CN1300902C - Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar - Google Patents
Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar Download PDFInfo
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- CN1300902C CN1300902C CNB2005100165518A CN200510016551A CN1300902C CN 1300902 C CN1300902 C CN 1300902C CN B2005100165518 A CNB2005100165518 A CN B2005100165518A CN 200510016551 A CN200510016551 A CN 200510016551A CN 1300902 C CN1300902 C CN 1300902C
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Abstract
The present invention relates to a double-surface sintering method and a device for a semiconductor laser linear array and a stack array. The method needs to be carried out in a sealing box. Hydrogen and nitrogen charging mixed gas in a middle sealing box is heated and cooled under the protection of hydrogen gas and nitrogen gas; a first block of heat sink, a second block of heat sink and N Bars are sucked to a sliding heater of heat sinks by a suction needle so as to be fixed; the heating of the first block of heat sink and the second block of heat sink is stopped after the first block of heat sink and the second block of heat sink are heated to be 150 DEG C to 200 DEG C; then, the first block of heat sink and the second block of heat sink are cooled so as to complete the sintering of the N Bars. The device comprises a movable shelf 1, a bottom seat 2, a longitudinal adjusting knob 3, guide rails 4, a microscope bottom seat 5, a fixing knob 6, a microscope shelf 7, an inlet 8 of hydrogen gas and nitrogen gas, a microscope lift adjusting knob 9, a sealing box 10, a microscope 11, a vacuum suction needle 12, a Bar sintering device 13 and an outlet 14 of hydrogen gas and nitrogen gas. The present invention adopts double-surface sintering and belongs to a surface contact type. The sintering of a plurality of Bars, an upper electrode and a lower electrode can be completed once, the sintering quality, the finished product rate and the productivity effect of the Bars are increased, and the thermal resistance of the Bars is effectively reduced. The present invention has the advantages of simple and practical technology, low manufacture cost and high productivity effect.
Description
Technical field:
The invention belongs to the Semiconductor Optic Electronics technical field, relate to semiconductor laser linear array and the assembling of Bar bar and the two-sided sintering method of the battle array that changes.
Background technology:
The high-power semiconductor laser linear array, repeatedly battle array becomes the focus that competitively chase various countries with its wide application prospect and enormous and latent market, the high-power semiconductor laser linear array and gust subject matter that is faced that changes are its low ratios of performance to price at present, be laser linear array, the performance low (power, efficient, reliability and stability, consistency etc.) of battle array repeatedly, and cost of manufacture (being price) is very high, and this has limited its practical application to a great extent.Laser linear array and repeatedly the performance of battle array remove with epitaxial material is relevant, also relevant with laser linear array and the packaging technology that changes gust, as technologies such as the assembling of Bar bar and sintering.
The sintering of present domestic semiconductor laser linear array, the battle array that changes Bar bar generally adopts manual mode of operation or mechanical type single face sintering process.Manual operations promptly manually picks up the Bar bar with tweezers, aims at laser thermal sediment at microscopically, or is put into heat sink suitable position, heat-agglomerating again after picking up the Bar bar with the gas tweezers.The shortcoming that manual operations exists is that to put error big, causes decrease in yield; In sintering process, when scolder melted, because surface tension is bigger, and the Bar bar was very light, can not with heat sink even contact, make laser linear array, repeatedly stability, reliability and the life-span of battle array are all had a strong impact on.Mechanical type single face sintering process adopts machinery and gas to suck up mobile Bar bar, though overcome manual shortcoming, can only finish the welding of bottom electrode; The sintering of top electrode is to adopt gold ball bonding, belong to a contact sintering, this sintering processing can make the thermal resistance of device become big, and some contact sintering processing causes damage to Bar bar active layer easily, need to tie excessive electrode, excessive lead-in wire etc. in addition to reburning on each Bar bar, greatly reduce productivity ratio, improved the submodule cost.Therefore to obtain high stability, high reliability, high-power semiconductor laser linear array and repeatedly battle array just must design and produce sintering processing efficiently.
