CN1992355A - 太阳能电池及其制造方法 - Google Patents
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Abstract
本发明提供一种太阳能电池的制造方法,该方法包括:在半导体衬底的第一表面上形成发射体层;在所述发射体层上形成绝缘层;在所述绝缘层上以特定图样形成化学化合物,该化学化合物包含与所述发射体层具有相同传导类型的掺杂剂;通过去除其上形成有化学化合物的绝缘层并扩散所述掺杂剂,形成高浓度发射体部分;去除所述化学化合物;以及形成被电连接到所述高浓度发射体部分的第一电极。
Description
技术领域
本发明涉及太阳能电池及其制造方法,更具体地说,涉及一种能够通过简单工艺形成的太阳能电池及其制造方法。
背景技术
太阳能电池可由太阳能产生电能。太阳能电池对环境是有利的,而且其能源也是无尽的。此外,太阳能电池具有很长的使用寿命。太阳能电池的示例包括硅太阳能电池和染料敏化太阳能电池。
硅太阳能电池包括:半导体衬底和发射体层、绝缘层和前电极以及后电极,其中半导体衬底和发射体层构成具有不同传导类型的p-n接触区,绝缘层和前电极形成在该发射体层上,而后电极形成在该半导体衬底上。
发射体层是通过将特定的掺杂剂掺杂到半导体衬底的第一表面上而形成的。考虑到前电极与发射体层之间的接触电阻,该掺杂剂可被掺杂成高浓度。
不过,为了使太阳能电池表面发生的复合最小化,掺杂剂可被掺杂成低浓度。也就是说,当发射体层形成为均一的掺杂浓度时,不能完全满足太阳能电池的必要特性。
考虑到这些,硅太阳能电池已经被设计为形成高浓度发射体部分,而且其与发射体层处于形成前电极的区域。为了形成高浓度发射体部分,采用了一种方法,其中在通过光刻和蚀刻处理对绝缘层进行图样化之后,再另外将掺杂剂进行掺杂。不过,由于该方法需要昂贵的设备和材料来对绝缘层进行图样化,掺杂剂必须另外进行掺杂,因此导致复杂的制造过程。
发明内容
本发明提供一种太阳能电池及其制造方法,其中太阳能电池具有高浓度发射体部分,并能够通过简单和廉价的工艺来进行制造。
根据本发明的一方面,提供一种制造太阳能电池的方法,其包括:在半导体衬底的第一表面上形成发射体层;在所述发射体层上形成绝缘层;在所述绝缘层上以特定图样(pattern)形成化学化合物,该化学化合物包含与所述发射体层具有相同传导类型的掺杂剂;通过去除对应于所述化学化合物的所述绝缘层并将所述掺杂剂朝向所述发射体层扩散,形成高浓度发射体部分;去除所述化学化合物;以及形成被电连接到所述高浓度发射体部分的第一电极。
在本发明的上述方面中,所述掺杂剂可包含磷(P),而所述化学化合物可包含五氧化二磷(P2O5)和/或三氯氧磷(POCl3)。
所述化学化合物可通过使用一方法而形成,所述方法选自由丝网印刷法、配制法(dispensing)、无电镀法、和电镀法所组成的组中。
所述高浓度发射体部分可通过执行用于扩散所述掺杂剂的热退火处理而形成。
所述热退火处理可在850℃-950℃的温度范围内执行。
所述化学化合物的所述图样可对应于该第一电极的图样。
该方法可进一步包括步骤:在所述半导体衬底的第二表面上形成第二电极,使得该第二电极被电连接到所述半导体衬底。
根据本发明的另一方面,提供一种太阳能电池,其包括:半导体衬底;形成在所述半导体衬底上的发射体层;以特定图样形成在所述发射体层上并被电连接到所述发射体层的第一电极;和形成在所述发射体层上的未形成该第一电极的所述图样的区域中的绝缘层;其中,一高浓度发射体部分形成在对应于该第一电极的所述发射体层上,而一不平部分(uneven part)形成在与该第一电极接触的所述绝缘层上。
附图说明
通过参照附图来详细描述本发明的示例性实施例,本发明的上述及其它特征和优点将变得更明显,在附图中:
图1A-图1H为示出根据本发明实施例的太阳能电池的制造过程的剖视图。
具体实施方式
在下文中,将参照附图对太阳能电池及其制造方法的实施例进行描述。
