CN1424774A - 发光二极管器件 - Google Patents

发光二极管器件 Download PDF

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Publication number
CN1424774A
CN1424774A CN02152636.2A CN02152636A CN1424774A CN 1424774 A CN1424774 A CN 1424774A CN 02152636 A CN02152636 A CN 02152636A CN 1424774 A CN1424774 A CN 1424774A
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groove
led device
led
substrate
electrode
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CN02152636.2A
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CN1263171C (zh
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堀内惠
中村忍
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Citizen Electronics Co Ltd
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Kawaguchiho Seiki K K
Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

在本发明的发光二极管器件中，在衬底上形成凹槽，一对电极设置在包含有该凹槽的外表面的、所述衬底的外表面上。将LED设置在凹槽的底部。采用透明密封板半闭合该凹槽的。

Description

发光二极管器件
技术领域
本发明涉及使用于移动电话等的电子设备中的发光二极管(LED)器件。
背景技术
图4是表示常规的LED器件的剖视图。LED器件15包含衬底25、由树脂制成且具有半球状凹槽19的框架18、嵌入框架18的电极17a及17b、以及紧固于电极17a的LED16。LED16通过引线20与电极17a、17b连接。凹槽19的内壁22被加工成光反射面22。在凹槽19中填满有透明树脂21用以密封LED。
在LED器件15中，若在透明树脂21中存在水气，则因回流焊接法产生的热量会导致水气膨胀，以致框架18折断。而且，透明树脂21会随着大气温度的变化而收缩。若重复发生这样的变化，引线20会被折断而导致LED器件不能可靠地使用。
发明内容
本发明旨在提供一种可靠性高的LED器件。
本发明的发光二极管器件包括：衬底；形成在所述衬底上的凹槽；设置在包含有所述凹槽的外表面的、所述衬底的外表面上的一对电极；设置在所述凹槽底部的LED；用于连接所述LED与所述电极的连接机构；用于密封所述连接机构的密封树脂；以及用于闭合所述凹槽的透明密封板。
又，所述凹槽形成为半球形。
又，在所述凹槽中，每个电极的外表面形成为光反射面。
又，所述密封板形成为凸透镜。
通过下面参照附图的描述，可以将使本发明的各种目的和优点变得更加清晰。
附图说明
图1是表示本发明第1实施例的剖视图。
图2是表示本发明第2实施例的剖视图。
图3是表示本发明第3实施例的剖视图。
图4是表示常规的LED器件的剖视图。
具体实施方式
参照表示本发明第1实施例的图1，LED1器件包括：由液晶聚合物构成并且具有半球形凹槽4的衬底2；电极11a、11b；以及通过凸块6、7固定于电极11a、11b的LED10。凹槽4的内壁涂覆有电极11a、11b，并且通过镀银将每个电极的外表面加工成光反射面9。LED10的下面用密封树脂5进行密封，以增强对水气、冲击以及振动的抵抗力，并且可以保护凸块6、7。
由透明密封板3将凹槽4盖住，以保护LED10。
构成衬底2的液晶聚合物具有很好的抗热性以及较小的膨胀系数。因此，有可能减少回流焊接法所产生的热量的影响以及大气温度变化的影响。
参照表示本发明第2实施例的图2，LED27设置在电极11a、11b上并且通过引线12与电极相连接。为了防止电线被折断，用透明树脂13将LED27与引线12密封。由于，树脂13的厚度小，大气温度的变化几乎不会影响树脂13以及引线12。
其他方面与第1实施例相同，故对其采用相同的标号。
参照表示本发明第3实施例的图3，替代图1所示的第1实施例中的平坦的密封板3，采用具有凸透镜形状的密封板14。
根据本发明，在内部设置LED的凹槽中，并没有填满树脂，故衬底以及引线不会因外热而折断。
虽然已经参照附图描述了本发明的一些实施例，但是它们仅仅是说明性的。事实上，在不背离本发明的原理的条件下，还可以对其进行各种形式的修改，而本发明的范围由所附权利要求书限定。

Claims (5)

1.一种发光二极管器件，其特征在于，包括：
衬底；
形成在所述衬底上的凹槽；
设置在包含有所述凹槽的外表面的、所述衬底外表面上的一对电极；
设置在所述凹槽底部的LED；
用于连接所述LED与所述电极的连接机构；
用于密封所述连接机构的密封树脂；以及
用于闭合所述凹槽的透明密封板。
2.如权利要求1所述的发光二极管器件，其特征在于，所述凹槽形成为半球形。
3.如权利要求1所述的发光二极管器件，其特征在于，在所述凹槽中，每个电极的外表面形成为光反射面。
4.如权利要求1所述的发光二极管器件，其特征在于，所述密封板形成为凸透镜。
5.如权利要求1所述的发光二极管器件，其特征在于，所述衬底由液晶聚合物构成。
CN02152636.2A 2001-11-22 2002-11-22 发光二极管器件 Expired - Fee Related CN1263171C (zh)

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JP2001358460 2001-11-22
JP2001358460A JP2003158301A (ja) 2001-11-22 2001-11-22 発光ダイオード

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CN1424774A true CN1424774A (zh) 2003-06-18
CN1263171C CN1263171C (zh) 2006-07-05

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US8936970B2 (en) 2010-09-08 2015-01-20 Epistar Corporation Light emitting structure having electrodes and manufacturing method thereof
CN104716247A (zh) * 2013-12-13 2015-06-17 日亚化学工业株式会社 发光装置
CN105874620A (zh) * 2014-01-08 2016-08-17 皇家飞利浦有限公司 用作完整led封装的深模制反射器杯体

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CN1263171C (zh) 2006-07-05
JP2003158301A (ja) 2003-05-30
US20030094622A1 (en) 2003-05-22
US6858880B2 (en) 2005-02-22

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