JP2002318553A - Luminous display device - Google Patents
Luminous display deviceInfo
- Publication number
- JP2002318553A JP2002318553A JP2001122884A JP2001122884A JP2002318553A JP 2002318553 A JP2002318553 A JP 2002318553A JP 2001122884 A JP2001122884 A JP 2001122884A JP 2001122884 A JP2001122884 A JP 2001122884A JP 2002318553 A JP2002318553 A JP 2002318553A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic
- display device
- display
- auxiliary wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005192 partition Methods 0.000 claims description 5
- 239000000284 extract Substances 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- -1 polyparaphenylene vinylene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、自己発光型表示
装置に係り、特に、各表示素子にスイッチング素子が設
けられたアクティブマトリクス型自己発光型表示装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a self-luminous display device, and more particularly to an active matrix self-luminous display device having a switching element for each display element.
【0002】[0002]
【従来の技術】有機EL表示装置は、液晶表示装置と比
較して、高速応答、広視野角、薄型軽量といった特徴を
有する自己発光型表示装置である。有機EL表示装置に
おいては、支持基板、例えばガラス基板上に有機EL素
子を多数配列してEL発光により文字や画像を表示させ
ている。EL発光を外部に取り出す方式として、下面発
光方式と上面発光方式とが提案されている。2. Description of the Related Art An organic EL display device is a self-luminous display device having characteristics such as high-speed response, a wide viewing angle, and a thin and light weight as compared with a liquid crystal display device. In an organic EL display device, a large number of organic EL elements are arranged on a support substrate, for example, a glass substrate, and characters and images are displayed by EL light emission. As a method of extracting EL light emission to the outside, a bottom emission method and a top emission method have been proposed.
【0003】下面発光方式の有機EL表示装置では、ガ
ラス基板上に光透過性を有する下部電極、有機発光層、
上部電極を順次積層して有機EL素子を構成し、EL発
光は、ガラス基板側から取り出す。この下面発光方式の
有機EL表示装置は、比較的製作が容易であるものの、
次のような欠点を有する。In a bottom emission type organic EL display device, a light-transmitting lower electrode, an organic light emitting layer,
An organic EL element is formed by sequentially laminating upper electrodes, and EL light emission is extracted from the glass substrate side. Although this bottom emission type organic EL display device is relatively easy to manufacture,
It has the following disadvantages.
【0004】すなわち、その欠点とは、有機EL素子を
支持基板に形成されたポリシリコン薄膜トランジスタな
どのTFT回路でアクティブ駆動する場合に特に顕著で
あって、EL発光の透過を阻止する下地回路が配置され
るため、十分な開口率を確保することが難しくなること
である。[0004] That is, the disadvantage is particularly remarkable when the organic EL element is actively driven by a TFT circuit such as a polysilicon thin film transistor formed on a supporting substrate, and an underlying circuit for preventing transmission of EL light is disposed. Therefore, it is difficult to secure a sufficient aperture ratio.
【0005】開口率が小さくなるにしたがい、所望のパ
ネル正面輝度を得るために必要な有機EL素子の駆動電
流密度は高くなる。駆動電流密度Jは、有機EL素子の
輝度半減寿命τと密接に関連しており、経験的には以下
の式に従う。[0005] As the aperture ratio becomes smaller, the driving current density of the organic EL element required for obtaining a desired panel front luminance increases. The driving current density J is closely related to the luminance half life τ of the organic EL element, and empirically follows the following equation.
【0006】τ∝1/J (1) 式(1)は、駆動電流密度が増すほど有機EL素子の輝
度劣化が早く進むことを示している。有機EL素子の信
頼性すなわち寿命を長くするためには、駆動電流密度を
下げることが必要不可欠であるが、下面発光方式では、
開口率確保が難しい。Τ∝1 / J (1) Equation (1) shows that the higher the drive current density, the faster the luminance degradation of the organic EL element progresses. In order to extend the reliability, that is, the life of the organic EL element, it is essential to lower the drive current density.
It is difficult to secure the aperture ratio.
【0007】これに対して、上面発光方式の有機EL表
示装置では、ガラス基板上に下部電極、有機発光層、光
透過性を有する上部電極を順次積層して有機EL素子を
構成し、EL発光は、下地回路の形成される支持基板の
反対側すなわち上部電極側から取り出す。この上面発光
方式の有機EL表示装置は、下地回路の占有面積に制約
されず、有機EL素子の開口率を確保できる。On the other hand, in a top emission type organic EL display device, a lower electrode, an organic light emitting layer, and an upper electrode having a light transmitting property are sequentially laminated on a glass substrate to constitute an organic EL element. Is taken out from the opposite side of the supporting substrate on which the underlying circuit is formed, that is, from the upper electrode side. In the top emission type organic EL display device, the aperture ratio of the organic EL element can be secured without being limited by the area occupied by the underlying circuit.
【0008】所望のパネル正面輝度を得るために必要な
駆動電流密度は、下面発光方式の1/7乃至1/6で十
分である。したがって、上面発光方式の有機EL素子の
寿命を、下面発光方式の6乃至7倍に延長することがで
き、表示装置としての性能の信頼性を向上することが可
能となる。The drive current density required to obtain a desired panel front luminance is sufficient to be 1/7 to 1/6 of the bottom emission type. Therefore, the lifetime of the top emission type organic EL element can be extended to 6 to 7 times that of the bottom emission type, and the reliability of performance as a display device can be improved.
