JP2005128310A - Display arrangement and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device which is equipped with light emitting elements of a top emission type and with which uniform light emission intensity is obtained within a display surface and excellent visibility is obtained preferably in an outdoor environment as well. <P>SOLUTION: The display device is provided with a plurality of element regions compartmentalized and formed disposably with the light emitting elements 50 on a substrate 20 and conductive films 52 conducted and connected to the light emitting elements 50. The device is so constituted that the one element region 10 is provided with the light emitting element 50 including a pixel electrode 19, an EL layer 27 including a light emitting layer and a translucent conductive film 28 laminated on each other and the other element region 110 is provided with a conductive connection section 51 conducted and connected with the translucent conductive film 28 formed across the plurality of the element regions 110 and the conductive film 52. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a display device and an electronic apparatus.

  In recent years, attention has been paid to an EL display device including an electroluminescence (hereinafter referred to as EL) element as a display device including a self-luminous element that does not require a backlight or the like. An EL display device has a structure in which a plurality of light emitting elements each having an EL layer (light emitting layer) sandwiched between a pair of electrodes are provided in a substrate surface. It is classified into a bottom emission type that extracts light and a top emission type that extracts light from the sealing member side. In recent years, there has been a high need for larger, higher definition, and higher brightness EL display devices, and research and development of top emission type EL display devices that are advantageous for achieving high aperture ratios and high efficiency of light emitting elements. Has been actively conducted.

In the top emission type EL display device, the light extraction side electrode (upper electrode) is formed of a solid film of a transparent conductive material such as ITO. However, these transparent conductive materials have a high resistance compared to metals, and a voltage drop tends to occur in the electrodes, thereby making the voltage applied to the light emitting layer non-uniform. As a result, there is a problem that the light emission intensity typically decreases at the center of the display area, and the display performance decreases. In order to prevent such a voltage drop, a configuration has been proposed in which a rib that contacts the upper electrode is provided in the pixel boundary region and used as an auxiliary wiring (see, for example, Patent Document 1).
JP 2001-195008 A

  In the technique described in the above document, in order to secure the conductive connection between the rib that is the auxiliary wiring and the upper electrode, the RGB (red, green, blue) light emitting layer is separately applied using the vapor deposition mask, and the light is emitted on the rib. The problem of adhesion of the layer forming material is to be avoided. However, in order to perform such coating separately, a highly accurate vapor deposition mask and alignment technology are required, and when these precisions are not sufficient, the light emitting layer forming material adhered between the auxiliary wiring and the upper electrode Becomes a resistance component and causes a voltage drop. In particular, in a large panel exceeding 20 inches, the variation in emission intensity becomes extremely large when the voltage drop occurs. Moreover, since the said rib is formed with metal materials, such as Al, there exists a possibility that external light may reflect and may reduce visibility.

  The present invention has been made in view of the above-described problems of the prior art, and in a display device including a top emission type light emitting element, uniform light emission intensity can be obtained within the display surface, and preferably in an outdoor environment. An object of the present invention is to provide a display device capable of obtaining excellent visibility.

In order to solve the above problems, the present invention provides a display device in which a light emitting element in which a first electrode, a functional layer including a light emitting layer, and a second electrode are sequentially stacked on a substrate is provided. A plurality of element regions partitioned on the substrate so that the light emitting elements can be disposed, and the second electrode of the light emitting element is formed through the plurality of element regions. A conductive member for supplying a potential to the second electrode of the light-emitting element, and at least a part of any one of the element regions includes the conductive member, the translucent conductive film, Provided is a display device characterized in that a conductive connection part for conductively connecting the two is provided.
According to this configuration, the potential of the light-transmitting conductive film can be controlled through the conductive connection portion provided in the element region provided by partitioning the substrate, whereby the second electrode of the light-emitting element can be controlled. It is possible to effectively prevent a voltage drop from occurring. Therefore, the light emitting element can emit light with uniform intensity in the display region, and a display device with excellent display quality can be provided.

In the display device of the present invention, the conductive connection portion and the light emitting element may be provided in one element region. In the display device of the present invention, the conductive connection portion may be formed so as to occupy one or a plurality of the element regions.
Any of the above configurations can effectively prevent a voltage drop of the translucent conductive film formed over a plurality of element regions with a simple configuration. Further, it is not necessary to greatly change the configuration as compared with the conventional display device, and the manufacturing is easy.

