CN1443368A - 半导体元件的接触连接方法 - Google Patents

半导体元件的接触连接方法 Download PDF

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CN1443368A
CN1443368A CN01813237.5A CN01813237A CN1443368A CN 1443368 A CN1443368 A CN 1443368A CN 01813237 A CN01813237 A CN 01813237A CN 1443368 A CN1443368 A CN 1443368A
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H·许布纳
V·克里佩
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Abstract

将含有至少两种金属或半导体元素的低共熔或化学计量组合物制成的焊料涂敷在半导体元件(1)的一触点(2)上，再使之与喷镀金属的薄膜(4)的金属层(3)相接触，通过加热使焊料与薄膜的金属层熔成合金，从而产生一具有较高熔点的导电连接。尤其适用与此用途的焊料是Bi22In78(熔点73℃)、Bi43Sn57、In52Sn48、BiIn或BiIn2。

Description

半导体元件的接触连接方法
技术领域
本发明关于半导体元件与薄膜喷镀金属的接触连接方法。
背景技术
有了导电粘合剂，即使在低加工温度下，也可构成导电连接。然而，许多此类粘合剂实际需要较高的固化温度，在这样的温度下，薄膜的塑料层将被损坏，或者喷镀金属将被分离。另外，这种连接方法的导电性还不足以满足许多应用的要求，而且对潮湿过于敏感。尤其当一元件(例如，硅集成电路芯片)的触点拟与一喷镀金属塑料薄膜的金属层(例如铜或镍层)进行导电连接时，由于其热载荷能力的极限大约是120℃，并且喷镀的金属层厚度非常薄(典型厚度约为100nm)，因此，用导电粘合剂无法实现经久耐用、导电性良好且无法分离的连接(若要分离该连接，必须破坏薄膜)。
发明内容
本发明的目的是，提供一种能在不损坏塑料薄膜的温度下，将一半导体元件的触点接触连接在薄膜的喷镀金属上的方法，且该方法可实现具有足够导电性的永久导电连接。
该目的可通过具有权利要求1所述特征的方法实现。其改进方案在从属权力要求中予以披露。
在本发明方法中，一种由两种以上金属或半导体化学元素制成的焊料(金属焊料较佳)被涂敷在半导体元件的触点或薄膜金属层的拟接触连接部位。该焊料的构成使它的熔点低于薄膜能耐受的临界温度，并且它熔化后形成一种材料，该材料固化后具有比原来的焊料更高的熔点。熔化焊料的较佳构成为，其能够与薄膜金属层的金属或半导体元件的触点金属熔成一合金或金属间化合物或金属间化合物相。所述熔点必须足够高，以致于若要熔化焊料连接，薄膜必然受到损坏，或至少金属层与薄膜分离并且整个组件将因此不能使用。
尤其适用于这种用途的焊料是一种组合物，即一种含有至少且最好两种组分的混合物，该两种组分可形成一混合物、一合金或一化学计量化合物，并且其配比选择须使该混合物保持在一低共熔点或至少接近一低共熔点。具体来说，就混合物的此一选择而言，任何组分配比的改变都会使熔点增高。焊料熔化时，一合金或金属间化合物生成，其含有一定比例的薄膜金属层金属或半导体元件的触点金属，因此，该构成导电连接材料的组合物与原来焊料组合物的低共熔性明显不同，它的熔点明显提高，具体而言，高出薄膜的安全温度。在这种情况下，近似低共熔组合物被定义为一种其熔点与低共熔点温度相差不超过10℃的组合物。
适合用作焊料的材料(较佳能与铜或镍制成的薄膜金属层相结合)主要是一种含有铋(化学符号Bi)的材料。可以实现理想效果的低共熔或近似低共熔组合物(与低共熔点的温度差不超过10℃)是来自含有铋和铟、含有铋和锡及含有铟和锡组合物组群的材料。这些材料的低共熔组合物按原子量关系分别为Bi22In78、Bi43Sn57或In52Sn48。
材料Bi22In78构成一熔点为72.7℃的低共熔组合物，因此，焊料连接可在约80℃温度下实施。例如，可以采用溅射法将焊料Bi22In78涂敷在半导体元件的触点上。于是，该焊料在触点上形成一薄层，该薄层与薄膜的金属层相接触，并且根据需要施加一定的压力。加热至一高于焊料熔点的温度时，焊料熔化，与薄膜金属层的金属熔成合金并生成一种材料，该材料在薄膜金属层与半导体触点之间形成导电连接，其至少能承受270℃的热载荷。如果使用一热载荷能力高达约120℃的薄膜，该连接在约80℃温度下即可毫无困难地实施。此后，该连接无法熔开，除非破坏薄膜。
附图说明
附图示意性地展示了一带触点2的半导体元件1和带金属层3的薄膜4的接触布置实例。薄膜和半导体元件的尺寸、拟连接至喷镀金属薄膜的触点数量和尺寸、及构成薄膜和金属层的层数均是随意的。
具体实施方式
在焊料过量的情况下，薄膜的金属层会与焊料在整个厚度上熔成合金，在某些情况下，这会导致薄膜的金属层与薄膜分离，另外，会残存未熔合金的焊料，这些焊料在一低温(例如，本实例中的72.7℃)下仍会熔化；为防止上述情况的发生，对涂布的焊料厚度进行控制较佳。涂敷的焊料厚度仅需保证全部焊料与触点金属或薄膜金属层的金属熔成一合金或一化学计量金属间化合物，并且至少粘附在薄膜上的薄膜原始金属层的一部分仍保持不变。当焊料熔化时，半导体元件触点与薄膜金属之间存留的焊料因此以比金属层金属更快的速度被消耗掉。由此所能达到的效果是，金属层形成的合金既不会穿透至薄膜，也不会残留未形成合金的焊料。生成的连接材料的熔点由该连接区内存在的热力学相的最低熔点确定。
在一个具体实施例中，一元件被接触连接在一具有一100nm厚镍金属层的塑料薄膜上，可采用的方法是在半导体元件触点上溅射一100nm厚的Bi22In78焊料层；在加热至80℃的情况下，几秒钟内即可形成导电连接，并且该连接能承受高达650℃的热载荷。
前面所述的其它低共熔组合物的熔点分别是139℃(Bi43Sn57)和117℃(In52Sn48)。如果使用的薄膜能安全地承受比相应的温度值再高几度(摄氏)的温度的话，那么该些组合物即可以使用。金属间化合物相BiIn和BiIn2为按化学计量比包含铋和铟的双组分金属间化合物，其熔点分别为109.5℃和89℃。这些温度对常规的塑料薄膜是安全的。金属间化合物相的优点是它在一特定温度下以单一相蒸发，而不像多种物质的混合物(其所含组分具有不同的蒸汽压力)那样蒸发。因此，如果这种金属间化合物相或化学计量组合物用作焊料的话，焊料可采用电子束蒸发方法进行涂敷。