【0009】しかしながら、上面発光方式に必須の上部
電極の光透過性導電材料は、通常の金属材料と比較して
抵抗率が2乃至3桁程度高い欠点を有する。このため、
上部電極の抵抗に起因して上部電極電圧が画面面内で不
均一となることがある。このことは、画像を表示する表
示エリアのサイズが拡大するほど顕著であり、例えば、
上部電極の電源供給線に近い周辺部では、比較的電圧降
下が小さく、電源供給線から離れる上部電極の中央部で
は、比較的電圧降下が大きい、といった現象が発生す
る。このような現象が発生すると、極端な場合、表示エ
リア周辺部のみ明るく光り、表示品位が著しく損なわれ
てしまうおそれがある。However, the light-transmitting conductive material of the upper electrode, which is indispensable for the top emission method, has a drawback that the resistivity is higher by about two to three orders of magnitude than the ordinary metal material. For this reason,
The upper electrode voltage may be non-uniform in the screen due to the resistance of the upper electrode. This is more remarkable as the size of the display area for displaying an image increases, for example,
A phenomenon occurs in which the voltage drop is relatively small in the peripheral portion of the upper electrode close to the power supply line, and relatively large in the central portion of the upper electrode far from the power supply line. When such a phenomenon occurs, in an extreme case, only the periphery of the display area shines brightly, and the display quality may be significantly impaired.
【0010】[0010]
【発明が解決しようとする課題】上述したように、上面
発光方式の自己発光型表示装置では、上部電極の抵抗が
高くなることに起因して、表示エリア面内で上部電極電
圧が不均一となり、表示品質の低下を招くおそれがあ
る。As described above, in the top emission type self-luminous display device, the upper electrode voltage becomes non-uniform in the display area surface due to the increase in the resistance of the upper electrode. The display quality may be degraded.
【0011】この発明は、上述した問題点に鑑みなされ
たものであって、その目的は、表示ムラの発生を抑制
し、表示品位を向上することが可能な自己発光型表示装
置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-described problems, and has as its object to provide a self-luminous display device capable of suppressing display unevenness and improving display quality. It is in.
【0012】[0012]
【課題を解決するための手段】上記課題を解決し目的を
達成するために、請求項1に記載の自己発光型表示装置
は、基板上に配置される複数の信号線と、前記信号線に
略直交して配置される複数の走査線と、これら交点付近
に配置されるスイッチング素子と、前記スイッチング素
子に接続され第1電極及び第2電極間に独立島状に形成
される発光層を備えた表示素子と、がマトリクス状に配
置される自己発光型表示装置において、前記第1電極
は、前記表示素子毎に独立に形成され、前記第2電極
は、前記表示素子に共通に形成されており、前記第1電
極に電気的に絶縁され、且つ前記第2電極と電気的に接
続された補助配線とを含むことを特徴とする。According to a first aspect of the present invention, there is provided a self-luminous display device comprising: a plurality of signal lines disposed on a substrate; A plurality of scanning lines arranged substantially orthogonally, a switching element arranged near the intersection, and a light emitting layer connected to the switching element and formed in an independent island between the first electrode and the second electrode are provided. And the display elements are arranged in a matrix, the first electrode is independently formed for each of the display elements, and the second electrode is commonly formed for the display elements. And an auxiliary wiring electrically insulated by the first electrode and electrically connected to the second electrode.
【0013】[0013]
【発明の実施の形態】以下、この発明の自己発光型表示
装置の一実施の形態について有機EL表示装置を例にと
り図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the self-luminous display device of the present invention will be described below with reference to the drawings, taking an organic EL display device as an example.
【0014】図1は、この発明の一実施の形態にかかる
有機EL表示装置の構成を概略的に示す回路図である。FIG. 1 is a circuit diagram schematically showing a configuration of an organic EL display device according to one embodiment of the present invention.
【0015】図1に示すように、有機EL表示装置1
は、アレイ基板100を備えている。このアレイ基板1
00は、画像を表示する表示エリア102を有してい
る。この表示エリア102は、例えば対角10.4型
(対角10.4インチ)のサイズを有し、その精細度
は、150ppi(pixel per inch)で
ある。実際の有機EL表示装置では、表示エリア102
に赤、緑、青にそれぞれ発光する3種類の発光部すなわ
ち有機EL素子40を備えて構成されるが、ここでは、
簡略化するために、1種類の有機EL素子40のみを図
示している。As shown in FIG. 1, an organic EL display 1
Has an array substrate 100. This array substrate 1
00 has a display area 102 for displaying an image. The display area 102 has a size of, for example, a 10.4 inch diagonal (10.4 inch diagonal), and its definition is 150 ppi (pixel per inch). In an actual organic EL display device, the display area 102
Are provided with three types of light-emitting portions for emitting red, green, and blue light, that is, an organic EL element 40.
For simplicity, only one type of organic EL element 40 is shown.
【0016】有機EL素子40は、素子毎に独立島状に
形成される第1電極と、第1電極に対向して配置され各
素子に共通に形成される第2電極と、これら電極間に保
持される発光層としての有機発光層と、によって構成さ
れる。The organic EL element 40 has a first electrode formed in an independent island shape for each element, a second electrode arranged opposite to the first electrode and formed in common for each element, and a space between these electrodes. And an organic light-emitting layer as a light-emitting layer to be held.
【0017】このアレイ基板100は、表示エリア10
2において、2つの薄膜トランジスタすなわちTFT1
0及び20と、蓄積容量素子30と、有機EL素子40
とを備えている。有機EL素子40は、スイッチング素
子としてのTFT10を介して選択され、有機EL素子
40に対する励起電力は、TFT20により制御され
る。The array substrate 100 has a display area 10
2, two thin film transistors, ie, TFT1
0 and 20, the storage capacitor element 30, and the organic EL element 40
And The organic EL element 40 is selected via the TFT 10 as a switching element, and the excitation power for the organic EL element 40 is controlled by the TFT 20.