Detailed content of the present invention:
Because the Bar bar sintering technology of laser array, the battle array that changes is undesirable in the background technology, the welding thermal resistance is big, the life-span is short, production efficiency is low, in order to address the above problem, the object of the present invention is to provide a kind of semiconductor laser linear array and change the two-sided sintering method of battle array Bar bar, adopt the sintering that this method can the disposable Bar of finishing bar upper/lower electrode, and can once sintered a plurality of laser Bar bars, improve Bar bar sintering quality, rate of finished products and production efficiency.For this reason, the present invention will disclose a kind of effective Bar bar sintering method, be provided for the high-power semiconductor laser linear array and the sintering method and the device of the battle array that changes.
To achieve these goals, the two-sided sintering method of the semiconductor laser linear array of the present invention and the battle array Bar bar that changes need carry out in stuffing box, will fill hydrogen nitrogen mixed gas in the stuffing box in heating and temperature-fall period, carries out under the hydrogen and nitrogen gas protection; Its characteristics may further comprise the steps:
1) with first suction spindle with on first heat sink end that is drawn onto heat sink slip heater, first suction spindle leave first heat sink;
2) respectively N Bar bar is drawn onto on the heat sink slip heater with second suction spindle, the bottom of each Bar bar is contacted with heat sink slip heater upper surface, and make the side of first Bar bar heat sink near first in the step 1), second suction spindle leaves the Bar bar;
3) with first suction spindle with second heat sink being drawn onto on the heat sink slip heater, and the side that makes N Bar bar is heat sink near second, first suction spindle leave second heat sink;
4) with Bar bar sintering equipment with step 1), 2), 3) in first heat sink, second heat sink and Bar bar fix;
5) to first heat sink, second heat sinkly stop heating after being heated to 150 ℃-200 ℃, make first heat sink, second heat sink temperature drop to 70 ℃-10 ℃, promptly finish the sintering of N Bar bar.
Semiconductor laser linear array, the device that the two-sided sintering method of Bar bar of the battle array that changes is adopted is a kind of semiconductor laser linear array and the battle array Bar bar bonding machine that changes, comprise: adjustable shelf, base, vertical adjusting knob, guide rail, Microscope base, fixing button, microscope stand, nitrogen inlet, microscope lift adjustment button, stuffing box, microscope, the vacuum suction spindle, Bar bar sintering equipment, nitrogen outlet, fixedly connected with the top of Microscope base in the bottom surface of adjustable shelf, adjustable shelf, base, vertical adjusting knob, guide rail, Microscope base, fixing button, microscope stand, microscope lift adjustment button, microscope is positioned at the stuffing box outside, Microscope base is fixedlyed connected with base with the lateral surface of stuffing box, microscope is connected on the microscope stand, microscope lift adjustment button is fixedlyed connected with microscope stand, the side of adjustable shelf is provided with the fixing button of adjusting the microscope stand pendulum angle, the pore size distribution of the hole of hydrogen and nitrogen gas inlet and hydrogen and nitrogen gas outlet is on stuffing box, the internal fixation of stuffing box has the vacuum suction spindle, it is fixedly connected that Bar bar sintering equipment is positioned at stuffing box and both, vertically adjusting knob is fixed on the adjustable shelf, and guide rail is positioned at Microscope base and contacts with the following of adjustable shelf.
Semiconductor laser linear array of the present invention, the battle array that changes a bar bar sintering are realized by the bonding machine; at first with Bar bar and the heat sink pipe fitting place that is placed into Bar bar sintering equipment; finish Bar bar and heat sink placement by the vacuum suction spindle; monitor Bar bar and heat sink accurate location by high-power microscope; by heat sink slip heater to Bar bar and heat sink the heating; by scolder heat sink and Bar bar are welded together; cooling then; promptly finish the sintering process of Bar bar, will lead to protective gas in the operation is hydrogen nitrogen mixed gas.
