CN2759021Y - Diode laser array sandwich packaging structure - Google Patents
Diode laser array sandwich packaging structure Download PDFInfo
- Publication number
- CN2759021Y CN2759021Y CN 200420092969 CN200420092969U CN2759021Y CN 2759021 Y CN2759021 Y CN 2759021Y CN 200420092969 CN200420092969 CN 200420092969 CN 200420092969 U CN200420092969 U CN 200420092969U CN 2759021 Y CN2759021 Y CN 2759021Y
- Authority
- CN
- China
- Prior art keywords
- layer
- insn
- diamond
- chip
- scolder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 32
- 230000007704 transition Effects 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- 238000005538 encapsulation Methods 0.000 description 10
- 238000003466 welding Methods 0.000 description 9
- 230000035882 stress Effects 0.000 description 8
- 238000003754 machining Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910018885 Pt—Au Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a diode laser array sandwich packaging structure, which belongs to the technical field of packaging technique of diode laser array. A first layer is provided with a negative electrode (1), a second layer is provided with diamond (2), a third layer is a transition layer (5), the first layer and the second layer are welded together by InSn solder, and the second layer and the third layer are welded together by the InSn solder; a fourth layer is provided with a chip (6), and In solder is arranged between the third layer and the fourth layer; a fifth layer is a transition layer (5), and the fourth layer and the fifth layer are welded together by the In solder; a sixth layer is provided with CD diamond, a seventh layer is provided with a microchannel copper heat sink and a positive electrode (3), the fifth layer and the sixth layer are welded together by the InSn solder, and the six layer and the seventh layer are welded together by the InSn solder; an insulation layer (4) is positioned between the first layer and the seventh layer, the back face from the second layer to the sixth layer, the insulation layer and the first layer, the insulation layer and the seventh layer are evenly welded together by the InSn solder. The utility model achieves the low thermal resistance of elements, low ohmic contact and high cooling speed, and obviously reduces the smile effects of array.
Description
Technical field:
A kind of diode laser array sandwich encapsulating structure belongs to the encapsulation technology field of diode laser array.
Background technology:
The high-power diode laser array has purposes very widely in fields such as information processing, laser pumping, medical treatment, materials processing and national defence.At present, the existing series of products of semiconductor laser array (heap) of 5W-100W continuous (CW), 50W-6.0kW quasi-continuous (QCW) work.The application of high-power diode laser array can be divided into two important steps, the one, the making of diode chip for backlight unit, the 2nd, the encapsulation of diode laser array.The quality of encapsulation technology directly has influence on the overall performance and the useful life of device.
The encapsulation problem that at first will solve is to reduce the thermal resistance of chip and heatsink interface and the resistance of contact-making surface as far as possible, and is heat sink so that the waste thermal energy of chip conducts to effectively, and when avoiding the big current work of device Joule heat to the influence of chip performance.In order to make device have good thermal diffusivity, at present, the encapsulation major technology of diode laser array mainly contains two kinds:
One, adopt have high heat conductance and conductivity oxygen-free copper as heat sink, with chip directly be welded on copper heat sink on.Because the thermal coefficient of expansion K of copper
Cu=1.78 * 10-6mm/ ℃, with the thermal coefficient of expansion K of diode chip for backlight unit (GaAs)
GaAs=5.9 * 10-6mm/ ℃ differs greatly, and the thermal expansion stress that produces that do not match will cause layer concealed wire defective, increase interface resistance and resistance.In order to overcome diode chip for backlight unit (GaAs) and the inconsistent interfacial stress that causes of the heat sink thermal coefficient of expansion of copper, generally use at present to have low fusing point, effectively discharge the ability of stress, good plastic deformation and infiltrating slicken solder weld.
Two, adopt time encapsulating structure, earlier diode laser array is welded on slicken solder on inferior heat sink that thermal coefficient of expansions such as BeO, SiC, CuW alloy are complementary with it, and then be welded to Cu, on Si etc. are heat sink with the lower slicken solder of fusing point.