  In the display device of the present invention, the light emitting element and the conductive connection portion may be configured to be planarly partitioned by a partition made of an insulating material. According to this configuration, since the conductive connection portion and the light emitting element are partitioned by the partition walls, it is effective that the material used in the light emitting element forming process adheres to the conductive connection portion and becomes a resistance component. Can be prevented. Further, this configuration is suitable when a liquid material is used for forming an electrode or a functional layer that is a component of the light emitting element. In the case where the conductive connection occupies one or more element regions, it may be a partition partitioning the element regions.

  In the display device of the present invention, it is preferable that the partition wall is made of a light absorbing material. With such a structure, the contrast between the light-emitting element and the peripheral region can be increased and high-quality display can be obtained.

In the display device of the present invention, a wiring layer including the conductive member is provided on the substrate, and the light emitting element is provided via an insulating film formed on the wiring layer. The film and the conductive member may be conductively connected through a contact hole penetrating the insulating film.
According to this configuration, the conductive member can be routed using the lower layer of the insulating film that does not affect the aperture ratio of the display device, and display quality can be improved without reducing the aperture ratio. In addition, since the conductive member is covered with an insulating film in a region other than the contact hole, there is an advantage that it is difficult to cause contact between the conductive member and a forming material such as another light emitting element.

  In the display device of the present invention, the conductive member may be formed in a flat solid shape on the wiring layer. With such a configuration, the conductive member can be provided without complicating the manufacturing process, and display quality can be improved while suppressing an increase in manufacturing cost.

  In the display device of the present invention, the wiring layer may be provided with an electrode wiring that is conductively connected to the first electrode of the light emitting element. That is, in the present invention, a configuration in which the electrode wiring and the conductive member respectively connected to the first electrode and the second electrode of the light emitting element are provided in the same layer under the insulating film can be applied. According to this configuration, the conductive member and the electrode wiring can be formed in the same process, and manufacturing efficiency can be realized.

  The display device of the present invention includes a plurality of types of light emitting elements having different emission colors and a pixel region that includes a plurality of the light emitting elements to form one display unit, and the pixel region includes the conductive connection portion. It can be set as the structure containing the element area | region provided with. By adopting such a configuration, for example, in a color display device having a pixel region constituted by light emitting elements of three colors of red, blue, and green as a display unit, a conductive connection portion is provided for each pixel region. Therefore, the aperture ratio in each pixel region can be made uniform, and the voltage drop of the translucent conductive film and the second electrode can be prevented, which is extremely effective in making the luminance of each pixel region uniform. .

  In the display device of the present invention, it is preferable that the conductive member is made of a low reflective conductive material. Depending on the arrangement form of the conductive member, external light may be incident on the conductive member. By forming the conductive member with such a low-reflective conductive material, reflection of external light is effective. Therefore, good visibility can be obtained even outdoors where strong external light is incident.

  In the display device of the present invention, the conductive member is preferably a Ti film, a Cr film, or a laminated film of a Ti film and an ITO film. By using these metal films or laminated films, the light reflectance of the conductive member can be satisfactorily reduced.

  In the display device of the present invention, the light emitting element may be an electroluminescent element. The present invention is a technique suitable for use in a top emission type EL display device using a light-transmitting conductive film for the upper electrode, and can be manufactured by a simple manufacturing process by applying the present invention. An EL display device capable of obtaining display with uniform brightness can be provided.

  Next, an electronic apparatus according to the present invention includes the display device according to the present invention described above. According to this configuration, it is possible to provide an electronic device including a display unit that has a uniform light emission intensity in the display region and can display with high luminance and high image quality.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view showing the overall configuration of an organic EL display device which is an example of the display device of the present invention, FIG. 2 is a plan configuration diagram of a plurality of pixels, and FIG. 3 is AA ′ in FIG. FIG. 4 is a cross-sectional configuration diagram taken along the line BB ′ in FIG. 2. In addition, about each drawing referred below, in order to make each element easy to see, dimensions, film thicknesses, and the like are appropriately changed and displayed.