【0018】また、アレイ基板100は、有機EL素子
40の行方向に沿って配置された複数の走査線Yと、有
機EL素子40の列方向に沿って配置された複数の信号
線Xと、有機EL素子40の第1電極側に電源を供給す
るための電源供給線Pと、を備えている。さらに、アレ
イ基板100は、その周辺エリア104に、走査線Yに
駆動信号を供給する走査線駆動回路106と、信号線X
に駆動信号を供給する信号線駆動回路108と、を備え
ている。The array substrate 100 includes a plurality of scanning lines Y arranged along the row direction of the organic EL elements 40, a plurality of signal lines X arranged along the column direction of the organic EL elements 40, And a power supply line P for supplying power to the first electrode side of the organic EL element 40. Further, the array substrate 100 includes a scanning line driving circuit 106 for supplying a driving signal to the scanning lines Y and a signal line X in its peripheral area 104.
And a signal line drive circuit 108 for supplying a drive signal to the signal line.
【0019】走査線Yは、走査線駆動回路106に接続
され、信号線Yは、信号線駆動回路108に接続されて
いる。TFT10は、走査線Yと信号線Xとの交差部近
傍に配置されている。TFT20は、有機EL素子40
と直列に接続されている。また、蓄積容量素子30は、
TFT10と直列に、且つTFT20と並列に接続され
ている。The scanning line Y is connected to a scanning line driving circuit 106, and the signal line Y is connected to a signal line driving circuit 108. The TFT 10 is arranged near an intersection between the scanning line Y and the signal line X. The TFT 20 includes an organic EL element 40
And are connected in series. Further, the storage capacitor element 30
It is connected in series with the TFT 10 and in parallel with the TFT 20.
【0020】電源供給線Pは、表示エリア102の周囲
に配置された第1電極電源線110に接続されている。
有機EL素子40の第2電極側端は、表示エリア102
の周囲に配置されコモン電位すなわち接地電位を供給す
る第2電極電源線112に接続されている。The power supply line P is connected to a first electrode power supply line 110 arranged around the display area 102.
The second electrode side end of the organic EL element 40 is connected to the display area 102.
Are connected to a second electrode power supply line 112 which is arranged around the first electrode and supplies a common potential, that is, a ground potential.
【0021】より詳細に説明すると、TFT10のゲー
ト電極は、走査線Yに接続され、ソース電極は、信号線
Xに接続され、ドレイン電極は、蓄積容量素子30の一
端及びTFT20のゲート電極に接続されている。TF
T20のソース電極は、電源供給線Pに接続され、ドレ
イン電極は、有機EL素子40の下部電極に接続されて
いる。蓄積容量素子30の他端は、電源供給線Pに接続
されている。More specifically, the gate electrode of the TFT 10 is connected to the scanning line Y, the source electrode is connected to the signal line X, and the drain electrode is connected to one end of the storage capacitor 30 and the gate electrode of the TFT 20. Have been. TF
The source electrode of T20 is connected to the power supply line P, and the drain electrode is connected to the lower electrode of the organic EL element 40. The other end of the storage capacitor 30 is connected to the power supply line P.
【0022】TFT10は、対応走査線Yを介して選択
されたときに対応信号線Xの駆動信号をTFT20及び
蓄積容量素子30に書き込み、TFT20の駆動を制御
する。駆動信号に基づいてTFT20のゲート電圧を調
整し、電源供給線Pから有機EL素子40に所望の駆動
電流を供給する。When the TFT 10 is selected via the corresponding scanning line Y, the driving signal of the corresponding signal line X is written into the TFT 20 and the storage capacitor 30 to control the driving of the TFT 20. The gate voltage of the TFT 20 is adjusted based on the drive signal, and a desired drive current is supplied to the organic EL element 40 from the power supply line P.
【0023】図2は、図1に示した有機EL表示装置の
構造を概略的に示す断面図であり、ここでは、特に1画
素分の有機EL素子の構造を示している。FIG. 2 is a sectional view schematically showing the structure of the organic EL display device shown in FIG. 1. Here, the structure of an organic EL element for one pixel is particularly shown.
【0024】図2に示すように、アレイ基板100にお
いて、支持基板120としてのガラス基板などの絶縁性
基板上には、ポリシリコンTFT20などが集積されて
いる。このTFT20は、支持基板120上に配置され
たポリシリコン半導体層20Pと、第1絶縁膜52を介
して配置されたゲート電極20Gと、第1絶縁膜52及
び第2絶縁膜54を介してポリシリコン半導体層20P
のソース領域にコンタクトしたソース電極20Sと、第
1絶縁膜52及び第2絶縁膜54を介してポリシリコン
半導体層20Pのドレイン領域にコンタクトしたドレイ
ン電極20Dと、を備えている。As shown in FIG. 2, in the array substrate 100, a polysilicon TFT 20 and the like are integrated on an insulating substrate such as a glass substrate as a support substrate 120. The TFT 20 has a polysilicon semiconductor layer 20P disposed on a support substrate 120, a gate electrode 20G disposed via a first insulating film 52, and a polycrystalline silicon via a first insulating film 52 and a second insulating film 54. Silicon semiconductor layer 20P
And a drain electrode 20D in contact with the drain region of the polysilicon semiconductor layer 20P via the first insulating film 52 and the second insulating film 54.