These two kinds of encapsulation technologies mainly are the resistance from thermal diffusivity that improves device and reduction contact-making surface, though use slicken solder can partly alleviate because the interfacial stress that thermal effect causes is fundamentally eliminated.Interfacial stress can cause diode chip for backlight unit slight curves, deformation, not point-blank " Smile " phenomenon of chip light emitting unit occurs, this can cause the far field light beam inhomogeneities and have a strong impact on useful life of laser.Fig. 1 is after adopting conventional encapsulating structure, diode laser array is near threshold current when luminous, the chip active region image that we photograph with the CCD camera, luminescence unit is of a size of 100um, duty ratio is 1: 1, the multiplication factor of CCD is 15, and it reflects that stress causes the distortion between the chip light emitting unit.
Summary of the invention:
The objective of the invention is to obtain the radiating efficiency height the little and encapsulation of eliminating or reduce the diode laser array of array " Smile " effect of contact resistance by adopting CD diamond interlayer encapsulating structure.
The invention provides a kind of diode laser array sandwich encapsulating structure, as shown in Figure 2, it is characterized in that it is made up of following each layer from top to bottom: ground floor is a negative electrode 1, the second layer is a CD diamond 2, weld together by the InSn scolder between the ground floor and the second layer, the 3rd layer of transition zone 5, also weld together between the second layer and the 3rd layer with the InSn scolder, the 4th layer is chip 6, be the In scolder between the 3rd layer and the 4th layer, layer 5 is a transition zone 5, weld together by the In scolder between the 4th layer and the layer 5, layer 6 is a CD diamond 2, and layer 5 and layer 6 weld together by the InSn scolder, and layer 7 is the heat sink and positive electrode 3 of microchannel copper, layer 6 and layer 7 weld together by the InSn scolder, insulating barrier 4 is between ground floor and layer 7, and second back to layer 6 all welds together by the InSn scolder between insulating barrier 4 and ground floor and the layer 7.
The used material of each layer of the present invention is described as follows: the ground floor negative electricity is copper product very, second layer CD diamond is a kind of composite diamond (Composite Diamond), and its Partial Feature parameter is as follows: thermal conductivity 500W/Mk, thermal coefficient of expansion 3.6ppm/K, density are 4g/cm
3The material of the 3rd layer of transition zone is Ti-Pt-Au-Pt-Au, the 4th layer of chip is GaAs, layer 5 is that transition zone still is Ti-Pt-Au-Pt-Au, layer 6 CD diamond is the same with the material of the second layer, layer 7 is the heat sink and positive electrode of microchannel copper, and the insulating barrier between ground floor and the layer 7 is the AlN material.
Packaging technology of the present invention is as follows:
At first on CD diamond 2, utilize the mode depositing Ti-Pt-Au-Pt-Au transition zone 5 of sputter coating; the a small amount of In scolder of hydatogenesis on the Au of transition zone layer then; respectively with the P face 10 of diode laser array chip 6 and N face 9 and the CD diamond 2 that has deposited transition zone under the protection of inert gas or vacuum condition welding or press together; welding temperature forms a kind of sandwich sandwich between 200 ℃-250 ℃.Because diode chip for backlight unit 6 active regions are luminous zone 8 and the about 2 μ m of chip P face 10 distances, and with N face 9 distance 120～150 μ m, minimum for heat sink and thermal resistances positive electrode 3 interfaces of diode chip for backlight unit 6 and microchannel copper are reduced to, adopt the fusing point InSn alloy lower to weld or the diamond of pressing is welded on the heat sink and positive electrode 3 of microchannel copper and better dispels the heat with chip P face 10 than In.The purpose that adopts the fusing point InSn lower than In is that the In scolder is not melted in order to weld for the second time, guarantees primary welding quality.Then on the heat sink and positive electrode 3 of microchannel copper with InSn scolder welding insulation layer 4, at last insulating barrier 4 and above the CD diamond 2 with the InSn negative electrode 1 of burn-oning.
