CN1380572A - Chemical polishing method and device for liquid crystal glass base plate - Google Patents
Chemical polishing method and device for liquid crystal glass base plate Download PDFInfo
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- CN1380572A CN1380572A CN02105963A CN02105963A CN1380572A CN 1380572 A CN1380572 A CN 1380572A CN 02105963 A CN02105963 A CN 02105963A CN 02105963 A CN02105963 A CN 02105963A CN 1380572 A CN1380572 A CN 1380572A
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- C—CHEMISTRY; METALLURGY
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/60—Glass recycling
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Abstract
The invention provides a chemical polishing method for a liquid crystal glass substrate and chemical polishing apparatus and the chemical polishing liquid has a fluoride mixture at least one selected from the group consisting of fluoric acid, ammonium fluoride, potassium fluoride, and sodium fluoride, and inorganic acid at least one selected from the group consisting of hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, and organic acid at least one selected from the group consisting of acetic acid and succinic acid, and anion-based surfactant of sulfonate-based surfactant, and amine-based ampho-surfactant.
Description
Technical field
The invention relates to the chemically polishing method of liquid crystal glass base and implement in the chemical polishing device that uses.This method can be carried out chemical polishing to the outside surface of liquid crystal glass base or the outside surface of the liquid crystal glass base after a pair of applying.
Background technology
The finishing method of liquid crystal glass base in the past has mechanical polishing method and chemical polishing.Recently, the quality improving for liquid crystal glass base has proposed following requirement: (1) is for the elimination that originally is present in the surface scratch on the liquid crystal glass base; (2) after the film of patterning is peeled off, the elimination of the pattern vestige of on substrate, retaining; (3) when the thickness of slab with liquid crystal glass base carries out attenuate, the raising of this plate surface; (4) for the elimination of the outside surface cut that originally is present in the liquid crystal glass base after a pair of applying; (5) when the thickness of slab with the outside surface of the liquid crystal glass base after a pair of applying carries out attenuate, the raising of this plate surface;
Require for above-mentioned these quality improvings, adopt mechanical polishing method in the past, exist deficiency, the glass substrate of substrate surface flatness that the unavoidable problem such as restriction that fragmentation and substrate surface easily produce residual, the polishing ability of cut, polishing apperance easily take place.Particularly for nearest large substrate, these problems seem more serious.
On the other hand, chemical polishing in the past, originally very difficult elimination is present in surface scratch and the pattern vestige on the liquid crystal glass base, variety of problems below when substrate thickness is carried out attenuate, also easily taking place in the example, the level of quality when being difficult to guarantee to reach polished surface and not having the new glass of cut and pattern vestige.
For example, in No. 2722798 communique of special permission, a kind of method of the surface of liquid crystal glass base being carried out etching is disclosed: have on a pair of glass substrate of a plurality of liquid crystal display areas, the liquid crystal inclosure field of each display unit is separated and bonding the aggregate of composition display unit with encapsulant.It is in the etching liquid of basis that this aggregate is impregnated into hydrofluorite, and the outside surface of liquid crystal glass base is carried out etching.Though this method can make the thickness of slab attenuate of glass substrate, have the problem that produces the aftermentioned defective.
And for example, open in the 2000-147474 communique the spy, disclose a kind of surface and carried out the automatic etching device of etching: in the bottom of the storage tank of the etching liquid that contains hydrofluorite liquid crystal glass base, bubble generator is housed, the bubble that is produced by this bubble generator stirs above-mentioned etching liquid, makes the surface of the glass substrate in etching liquid groove be subjected to etching.But, under the situation of the outside surface of liquid crystal glass base being polished, have the problem that produces the aftermentioned defective with 15～17% hydrofluorite.
In this invention, want to utilize the rising bubble of nitrogen that polishing fluid is stirred, to realize uniform polish to glass surface.But in fact there are the following problems: bubble that has risen and polishing fluid descend after arriving liquid surface, and the homogeneity that the mobile impairment of this decline is risen and flowed makes surperficial polishing inaccessible homogeneous.