【0025】有機EL素子40は、第2絶縁膜54上に
配置された第3絶縁膜56上に配置されている。1画素
分の有機EL素子40は、格子状に配置された隔壁13
0によって区画されている。この有機EL素子40は、
第1電極を透明導電材料であるITOを用いて陽極と
し、反射金属層60を備えて構成されている。The organic EL element 40 is disposed on a third insulating film 56 disposed on the second insulating film 54. The organic EL element 40 for one pixel includes the partition walls 13 arranged in a grid.
It is partitioned by 0. This organic EL element 40
The first electrode is formed as an anode using ITO as a transparent conductive material, and includes a reflective metal layer 60.
【0026】すなわち、金属反射層60は、第3絶縁膜
56上に配置され、TFT20のドレイン電極20Dに
接続されている。この金属反射層60は、アルミニウム
とモリブデンとを積層するなどの遮光性の金属によって
形成されている。このように、反射金属層60上に配置
される第1電極が、ITO(Indium TinOx
ide:インジウム・ティン・オキサイド)やIZO
(インジウム・ジンク・オキサイド)などの透明導電性
部材によって形成される場合には、EL発光が第1電極
側に漏れるのを抑制するため、金属反射層60を備える
ことが望ましい。また、陽極(第1電極)にPd(パラ
ジウム)、Pt(白金)、Au(金)などの光反射性を
有する貴金属材料を用いる場合には、金属反射層を省略
しても良い。That is, the metal reflection layer 60 is disposed on the third insulating film 56 and is connected to the drain electrode 20D of the TFT 20. The metal reflection layer 60 is formed of a light-shielding metal such as a laminate of aluminum and molybdenum. Thus, the first electrode disposed on the reflective metal layer 60 is made of ITO (Indium TinOx).
ide: indium tin oxide) or IZO
When formed of a transparent conductive member such as (indium / zinc / oxide), it is desirable to provide the metal reflection layer 60 in order to suppress leakage of EL light emission to the first electrode side. When a noble metal material having light reflectivity such as Pd (palladium), Pt (platinum), or Au (gold) is used for the anode (first electrode), the metal reflection layer may be omitted.
【0027】有機発光層64は、下部に配置された第1
電極62と、上部に配置された第2電極66との間に挟
持されている。なお、有機発光層64は、各色共通に形
成されるホール輸送層、エレクトロン輸送層、及び各色
毎に形成される発光層の3層積層で構成されても良く、
機能的に複合された2層または単層で構成されても良
い。例えば、ホール輸送層は、陽極(第1電極)62上
に配置され、芳香族アミン誘導体やポリチオフェン誘導
体、ポリアニリン誘導体などの薄膜によって形成されて
いる。発光層は、ホール輸送層上に配置され、赤、緑、
または青に発光する有機化合物によって形成されてい
る。この発光層は、例えば高分子系材料を採用する場合
には、PPV(ポリパラフェニレンビニレン)やポリフ
ルオレン誘導体またはその前駆体などを積層して構成さ
れている。The organic light emitting layer 64 has a first
It is sandwiched between the electrode 62 and the second electrode 66 disposed on the upper part. In addition, the organic light emitting layer 64 may be configured by a three-layer stack of a hole transport layer, an electron transport layer, and a light emitting layer formed for each color, which are formed in common for each color.
It may be composed of two layers or a single layer functionally combined. For example, the hole transport layer is disposed on the anode (first electrode) 62 and is formed by a thin film of an aromatic amine derivative, a polythiophene derivative, a polyaniline derivative, or the like. The light emitting layer is disposed on the hole transport layer, and the red, green,
Alternatively, it is formed of an organic compound that emits blue light. For example, when a high molecular material is used, the light emitting layer is formed by laminating PPV (polyparaphenylene vinylene), a polyfluorene derivative, or a precursor thereof.
【0028】第2電極66は、有機発光層64上に各有
機EL素子に共通に配置され、光透過性を有する導電膜
によって形成されている。ここでは、第2電極を陰極と
するので、例えばCa(カルシウム)を光透過性を有す
る程度に薄く、およそ30nmの厚さで形成する。な
お、Ca上にITOなどの透明導電膜を積層しても良
い。The second electrode 66 is disposed on the organic light emitting layer 64 in common with each organic EL element, and is formed of a light-transmitting conductive film. Here, since the second electrode is used as a cathode, for example, Ca (calcium) is formed to be thin enough to have optical transparency and to have a thickness of about 30 nm. Note that a transparent conductive film such as ITO may be stacked on Ca.
【0029】このように構成された有機EL素子40で
は、第1電極62と第2電極66との間に挟持された有
機発光層64に電子及びホールを注入し、これらを再結
合させることにより励起子を生成し、この励起子の失活
時に生じる所定波長の光放出により発光する。このEL
発光は、アレイ基板100の表示面側すなわち第2電極
66側から出射される。In the organic EL device 40 thus configured, electrons and holes are injected into the organic light emitting layer 64 sandwiched between the first electrode 62 and the second electrode 66, and these are recombined. An exciton is generated, and light is emitted by light emission of a predetermined wavelength generated when the exciton is deactivated. This EL
Light emission is emitted from the display surface side of the array substrate 100, that is, from the second electrode 66 side.
【0030】ところで、上述したように、支持基板と対
向する側を表示面とする上面発光方式の有機EL表示装
置1においては、第2電極66側からEL発光を出射さ
せる必要がある。このため、第2電極66は、光透過性
を有する導電性部材によって形成される。この光透過性
導電性部材は、材料自体の透明度が高い透明導電材料を
用いて形成するか、あるいは、材料自体の透明度の低い
材料を薄く形成して透過性を持たせるように形成するこ
とができる。As described above, in the top emission type organic EL display device 1 having the display surface on the side facing the support substrate, it is necessary to emit EL light from the second electrode 66 side. For this reason, the second electrode 66 is formed of a light-transmissive conductive member. This light-transmitting conductive member may be formed using a transparent conductive material having a high transparency of the material itself, or may be formed so as to have a transparency by forming a material having a low transparency of the material itself. it can.
