layering is to be made by the aluminium alloy that contains lanthanide series, and the average particle size particle size of alloy crystal be 16.9nm or more than.
18. optical device as claimed in claim 16 is characterized in that comprising a plurality of described circuit, wherein, the distribution structure of described layering connects described a plurality of circuit, as the power lead to each described circuit supply.
19. an optical device comprises:
The circuit that comprises the current drives optical element, and,
Be connected to the distribution structure of the layering of described circuit,
It is characterized in that the distribution structure of described layering is to be made by the aluminium alloy that contains lanthanide series, wherein, the average particle size particle size of alloy crystal be 16.9nm or more than.
20. optical device as claimed in claim 19 is characterized in that comprising a plurality of described circuit, wherein, the distribution structure of described layering connects described a plurality of circuit, as the power lead to each described circuit supply.
21. a method of making the distribution structure of layering is characterized in that this method comprises:
Contain by employing that at least a metal carries out spraying plating as target in aluminium, copper and the silver, form wiring layer at the upper surface that is heated to 50 ℃ to 150 ℃ substrate, wherein, spraying plating is at 0.18/ (M 1/2* d) carry out under Pa or the lower reduced pressure, wherein, M is the atomic wts of metal target, d is the distance between substrate and target.
22. the method for the distribution structure of manufacturing layering as claimed in claim 21 is characterized in that described wiring layer is to adopt the alloy contain described metal and lanthanide series to form by spraying plating as target, and described spraying plating is to be at 0.18/ (M in spraying plating 1/2* d) carry out under Pa or the lower reduced pressure, wherein, M is the mean value of atomic percentage of atomic wts of composition metal of alloy or the minimum atomic wts of Main Ingredients and Appearance metal, and d is the distance between substrate and target.
23. the method for the distribution structure of manufacturing layering as claimed in claim 21 is characterized in that also comprising:
Before forming described wiring layer, adopt the metal that contains molybdenum to form protective seam by spraying plating at the upper surface that is heated to 50 ℃ to 150 ℃ substrate as target,
Wherein, in the process that forms described wiring layer, described wiring layer is formed on the described protective seam;
Described protective seam of described formation and the described wiring layer of described formation are at 0.18/ (M 1/2* d) carry out under Pa or the lower reduced pressure, wherein, M is the atomic wts of metal target, or when metal target is alloy, then be the mean value of atomic percentage of atomic wts of composition metal of alloy or the minimum atomic wts of Main Ingredients and Appearance metal, and d is the distance between substrate and the target; And,
The described wiring layer of described formation described substrate after the described protective seam of described formation is not exposed under the conditions of air and carries out.
24. the method for the distribution structure of manufacturing layering as claimed in claim 21 is characterized in that also comprising:
After forming described wiring layer, adopt the refractoriness metal that contains molybdenum in 150 ℃, on described wiring layer, to form protective seam by spraying plating substrate being heated to 50 ℃ as target,
Wherein, described protective seam of described formation and the described wiring layer of described formation are at 0.18/ (M 1/2* d) carry out under Pa or the lower reduced pressure, wherein, M is the atomic wts of metal target, or when metal target is alloy, then be the mean value of atomic percentage of atomic wts of composition metal of alloy or the minimum atomic wts of Main Ingredients and Appearance metal, and d is the distance between substrate and the target; And,
The described wiring layer of described formation described substrate after the described protective seam of described formation is not exposed under the conditions of air and carries out.
25. the method for the distribution structure of manufacturing layering as claimed in claim 21 is characterized in that after having carried out described spraying plating, the distribution structure of described layering is from being heated to 450 ℃ in heating of substrate temperature described in the spraying plating processing procedure.
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