Claims (10)

1、一种使半导体元件(1)与具有一金属层(3)的薄膜(4)进行接触连接方法，其中：第一步，首先将含有至少两种金属元素或半导体材料并且其熔点温度不会损坏塑料薄膜的焊料涂敷在半导体元件触点(2)与薄膜金属层之间；然后，第二步，促使焊料熔化，然后再固化，以此产生一永久性导电连接，所生成的连接材料的熔点高于所涂敷焊料的熔点。
2、如权利要求1所述的方法，其特征在于采用了一种焊料，该焊料在所述第二步中与所述薄膜的金属层金属生成一具有一较高熔点的合金或金属间化合物。
3、如权利要求1或2所述的方法，其特征在于采用了一种焊料，该焊料的熔点比所述焊料中含有的所述金属或半导体材料的低共熔组合物的温度高出不超过10℃。
4、如权利要求1至3任一权利要求所述的方法，其特征在于所用焊料含有铋。
5、如权利要求1至3任一权利要求所述的方法，其特征在于所用焊料是一种来自含有铋和铟、铋和锡、铟和锡组合物组群的材料。
6、如权利要求5所述的方法，其特征在于所用焊料是一种来自Bi22In78、Bi43Sn57和In52Sn48组群的材料。
7、如权利要求5所述的方法，其特征在于所用焊料是所述组合物BiIn或BiIn2的一种金属间化合物或金属间化合物相。
8、如权利要求6所述的方法，其特征在于，第一步，首先采用溅射法将所述焊料涂敷在所述触点或所述金属层上。
9、如权利要求7所述的方法，其特征在于，第一步，首先采用电子束蒸发方法将焊料涂敷在所述触点或所述金属层上。
10、如权利要求1至9任一权利要求所述的方法，其特征在于，第一步，以有限的厚度(与所述薄膜金属层的厚度相比)涂敷所述焊料层，以保证实施第二步操作以后，至少位于所述薄膜上的金属层部分仍保持不变。
CN01813237.5A 2000-07-28 2001-07-25 半导体元件的接触连接方法 Pending CN1443368A (zh)

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CN107452706B (zh) * 2016-05-30 2023-03-24 松下知识产权经营株式会社 电路部件的连接构造以及连接方法

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US6773956B2 (en) 2004-08-10
WO2002011205A1 (de) 2002-02-07
JP2004505468A (ja) 2004-02-19
US20030176054A1 (en) 2003-09-18
EP1176639B1 (de) 2007-06-20
ATE365378T1 (de) 2007-07-15
EP1176639A1 (de) 2002-01-30
TW525253B (en) 2003-03-21

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