【0031】上述した実施の形態では、第2電極を陰極
とし、その材料にCaを用いる場合について説明した
が、これに限定されず、アルカリ土類金属や、アルカリ
金属、希土類金属などを用いても良い。In the above-described embodiment, the case where the second electrode is a cathode and Ca is used as the material has been described. However, the present invention is not limited to this, and an alkaline earth metal, an alkali metal, a rare earth metal, or the like may be used. Is also good.
【0032】このような光透過性導電性部材をシート状
に成膜する第2電極として適用した場合、表示エリア1
02面内で電位が異なり、表示ムラなどの表示不良を発
生するおそれがある。When such a light-transmitting conductive member is applied as a second electrode for forming a film in a sheet shape, the display area 1
The potential is different in the 02 plane, and display defects such as display unevenness may occur.
【0033】そこで、この実施の形態に係る有機EL表
示装置1では、有機EL素子40の第2電極66と、電
気的に接続され、表示エリア102に配置された補助配
線70とを備えている。この補助配線70は、図2及び
図4に示すように、表示エリア102における各画素を
電気的に分離する隔壁130上に、隣接する表示素子を
連結して配置されている。Therefore, the organic EL display device 1 according to the present embodiment includes the second electrode 66 of the organic EL element 40 and the auxiliary wiring 70 electrically connected to the display area 102. . As shown in FIGS. 2 and 4, the auxiliary wiring 70 is arranged on a partition 130 that electrically separates each pixel in the display area 102 by connecting adjacent display elements.
【0034】また、各補助配線70は、図3に示すよう
に、第2電極66に電源を供給するための第2電極電源
線112に共通に電気的に接続され、表示エリアにわた
り互いに連結されている。これにより、補助配線70に
は、第2電極66と同様に、接地電位が供給される。Further, as shown in FIG. 3, each auxiliary wiring 70 is electrically connected to a second electrode power supply line 112 for supplying power to the second electrode 66, and is connected to each other over a display area. ing. As a result, the ground potential is supplied to the auxiliary wiring 70 as in the case of the second electrode 66.
【0035】この補助配線70は、図4に示すように、
アルミニウム(Al)をモリブデン(Mo)でサンドイ
ッチしたMAM構造(Mo/Al/Mo)で形成されて
いる。このMAM構造補助配線70の抵抗率は、約3μ
Ωcmである。また、少なくともその一部が補助配線7
0の上に積層配置された第2電極66をCa/ITOに
よって形成した場合、その抵抗率は、実測で約500μ
Ωcmであって、MAM構造補助配線70と比較して2
桁強の大きな値を示した。As shown in FIG. 4, the auxiliary wiring 70
It is formed of a MAM structure (Mo / Al / Mo) in which aluminum (Al) is sandwiched by molybdenum (Mo). The resistivity of the MAM structure auxiliary wiring 70 is about 3 μm.
Ωcm. In addition, at least a part thereof is the auxiliary wiring 7.
In the case where the second electrode 66 laminated on the first electrode 66 is formed of Ca / ITO, the resistivity thereof is about 500 μm by actual measurement.
Ωcm, which is 2
It showed a value of an order of magnitude higher.
【0036】なお、上述した実施の形態では、補助配線
70をMAM構造で構成したが、他の金属材料で構成し
ても良い。例えば、補助配線70は、アルミニウム、銅
(抵抗率:1.7μΩcm)、金(抵抗率:2.4μΩ
cm)、銀、チタン(抵抗率:5.0μΩcm)、タン
グステン(抵抗率:5.6μΩcm)などの金属単体膜
や、銀・パラジウム・銅(抵抗率:2.2μΩcm)、
アルミニウム・ネオジウム(抵抗率:4.7μΩc
m)、アルミニウム・パラジウム・銅などの合金膜、も
しくは、それらを少なくとも1層含む多層膜のいずれか
で形成しても良い。In the above-described embodiment, the auxiliary wiring 70 has the MAM structure, but may be made of another metal material. For example, the auxiliary wiring 70 is made of aluminum, copper (resistivity: 1.7 μΩcm), gold (resistivity: 2.4 μΩ).
cm), silver, titanium (resistivity: 5.0 μΩcm), tungsten (resistivity: 5.6 μΩcm), or a single metal film such as silver, palladium, copper (resistivity: 2.2 μΩcm),
Aluminum neodymium (resistivity: 4.7μΩc
m), an alloy film of aluminum, palladium, copper, or the like, or a multilayer film containing at least one layer thereof.
【0037】このような補助配線70は、第2電極66
の局部的な電圧降下を防止するために、図3及び図4に
示したように、すべての有機EL素子40ごとの画素を
囲むように格子状に配置されることが望ましい。このよ
うに配置された補助配線70に電気的に接続する第2電
極66を配置することにより、上部電極66の抵抗によ
る画面面内の電圧ばらつきが抑制され、表示エリア10
2の全域にわたって均一な上部電極電位を供給すること
が可能となる。したがって、表示ムラの発生を抑制し、
表示品位を向上することが可能となる。The auxiliary wiring 70 is formed on the second electrode 66
In order to prevent the local voltage drop, it is preferable that the organic EL elements 40 are arranged in a lattice shape so as to surround all the pixels of each organic EL element 40 as shown in FIGS. By arranging the second electrode 66 electrically connected to the auxiliary wiring 70 arranged as described above, voltage variation in the screen surface due to the resistance of the upper electrode 66 is suppressed, and the display area 10
2 can supply a uniform upper electrode potential over the entire region. Therefore, the occurrence of display unevenness is suppressed,
The display quality can be improved.