The In scolder is reasonable solder at present, and good thermal conductivity, plastic deformation and thermal stress releasability are not only arranged, and with gold good wettability is arranged, and shortcoming is that its preparation condition and the environmental requirement in when welding is higher comparatively speaking.The thermal coefficient of expansion of CD diamond 2 and the thermal coefficient of expansion of chip are more or less the same, the thermal coefficient of expansion of transition zone 5 is between CD diamond 2 and chip 6, and gradually from CD diamond 2 to chip 6 trapezoidal transition, therefore can eliminate or reduce because the inconsistent interfacial stress that causes of thermal coefficient of expansion.In order to eliminate or to reduce the Smile effect, the machining accuracy of CD diamond 2 is less than 0.5um, and the machining accuracy of transition zone 5 is seen shown in Figure 3.In addition, CD diamond 2 quality are hard, and thermal conductivity (500W/mK) is than common copper heat sink (397W/mK) height, and thermal conductivity is better, and transition zone 5 also has good thermal conductivity and conductivity.
Operation principle of the present invention is such:
The used heat that produces during chip operation reaches the CD diamond surface of high heat conductance through transition zone, transition zone and scolder effectively discharge the ability of stress, the thermal stress at interface can be eliminated or reduce to good plastic deformation, CD diamond quality is hard simultaneously, thermal deformation is little, can well clamp chip and indeformable or crooked.The CD diamond is except small part is dispelled the heat by radiation, and most of heats pass to the copper micro-channel heat sink by heat conducting mode, and the deionized water by efficient cooling cools off.
Description of drawings:
Fig. 1 is array " Smile " the effect image that photographs with CCD when not adopting CD diamond sandwich.
Fig. 2 is the encapsulation schematic diagram of device of the present invention.
Among the figure (a), 1 is negative electrode, and 2 is the CD diamond, and 3 is the heat sink and positive electrode of microchannel copper, and 4 is insulating barrier, and 5 is transition zone, and 6 is chip, and 7 is the amplifier section of chip.
Among the figure (b), 7 is the amplifier section of chip, and 8 is the luminous zone, and 9 is chip N face, and 10 is chip P face.
Fig. 3 is the requirement of the transition zone surface depth of parallelism and machining accuracy.
Fig. 4 photographs the luminous image in chip active region with CCD after adopting this encapsulating structure.
Embodiment
The present invention encapsulates shown in Fig. 2-3.On CD diamond 2, utilize the mode deposit thickness of sputter coating to be followed successively by the Ti-Pt-Au-Pt-Au transition zone 5 of 100nm/120nm/3000nm/100nm/200nm; with the machining accuracy of chip contact-making surface be 0.1um; with the machining accuracy of CD diamond contact-making surface be the 0.6um a small amount of In scolder of hydatogenesis on the Au of transition zone layer then; to be of a size of the P face 10 of 11mm * 1.3mm * 0.89um diode laser array chip 6 and N face 9 and the CD diamond 2 that has deposited transition zone respectively under the protection of inert gas or vacuum condition welding or press together; welding temperature forms a kind of sandwich sandwich between 200 ℃-250 ℃.The machining accuracy of CD diamond surface is 0.5um, thermal conductivity is 500W/mK, because the active region of diode chip for backlight unit 6 is luminous zone 8 and the about 2 μ m of chip P face 10 distances, and be about 120～150 μ m with the distance of N face 9, minimum for the diode chip for backlight unit 6 and the thermal resistance at heat sink 3 interfaces are reduced to, must will weld with chip P face 10 or the diamond of pressing is welded on the heat sink and positive electrode 3 of microchannel copper and better dispels the heat with the fusing point InSn alloy lower than In.The purpose that adopts the fusing point InSn lower than In is that the In scolder is not melted in order to weld for the second time, guarantees primary welding quality.Then on the heat sink and positive electrode 3 of microchannel copper with InSn scolder welding insulation layer 4, at last insulating barrier 4 and above the CD diamond 2 with the InSn negative electrode 1 of burn-oning.Near the array that arrives with the CCD cameras record after encapsulation chip active region image when luminous threshold value, luminescence unit is of a size of 100um, duty ratio is 1: 1, the multiplication factor of CCD is 15, find to compare with the encapsulation of not adopting CD diamond sandwich, array Smile effect is eliminated substantially or is obviously reduced.(see figure 4)
