CN1424770A - 横向缓冲p型金属氧化物半导体管 - Google Patents
横向缓冲p型金属氧化物半导体管 Download PDFInfo
- Publication number
- CN1424770A CN1424770A CN 03112627 CN03112627A CN1424770A CN 1424770 A CN1424770 A CN 1424770A CN 03112627 CN03112627 CN 03112627 CN 03112627 A CN03112627 A CN 03112627A CN 1424770 A CN1424770 A CN 1424770A
- Authority
- CN
- China
- Prior art keywords
- type
- contact hole
- source
- epitaxial loayer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 03112627 CN1212674C (zh) | 2003-01-08 | 2003-01-08 | 横向缓冲p型金属氧化物半导体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 03112627 CN1212674C (zh) | 2003-01-08 | 2003-01-08 | 横向缓冲p型金属氧化物半导体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1424770A true CN1424770A (zh) | 2003-06-18 |
CN1212674C CN1212674C (zh) | 2005-07-27 |
Family
ID=4790213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 03112627 Expired - Fee Related CN1212674C (zh) | 2003-01-08 | 2003-01-08 | 横向缓冲p型金属氧化物半导体管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1212674C (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7719076B2 (en) | 2007-08-10 | 2010-05-18 | United Microelectronics Corp. | High-voltage MOS transistor device |
CN101335297B (zh) * | 2007-06-25 | 2010-06-16 | 东部高科股份有限公司 | 半导体器件及其制造方法 |
CN101364611B (zh) * | 2007-08-10 | 2011-04-20 | 联华电子股份有限公司 | 高压金属氧化物半导体晶体管 |
CN103123929A (zh) * | 2011-11-21 | 2013-05-29 | 上海华虹Nec电子有限公司 | 隔离型高耐压场效应管的版图结构 |
US9266886B2 (en) | 2014-02-03 | 2016-02-23 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9481674B1 (en) | 2016-06-10 | 2016-11-01 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9663515B2 (en) | 2014-11-05 | 2017-05-30 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9796710B2 (en) | 2014-10-14 | 2017-10-24 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9845308B2 (en) | 2014-11-05 | 2017-12-19 | Vitae Pharmaceuticals, Inc. | Isoindoline inhibitors of ROR-gamma |
US10301261B2 (en) | 2015-08-05 | 2019-05-28 | Vitae Pharmaceuticals, Llc | Substituted indoles as modulators of ROR-gamma |
US10829481B2 (en) | 2016-01-29 | 2020-11-10 | Vitae Pharmaceuticals, Llc | Benzimidazole derivatives as modulators of ROR-gamma |
US10913739B2 (en) | 2017-07-24 | 2021-02-09 | Vitae Pharmaceuticals, LLC (121374) | Inhibitors of RORγ |
US11008340B2 (en) | 2015-11-20 | 2021-05-18 | Vitae Pharmaceuticals, Llc | Modulators of ROR-gamma |
US11186573B2 (en) | 2017-07-24 | 2021-11-30 | Vitae Pharmaceuticals, Llc | Inhibitors of ROR gamma |
-
2003
- 2003-01-08 CN CN 03112627 patent/CN1212674C/zh not_active Expired - Fee Related
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101335297B (zh) * | 2007-06-25 | 2010-06-16 | 东部高科股份有限公司 | 半导体器件及其制造方法 |
US7719076B2 (en) | 2007-08-10 | 2010-05-18 | United Microelectronics Corp. | High-voltage MOS transistor device |
CN101364611B (zh) * | 2007-08-10 | 2011-04-20 | 联华电子股份有限公司 | 高压金属氧化物半导体晶体管 |
CN103123929A (zh) * | 2011-11-21 | 2013-05-29 | 上海华虹Nec电子有限公司 | 隔离型高耐压场效应管的版图结构 |
CN103123929B (zh) * | 2011-11-21 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 隔离型高耐压场效应管的版图结构 |
US10807980B2 (en) | 2014-02-03 | 2020-10-20 | Vitae Pharmaceuticals, Llc | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US10399976B2 (en) | 2014-02-03 | 2019-09-03 | Vitae Pharmaceuticals, Llc | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9624217B2 (en) | 2014-02-03 | 2017-04-18 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US11535614B2 (en) | 2014-02-03 | 2022-12-27 | Vitae Pharmaceuticals, Llc | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9266886B2 (en) | 2014-02-03 | 2016-02-23 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US10047085B2 (en) | 2014-02-03 | 2018-08-14 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9796710B2 (en) | 2014-10-14 | 2017-10-24 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US10087184B2 (en) | 2014-10-14 | 2018-10-02 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of RORγ |