【0038】さらに、補助配線を第2電極と比して、抵
抗が小さくなるように形成すれば、上部電極の画面面内
での電位ばらつきをより一層低減することができる。Further, if the auxiliary wiring is formed so as to have a lower resistance than the second electrode, it is possible to further reduce the variation in potential of the upper electrode in the screen.
【0039】なお、上述した実施の形態では、補助配線
70は、すべての画素を囲むように格子状に配置した
が、必ずしもこの例に限定されるものではない。例え
ば、第2電極66の抵抗は、第2電極電源線112に近
い表示エリア102の周辺部より第2電極電源線112
から離れた表示エリア102の中央部の方が高い傾向に
ある場合には、例えば図5に示すように、補助配線70
を、表示エリア102の中央部に相対的に密に配置し、
表示エリア102の周辺部に相対的に疎に配置しても上
述した実施の形態と同様の効果を得ることができる。In the above-described embodiment, the auxiliary wirings 70 are arranged in a grid shape so as to surround all the pixels, but are not necessarily limited to this example. For example, the resistance of the second electrode 66 is higher than the resistance of the second electrode power line 112 from the periphery of the display area 102 near the second electrode power line 112.
If the center of the display area 102 distant from the display area tends to be higher, for example, as shown in FIG.
Are relatively densely arranged in the center of the display area 102,
The same effect as in the above-described embodiment can be obtained even when the display area 102 is relatively sparsely arranged around the display area 102.
【0040】この図5に示した例では、補助配線70
は、各画素間に直線的に配置されたが、図6に示すよう
に、補助配線70を円弧状に配置しても良い。このとき
も、図5に示した例と同様に、補助配線70を、表示エ
リア102の中央部に相対的に密に配置し、表示エリア
102の周辺部に相対的に疎に配置しても上述した実施
の形態と同様の効果を得ることができる。In the example shown in FIG.
Are arranged linearly between the pixels, but the auxiliary wiring 70 may be arranged in an arc shape as shown in FIG. Also at this time, similarly to the example shown in FIG. 5, even if the auxiliary wirings 70 are arranged relatively densely at the center of the display area 102 and relatively sparsely arranged around the peripheral area of the display area 102. An effect similar to that of the above-described embodiment can be obtained.
【0041】また、上述した実施の形態においては、第
1電極をITOで形成し、第2電極をCa/ITOで形
成する場合について述べたが、これに限定されず、電極
の極性に合わせて最適な材料を選択することが望まし
い。例えば、第1電極を陰極としてBa(バリウム)で
形成し、第2電極を陽極としてITOで形成することが
できる。Further, in the above-described embodiment, the case where the first electrode is formed of ITO and the second electrode is formed of Ca / ITO has been described. However, the present invention is not limited to this. It is desirable to select the optimal material. For example, the first electrode can be formed of Ba (barium) as a cathode, and the second electrode can be formed of ITO as an anode.
【0042】さらに、補助配線70として、金属材料上
にITOを積層した積層構造を用いれば、補助配線70
上に積層される透明導電性部材によって形成される第2
電極66との密着性が向上し、有機EL表示装置として
の信頼性を向上することができる。このように、補助配
線の最上層材料と第2電極材料とを同一材料で形成する
と、補助配線と第2電極との密着性を向上させることが
できる。Further, if a laminated structure in which ITO is laminated on a metal material is used as the auxiliary wiring 70,
A second layer formed by a transparent conductive member laminated thereon;
Adhesion with the electrode 66 is improved, and reliability as an organic EL display device can be improved. When the uppermost layer material of the auxiliary wiring and the second electrode material are formed of the same material, the adhesion between the auxiliary wiring and the second electrode can be improved.
【0043】次に、この発明の有機EL表示装置におけ
るパネル正面輝度の測定結果について説明する。Next, the measurement results of the front luminance of the panel in the organic EL display device of the present invention will be described.
【0044】すなわち、図7は、図5に示した構造のア
レイ基板100を有する有機EL表示装置においてA−
A軸上に沿って測定したパネル正面輝度のプロット結果
である。なお、このパネル正面輝度は、分光輝度計を用
いて測定した。この輝度測定に際し、分光輝度計のスポ
ット径には、0.7mmを用いた。したがって、パネル
正面輝度の空間分解能は、0.7mmである。また、駆
動電流は、パネル正面輝度が200cd/m2となるよ
うに調整した。That is, FIG. 7 shows an organic EL display device having the array substrate 100 having the structure shown in FIG.
It is a plot result of panel front luminance measured along the A-axis. The panel front luminance was measured using a spectral luminance meter. In measuring the luminance, 0.7 mm was used as the spot diameter of the spectral luminance meter. Therefore, the spatial resolution of the panel front luminance is 0.7 mm. The drive current was adjusted so that the panel front luminance was 200 cd / m 2 .
【0045】図7に示すように、上述した構造の有機E
L表示装置においては、A−A軸上に沿った輝度分布
は、表示エリア102の全域にわたって200cd/m
2を中心に±3cd/m2以内におさまり、32階調の
表示が可能なことが確認された。As shown in FIG. 7, the organic E
In the L display device, the luminance distribution along the AA axis is 200 cd / m over the entire display area 102.
It was confirmed that it was within ± 3 cd / m 2 centered at 2, and that 32 gradations could be displayed.
