CN1367557A - Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array - Google Patents
Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array Download PDFInfo
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- CN1367557A CN1367557A CN 02109136 CN02109136A CN1367557A CN 1367557 A CN1367557 A CN 1367557A CN 02109136 CN02109136 CN 02109136 CN 02109136 A CN02109136 A CN 02109136A CN 1367557 A CN1367557 A CN 1367557A
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- micropassage
- diode laser
- cooling fluid
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- heat sink
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Abstract
The present invention belongs to an improvement for preparing method of cooling laser diode array at sealed package multple-chip micropassage heat sink in semiconductor photoelectronic technical field. The micropassage will be prepared on the same sheet of heat conductor in buckling weld diode laser array strip and the micropassage is very near to the position of buckling weld at diode laser array strip so as to let the heat built-up by diode laser array strip go into micropassage quickly. The cooling liquid coming in the micropassage will contact with micropassage sufliciently so that the heat will be brought away by cooling liquid flowing through the micropassage via forced heat conduction in order to let the micropassage heat sink work at the subheat volume saturated state. The present invention can realize the high desity package of diode laser array to raise its performance-price retio of providing a cooling laser diode array preparation is sealed package single-chip micropassage heat sink with stable performance, easy radiation and low heat resistance to be used for high power semicondcutor laser array.
Description
Technical field: the invention belongs to field of semiconductor photoelectron technique, relate to a kind of improvement to sealing dress multiple-piece micro-channel heat sink cooling laser diode array and preparation method.
Background technology: Superpower semiconductor laser array is with its wide application prospect and enormous and latent market and become the focus that competitively chase various countries, the subject matter that present Superpower semiconductor laser array is faced is its low ratio of performance to price, the performance that is laser low (power, efficient, reliability and stability, consistency etc.), and the cost of manufacture of laser (being price) is very high, and this has limited its practical application to a great extent.The performance of laser is except that relevant with epitaxial material, also relevant with the heat dissipation of laser, because factors such as conversion efficiency, luminescent device integrated causes hot enrichment, therefore and the stability of Superpower semiconductor laser array device performance and reliability and junction temperature have direct relation, will obtain high stability, high reliability, high-power semiconductor laser array and just must design and produce the heat sink of high heat conductance.
The objective of the invention is to solve passive heat sink, and be only applicable to low-power laser because of its thermal capacitance quantitative limitation; Active large passage, its thermal resistance of small channel heat sink are also higher relatively, are applicable to the mid power laser; Though and the sandwich construction micro-channel heat sink thermal resistance by Diffusion Welding is low, is applicable to the high power laser array, its complicated process of preparation, the cost of manufacture height is unfavorable for the problems such as extensive use of superpower laser array.With the sealing dress high-efficiency single-chip that a kind of low thermal resistance the is provided passage heat sink cooling laser diode array manufacturing technology that declines.
Summary of the invention: to achieve these goals, preparation method's step of the present invention is:
A, with the heat conductor surface finish, clean up and prepare penetrating microchannel and fixing hole;
B, with step a polished surface and cleaning up again, the tow sides and the corresponding side in button weldering diode laser matrix bar district plate multilayer conductive metallic film and metallization respectively on the heat conductor body then, again its front or reverse side are plated scolder;
C, choose insulating material and polish tow sides, logical cooling fluid hole of preparation and fixing hole respectively after cleaning up make the area in logical cooling fluid hole be slightly larger than the shared area in microchannel, choose the thickness of insulating material and the consistency of thickness of diode laser matrix bar;
D, choose the insulation elastoplast and clean up and to prepare its size of open-work consistent with the microchannel, the size of insulation elastoplast is consistent with logical cooling fluid hole, and the elastoplast that insulate is slightly thicker than insulating material;
E, choose solid material and clean up and prepare not saturating groove, fixing hole, cooling fluid thereon into and out of the hole, groove is communicated with into and out of the hole with cooling fluid, and the bottom area of groove is consistent with the microchannel area occupied;
F, diode laser matrix bar back-off is welded in the button weldering diode laser matrix bar district earlier, the elastoplast that will insulate is again put into and is led to the cooling fluid hole, then Fig. 1,2,3 relevant position is fixed together, and forms a diode laser matrix unit;
G, also can utilize two-sided sintering technology, the n face of diode laser matrix bar and p face are freezed respectively in the positions in two button weldering diode laser matrix bar districts of two heat conductors; The elastoplast that will insulate is simultaneously put into logical cooling fluid hole, and they are fixed on two relevant positions between the heat conductor, forms the diode laser matrix unit of sandwiched type structure;
H, the unit of a plurality of f or this spline structure of g is come into line in the same way and add the cooling fluid guide plate respectively at its two ends, tighten fixing by fixing hole with fixed lever, realize good water-stop and electrically contact, burn-on at last positive electrode and negative electrode, form the complete sealing dress high-efficiency single-chip passage heat sink cooling laser diode array that declines, as shown in Figure 5.