US9845308B2 (en) | 2014-11-05 | 2017-12-19 | Vitae Pharmaceuticals, Inc. | Isoindoline inhibitors of ROR-gamma |
US11001583B2 (en) | 2014-11-05 | 2021-05-11 | Vitae Pharmaceuticals, Llc | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US9663515B2 (en) | 2014-11-05 | 2017-05-30 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US10301261B2 (en) | 2015-08-05 | 2019-05-28 | Vitae Pharmaceuticals, Llc | Substituted indoles as modulators of ROR-gamma |
US10829448B2 (en) | 2015-08-05 | 2020-11-10 | Vitae Pharmaceuticals, Llc | Substituted benzoimidazoles as modulators of ROR-γ |
US11008340B2 (en) | 2015-11-20 | 2021-05-18 | Vitae Pharmaceuticals, Llc | Modulators of ROR-gamma |
US10829481B2 (en) | 2016-01-29 | 2020-11-10 | Vitae Pharmaceuticals, Llc | Benzimidazole derivatives as modulators of ROR-gamma |
US9481674B1 (en) | 2016-06-10 | 2016-11-01 | Vitae Pharmaceuticals, Inc. | Dihydropyrrolopyridine inhibitors of ROR-gamma |
US10913739B2 (en) | 2017-07-24 | 2021-02-09 | Vitae Pharmaceuticals, LLC (121374) | Inhibitors of RORγ |
US11186573B2 (en) | 2017-07-24 | 2021-11-30 | Vitae Pharmaceuticals, Llc | Inhibitors of ROR gamma |
Also Published As
Publication number | Publication date |
---|---|
CN1212674C (zh) | 2005-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1212674C (zh) | 横向缓冲p型金属氧化物半导体管 | |
CN201910425U (zh) | 一种适用于高低压单片集成的ldmos器件 | |
CN102194818B (zh) | 一种基于p型外延层的bcd集成器件及其制造方法 | |
CN107871778B (zh) | 带有电位浮动型场板的横向双扩散金属氧化物半导体场效应管 | |
CN104282686B (zh) | 宽带隙半导体装置 | |
CN102738232B (zh) | 超结功率晶体管结构及其制作方法 | |
CN108091685A (zh) | 一种提高耐压的半超结mosfet结构及其制备方法 | |
CN207183281U (zh) | 一种可调节开关速度的沟槽栅超结半导体器件 | |
CN110880500B (zh) | 一种全对称ldmos触发scr结构的双向高压esd防护器件 | |
CN208422922U (zh) | 一种优化开关速度的沟槽栅超结半导体器件 | |
CN111933711A (zh) | 一种集成sbd的超结mosfet | |
CN1234174C (zh) | 高压p型金属氧化物半导体管 | |
CN116013960A (zh) | 一种沟槽型mosfet元胞结构及其制备方法 | |
CN1208839C (zh) | 内置保护n型高压金属氧化物半导体管 | |
CN2743978Y (zh) | 多电位场极板横向高压n型金属氧化物半导体管 | |
CN213366605U (zh) | 耐击穿mosfet器件 | |
CN112151533B (zh) | 一种双向导电的功率半导体器件结构 | |
CN210224042U (zh) | 平面结构沟道金氧半场效晶体管 | |
CN208923149U (zh) | 一种n型ldmos器件 | |
CN1221034C (zh) | 高压n型横向双扩散金属氧化物半导体管 | |
CN1212673C (zh) | 内置保护p型高压金属氧化物半导体管 | |
CN106558557A (zh) | 半导体器件的制作方法 | |
CN219873535U (zh) | 一种沟槽型mosfet元胞结构、器件 | |
CN211654830U (zh) | 沟槽型大功率mosfet器件 | |
CN1287467C (zh) | 双栅高压p型金属氧化物半导体晶体管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NANTONG CHAOLI ROLLING MACHINE PRODUCING CO., LTD. Free format text: FORMER OWNER: SOWTHEAST UNIV. Effective date: 20140820 Owner name: SOWTHEAST UNIV. Effective date: 20140820 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 210096 NANJING, JIANGSU PROVINCE TO: 226600 NANTONG, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140820 Address after: 226600 Li Town Industrial Park, Haian County, Nantong, Jiangsu Patentee after: Nantong Chaoli Rolling Machine Producing Co., Ltd. Patentee after: Southeast University Address before: 210096 Jiangsu city Nanjing Province four pailou No. 2 Patentee before: Southeast University |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050727 Termination date: 20160108 |
|
CF01 | Termination of patent right due to non-payment of annual fee |