图1A-图1H为示出根据本发明实施例的太阳能电池的制造过程的剖视图。
首先参照图1A,其中制备了由硅形成的p型半导体衬底10。不过,本发明并不仅限于此,因而也可制备n型半导体衬底。此外,半导体衬底可以由除硅以外的各种半导体材料形成。
为改进太阳能电池的特性,可以执行预处理,其中通过在半导体衬底10被蚀刻后使用洗涤溶液,通过利用碱性水溶液或混合酸溶液,来去除杂质。半导体衬底10中的损坏部分通过蚀刻被去除,因而半导体衬底10的表面变得不平。这样,有可能减少太阳能的损失。
随后,如图1B所示,掺杂剂被掺杂在半导体衬底10的前表面上,从而形成n型发射体层12。虽然在本实施例的示例中使用磷(P)作为掺杂剂以形成n型发射体层12,不过也可以使用除磷以外的各种材料作为掺杂剂。本发明并不仅限于此,因此,可使用任何材料,只要其使得发射体层12的传导类型与半导体衬底10的传导类型相反即可。这样,当使用n型半导体衬底时,可形成p型发射体层。
掺杂方法可以有多种,例如,可以为高温扩散方法、喷射方法、丝网印刷方法或离子浴方法。
掺杂之后,可执行通过使用氟酸水溶液来去除不必要形成的磷硅玻璃(PSG)的处理。
随后,如图1C所示,绝缘层14形成在发射体层12上。绝缘层14可为氮化硅层、氧化硅层、或氧化钛层,其可通过使用各种方法,例如,等离子强化化学气相沉积法,电子束沉积法,丝网印刷法,或喷射法而形成。
绝缘层14不仅用于减少入射进来的太阳光线的反射,还用于阻止可能发生在半导体衬底10的表面上的电子损失。也就是说,由于悬空键(danglingbonding),可能在半导体衬底10的表面上发生电子损失,而能够通过形成绝缘层14来对此进行阻止。
随后,如图1D所示,包含磷(P)的化学化合物16通过使用丝网印刷法而在绝缘层14上形成。化学化合物16以与形成在发射体层12上的第一电极(在图1H中用附图标记22表示)相同的图样而形成,使得高浓度发射体部分(在图1E中用附图标记12a表示)位于第一电极22的下方。
在化学化合物16中,磷以五氧化二磷(P2O5)或三氯氧磷(POCl3)的形式存在。虽然使用磷作为掺杂剂,但本发明并不仅限于此。也就是说,可使用任何材料作为掺杂剂,只要化学化合物16包括的掺杂剂具有与发射体层12相同的传导类型,而绝缘层14使用包括通过热退火处理的掺杂剂的化合物来进行刻蚀。
随后,如图1E所示,绝缘层14被刻蚀,从而通过在半导体衬底10上执行热退火处理来形成高浓度发射体部分12a,其中半导体衬底10上形成有发射体层12、绝缘层14和化学化合物16。也就是说,在热退火处理过程中,包含在化学化合物16中的五氧化二磷(P2O5)或三氯氧磷(POCl3)去除位于化学化合物16下方的绝缘层14,而包含在化学化合物16中的磷通过被去除的部分而朝向半导体衬底10被扩散,从而在半导体衬底10上形成高浓度发射体部分12a。
在这种情况下,由于绝缘层14通过已经进行丝网印刷的化学化合物16而被去除,因此,如图1E中的放大电路所示,根据丝网的图样,在绝缘层14a上形成了不平部分14b。
如上所述,在本实施例中,当对绝缘层14进行图样化时,不需要光刻处理或掩膜蚀刻处理。这样,不需要昂贵的设备或材料,而其结果是,能够明显减少制造成本。此外,由于能够形成高浓度发射体部分12a而不需另外的掺杂处理,因此能够简化制造工艺。
热退火处理可在850℃-950℃的温度范围内执行。在超出950℃的高温条件下,半导体衬底10更有可能在热退火处理中被损坏。而在低于850℃的低温条件下,扩散的进行可能不够充分。
在热退火处理中,红外灯、烧炉等可用作热源。例如,当使用红外灯时,热退火处理可执行10秒至10分钟。
随后,如图1F所示,使用超纯水洗涤半导体衬底10,从而去除化学化合物16。在这种情况下,考虑到组成化学化合物16的材料,可使用表面活性剂。