The present invention has designed a kind of brand-new sealing dress high-efficiency single-chip passage heat sink cooling laser diode array that declines.Compare with sandwich construction micro-channel heat sink cooling laser diode array, single-chip microchannel heat sink cooling laser diode array preparation technology is simple and practical, cost of manufacture is low, good heat conduction effect, optical output power density is big, can realize the high-density packages of diode laser array, improve its ratio of performance to price.
It has made full use of the design principle of micro-channel heat sink, the microchannel is directly designed on same a slice heat conductor that the diode laser array bar is installed, because the microchannel of design is very near from the distance of diode laser array bar institute installation site, utilize the high thermal conductance of heat conductor, the heat that the diode laser array bar produces very F.F. is gone in the blade of microchannel, cooling fluid is advanced by cooling fluid, portal and enter the microchannel, make cooling fluid fully contact with the blade of microchannel, heat is taken away by being forced to the flowed through cooling fluid of microchannel of heat conducting mode, thereby make micro-channel heat sink be operated in inferior thermal capacity saturation condition, improve the stability and the reliability of laser.Utilize single-chip microchannel heat sink not only to save the preparation technology of multilayer micro-channel heat sink complexity and the cost of manufacture of great number in addition, and reduced the spacing between the laser array bar, improved the Output optical power density of laser.The present invention is for Superpower semiconductor laser array provides stable and reliable for performance, is easy to dispel the heat, the system of the seal-packaged single-chip microchannel heat sink cooling laser diode array of low thermal resistance.
Description of drawings:
Fig. 1 is a kind of embodiment floor map of monolithic micro-channel heat sink of the present invention
Fig. 2 is a kind of embodiment schematic diagram of insulating material of the present invention
Fig. 3 is insulate a kind of embodiment schematic diagram of elastoplast of the present invention
Fig. 4 is a kind of embodiment schematic diagram of cooling fluid guide plate of the present invention
Fig. 5 is the structural representation of an embodiment of the present invention
Embodiment: describe the present invention in detail below in conjunction with the drawings and specific embodiments:
The present invention includes: button weldering diode laser matrix bar district (1), penetrating microchannel (2) and fixing hole (3), heat conductor (4), insulator (5), logical cooling fluid hole (6), insulate elastoplast (7), open-work (8), groove (9), solid material (10), cooling fluid is (11), diode laser matrix bar (12), positive electrode (13), fixed lever (14), negative electrode (15) into and out of the hole.
1), preparation heat conductor (4): heat conductor (4) can be selected oxygen-free copper, the sheet oxygen-free copper that 1mm is thick cuts into the rectangular sheet of 18mm * 18mm, cut 3.5mm * 1mm respectively at any two angles again, form the outstanding part button weldering diode laser matrix bar district (1) of front end and be used to install the diode laser matrix bar, after polished and cleaned is clean, utilize the method for chemical corrosion to erode away penetrating microchannel 2 and fixing fixing hole (3), the cycle of microchannel 2 is 1mm, wide 0.5mm, long 4mm, outer peripheral distance is 3mm from button weldering diode laser matrix bar district (1), the distance of 2 both sides of the edge is 4mm from the microchannel, the edge of microchannel 2 is 5mm far from the centre distance of fixing hole 3, the diameter of fixing hole 3 is 3mm, and its center is 12mm from the outer peripheral distance in button weldering diode laser matrix bar district (1), distance from both sides of the edge is respectively 9mm.Polished surface and cleaning up again after corrosion is good, plate 50nm titanium, 50nm nickel, 100nm gold from inside to outside respectively in positive and negative two faces and a side in button weldering diode laser matrix bar district (1) again, and then in the front or reverse side plate the indium of 1-2 μ m, after processing, heat conductor (4) cleans up, as shown in Figure 1.