First, the overall configuration of the organic EL display device according to the present embodiment will be described with reference to FIG.
The organic EL display device 1 of this example is configured by arranging pixel electrodes connected to switching TFTs (not shown) in a matrix on a substrate 20 on an electrically insulating and translucent substrate 20. The pixel part 3 (inside the one-dot chain line frame in FIG. 1) having a substantially rectangular shape in plan view is provided. The pixel unit 3 includes a display area 4 at the center (inside the two-dot chain line frame in FIG. 1) and a dummy area 5 (an area between the one-dot chain line frame and the two-dot chain line frame) arranged around the display area 4. ) And is divided. In the display area 4, display dots R, G, and B of three colors each having a pixel electrode are arranged in a matrix so as to be separated from each other in the vertical direction and the horizontal direction on the paper surface. Further, scanning line driving circuits 80 are arranged on the left and right sides of the display area 4 in FIG. 1, while data line driving circuits 93 are arranged on the upper and lower sides of the display area 4 in FIG. The scanning line driving circuit 80 and the data line driving circuit 93 are arranged at the peripheral edge of the dummy region 5. In FIG. 1, the scanning lines and the data lines are not shown.

  Further, an inspection circuit 90 is arranged above the data line driving circuit 93 in FIG. The inspection circuit 90 is a circuit for inspecting the operating state of the organic EL display device 1, and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside. The quality and defects of the display device can be inspected. The inspection circuit 90 is also arranged below the dummy area 5. Further, a driving external substrate 95 is connected to the substrate 20, and the external driving circuit 100 is mounted on the driving external substrate 95.

FIG. 2 is a plan configuration diagram showing a display area including a plurality of pixels of the organic EL display device 1. In the display region shown in the figure, an element region 110 which is a rectangular region in plan view surrounded by the power supply line 10 and the signal line 11 is shown. Among the four element regions 110, the light emitting element 50 is provided in three element regions 110, and the conductive connection portion 51 is provided in the remaining one element region 110.
Each light emitting element 50 functions as the display dots R, G, and B shown in FIG. 1, and constitutes the minimum display unit in the present display device. The conductive connection portion 51 is provided with the bank 22 having the same planar shape as the element region 110 provided with the light emitting element 50. However, the TFT 12 and the pixel electrode 19 are not provided and do not contribute to display. It is an area.

  The light emitting element 50 includes a switching TFT 12 (hereinafter simply referred to as a TFT) provided in the vicinity of the intersection of the power supply line 10 and the scanning line 11. An island-shaped semiconductor layer 13 made of, for example, polycrystalline silicon is formed on the substrate 20, and the TFT 12 is configured by a structure in which the gate electrode 14 extending from the scanning line 11 intersects the semiconductor layer 13 in a plane. .

  A contact hole 15 is formed at one end of the semiconductor layer 13 forming the source region of the TFT 12, and the source region of the TFT 12 and the power supply line 10 are electrically connected through the contact hole 15. On the other hand, a contact hole 16 is also formed at the other end of the semiconductor layer 13 forming the drain region of the TFT 12, and the drain region of the TFT 12 and the relay conductive layer 17 are electrically connected via the contact hole 16. The relay conductive layer 17 is formed in the same layer as the power supply line 10. The relay conductive layer 17 is electrically connected to the pixel electrode 19 through the contact hole 18. With the above configuration, the drain region of the TFT 12 and the pixel electrode 19 are electrically connected via the relay conductive layer 17.

  Note that the storage capacitor may be formed by arranging the relay conductive layer 17 and the scanning line 11 so as to overlap each other in a plane. Reference numeral 22 denotes a bank which serves as a so-called weir (partition) for storing a solution serving as a material of the EL layer when an EL layer described later is formed by a droplet discharge method typified by an ink jet method or the like. In the case of the present embodiment, the bank 22 has a two-layer structure of an inorganic material layer 22 </ b> A and an organic material layer 22 </ b> B, and is formed annularly along the periphery of the pixel electrode 19.