When carrying out the polishing of 50～300 μ m thickness with the chemically polishing method in the past shown in two above-mentioned examples, have following problem: (1) is even also can confirm to produce gonorrhoea under fluorescent light; (2) indenture that diameter is 0.2mm to the maximum takes place.Illustrated among Figure 14 by the surface condition after the polishing of surface roughness meter mensuration; (3) diameter of indenture increases along with the increase of polished amount.The diameter of indenture and the relation of polished amount have been shown among Figure 15; (4) lip-deep indenture is the most nearly 50/square centimeter.Figure 16 is the indenture number of unit area and the graph of a relation of polished amount; As can be seen from Figure 16, the indenture number of unit area increases with the increase of polished amount; (5) under fluorescent light, can observe the generation external waviness.The situation of the external waviness of surface of polished has been shown among Figure 17; (6) thickness of slab is inhomogeneous, and the difference between its maximal value and minimum value is between 20～100 μ m; (7) before polishing, on glass surface, make cut artificially, this cut width after polishing increases, the degree of depth is deepened (referring to Figure 18 and Figure 19).Figure 18 be before polishing deliberately behind surface scratch, the sectional drawing that this is surperficial.Figure 19 is the surperficial sectional drawing after the polishing.
For another example: sputter is being carried out with chromium (Cr) earlier in the liquid crystal glass base surface, after the picture element of using with chromatic filter carries out graphically then, when this substrate becomes bad, usually carry out mechanical buffing after the chromium film after graphical being peeled off, the figure vestige can be eliminated, and the glass substrate after this polishing can be used as the new glass substrate again.But when the chemical polishing replacement mechanical buffing of using in the past, the figure vestige is not eliminated, and can not use as the new glass substrate again.
The present invention is in view of the problem of above existence, and purpose is to provide a kind of chemically polishing method that can obtain the liquid crystal glass base of the high liquid crystal glass base of surface.This method adopts the chemical brightening solution of the potpourri, mineral acid, organic acid, anionic surfactant and the amphoteric surfactant that contain hydrofluorite and fluoride, liquid crystal glass base is flooded, the outside surface of liquid crystal glass base is polished with 0.5～10 μ m/ minute speed, and resultant of reaction such as silicofluoride are not adhered on the surface of liquid crystal glass base again, can access the high liquid crystal glass base of surface.
In addition, the present invention also aims to provide when can obtain the high liquid crystal glass base of uniform surface flatness, can also eliminate surface scratch, can realize the chemically polishing method and the chemical polishing device of the liquid crystal glass base that utilizes again of glass.Form the liquid stream that rises by the bubble that produces from chemical brightening solution storage tank bottom, this liquid stream overflows from edge last week of chemical brightening solution storage tank, after the filter filtration, offer the chemical brightening solution storage tank once more, make that like this total surface of liquid crystal glass base is to maintain fresh polishing fluid to supply with, the physics adventitious deposit again of product prevents to respond on the liquid crystal glass base surface, thereby the thickness that makes liquid crystal glass base is attenuate, substrate surface equably planarization the time gradually, the cut on surface is eliminated, and obtains the glass substrate that can utilize again.
Have again, the present invention also aims to provide a kind of chemical polishing device.This device is furnished with the utensil of placing liquid crystal glass base, and this utensil can be placed one or polylith liquid crystal glass base, and this liquid crystal glass base can be a monolithic, also can be after a pair of liquid crystal glass base is fitted.Utilize this device to polish uniformly simultaneously to the liquid crystal glass base of multi-disc or the liquid crystal glass base after a pair of applying.
Also have, the present invention also aims to provide a kind of chemical polishing device.This device is furnished with ultrasonic vibrator or shakes stirrer.Utilize this device to carry out more uniform stirring to chemical brightening solution.
The chemically polishing method of the liquid crystal glass base in the 1st invention is characterized in that, liquid crystal glass base is flooded in chemical brightening solution, and the outside surface of liquid crystal glass base is polished with 0.5～10 μ m/ minute speed.This chemical brightening solution contains the mixed liquor (fluoride wherein comprises one or more in ammonium fluoride, potassium fluoride and the sodium fluoride) of hydrofluorite and fluoride, one or more the mineral acid that contains hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succinic acid contains the anionic surfactant and the amine amphoteric surfactant of sulfonate surfactant.
The mixed liquor of hydrofluorite and fluoride (fluoride wherein comprise in ammonium fluoride, potassium fluoride and the sodium fluoride any or multiple), one or more the mineral acid that contains hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, contain one or more organic acid of acetic acid and succinic acid, can carry out chemical polishing to liquid crystal glass base, and can make not adventitious deposit again of resultant of reaction such as silicofluoride on the surface of liquid crystal glass base.
Contain the anionic surfactant of sulfonate surfactant and amine amphoteric surfactant etc. and also be in order to make resultant of reaction such as silicofluoride not adventitious deposit and the auxiliary agent that adds again on the surface of liquid crystal glass base.
Therefore, use these compositions can make the high liquid crystal glass base of surface.
When polishing velocity was too fast, the surface of liquid crystal glass base was easy to generate external waviness and indenture.Therefore, polishing velocity is with about 0.5～10 μ m/ minute, particularly with 1～5 μ m/ minute for well.