2) preparation insulator (5): insulator (5) can be selected carborundum and select volume is 17 * 18 * 0.1mm
3, polished surface and clean up after be processed into as shown in Figure 2 shape: 6 penetrating * 14mm can be selected in logical cooling fluid hole (6)
2Rectangle frame, logical cooling fluid hole (6) upper sid strip fabric width can be selected 1mm, the both sides hem width can be selected 2mm and 2mm respectively, the lower limb in logical cooling fluid hole (6) and the centre distance of fixing hole (3) can be selected 4mm; 9mm can be selected far from both sides of the edge in the center of fixing hole (3), cleans up after insulator (5) processes, as shown in Figure 2.
3) preparation insulation elastomeric material (7): insulation elastomeric material (7) can be selected silicone rubber, and its volume can be selected 6 * 14 * 0.11mm
3, preparing open-work (8) at the center of insulation elastomeric material (7), open-work (8) can be selected 4 * 10mm
2Rectangle frame cleans up after insulation elastomeric material (7) processes, as shown in Figure 3.
4) preparation solid material (10): solid material (10) can be selected oxygen-free copper, and its volume can be selected 17 * 18 * 6mm
3, be processed into shape as shown in Figure 4: groove (9) can be selected rectangular channel, and volume can be selected 4 * 10 * 4mm
3, the width of groove (9) top cavity can be selected 2mm, the wide 4mm that selects of cavity of groove (9) both sides.5mm can be selected from the lower limb of groove (9) in the center of fixing hole (3).Cooling fluid into and out of the hole diameter of (11) can select 3mm, its center can be selected 3mm respectively from the distance of the upper and lower surface of solid material (10), the distance of a side can be selected 5.5mm from nearby, cooling fluid into and out of the hole (11) length can select 12mm, after processing, solid material (10) cleans up, as shown in Figure 4.
5) diode laser matrix bar (12) back-off is welded in the button weldering diode laser matrix bar district (1) earlier, the elastoplast (7) that will insulate is again put into logical cooling fluid hole (6), then Fig. 1,2,3 relevant position are fixed together, form a diode laser matrix unit;
6) also can utilize two-sided sintering technology, the n face of diode laser matrix bar (12) and p face are freezed respectively in the positions in two button weldering diode laser matrix bar districts (1) of two heat conductors (4); The elastoplast (7) that will insulate is simultaneously put into logical cooling fluid hole (6), and they are fixed on relevant position between two heat conductors (4), forms the diode laser matrix unit of sandwiched type structure;
7) with a plurality of 5) or 6) unit of this spline structure comes into line and add respectively at its two ends cooling fluid guide plate (10) in the same way, tighten fixing with fixed lever (14) by fixing hole (3), realize good water-stop and electrically contact, burn-on at last positive electrode (13) and negative electrode (15), form the complete sealing dress high-efficiency single-chip passage heat sink cooling laser diode array that declines, as shown in Figure 5.
The foregoing description only is a kind of embodiment of the present invention, and other embodiment can select according to actual needs.