Advantage of the present invention:
Because the present invention adopts the heat sink technical scheme that contacts with the slide plate upper surface with Bar bar bottom, guarantee that heat sink and Bar bar is heated simultaneously, because the present invention adopts the face contact type sintering processing, finish the two-sided sintering of a plurality of Bar bars and upper/lower electrode thereof, improve Bar bar sintering quality, rate of finished products and production efficiency.Thereby solved in the background technology the heat sink and Bar bar of manual operations, it is big to make it put error, causes the decrease in yield problem; Mechanical type single face sintering process can only be finished the welding of bottom electrode, and the sintering of top electrode adopts the some contact, and the thermal resistance that makes semiconductor laser linear array reach repeatedly battle array becomes big, and owing to the influence of pressure causes damage to the Bar bar easily; Because each Bar bar is to be connected in parallel by more than ten single tubes, need draw tens spun gold lead-in wires to each Bar bar top electrode welds, the invention solves the low problem of production efficiency, reduce the semiconductor linear array and repeatedly battle array damage and can improve the semiconductor linear array and life-span of battle array repeatedly, two-sided sintering processing can effectively reduce the semiconductor linear array and the thermal resistance of battle array repeatedly.
Because heat sink and Bar bar of the present invention on same plane, solve in the sintering process, the Bar bar can not with heat sink even contact, bring laser linear array, the problem that all had a strong impact on of stability, reliability and the life-span of battle array repeatedly.
The characteristics that technology of the present invention has is simple and practical, cost of manufacture is low, production efficiency is high, be applicable to high-power semiconductor laser linear array, the repeatedly making of battle array.
Description of drawings:
Fig. 1 is apparatus of the present invention perspective view
Fig. 2 is a Bar bar sintering equipment front view of the present invention
Embodiment: the present invention is further described below in conjunction with drawings and Examples, but the invention is not restricted to these embodiment.
Embodiment 1:
The present invention is as shown in Figure 1: adjustable shelf 1, base 2, vertically adjusting knob 3, guide rail 4, Microscope base 5, fixing button 6, microscope stand 7, hydrogen and nitrogen gas inlet 8, microscope lift adjustment button 9, stuffing box 10, microscope 11, vacuum suction spindle 12, Bar bar sintering equipment 13, hydrogen and nitrogen gas outlet 14.
Adjustable shelf 1, vertical adjusting knob 3, guide rail 4, Microscope base 5, fixing button 6, microscope stand 7, microscope lift adjustment button 9, microscope 11 all can be made as cast iron and or copper and or oxygen-free copper by metal material.
Base 2 can be made by heat-insulating material.Hydrogen and nitrogen gas inlet 8 and outlet 14 are arranged on the body of stuffing box 10, and stuffing box 10 is made by stainless steel.Vacuum suction spindle 12 is made by silica gel.
Fixedly Bar bar sintering equipment 13 by aluminium and or stainless steel and or copper and or molybdenum and or tungsten and or manganese steel and or poly-tetrafluoro hexene material make.
As shown in Figure 2: Bar bar sintering equipment 13 comprises: heat sink slip heater 15, spring 16, slideway 17, slide plate 18, jackscrew frame 19, jackscrew 20, pipe fitting 21, compressing tablet 22, backing plate 23, baffle plate 24, the top of following and slide plate 18 of heat sink slip heater 15 fixedlyed connected, spring 16 is fixedlyed connected with slide plate 18, the top of following and slideway 17 of slide plate 18 fixedlyed connected, jackscrew 20 be fixed on the jackscrew frame 19 and with the contacts side surfaces of slide plate 18, pipe fitting 21 is positioned at the top of heat sink slip heater 15 and contacts with the side of compressing tablet 22, compressing tablet 22 be positioned at first heat sink, second heat sink outside, be fixed on below the compressing tablet 22 on the backing plate 23, the side of baffle plate 24 is connected with the side of spring 16 with slideway 17.First heat sink, second heat sink and Bar bar is fixing by compressing tablet 22.