Adopt above-mentioned chemical brightening solution, and guarantee the surface of liquid crystal glass base to be polished, can when making the thickness of slab attenuate of liquid crystal glass base, improve the surface of glass substrate with above-mentioned polishing velocity.
The chemically polishing method of the liquid crystal glass base in the 2nd invention is characterized in that, in the 1st invention, by producing bubble in the storage tank bottom that stores above-mentioned chemical brightening solution, produces rising liquid stream.
The chemically polishing method of liquid crystal glass base in the 3rd invention is characterized in that, in the 2nd invention, the rising liquid stream that makes aforementioned generation overflows from the upper edge of the storage tank that stores above-mentioned chemical brightening solution.
The chemically polishing method of the liquid crystal glass base in the 4th invention is characterized in that, in the 3rd invention, makes the above-mentioned chemical brightening solution that overflows from the upper edge of storage tank supply with above-mentioned chemical brightening solution storage tank more again.
The chemically polishing method of the liquid crystal glass base in the 5th invention, it is characterized in that, in the 4th invention, the above-mentioned chemical brightening solution that overflows from the upper edge of the storage tank filtrator of flowing through is filtered, after the resultant of reaction that produces in the polishing process is removed, resupply above-mentioned chemical brightening solution storage tank.
In the 2nd to the 5th invention, because chemical brightening solution is evenly risen, can provide fresh polishing fluid at the total surface of liquid crystal glass base, can prevent that simultaneously resultant of reaction is at liquid crystal glass base Surface Physical adventitious deposit again.
Polishing velocity is by rate of propagation and reaction velocity decision, but the projection on liquid crystal glass base surface owing to be subjected to the moving influence of bubble upward flow, always can obtain active chemical brightening solution, played a leading role by the reaction velocity law, it is very fast that polishing velocity becomes.In contrast, the recess on liquid crystal glass base surface, not smooth because of flowing of polishing fluid, play a leading role by diffusion law, polishing velocity is slack-off.Therefore, can flow with the rising of bubble and control polishing velocity, thereby can when making the liquid crystal glass base reduced thickness, the flatness on surface be improved.
In addition, can eliminate the cut that originally is present in the liquid crystal glass base surface, make the utilization again of glass become possibility.
The 3rd invention has been eliminated the chemical brightening solution that rises and has been descended behind the surface that arrives the chemical brightening solution storage tank, thereby stops the drawback of the even rising of back chemical brightening solution, and the liquid crystal glass base surface is polished more equably.
The 4th invention can make chemical brightening solution recycle smoothly.
The 5th invention has stoped the adventitious deposit of the resultant of reaction in the chemical brightening solution on the liquid crystal glass base surface.
The chemical polishing device of the 6th invention comprises the chemical brightening solution storage tank and the following apparatus that store chemical brightening solution: the bubble generator that imports gas and gas is spued and partly spues from bubble, described bubble spue and partly are made of porous materials; Be installed in the spillage dump tank of above-mentioned storage chemical brightening solution storage tank circumference, this groove is used to accept the chemical brightening solution that overflows from this storage tank; Be used to remove the filtrator that polishes the reaction production thing that produces; Chemical brightening solution after the above-mentioned filtrator filtration is transported to pump used in the chemical brightening solution storage tank once more; Be installed in the chemical brightening solution blowoff of above-mentioned bubble generator downside, this device has a plurality of holes, is used for above-mentioned chemical brightening solution with pump output is sprayed to the bottom of chemical brightening solution storage tank.
Utilize the chemical polishing device of the 6th invention, chemical brightening solution is evenly risen, overflow, after resultant of reaction removed, flow to the polishing fluid accumulator tank once more, polishing fluid is recycled, and the total surface of liquid crystal glass base is to have fresh polishing fluid to supply with, and can prevent that resultant of reaction from carrying out physics adventitious deposit again on the liquid crystal glass base surface simultaneously.
The projection on liquid crystal glass base surface owing to be subjected to the moving influence of bubble upward flow, always can obtain the activity chemistry polishing fluid, is played a leading role by the reaction velocity law, and it is very fast that its polishing velocity becomes.In contrast, the recess on liquid crystal glass base surface, not smooth because of flowing of polishing fluid, play a leading role by diffusion law, polishing velocity is slack-off, thereby can when making the liquid crystal glass base reduced thickness flatness on surface be improved.
The chemical polishing device of the 7th invention, it is characterized in that in the 6th invention, being furnished with the utensil of placing liquid crystal glass base, this utensil can be placed one or polylith liquid crystal glass base, and this liquid crystal glass base can be monolithic also can be after a pair of liquid crystal glass base is fitted.