Claims (1)
1, the preparation of seal-packaged single-chip microchannel heat sink cooling laser diode array is characterized in that preparation process is:
A, with the heat conductor surface finish and clean up and prepare penetrating microchannel and fixing hole;
B, with step a polished surface and cleaning up again, the tow sides and the corresponding side in button weldering diode laser matrix bar district plate multilayer conductive metallic film and metallization respectively on the heat conductor body then, again its front or reverse side are plated scolder;
C, choose insulating material and polish tow sides, logical cooling fluid hole of preparation and fixing hole respectively after cleaning up make the area in logical cooling fluid hole be slightly larger than the shared area in microchannel, choose the thickness of insulating material and the consistency of thickness of diode laser matrix bar;
D, choose the insulation elastoplast and clean up and to prepare its size of open-work consistent with the microchannel, the size of insulation elastoplast is consistent with logical cooling fluid hole, and the elastoplast that insulate is slightly thicker than insulating material;
E, choose solid material and clean up and prepare not saturating groove, fixing hole, cooling fluid thereon into and out of the hole, groove is communicated with into and out of the hole with cooling fluid, and the bottom area of groove is consistent with the microchannel area occupied;
F, diode laser matrix bar back-off is welded in the button weldering diode laser matrix bar district earlier, the elastoplast that will insulate is again put into and is led to the cooling fluid hole, then Fig. 1,2,3 relevant position is fixed together, and forms a diode laser matrix unit;
G, also can utilize two-sided sintering technology, the n face of diode laser matrix bar and p face are freezed respectively in the positions in two button weldering diode laser matrix bar districts of two heat conductors; The elastoplast that will insulate is simultaneously put into logical cooling fluid hole, and they are fixed on two relevant positions between the heat conductor, forms the diode laser matrix unit of sandwiched type structure;
H, the unit of a plurality of f or this spline structure of g is come into line in the same way and add the cooling fluid guide plate respectively at its two ends, tighten fixing by fixing hole with fixed lever, realize good water-stop and electrically contact, burn-on at last positive electrode and negative electrode are made the complete sealing dress high-efficiency single-chip passage heat sink cooling laser diode array that declines.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 02109136 CN1367557A (en) | 2002-02-01 | 2002-02-01 | Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array |
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| CN 02109136 CN1367557A (en) | 2002-02-01 | 2002-02-01 | Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300902C (en) * | 2005-01-28 | 2007-02-14 | 中国科学院长春光学精密机械与物理研究所 | Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar |
| CN100416953C (en) * | 2003-12-16 | 2008-09-03 | 浜松光子学株式会社 | Semiconductor laser device and method of producing the same |
| CN102097743A (en) * | 2010-12-10 | 2011-06-15 | 长春理工大学 | Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser |
| CN104810722A (en) * | 2015-05-26 | 2015-07-29 | 北京弘光浩宇科技有限公司 | Monolithic macro-channel heat sink for semiconductor laser and semiconductor laser |
| WO2016019615A1 (en) * | 2014-08-07 | 2016-02-11 | 西安精英光电技术有限公司 | Split type semiconductor laser diode energy beam combiner |
| CN115360568A (en) * | 2022-08-25 | 2022-11-18 | 湖北华中长江光电科技有限公司 | Heat transfer device, laser module, laser array system and design method |
| CN116231443A (en) * | 2023-05-08 | 2023-06-06 | 北京凯普林光电科技股份有限公司 | Area array semiconductor laser |
-
2002
- 2002-02-01 CN CN 02109136 patent/CN1367557A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100416953C (en) * | 2003-12-16 | 2008-09-03 | 浜松光子学株式会社 | Semiconductor laser device and method of producing the same |
| CN1300902C (en) * | 2005-01-28 | 2007-02-14 | 中国科学院长春光学精密机械与物理研究所 | Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar |
| CN102097743A (en) * | 2010-12-10 | 2011-06-15 | 长春理工大学 | Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser |
| CN102097743B (en) * | 2010-12-10 | 2012-05-02 | 长春理工大学 | Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser |
| WO2016019615A1 (en) * | 2014-08-07 | 2016-02-11 | 西安精英光电技术有限公司 | Split type semiconductor laser diode energy beam combiner |
| CN104810722A (en) * | 2015-05-26 | 2015-07-29 | 北京弘光浩宇科技有限公司 | Monolithic macro-channel heat sink for semiconductor laser and semiconductor laser |
| CN104810722B (en) * | 2015-05-26 | 2018-10-12 | 北京弘光浩宇科技有限公司 | The macro channel of semiconductor laser one chip is heat sink and semiconductor laser |
| CN115360568A (en) * | 2022-08-25 | 2022-11-18 | 湖北华中长江光电科技有限公司 | Heat transfer device, laser module, laser array system and design method |
| CN115360568B (en) * | 2022-08-25 | 2023-06-20 | 湖北华中长江光电科技有限公司 | Heat transfer device, laser module, laser array system and design method |
| CN116231443A (en) * | 2023-05-08 | 2023-06-06 | 北京凯普林光电科技股份有限公司 | Area array semiconductor laser |
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