【0046】これに対して、比較例として、補助配線7
0を一切配置せずに構成した有機EL表示装置におい
て、同様にパネル正面輝度を測定した。On the other hand, as a comparative example, the auxiliary wiring 7
In the organic EL display device configured without any 0, the front luminance of the panel was measured in the same manner.
【0047】図8は、比較例としての有機EL表示装置
において測定したパネル正面輝度のプロット結果であ
る。測定条件は、上述した場合と同一である。図8に示
すように、この比較例では、表示エリア102の周辺部
では、ほぼ200cd/m2の輝度を示しているが、表
示エリア102の中央部では、約160cd/m2の輝
度まで減少していることが確認された。FIG. 8 is a plot of panel front luminance measured in an organic EL display device as a comparative example. The measurement conditions are the same as those described above. As shown in FIG. 8, in the comparative example, the luminance of approximately 200 cd / m 2 is shown in the peripheral portion of the display area 102, but the luminance is reduced to approximately 160 cd / m 2 in the central portion of the display area 102. It was confirmed that.
【0048】これらの測定結果から、上面発光方式の有
機EL表示装置においては、接地電位である第2電極に
低抵抗な補助配線を付加することにより、第2電極の局
部的な電圧降下を防止することが可能となり、表示ムラ
の少ない高品位な表示性能を実現することができる。From these measurement results, in the top emission type organic EL display device, a local resistance drop of the second electrode is prevented by adding a low resistance auxiliary wiring to the second electrode which is at the ground potential. And high-quality display performance with little display unevenness can be realized.
【0049】上述したように、この発明の有機EL表示
装置によれば、支持基板上に回路素子を集積し、この回
路素子上に有機EL素子を配置し、支持基板と対向する
側に透過性を有する電極を配置して、EL発光をこの光
透過性電極から取り出している。このような上面発光方
式を採用したことにより、回路素子の占有面積にかかわ
らず、高い開口率を確保することが可能となる。As described above, according to the organic EL display device of the present invention, the circuit elements are integrated on the support substrate, the organic EL elements are arranged on the circuit elements, and the light-transmitting side is provided on the side facing the support substrate. And the EL emission is extracted from the light-transmitting electrode. By employing such a top emission method, it is possible to secure a high aperture ratio regardless of the area occupied by the circuit element.
【0050】このため、所望のパネル正面輝度を確保す
るために、必要以上に有機EL素子の駆動電流密度を高
くする必要がなくなる。この結果、有機EL素子の寿命
を長くすることが可能となり、表示装置としての性能の
信頼性を向上することが可能となる。Therefore, it is not necessary to increase the drive current density of the organic EL element more than necessary in order to secure a desired panel front luminance. As a result, the life of the organic EL element can be extended, and the reliability of performance as a display device can be improved.
【0051】また、上部電極を光透過性導電部材によっ
て構成した場合には、その抵抗率が一般的な金属より高
くなり、表示エリアにおいて局部的に電圧降下が発生す
るおそれがあるが、少なくとも抵抗が高い領域に、補助
配線を配置している。この補助配線は、第2電極に電源
を供給するための電源供給線に電気的に接続されてお
り、補助配線と第2電極とは、同電位となる。このた
め、表示エリアの全域において、上部電極の電位のばら
つきを抑制することが可能となり、表示ムラの発生を抑
制し、表示品位を向上することが可能となる。When the upper electrode is made of a light-transmitting conductive member, its resistivity is higher than that of a general metal, and there is a possibility that a local voltage drop occurs in the display area. The auxiliary wiring is arranged in a region where the height is high. The auxiliary wiring is electrically connected to a power supply line for supplying power to the second electrode, and the auxiliary wiring and the second electrode have the same potential. For this reason, it is possible to suppress the variation in the potential of the upper electrode in the entire display area, suppress the occurrence of display unevenness, and improve the display quality.
【0052】なお、この発明は、上述した実施の形態だ
けに限定されるものではなく、その要旨を逸脱しない範
囲で様々に変形可能である。The present invention is not limited to the above-described embodiment, but can be variously modified without departing from the gist thereof.
【0053】[0053]
【発明の効果】以上説明したように、この発明によれ
ば、表示ムラの発生を抑制し、表示品位を向上すること
が可能な自己発光型表示装置を提供することができる。As described above, according to the present invention, it is possible to provide a self-luminous display device capable of suppressing display unevenness and improving display quality.
【図1】図1は、この発明の一実施の形態にかかる有機
EL表示装置の構成を概略的に示す図である。FIG. 1 is a diagram schematically showing a configuration of an organic EL display device according to an embodiment of the present invention.
【図2】図2は、図1に示した有機EL表示装置の一部
を概略的に示す断面図である。FIG. 2 is a sectional view schematically showing a part of the organic EL display device shown in FIG.
【図3】図3は、図1に示した有機EL表示装置におい
て第2電極に電気的にコンタクトされる補助配線の配線
例を概略的に示す図である。FIG. 3 is a view schematically showing a wiring example of an auxiliary wiring electrically connected to a second electrode in the organic EL display device shown in FIG. 1;
【図4】図4は、図3に示した有機EL表示装置の表示
エリアの補助配線の配線例を概略的に示す一部平面図で
ある。FIG. 4 is a partial plan view schematically showing a wiring example of auxiliary wiring in a display area of the organic EL display device shown in FIG. 3;
【図5】図5は、図1に示した有機EL表示装置におい
て第2電極に電気的にコンタクトされる補助配線の他の
配線例を概略的に示す図である。FIG. 5 is a view schematically showing another wiring example of the auxiliary wiring electrically connected to the second electrode in the organic EL display device shown in FIG. 1;
【図6】図6は、図1に示した有機EL表示装置におい
て第2電極に電気的にコンタクトされる補助配線の他の
配線例を概略的に示す図である。FIG. 6 is a view schematically showing another wiring example of the auxiliary wiring electrically connected to the second electrode in the organic EL display device shown in FIG. 1;
【図7】図7は、図5に示した有機EL表示装置におい
てA−A線に沿って測定したパネル正面輝度の測定結果
を示す図である。FIG. 7 is a diagram showing a measurement result of panel front luminance measured along the line AA in the organic EL display device shown in FIG. 5;
【図8】図8は、補助配線を配置しないで構成した有機
EL表示装置において測定したパネル正面輝度の測定結
果を示す図である。FIG. 8 is a diagram showing a measurement result of panel front luminance measured in an organic EL display device configured without arranging auxiliary wiring.