Utilize the device of the 7th invention to polish uniformly simultaneously to the liquid crystal glass base of multi-disc or the glass substrate after a pair of applying.
The chemical polishing device of the 8th invention is characterized in that, in the chemical polishing device described in the 6th or the 7th invention, is equipped with ultrasonic vibrator or shakes stirrer.
Utilize the chemical polishing device of the 8th invention to carry out more uniform stirring to chemical brightening solution.
Description of drawings
The cross sectional representation of [Fig. 1] chemical polishing device of the present invention.
The stereographic map of [Fig. 2] bubble generator of the present invention.
The stereographic map of the bubble generator of [Fig. 3] other kind of the present invention.
[Fig. 4] chemical brightening solution storage tank of the present invention and liquid crystal glass base are placed the floor map of utensil with the fixed retainer tool.
The stereographic map of [Fig. 5] chemical brightening solution blowoff of the present invention.
The interpolation ratio figure of [Fig. 6] polishing velocity and 10 kinds of compositions of chemical brightening solution.The graph of a relation of [Fig. 7] polishing velocity and temperature.The measurement of plate thickness position plane synoptic diagram of [Fig. 8] (2) glass substrate.[Fig. 9] chemical polishing front and rear surfaces cut has or not condition survey result's floor map.[Figure 10] (2) glass substrate sample surfaces state fixed result schematic diagram of surface roughness instrumentation.Cut has or not condition survey result's floor map before and after [Figure 11] chemical polishing.The floor map of the sample outer surface measurement of plate thickness position after [Figure 12] two (2) glass substrates are fitted.The floor map of the measurement of plate thickness position, the inside, the sample outside after [Figure 13] two (2) glass substrates are fitted.The measurement result synoptic diagram of the sample surfaces after [Figure 14] polishes with traditional finishing method.[Figure 15] indenture diameter and polished amount concern synoptic diagram.Indenture number of [Figure 16] unit area and polished amount concern synoptic diagram.The external waviness situation synoptic diagram of [Figure 17] polishing back sample.The cross sectional representation of intentional cut glass baseplate surface before [Figure 18] polishing.The cross sectional representation of [Figure 19] polishing back sample surfaces.[symbol description] 1 chemical polishing device 13 spillage dump tanks 11 chemical brightening solution storage tanks 14 filtrators 12 bubble generators 15 pump 12a bubble ejection portion 16 chemical brightening solution blowoffs, 17 liquid crystal glass bases are placed the fixed retainer tool 18 liquid crystal glass bases placement utensil that utensil is used
Below, with reference to accompanying drawing embodiment of the present invention are specifically described.
Fig. 1 is the sectional view of the chemical polishing device of explanation embodiment of the present invention.Wherein, the 1st, the chemical polishing device.
In the chemical polishing device 1, be provided with chemical brightening solution storage tank 11; In the bottom of chemical brightening solution storage tank 11, have to import the bubble generator 12 that gas is used, the bubble of this device part 12a that spues is made of porous materials; At the upside of bubble generator 12, the utensil 18 of placing liquid crystal glass base is housed, this utensil can make a pair of liquid crystal glass base after liquid crystal glass base or the applying vertically insert.The placement utensil 18 of this liquid crystal glass base is configured in liquid crystal glass base and places in the fixed retainer tool 17 that utensil uses.
In chemical brightening solution storage tank 11, fill chemical brightening solution, this chemical brightening solution contain hydrofluorite and fluoride mixed liquor (fluoride wherein comprise in ammonium fluoride, potassium fluoride and the sodium fluoride any or multiple), one or more the mineral acid that contains hydrochloric acid, sulfuric acid, phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succinic acid contains the anionic surfactant and the amine amphoteric surfactant of sulfonate surfactant.
Around the coboundary of chemical brightening solution storage tank 11, be equiped with the spillage dump tank 13 of the chemical brightening solution that acceptance overflows from chemical brightening solution storage tank 11.In spillage dump tank 13, be connected with and be used for removing reaction that polishing produces and produce the filtrator 14 of thing and the chemical brightening solution after the above-mentioned filtration is transported to the used pump 15 of storage tank 11 once more.In addition, downside at above-mentioned bubble generator 12 is provided with chemical brightening solution blowoff 16, the 16a of ejection portion of this device has a plurality of holes, be used for and spray to the bottom of chemical brightening solution storage tank from the chemical brightening solution of said pump 15 outputs, utilize blowoff 16 once more chemical brightening solution to be supplied with storage tank 11.
