CN1384520A - 具有低孔隙度高掺杂接触层的硅发射体 - Google Patents

具有低孔隙度高掺杂接触层的硅发射体 Download PDF

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Publication number
CN1384520A
CN1384520A CN02118885.8A CN02118885A CN1384520A CN 1384520 A CN1384520 A CN 1384520A CN 02118885 A CN02118885 A CN 02118885A CN 1384520 A CN1384520 A CN 1384520A
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CN
China
Prior art keywords
silicon
porous
layer
contact layer
porosity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02118885.8A
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English (en)
Chinese (zh)
Inventor
X·圣
N·科施达
H·P·郭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1384520A publication Critical patent/CN1384520A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
CN02118885.8A 2001-04-30 2002-04-30 具有低孔隙度高掺杂接触层的硅发射体 Pending CN1384520A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/845845 2001-04-30
US09/845,845 US6771010B2 (en) 2001-04-30 2001-04-30 Silicon emitter with low porosity heavily doped contact layer

Publications (1)

Publication Number Publication Date
CN1384520A true CN1384520A (zh) 2002-12-11

Family

ID=25296214

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02118885.8A Pending CN1384520A (zh) 2001-04-30 2002-04-30 具有低孔隙度高掺杂接触层的硅发射体

Country Status (4)

Country Link
US (2) US6771010B2 (https=)
EP (1) EP1255272A3 (https=)
JP (1) JP2002343228A (https=)
CN (1) CN1384520A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102651298A (zh) * 2011-02-23 2012-08-29 中国科学院微电子研究所 红外探成像装置及其制备方法
CN110323113A (zh) * 2018-03-30 2019-10-11 夏普株式会社 电子发射元件及其制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003292557A1 (en) * 2002-12-27 2004-07-29 Matsushita Electric Works, Ltd. Field emission-type electron source and method of producing the same
KR100935934B1 (ko) * 2003-03-15 2010-01-11 삼성전자주식회사 전자빔 리소그라피 시스템의 에미터 및 그 제조방법
US7718469B2 (en) * 2004-03-05 2010-05-18 The University Of North Carolina At Charlotte Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
US9249492B2 (en) 2005-11-07 2016-02-02 Micropyretics Heaters International, Inc. Materials having an enhanced emissivity and methods for making the same
US20150050816A1 (en) * 2013-08-19 2015-02-19 Korea Atomic Energy Research Institute Method of electrochemically preparing silicon film
CN110611051B (zh) 2018-06-15 2024-07-16 京东方科技集团股份有限公司 电子装置的制备方法、电子装置及其制备工具

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
US5296388A (en) * 1990-07-13 1994-03-22 Matsushita Electric Industrial Co., Ltd. Fabrication method for semiconductor devices
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
US6187604B1 (en) 1994-09-16 2001-02-13 Micron Technology, Inc. Method of making field emitters using porous silicon
US5556530A (en) 1995-06-05 1996-09-17 Walter J. Finklestein Flat panel display having improved electrode array
US6136684A (en) 1995-07-21 2000-10-24 Canon Kabushiki Kaisha Semiconductor substrate and process for production thereof
KR100239688B1 (ko) 1995-11-20 2000-01-15 김영환 필드 에미션 디스플레이(fed)의 마이크로팁 제조방법
JP3281533B2 (ja) 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子
US5990605A (en) * 1997-03-25 1999-11-23 Pioneer Electronic Corporation Electron emission device and display device using the same
TW391022B (en) * 1997-10-29 2000-05-21 Mitsubishi Rayon Co Field emission electron source, method of producing the same, and use of the same
US6794805B1 (en) 1998-05-26 2004-09-21 Matsushita Electric Works, Ltd. Field emission electron source, method of producing the same, and use of the same
TW436837B (en) 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
US6162716A (en) 1999-03-26 2000-12-19 Taiwan Semiconductor Manufacturing Company Amorphous silicon gate with mismatched grain-boundary microstructure
TW472273B (en) 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
JP3789064B2 (ja) * 1999-10-27 2006-06-21 パイオニア株式会社 電子放出素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102651298A (zh) * 2011-02-23 2012-08-29 中国科学院微电子研究所 红外探成像装置及其制备方法
CN110323113A (zh) * 2018-03-30 2019-10-11 夏普株式会社 电子发射元件及其制造方法
CN110323113B (zh) * 2018-03-30 2021-11-30 夏普株式会社 电子发射元件及其制造方法

Also Published As

Publication number Publication date
EP1255272A3 (en) 2003-08-13
EP1255272A2 (en) 2002-11-06
JP2002343228A (ja) 2002-11-29
US6939728B2 (en) 2005-09-06
US20020190624A1 (en) 2002-12-19
US20040031955A1 (en) 2004-02-19
US6771010B2 (en) 2004-08-03

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