然后,如图1G所示,铝料被丝网印刷在半导体衬底10的后表面上,然后执行热退火处理。其结果是,形成了被电连接到半导体衬底10的第二电极18。不过,本发明并不仅限于此。因此,第二电极18可由各种材料形成,而这也包括在本发明的范围之内。
铝通过热退火处理在半导体衬底10的后表面被扩散到一预定的厚度,从而形成p+型的后电场层20。后电场层20形成电场,以便阻止光激发的电子移动到半导体层10的后表面。
随后,如图1H所示,第一电极22形成在半导体衬底10的前表面上,使得第一电极22对应于去除了化学化合物16的区域,也就是,高浓度发射体部分12a。第一电极22可通过使用各种方法形成,例如使用无电镀法、电镀法、喷墨法、或配制法形成。例如,第一电极22可由银(Ag)形成。
在本实施例的太阳能电池中,由于第一电极22形成在高浓度发射体部分12a,因此能够有效减小接触电阻。另外,由于浓度相对较低的发射体层12形成在未形成第一电极22的区域,因此有可能减小电荷损失。
当光入射到根据上述制造方法所制造的太阳能电池时,通过光电效应而形成的正空穴-电子对被分开,因而电子被积聚在n型发射体层12上,而正空穴被积聚在p型半导体衬底10上,从而产生电势差。该电势差允许电流流过第一电极22、第二电极18和外部电路(未示出)。如上所述,半导体衬底10的传导类型以及发射体层12和高浓度发射体部分12a的传导类型,能够以各种方式被修改,而这也包括在本发明的范围之内。
根据本发明的太阳能电池的制造方法,通过使用能够蚀刻绝缘层的化学化合物,能够以低成本对绝缘层进行图样化。该化学化合物包括与发射体层具有相同传导类型的掺杂剂,从而能够形成高浓度发射体部分,而同时将绝缘层图样化而无需另外的掺杂处理。这样,使用简单的工艺,就能够制造具有高浓度发射体部分的太阳能电池。
此外,由于第一电极形成在高浓度发射体部分上,因此,能够减小接触电阻。另外,由于浓度相对较低的发射体层形成在未形成第一电极的区域,因此,有可能减少电荷损失。因此,能够改进太阳能电池的各种特性。
虽然已经对本发明的示例性实施例和修改的示例进行了描述,但本发明并不仅限于这些实施例和示例,而是在不偏离本发明的所附权利要求书、详细的说明书以及附图的范围下,可以各种不同的形式进行修改。因此,实质上这种修改也属于本发明的范围。
Claims (9)
1、一种太阳能电池的制造方法,包括:
在半导体衬底的第一表面上形成发射体层;
在所述发射体层上形成绝缘层;
在所述绝缘层上以特定图样形成化学化合物,该化学化合物包含与所述发射体层具有相同传导类型的掺杂剂;
通过去除对应于所述化学化合物的所述绝缘层并将所述掺杂剂朝向所述发射体层扩散,形成高浓度发射体部分;
去除所述化学化合物;以及
形成被电连接到所述高浓度发射体部分的第一电极。
2、如权利要求1所述的方法,其中所述掺杂剂包含磷P。
3、如权利要求1所述的方法,其中所述化学化合物包含五氧化二磷P2O5和/或三氯氧磷POCl3。
4、如权利要求1所述的方法,其中所述化学化合物通过使用一方法而形成,所述方法选自由丝网印刷法、配制法、无电镀法和电镀法所组成的组中。
5、如权利要求1所述的方法,其中所述高浓度发射体部分通过执行用于扩散所述掺杂剂的热退火处理而形成。
6、如权利要求5所述的方法,其中所述热退火处理在850℃-950℃的温度范围内执行。
7、如权利要求1所述的方法,其中所述化学化合物的所述图样对应于该第一电极的图样。
8、如权利要求1所述的方法,进一步包括步骤:在所述半导体衬底的第二表面上形成第二电极,使得该第二电极被电连接到所述半导体衬底。
9、一种太阳能电池,包括:
半导体衬底;
形成在所述半导体衬底上的发射体层;
以特定图样形成在所述发射体层上并被电连接到所述发射体层的第一电极;和
形成在所述发射体层上的未形成该第一电极的所述图样的区域中的绝缘层;其中
一高浓度发射体部分形成在对应于该第一电极的所述发射体层上,而一不平部分形成在与该第一电极接触的所述绝缘层上。
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