In the chemical polishing device 1, ultrasonic vibrator can also be set or shake stirrer (not illustrating among the figure),, can realize more uniform stirring chemical brightening solution ultrasonic vibrator being set or shaking under the situation of stirrer.
Fig. 2 is the stereographic map of bubble generator 12.Bubble generator 12 is made up of with the several tubulose bubble ejection portion 12as that are connected parallel with gas introduction tube 12b the gas introduction tube 12b of gases such as importing nitrogen, and this tubulose bubble ejection 12a of portion is made of porous materials.
Fig. 3 is the stereographic map of the bubble ejection 12a of portion of other type bubble generator 12.The bubble ejection 12a of portion of the type bubble generator 12 is made of porous materials, for tabular.
Among Fig. 2 and Fig. 3, the aperture of the bubble squit hole of bubble ejection portion is 10～500 μ m for well.These bubble generators 12 are arranged at the downside that liquid crystal glass base is placed the fixed retainer tool 17 that utensil uses, and with micro-bubble upwards ejection from these pores, the micro air bubble of ejection evenly rises chemical brightening solution.It is fresh polishing fluid that this rising liquid stream offers the liquid crystal glass base total surface, can prevent that simultaneously resultant of reaction such as silicofluoride from carrying out adventitious deposit again on the liquid crystal glass base surface.
The ascending fluid of micro air bubble overflows around the coboundary of chemical brightening solution storage tank 11 behind the surface that arrives chemical brightening solution, is accepted by spillage dump tank 13 then, through behind the filtrator 14, offers chemical brightening solution storage tank 11 once more.
Under the situation that chemical brightening solution can not overflow, the cross-sectional area of rising fluid diversion decline liquid stream part hour, decline liquid stream is staggered in rising liquid stream, the homogeneity of the liquid stream of can not guaranteeing to rise.
Fig. 4 is the planimetric map that chemical brightening solution storage tank 11 and liquid crystal glass base are placed the fixed retainer tool 17 that utensil uses.As shown in Figure 4, be equivalent to liquid crystal glass base place the fixed retainer tool 17 that utensil uses Outboard Sections decline liquid stream pass through cross-sectional area be equivalent to liquid crystal glass base place the fixed retainer tool 17 that utensil uses inside part rising liquid stream pass through 1～3 times of cross-sectional area the time, the homogeneity that the verified liquid of can guaranteeing to rise flows.
Product that the composition of liquid crystal glass base and chemical brightening solution react such as silicofluoride etc., upward flow with micro air bubble is known from experience rising, if but these resultant of reaction circulate and be deposited on the bottom of chemical brightening solution storage tank 11, can influence the ejection of micro air bubble in chemical brightening solution storage tank 11.Therefore, be necessary to prevent the deposition of resultant of reaction in chemical brightening solution storage tank 11 bottoms.
Fig. 5 is the stereographic map of chemical brightening solution blowoff 16.In this chemical brightening solution blowoff 16, be provided with a plurality of chemical brightening solution ejection 16a of portion that have a plurality of holes separately parallel to each other, the chemical brightening solution that is transferred out by pump 15 is sprayed downwards or tiltedly by this chemical brightening solution ejection 16a of portion, in the providing chemical polishing fluid, also can prevent the accumulation of resultant of reaction.
The method of control liquid crystal glass base polishing velocity, the measures such as temperature of the composition of the polishing fluid that changes and change polishing fluid.
Fig. 6 is the relation curve of the interpolation ratio of polishing velocity and 10 kinds of compositions of chemical brightening solution.This chemical brightening solution is the aqueous solution that contains 10 kinds of components such as hydrofluorite, ammonium fluoride, potassium fluoride, hydrochloric acid, sulfuric acid, phosphoric acid, nitric acid, acetic acid, sulfonate surfactant, amine surfactant.
As can be seen from Figure 6, when the interpolation ratio of 10 kinds of compositions in the above-mentioned chemical brightening solution was 10%, polishing velocity was 1.1 μ m/ minutes; Along with the increase polishing velocity of adding ratio also can increase; When the interpolation ratio was 40%, polishing velocity reached maximal value, is 3.7 μ m/ minutes; Reduce a little subsequently, till the interpolation ratio was 90%, polishing velocity approximately remained on about 3 μ m/ minutes.
Add ratio 30% when following, polishing velocity is slower; On the other hand, add ratio 70% when above, glass surface produces gonorrhoea, and adhering at glass surface formation resultant of reaction residue.Therefore, be the control polishing velocity, add ratio and remain on 30～60% for well.