Next, the cross-sectional structure of the organic EL display device 1 will be described with reference to FIGS. 3 and 4.
First, as shown in FIG. 3, a wiring layer (conductive member) 52 made of a metal film or the like is formed on a light-transmitting substrate 20 such as glass. In the case of this embodiment, the conductive film 52 is composed of a solid metal film or the like. The conductive film 52 is conductively connected to the light-transmitting conductive film 28 forming one electrode of the light emitting element 50 formed on the substrate 20 (see FIG. 4), and is a metal having excellent electrical conductivity. It is preferable to form with material etc. In addition, a conductive film including a low-reflective metal film such as a Ti film, a Cr film, or a laminated film of a Ti film and an ITO (indium tin oxide) film is preferable. Even when used outdoors with strong external light, it is possible to prevent the external light incident on the organic EL display device from being reflected by the conductive film 52 and to obtain good visibility.

  When the conductive film 52 is a laminated film in which a Ti film and an ITO film are sequentially laminated from the substrate 20 side, the thickness of the ITO film is preferably in the range of 60 nm to 100 nm. This is because when the thickness of the ITO film is within this range, a low reflectance can be obtained over almost the visible light region. The thickness of the Ti film is preferably in the range of 30 nm to 500 nm. If the thickness of the Ti film is smaller than 30 nm, the reflectance becomes high and cannot be put to practical use. If the thickness of the Ti film is larger than 500 nm, the internal stress of the film increases and the warpage of the substrate 20 is increased. This may cause peeling of the film or the film, or destroy the element. Furthermore, it is desirable that the arithmetic average roughness Ra of the surface of the ITO film be in the range of 4 nm to 50 nm. This is because a further effect of reducing the reflectivity can be obtained by roughening the surface of the ITO film to this extent.

  A base insulating film 23 made of, for example, a silicon oxide film is formed so as to cover the conductive film 52, and the TFT 12 is formed on the base insulating film 23. The TFT 12 of this embodiment has an LDD (Lightly Doped Drain) structure, and the semiconductor layer 13 includes a high concentration source region 13a, a low concentration source region 13b, a channel region 13c, a low concentration drain region 13d, and a high concentration drain. Region 13e is formed. A gate insulating film 24 is formed on the semiconductor layer 13, and the gate electrode 14 is disposed in a region facing the channel region 13 c with the gate insulating film 24 interposed therebetween. A first interlayer insulating film 25 is formed so as to cover the gate electrode 14 and the scanning line 11, and the power supply line 10 and the relay conductive layer 17 are formed on the first interlayer insulating film 25.

  The power supply line 10 is connected to the high concentration source region 13 a of the semiconductor layer 13 through a contact hole 15 that penetrates the first interlayer insulating film 25 and the gate insulating film 24. On the other hand, the relay conductive layer 17 is connected to the high concentration drain region 13 e of the semiconductor layer 13 through a contact hole 16 penetrating the first interlayer insulating film 25 and the gate insulating film 24.

  A second interlayer insulating film 26 having a planarized surface is formed so as to cover the power supply line 10 and the relay conductive layer 17, and the pixel electrode 19 is formed on the second interlayer insulating film 26. The pixel electrode 19 is connected to the relay conductive layer 17 through a contact hole 18 that penetrates the second interlayer insulating film 26. The pixel electrode 19 is formed of a reflective metal film such as Al or silver. The pixel electrode 19 functions as an anode for injecting holes into an EL layer, which will be described later, and constitutes a first electrode constituting the light emitting element 50. The pixel electrode 19 is formed of a transparent conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), ICO (indium cerium oxide), GZO (gallium zinc oxide), or ZnO (zinc oxide). You can also The pixel electrode 19 may have a structure in which a reflective metal film such as Al or silver and a material such as ITO (indium tin oxide) that injects holes into the EL layer are stacked.

  An inorganic material layer 22A and an organic material layer 22B are formed along the peripheral edge of the pixel electrode 19, and a bank 22 is constituted by the two layers of the inorganic material layer 22A and the organic material layer 22B. An EL layer 27 constituting an organic EL element (light emitting element) is formed at the center of the pixel electrode 19 partitioned by the bank 22. In the present embodiment, the EL layer 27 is composed of two layers, for example, a hole injection (transport) layer 27A made of a thiophene-based conductive polymer and a light emitting layer 27B made of a light emitting polymer (LEP). As the structure of the EL layer 27, a structure in which a hole (electron) injection layer and a transport layer are separately provided, a structure including three layers of an electron injection layer, a hole injection layer, and a light emitting layer are applied. Also good.