Heat sink slip heater 15 by molybdenum and or the tungsten material make.Spring 16 is made by manganese steel.Slideway 17, slide plate 18, jackscrew frame 19, jackscrew 20 by aluminium with or stainless steel with or copper become.Pipe fitting 21 comprises: first heat sink, second heat sink and N Bar bar.Compressing tablet 22 by aluminium with or copper become.Backing plate 23 is made by poly-tetrafluoro hexene.Baffle plate 24 by aluminium and or stainless steel material make.
Stop heating after temperature heat sink to first, second heat sink heating can be selected 150 ℃ or 160 ℃ or 170 ℃ or 180 ℃ or 200 ℃, make first heat sink, second heat sink temperature drop to 70 ℃ or 50 ℃ or 30 ℃ or 20 ℃ or 10 ℃.
First suction spindle is that diameter is 300 or 400 or 500 or 600 microns syringe needle or other form, second suction spindle be diameter be 100 200 or 300 or the micron syringe needle or other form, first with N Bar bar respectively with first heat sink and second heat sink contact, connect by scolder between remaining Bar bar.
Embodiment 2: the present invention can be applicable in the semiconductor light-emitting-diode array, changes N Bar bar in the pipe fitting among the embodiment 1 21 into the semiconductor light-emitting-diode array and gets final product.
Embodiment 3: the present invention can be applicable in the photodetector array, changes N Bar bar in the pipe fitting among the embodiment 1 21 into the photoelectric detector array and gets final product.
Claims (2)
1, the two-sided sintering method of semiconductor laser linear array and iterative array bar need carry out in stuffing box, will fill hydrogen nitrogen mixed gas in the stuffing box in heating and temperature-fall period, carries out under the hydrogen and nitrogen gas protection; It is characterized in that may further comprise the steps:
1) with first suction spindle with on first heat sink end that is drawn onto heat sink slip heater, first suction spindle leave first heat sink;
2) respectively N Bar bar is drawn onto on the heat sink slip heater with second suction spindle, the bottom of each Bar bar is contacted with heat sink slip heater upper surface, and make the side of first Bar bar heat sink near first in the step 1), second suction spindle leaves the Bar bar;
3) with first suction spindle with second heat sink being drawn onto on the heat sink slip heater, and the side that makes N Bar bar is heat sink near second, first suction spindle leave second heat sink;
4) with the compressing tablet (22) in the Bar bar sintering equipment with step 1), 2), 3) in first heat sink, second heat sink and Bar bar fix, be located at the top of heat sink slip heater (15); Top the fixedlying connected of the following and slide plate (18) of the heat sink slip heater (15) in the used Bar bar sintering equipment, spring (16) is fixedlyed connected with slide plate (18), top the fixedlying connected of the following and slideway (17) of slide plate (18), jackscrew (20) be fixed on that jackscrew frame (19) is gone up and with the contacts side surfaces of slide plate (18), pipe fitting (21) is positioned at the top of heat sink slip heater (15) and contacts with the side of compressing tablet (22), wherein pipe fitting (21) comprising: first heat sink, second heat sink and N Bar bar, be fixed on below the compressing tablet (22) on the backing plate (23), the side of baffle plate (24) is connected with the side of spring (16) with slideway (17).
5) heat sink slip heater stops heating to after 150 ℃-200 ℃ of first heat sink, second heat sink heating, makes first heat sink, second heat sink temperature drop to 70 ℃-10 ℃, promptly finishes the sintering of N Bar bar.