In addition, polishing velocity is in the time of 3.0～3.5 μ m/ minutes, and the Size Error of polished amount is out of question in the scope that allows.When being controlled in the scope of 20 μ m with the Size Error of polished amount, 0.5 μ m/ minute polishing velocity difference is equivalent to error (0.5 (μ m/ minute) * 40 (minute)=20 (the μ m) of 40 minutes polishing time), the error of polishing time is in allowed band.
Fig. 7 is the relation curve of polishing velocity and temperature.Horizontal ordinate among this figure is the side-play amount with respect to reference temperature, and ordinate is a polishing velocity.
As can be seen from Figure 7, though along with the rising of temperature, polishing velocity slowly increases, and polishing velocity is between-5 ℃ to+5 ℃ the time in temperature, and 0.5 μ m/ minute difference is only arranged.
Therefore, when the Size Error of polished amount was controlled in the scope of 20 μ m, the error of polishing time can allow in 40 minutes.
When reality is implemented, in advance that laboratory sample is pre-soaked in the storage tank 11 of chemical brightening solution, determine that from the situation of change of this sample thickness of slab polishing velocity is for well.
Embodiment
Below, by embodiment the present invention is specifically described.[embodiment 1]
Adopt chemical polishing device 1 of the present invention, the brand-new glass sample of following size is carried out chemical polishing: (1) 320 * 400 * 1.1 (mm), (2) 400 * 500 * 0.7 (mm), target polished amount is respectively 0.3mm and 0.2mm.
At first, the composition that changes chemical brightening solution is examined or check to polishing velocity and to the influence of glass surface state, its result is as shown in table 1.
Table 1
| Polishing velocity μ m/ minute | ??0.5 | ??1.0 | ??3.0 | ??5.0 | ??10.0 | ??13.0 | ??15.0 |
| Indenture | Do not have | Do not have | Do not have | Do not have | Do not have | Have | Have |
| External waviness | Do not have | Do not have | Do not have | Do not have | Do not have | Have | Have |
| The thickness of slab error | Little | Little | Little | Little | Little | In | Greatly |
| Former cut | Do not have | Do not have | Do not have | Do not have | Do not have | Have | Have |
In the table 1, having or not of indenture, external waviness and former cut is the result who estimates under the clean room intrinsic fluorescence lamp in darkroom.
Fig. 8 is the schematic plan view that locates of (2) glass substrate thickness of slab.In the table 1, to each position shown in Fig. 8, measure thickness of slab with supersonic thickness meter, error is represented the difference of its maximal value and minimum value.Here " little " represented error below 50 μ m, " in " be 100～200 μ m, " greatly " is more than the 200 μ m.
According to the result of table 1, from the quality and the production operation viewpoint of product, polishing velocity 0.5～10 μ m/ minute for well, particularly in 1～5 μ m/ minute scope, suitable.
Polishing velocity was controlled at 2～3 μ m/ minutes, was sample with (2) glass substrate, had the situation of no marking to examine or check with method of the present invention to before and after the chemical polishing.
Fig. 9 is the schematic plan view as a result that the situation that no marking is arranged before and after the chemical polishing is examined or check.
As can be seen from Figure 9, the observed cut of energy disappears after polishing before the polishing.
Polishing velocity was controlled at 2～3 μ m/ minutes, was sample with (1) and (2) glass substrate, and to each position shown in Fig. 8, the thickness of slab of measuring with supersonic thickness meter the results are shown in table 2.
Table 2 (mm)
??????????(1)??????????(2)??????????(1)??????????(2)
| Target polished amount | ????1 | ????2 | ????3 | ????4 | ????5 | ||
| ?320×400×1.1t | ????0.3 | ????0.836 | ????0.809 | ????0.810 | ????0.825 | ??0.809 | |
| ?00×500×0.7t | ????0.2 | ????0.530 | ????0.529 | ????0.530 | ????0.530 | ??0.526 | |
| ????6 | ????7 | ????8 | ????9 | Error | |||
| ?320×400×1.1t | ????0.810 | ????0.823 | ????0.810 | ????0.809 | ????0.026 | ||
| ?400×500×0.7t | ????0.530 | ????0.531 | ????0.529 | ????0.542 | ????0.016 | ||
Figure 10 is a synoptic diagram of the surface state of (2) glass substrate sample being examined or check the result with the surface roughness meter.
Can find out from the result of table 2 and Figure 10, adopt chemically polishing method of the present invention, when reaching target polished amount, can obtain the glass substrate that the substrate surface each point is even, have an even surface.[embodiment 2]
The picture element of using with chromium (Cr) and chromatic filter to glass baseplate surface carry out graphical after, this substrate becomes undesirable.Therefore, be to eliminate the figure vestige, after chromium is peeled off, it is polished with chemical polishing device of the present invention 1.The degree of depth of figure vestige is about 1 μ m.After polishing, the result who in the clean room in darkroom, under the light source of about 10,000 luxs, estimates, this figure vestige disappears.[embodiment 3]
Two above-mentioned (2) glass substrates are fitted, obtain one group of glass substrate sample after the applying.Adopt chemical polishing device 1 of the present invention to polish in this sample.Target polished amount is 0.2mm.