A translucent conductive film 28 is provided so as to cover the EL layer 27. The translucent conductive film 28 is a transparent conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), ICO (indium cerium oxide), GZO (gallium zinc oxide), ZnO (zinc oxide), and the like. Can be made of material. In the case of the present embodiment, the translucent conductive film 28 functions as a cathode for injecting electrons into the EL layer 27 and forms a second electrode constituting the light emitting element 50.
Note that since the light emission control of the EL layer 27 of each pixel is performed by the amount of charge supplied to the pixel electrode 19 via the TFT 12 of each pixel, the translucent conductive film 28 needs to be formed individually for each pixel. It may be formed over all the pixels. Further, a light-transmitting sealing layer 29 is provided to prevent moisture and the like from entering the EL layer 27.

  Next, as shown in FIG. 4, in the element region 110 provided with the conductive connection portion 51, the base insulating film 23, the gate insulating film 24, the first interlayer insulating film 25, and the second interlayer stacked on the substrate 20. A contact hole 51 a that penetrates the insulating film 26 and reaches the conductive film 52 is provided, and the transparent conductive film 28 formed in a solid shape so as to cover the plurality of element regions 110 and the conductive film 52 are contact holes. It is electrically connected at the bottom of 51a. Although not shown, the conductive film 52 is connected to a drive circuit provided in the organic EL display device 1 or an external drive circuit so that an arbitrary voltage can be applied.

  In the organic EL display device 1 of the present embodiment having the above-described configuration, a plurality of element regions 110 are partitioned on the substrate 20, and the light emitting elements 50 or the conductive connection portions 51 are disposed in the element regions 110. With this configuration, an arbitrary voltage can be applied to the translucent conductive film 28 that forms the cathode of the light emitting element 50 through the conductive film 52 and the conductive connection portion 51, and thus a relatively high resistance transparent film can be applied. The voltage drop in the photoconductive film 28 can be effectively prevented. As a result, the top emission type light emitting element 50 can emit light with uniform brightness within the display region, and a high-quality display can be obtained.

  In the present embodiment, the translucent conductive film 28 and the conductive film 52 serving as the auxiliary wiring are both solid films, and it is not necessary to selectively form them using a metal mask having a complicated structure. There is no need for alignment. Therefore, it is easy to manufacture, and resistance variation at the contact portion between the conductive film 52 and the translucent conductive film 28 is less likely to occur. Therefore, it is possible to provide a high-quality organic EL display device that can be manufactured by a simple manufacturing process.

  In the organic EL display device 1, the element region 110 provided with the conductive connection portion 51 among the element regions 110 formed by partitioning the substrate 20 in a planar grid pattern does not function as a display pixel, and thus is displayed at a certain frequency. Although the pixel in the region is in a missing state, the element region 110 and the light emitting element 50 have minute dimensions of about several tens of μm to several mm, so that the element region provided with the conductive connection portion 51 is conspicuous. It is not visually recognized. In particular, in a large-sized high-definition display device, an observer appreciates a display image at a position about 1 to several meters away, so there is no problem at all.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment, the conductive film 52 that is conductively connected to the translucent conductive film 28 is a solid metal thin film. However, the shape of the conductive film 52 is not particularly limited, and may be, for example, a flat surface. It may be formed in a line of sight. When such a linear conductive film 52 is used, a conductive member is formed in the same layer as the power supply line 10 and the relay conductive layer 17 (a layer between the first interlayer insulating film 25 and the second interlayer insulating film 26). In addition, the conductive film can be formed simultaneously with the pattern formation of the power supply line 10 and the like, and the organic EL display device can be manufactured efficiently. The conductive film 52 is preferably located between the pixel electrode 19 and the substrate 20. With such a configuration, the conductive member can be routed regardless of the pixel electrode 19 that affects the aperture ratio of the display device, so that display quality can be improved without reducing the aperture ratio. In the above embodiment, the configuration in which the wiring layer (conductive member) 52 made of a metal film or the like is formed on the light-transmitting substrate 20 such as glass has been described. However, the top emission type EL display device may be used. For example, the substrate may not be a light-transmitting substrate, and a conductive substrate that can function as a conductive member may be used.