2, the two-sided sintering equipment of semiconductor laser linear array and iterative array bar, comprise: Microscope base (5), microscope stand (7), microscope lift adjustment button (9), microscope (11), vacuum suction spindle (12), microscope (11) is connected on the microscope stand (7), microscope lift adjustment button (9) is fixedlyed connected with microscope stand (7), it is characterized in that also comprising: adjustable shelf (1), base (2), vertical adjusting knob (3), guide rail (4), fixing button (6), nitrogen inlet (8), stuffing box (10), Bar bar sintering equipment (13), nitrogen outlet (14), top the fixedlying connected of the bottom surface of adjustable shelf (1) and Microscope base (5), adjustable shelf (1), base (2), vertical adjusting knob (3), guide rail (4), Microscope base (5), fixing button (6), microscope stand (7), microscope lift adjustment button (9), microscope (11) is positioned at stuffing box (10) outside, Microscope base (5) is fixedlyed connected with base (2) with the lateral surface of stuffing box (10), the side of adjustable shelf (1) is provided with the fixing button (6) of adjusting microscope stand (7) pendulum angle, the pore size distribution of the hole of hydrogen and nitrogen gas inlet (8) and hydrogen and nitrogen gas outlet (14) is on stuffing box (10), the internal fixation of stuffing box (10) has vacuum suction spindle (12), it is fixedly connected that Bar bar sintering equipment (13) is positioned at stuffing box (10) and both, vertically adjusting knob (3) is fixed on the adjustable shelf (1), guide rail (4) be positioned at Microscope base (5) and with following contact of adjustable shelf (1); Bar bar sintering equipment (13) comprising: heat sink slip heater (15), spring (16), slideway (17), slide plate (18), jackscrew frame (19), jackscrew (20), pipe fitting (21), compressing tablet (22), backing plate (23), baffle plate (24), top the fixedlying connected of the following and slide plate (18) of heat sink slip heater (15), spring (16) is fixedlyed connected with slide plate (18), top the fixedlying connected of the following and slideway (17) of slide plate (18), jackscrew (20) be fixed on that jackscrew frame (19) is gone up and with the contacts side surfaces of slide plate (18), pipe fitting (21) is positioned at the top of heat sink slip heater (15) and contacts with the side of compressing tablet (22), be fixed on below the compressing tablet (22) on the backing plate (23), the side of baffle plate (24) is connected with the side of spring (16) with slideway (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100165518A CN1300902C (en) | 2005-01-28 | 2005-01-28 | Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100165518A CN1300902C (en) | 2005-01-28 | 2005-01-28 | Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1671018A CN1671018A (en) | 2005-09-21 |
| CN1300902C true CN1300902C (en) | 2007-02-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100165518A Expired - Fee Related CN1300902C (en) | 2005-01-28 | 2005-01-28 | Method and apparatus for double-faced sintering of semiconductor laser linear array and iterative array bar |
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| CN (1) | CN1300902C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515702B (en) * | 2009-04-07 | 2010-10-27 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser tube core sintering device and usage thereof |
| CN102179594A (en) * | 2011-05-18 | 2011-09-14 | 中国科学院长春光学精密机械与物理研究所 | Positioning device for electrode welding of semiconductor laser |
| CN104078834B (en) * | 2013-03-29 | 2018-01-02 | 山东华光光电子股份有限公司 | The method and its encapsulation sintering fixture of a kind of high power laser bar bar double-faced packaging |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5898211A (en) * | 1996-04-30 | 1999-04-27 | Cutting Edge Optronics, Inc. | Laser diode package with heat sink |
| CN1339856A (en) * | 2000-08-25 | 2002-03-13 | 深圳市众量激光器高技术有限公司 | Semiconductor laser and lower electrode sintering method for laser array die and its linkage machine |
| CN1367557A (en) * | 2002-02-01 | 2002-09-04 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array |
| CN1402393A (en) * | 2002-08-30 | 2003-03-12 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array assembling apparatus |
| US6636538B1 (en) * | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
-
2005
- 2005-01-28 CN CNB2005100165518A patent/CN1300902C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5898211A (en) * | 1996-04-30 | 1999-04-27 | Cutting Edge Optronics, Inc. | Laser diode package with heat sink |
| US6636538B1 (en) * | 1999-03-29 | 2003-10-21 | Cutting Edge Optronics, Inc. | Laser diode packaging |
| CN1339856A (en) * | 2000-08-25 | 2002-03-13 | 深圳市众量激光器高技术有限公司 | Semiconductor laser and lower electrode sintering method for laser array die and its linkage machine |
| CN1367557A (en) * | 2002-02-01 | 2002-09-04 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array |
| CN1402393A (en) * | 2002-08-30 | 2003-03-12 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser array assembling apparatus |
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| CN1671018A (en) | 2005-09-21 |
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