Figure 11 is the schematic plan view as a result that the situation that no marking is arranged before and after the chemical polishing is examined or check.
As can be seen from Figure 11, the observed cut of energy disappears after polishing before the polishing.
Figure 12 is the floor map that the outer surface of the sample after two (2) glass substrates are fitted carries out the measurement of plate thickness position.Figure 13 is the floor map that the measurement of plate thickness position is carried out in the inside, the outside of the sample after two (2) glass substrates are fitted.
Provided the measurement result of above-mentioned surperficial thickness of slab in the table 3; Provided the measurement result of above-mentioned the inside thickness of slab in the table 4.
Table 3 (mm)
| The position | ????1 | ????2 | ????3 | ????4 | ????5 |
| Thickness of slab | ????0.510 | ????0.508 | ????0.500 | ????0.503 | ????0.504 |
| The position | ????6 | ????7 | ????8 | ????9 | Error |
| Thickness of slab | ????0.508 | ????0.506 | ????0.510 | ????0.508 | ????0.010 |
Table 4 (mm)
| The position | ????11 | ????12 | ????13 | ????14 | ????15 |
| Thickness of slab | ????0.506 | ????0.500 | ????0.505 | ????0.505 | ????0.500 |
| The position | ????16 | ????17 | ????18 | ????19 | Error |
| Thickness of slab | ????0.510 | ????0.506 | ????0.508 | ????0.512 | ????0.012 |
Can find out from table 3 and table 4, use chemically polishing method of the present invention, can carry out more uniform polishing glass substrate.
Above result shows, adopts chemical polishing device 1 of the present invention to carry out chemical polishing, in the thickness of slab attenuate of liquid crystal glass base, can make the flattening surface of glass substrate.And, can also eliminate the cut that comes into existence in glass baseplate surface, make the utilization again of glass become possibility.
In addition, adopt chemically polishing method of the present invention,, can both carry out large-duty polishing no matter how many sizes of liquid crystal glass base is.
Moreover chemical polishing device 1 of the present invention is not limited to the pattern of front implementation, can carry out various changes.
As described above in detail, under the situation of the 1st invention, employing contains the mixed liquor of hydrofluorite and fluoride, and (fluoride wherein comprises ammonium fluoride, in potassium fluoride and the sodium fluoride any or multiple), contain hydrochloric acid, sulfuric acid, the mineral acid of one or more of phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succinic acid, contain the anionic surfactant of sulfonate surfactant and the chemical brightening solution of amine amphoteric surfactant, the control polishing velocity is between 0.5～10 μ m/ minute, outside surface to liquid crystal glass base carries out chemical polishing, can when making the thickness of slab attenuate of liquid crystal glass base, make the glass baseplate surface planarization.
Under the situation of the 2nd to the 5th invention, because chemical brightening solution is evenly risen, can always provide fresh polishing fluid on the surface of liquid crystal glass base, can prevent that simultaneously resultant of reaction is at liquid crystal glass base Surface Physical adventitious deposit again.Therefore, can flow with the rising of bubble and control polishing velocity, thereby can when making the reduced thickness of liquid crystal glass base, make more planarization of surface.
In addition, adopt chemically polishing method of the present invention,, can both carry out high productivity, polishing uniformly no matter how many sizes of liquid crystal glass base is.
Have again, adopt chemically polishing method of the present invention, can eliminate the cut that originally is present in the liquid crystal glass base surface, make the utilization again of glass become possibility.
Under the situation of the 6th invention, chemical brightening solution is evenly risen, overflow from the storage tank edge after rising to the top, after resultant of reaction removed, flow to the polishing fluid storage tank once more, polishing fluid is recycled, and the total surface of liquid crystal glass base is to have fresh polishing fluid to supply with, and can prevent that resultant of reaction from carrying out physics adventitious deposit again on the liquid crystal glass base surface simultaneously.
The projection on liquid crystal glass base surface owing to be subjected to the moving influence of bubble upward flow, always can obtain activated polishing liquid, is played a leading role by the reaction velocity law, and it is very fast that its polishing velocity becomes.In contrast, the recess on liquid crystal glass base surface, not smooth because of flowing of polishing fluid, play a leading role by diffusion law, polishing velocity is slack-off, thereby can make flattening surface when making the liquid crystal glass base reduced thickness.