In addition, specific descriptions of the material, film thickness, planar shape, and the like of each layer exemplified in the above embodiment can be changed as appropriate. Although the pixel circuit configuration in FIG. 2 has been described in the above embodiment, the present invention is not limited to this. When an organic EL element is driven by an active matrix method, a voltage holding element is provided to hold a gate voltage of a driving transistor that supplies current to the organic EL element, and a voltage corresponding to the gradation of the pixel during a selection period. Is used for writing to the gate of the driving transistor, but such a configuration may be used.
Further, although an active matrix type example using TFT as a switching element has been given as an example of a display device, an active matrix type display device or a passive matrix type display device using a thin film diode (TFD) as a switching element may be used. good. Furthermore, not only the organic EL display device but also the present invention can be applied to other display devices.

Hereinafter, a method for manufacturing the organic EL display device 1 having the above configuration will be briefly described.
First, a conductive film 52 made of a Ti film, a Cr film, or a laminated film of a Ti film and an ITO film is formed on one surface of the substrate 20. Next, after a base insulating film 23 made of a silicon oxide film having a thickness of about 200 to 500 nm is formed by plasma CVD or the like, a semiconductor layer made of an amorphous silicon film having a thickness of about 30 to 70 nm is formed on the base insulating film 23. The film is formed by a plasma CVD method or the like. Next, the semiconductor layer is crystallized by laser annealing or the like, so that the semiconductor layer is a polycrystalline silicon film. Next, after patterning the semiconductor layer to form the island-shaped semiconductor layer 13, a gate insulating film 24 made of a silicon oxide film having a thickness of about 60 to 150 nm is formed by a plasma CVD method or the like. Next, a light-transmitting material such as ITO is formed by sputtering or the like, and then patterned to form the scanning line 11 and the gate electrode 14. Then, source / drain regions are formed in a self-aligned manner by ion implantation using the gate electrode 14 as a mask.

  Next, a first interlayer insulating film 25 is formed, contact holes 15 and 16 reaching the source / drain regions of the semiconductor layer 13 are formed, and then a light-transmitting material such as ITO is formed by sputtering or the like. Then, the power supply line 10 and the relay conductive layer 17 are formed. Next, after forming the second interlayer insulating film 26 and forming the contact hole 18 reaching the relay conductive layer 17, a transparent material such as ITO is formed by sputtering or the like, and this is patterned to form the pixel electrode. 19 is formed. Next, an inorganic material film 22A is formed by plasma CVD or the like and patterned. When forming the pattern of the inorganic material film 22A, the contact hole 51a shown in FIG. 4 can be formed. Thereafter, the organic material film 22 </ b> B is formed in a predetermined pattern to form the bank 22. The organic material film 22B can be formed by a photolithography method, a printing method, or the like.

Next, a solution containing a polymer organic compound is discharged onto the pixel electrode 19 in the region partitioned by the bank 22 using a droplet discharge method such as an ink jet method, and the EL layer 27 (hole injection transport layer 27A) is discharged. And a light emitting layer 27B) are selectively formed. In forming the EL layer 27, filling and drying of the solution containing the organic compound material are repeated for each layer. After the EL layer 27 is formed, a translucent conductive film 28 made of ITO or the like is formed on the entire surface of the pixel portion 3 by a sputtering method or the like. Next, a sealing layer 29 made of a transparent resin or a thin layer is formed.
Next, an ITO film 31A having a film thickness of 60 nm to 100 nm is formed on the surface of the substrate 20 opposite to the side on which the organic EL element 50 is formed by sputtering or the like, and then a Ti film 31B having a film thickness of 30 nm to 500 nm. The low reflection layer 31 is formed by forming a film by sputtering, ion beam evaporation or the like. The organic EL display device 1 of the present embodiment is completed through the above steps.

(Other forms of display device)
In the above embodiment, the case where the conductive connection portion 51 is provided so as to occupy one of the element regions partitioned and formed on the substrate 20 has been described. However, the light emitting element 50 and the conductive connection portion on the substrate 20 are described. The arrangement form with 51 is not limited to the above configuration, and various configurations can be applied. FIG. 5 is a plan view showing another embodiment of the display device according to the present invention and is a view showing a plurality of element regions of the organic EL display device.