1…有機EL表示装置 10…TFT 20…TFT 30…蓄積助容量素子 40…有機EL素子 60…金属反射層 62…第1電極 64…有機発光層 66…第2電極 70…補助配線 100…アレイ基板 102…表示エリア 106…走査線駆動回路 108…信号線駆動回路 110…第1電極電源線 112…第2電極電源線 130…隔壁 P…電源供給線 DESCRIPTION OF SYMBOLS 1 ... Organic EL display device 10 ... TFT 20 ... TFT 30 ... Storage auxiliary | capacitance element 40 ... Organic EL element 60 ... Metal reflective layer 62 ... 1st electrode 64 ... Organic light emitting layer 66 ... 2nd electrode 70 ... Auxiliary wiring 100 ... Array Substrate 102 Display area 106 Scan line drive circuit 108 Signal line drive circuit 110 First electrode power supply line 112 Second electrode power supply line 130 Partition wall P Power supply line
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05B 33/26 H05B 33/26 Z Fターム(参考) 3K007 AB02 AB11 BA06 BB07 CB01 CB03 CC01 DA01 DB03 EB00 GA04 5C094 AA04 AA10 AA31 AA48 AA54 AA55 BA03 BA27 CA19 DA13 DB01 DB04 EA04 EA05 EA07 FA01 FA02 FB01 FB02 FB12 FB15 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) H05B 33/26 H05B 33/26 Z F term (Reference) 3K007 AB02 AB11 BA06 BB07 CB01 CB03 CC01 DA01 DB03 EB00 GA04 5C094 AA04 AA10 AA31 AA48 AA54 AA55 BA03 BA27 CA19 DA13 DB01 DB04 EA04 EA05 EA07 FA01 FA02 FB01 FB02 FB12 FB15
Claims (5)
信号線に略直交して配置される複数の走査線と、これら
交点付近に配置されるスイッチング素子と、前記スイッ
チング素子に接続され第1電極及び第2電極間に独立島
状に形成される発光層を備えた表示素子と、がマトリク
ス状に配置される自己発光型表示装置において、 前記第1電極は、前記表示素子毎に独立に形成され、前
記第2電極は、前記表示素子に共通に形成されており、 前記第1電極に電気的に絶縁され、且つ前記第2電極と
電気的に接続された補助配線とを含むことを特徴とする
自己発光型表示装置。1. A plurality of signal lines disposed on a substrate, a plurality of scanning lines disposed substantially orthogonal to the signal lines, a switching element disposed near an intersection thereof, and a connection to the switching element. And a display element having a light emitting layer formed in an independent island shape between the first electrode and the second electrode, wherein the first electrode is provided for each of the display elements. And the second electrode is formed in common with the display element, and is electrically insulated by the first electrode, and is connected to an auxiliary wiring electrically connected to the second electrode. A self-luminous display device characterized by including:
の各々を分離する隔壁を備え、前記補助配線は、前記隔
壁上に配置されることを特徴とする請求項1に記載の自
己発光型表示装置。2. The self-luminous display according to claim 1, wherein the self-luminous display device includes a partition for separating each of the display elements, and the auxiliary wiring is disposed on the partition. Type display device.
に連結して配置され、前記補助配線の各々は、表示エリ
アにわたって電気的に接続されることを特徴とする請求
項1に記載の自己発光型表示装置。3. The display device according to claim 1, wherein the auxiliary wiring is arranged to be connected between the adjacent display elements, and each of the auxiliary wirings is electrically connected over a display area. Self-luminous display device.
が小さいことを特徴とする請求項1に記載の自己発光型
表示装置。4. The self-luminous display device according to claim 1, wherein the auxiliary wiring has a smaller resistance than the second electrode.
2電極を介して光を外部に取り出すことを特徴とする請
求項1に記載の自己発光型表示装置。5. The self-luminous display device according to claim 1, wherein the second electrode has a light-transmitting property, and extracts light to the outside through the second electrode.
Priority Applications (4)
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---|---|---|---|
JP2001122884A JP2002318553A (en) | 2001-04-20 | 2001-04-20 | Luminous display device |
US10/125,612 US6900470B2 (en) | 2001-04-20 | 2002-04-19 | Display device and method of manufacturing the same |
TW091108121A TWI257496B (en) | 2001-04-20 | 2002-04-19 | Display device and method of manufacturing the same |
KR10-2002-0021754A KR100474029B1 (en) | 2001-04-20 | 2002-04-20 | Display device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001122884A JP2002318553A (en) | 2001-04-20 | 2001-04-20 | Luminous display device |
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JP2002318553A true JP2002318553A (en) | 2002-10-31 |
Family
ID=18972527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2001122884A Pending JP2002318553A (en) | 2001-04-20 | 2001-04-20 | Luminous display device |
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