Under the situation of the 7th invention, can polish uniformly simultaneously the liquid crystal glass base of multi-disc or the glass substrate after a pair of applying.
Under the situation of the 8th invention, because be equipped with ultrasonic vibrator or shake stirrer, so, can carry out more uniform stirring to chemical brightening solution.
Claims (8)
1. the chemically polishing method of liquid crystal glass base, it is characterized in that, liquid crystal glass base is immersed in the chemical brightening solution, the outside surface of liquid crystal glass base is polished with 0.5～10 μ m/ minute speed, described chemical brightening solution contains the mixed liquor of hydrofluorite and fluoride, contain hydrochloric acid, sulfuric acid, the mineral acid of one or more of phosphoric acid and nitric acid, one or more the organic acid that contains acetic acid and succinic acid, contain the anionic surfactant and the amine amphoteric surfactant of sulfonate surfactant, wherein said fluoride comprises ammonium fluoride, in potassium fluoride and the sodium fluoride one or more.
2. the chemically polishing method of the liquid crystal glass base of claim 1 wherein, produces bubble from the chemical brightening solution storage tank bottom that stores above-mentioned chemical brightening solution, thereby produces rising liquid stream.
3. the chemically polishing method of the liquid crystal glass base of claim 2 wherein, makes above-mentioned rising liquid stream overflow from the circumference of above-mentioned chemical brightening solution storage tank.
4. the chemically polishing method of the liquid crystal glass base of claim 3 wherein, makes the above-mentioned chemical brightening solution that overflows from circumference supply with above-mentioned chemical brightening solution storage tank once more.
5. the chemically polishing method of the liquid crystal glass base of claim 4 wherein, makes the above-mentioned chemical brightening solution that overflows from the circumference filtrator of flowing through, remove the resultant of reaction that produces in the polishing process after, supply with above-mentioned chemical brightening solution storage tank.
6. chemical polishing device comprises the chemical brightening solution storage tank and the following apparatus that store chemical brightening solution:
The bubble generator that imports gas and gas is spued and partly spues from bubble, described bubble spue and partly are made of porous materials;
Be arranged at the spillage dump tank of above-mentioned chemical brightening solution storage tank circumference, this groove is used to accept the chemical brightening solution that overflows from described storage tank;
Be used to remove the filtrator that polishes the reaction production thing that produces;
Chemical brightening solution after the above-mentioned filtrator filtration is transported to once more the pump of chemical brightening solution storage tank;
Be configured in the chemical brightening solution blowoff of above-mentioned bubble generator downside, this device has a plurality of holes, is used for the chemical brightening solution with said pump output is sprayed to the bottom of chemical brightening solution storage tank.
7. the chemical polishing device of claim 6, wherein, have the utensil of placing liquid crystal glass base, this utensil is used to place one or polylith liquid crystal glass base, described liquid crystal glass base can be a monolithic, also can be after a pair of liquid crystal glass base is fitted.
8. the chemical polishing device of claim 6 or claim 7 wherein, is equipped with ultrasonic vibrator or shakes stirrer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001114498 | 2001-04-12 | ||
| JP114498/2001 | 2001-04-12 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100833270A Division CN100462319C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and glass base plate with the method and chemical polishing device |
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| CN1380572A true CN1380572A (en) | 2002-11-20 |
| CN1277142C CN1277142C (en) | 2006-09-27 |
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| CNB2005100833270A Expired - Fee Related CN100462319C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and glass base plate with the method and chemical polishing device |
| CNB021059632A Expired - Fee Related CN1277142C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and device for liquid crystal glass base plate |
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| CNB2005100833270A Expired - Fee Related CN100462319C (en) | 2001-04-12 | 2002-04-11 | Chemical polishing method and glass base plate with the method and chemical polishing device |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100380844B1 (en) |
| CN (2) | CN100462319C (en) |
| SG (1) | SG94843A1 (en) |
| TW (1) | TWI263079B (en) |
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- 2001-04-30 KR KR10-2001-0023329A patent/KR100380844B1/en not_active IP Right Cessation
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- 2001-06-05 SG SG200103698A patent/SG94843A1/en unknown
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- 2002-04-11 CN CNB2005100833270A patent/CN100462319C/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| CN1724432A (en) | 2006-01-25 |
| CN1277142C (en) | 2006-09-27 |
| TWI263079B (en) | 2006-10-01 |
| KR100380844B1 (en) | 2003-04-18 |
| CN100462319C (en) | 2009-02-18 |
| KR20020080215A (en) | 2002-10-23 |
| SG94843A1 (en) | 2003-03-18 |
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