  Of the three element regions 110 shown in FIG. 5A, the light emitting elements 50 are provided in the element regions on the left and right sides of the drawing, respectively. A small light emitting element 50 s is disposed and a conductive connection portion 51 is provided. With such a configuration, compared to the organic EL display device 1 of the previous embodiment, the conductive connection portion 51 is not easily seen by an observer, and the aperture ratio is reduced by providing the conductive connection portion 51. Can also be minimized. In particular, if the light emitting element 50s having a relatively small area is assigned to the green light emitting layer having high visibility, it is convenient without impairing the balance of chromaticity and luminance.

Next, FIG. 5B shows a form in which three element regions 110 having a rectangular shape in plan view are arranged in the horizontal direction in the figure, and the conductive connection portion 51 is provided in the central element region 110. This form shows a case where the present invention is applied to a color display device in which one display unit is constituted by, for example, light emitting elements 50 of three colors of R, G, and B.
As described above, the present invention can be applied to a display device having an arbitrary pixel shape, and in any form, the luminance of the light emitting element 50 can be made uniform in the display region, and the display quality is excellent. A display device can be provided.

(Electronics)
FIG. 6 is a perspective configuration diagram showing an example of an electronic apparatus according to the present invention. A video monitor 1200 shown in the figure includes a display unit 1201 including the organic EL display device (display device) of the previous embodiment, a housing 1202, a speaker 1203, and the like. The video monitor 1200 can display uniform brightness on the organic EL display device.

FIG. 1 is an overall configuration diagram of an organic EL display device according to an embodiment. FIG. 2 is a plan configuration diagram showing a plurality of element regions. FIG. 3 is a cross-sectional configuration diagram taken along the line A-A ′ of FIG. 2. FIG. 4 is a cross-sectional configuration diagram along line B-B ′. FIG. 5 is a plan view showing another form of the organic EL display device. FIG. 6 is a perspective configuration diagram illustrating an example of an electronic apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Organic EL display device (display device), 10 power supply line (electrode wiring), 11 scanning line, 12 switching TFT, 14 gate electrode, 17 relay conductive layer, 19 pixel electrode (first electrode), 20 substrate, 27 EL layer (functional layer), 28 translucent conductive film (second electrode), 50 light emitting element, 51 conductive connection portion, 51a contact hole, 52 conductive film (conductive member)

Claims (13)

A display device provided with a light emitting element formed by sequentially laminating a first electrode, a functional layer including a light emitting layer, and a second electrode on a substrate,
A plurality of element regions partitioned on the substrate so that the light emitting elements can be disposed;
The second electrode of the light emitting element includes a translucent conductive film formed across a plurality of the element regions,
A conductive member for supplying a potential to the second electrode of the light emitting element is provided;
A display device, wherein a conductive connection portion for conductively connecting the conductive member and the light-transmitting conductive film is provided in at least a part of any one of the element regions.   The display device according to claim 1, wherein the conductive connection portion and the light emitting element are provided in one element region.   The display device according to claim 1, wherein the conductive connection portion occupies one or a plurality of the element regions.   4. The display device according to claim 1, wherein the light emitting element and the conductive connection part are planarly partitioned by a partition made of an insulating material. 5.   The display device according to claim 4, wherein the partition wall is made of a light absorbing material. A wiring layer including the conductive member is provided on the substrate, and the light emitting element is provided via an insulating film formed on the wiring layer,
6. The light-transmitting conductive film and the conductive member are conductively connected through a contact hole penetrating the insulating film. Display device.   The display device according to claim 6, wherein the conductive member is formed in a flat solid shape on the wiring layer.   The display device according to claim 6, wherein an electrode wiring that is conductively connected to the first electrode of the light emitting element is provided in the wiring layer. A plurality of types of light emitting elements having different emission colors, and a pixel region that includes a plurality of the light emitting elements and constitutes one display unit;
The display device according to claim 1, wherein the pixel region includes an element region in which the conductive connection portion is provided.   The display device according to claim 1, wherein the conductive member is made of a low reflective conductive material.   The display device according to claim 10, wherein the conductive member is a Ti film, a Cr film, or a laminated film of a Ti film and an ITO film.   The display device according to claim 1, wherein the light emitting element is an electroluminescence element.   An electronic apparatus comprising the display device according to claim 1.

Images