Claims (1)
1, a kind of diode laser array sandwich encapsulating structure, it is characterized in that it is made up of following each layer from top to bottom: ground floor is negative electrode (1), the second layer is CD diamond (2), weld together by the InSn scolder between the ground floor and the second layer, the 3rd layer of transition zone (5), also weld together between the second layer and the 3rd layer with the InSn scolder, the 4th layer is chip (6), be the In scolder between the 3rd layer and the 4th layer, layer 5 is transition zone (5), weld together by the In scolder between the 4th layer and the layer 5, layer 6 is CD diamond (2), layer 5 and layer 6 weld together by the InSn scolder, layer 7 is the heat sink and positive electrode (3) of microchannel copper, and layer 6 and layer 7 weld together by the InSn scolder, and insulating barrier (4) is between ground floor and layer 7, second back to layer 6 all welds together by the InSn scolder between insulating barrier (4) and ground floor and the layer 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420092969 CN2759021Y (en) | 2004-09-24 | 2004-09-24 | Diode laser array sandwich packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420092969 CN2759021Y (en) | 2004-09-24 | 2004-09-24 | Diode laser array sandwich packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2759021Y true CN2759021Y (en) | 2006-02-15 |
Family
ID=36079157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200420092969 Expired - Fee Related CN2759021Y (en) | 2004-09-24 | 2004-09-24 | Diode laser array sandwich packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2759021Y (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290704A (en) * | 2011-08-02 | 2011-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Thin-outline (TO) encapsulating structure and method for semiconductor laser |
| CN104368891A (en) * | 2013-08-16 | 2015-02-25 | 东方强光（北京)科技有限公司 | Lamination sintering clamp for laser array units |
| CN106329308A (en) * | 2016-10-26 | 2017-01-11 | 西安炬光科技股份有限公司 | Semiconductor laser encapsulation structure with low Smile |
| CN107810582A (en) * | 2015-05-19 | 2018-03-16 | Ii-Vi激光股份有限公司 | The controlled laser diode module of a kind of low thermal resistance, stress |
| CN112821188A (en) * | 2019-10-30 | 2021-05-18 | 山东华光光电子股份有限公司 | Pump laser packaging structure and packaging method |
-
2004
- 2004-09-24 CN CN 200420092969 patent/CN2759021Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290704A (en) * | 2011-08-02 | 2011-12-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Thin-outline (TO) encapsulating structure and method for semiconductor laser |
| CN104368891A (en) * | 2013-08-16 | 2015-02-25 | 东方强光（北京)科技有限公司 | Lamination sintering clamp for laser array units |
| CN104368891B (en) * | 2013-08-16 | 2016-08-10 | 东方强光（北京)科技有限公司 | A kind of fixture of laser bar bar element stack sintering |
| CN107810582A (en) * | 2015-05-19 | 2018-03-16 | Ii-Vi激光股份有限公司 | The controlled laser diode module of a kind of low thermal resistance, stress |
| CN106329308A (en) * | 2016-10-26 | 2017-01-11 | 西安炬光科技股份有限公司 | Semiconductor laser encapsulation structure with low Smile |
| WO2018077078A1 (en) * | 2016-10-26 | 2018-05-03 | 西安炬光科技股份有限公司 | Package structure of low-smile semiconductor laser |
| CN112821188A (en) * | 2019-10-30 | 2021-05-18 | 山东华光光电子股份有限公司 | Pump laser packaging structure and packaging method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI504029B (en) | Silicone based reflective underfill and thermal coupler for flip chip led | |
| CN100487890C (en) | Systems and methods for removing operating heat from a light emitting diode | |
| CN1731592A (en) | Flip-chip bonded structure light-emitting diode and its manufacture method | |
| CN103457151B (en) | The quasi-continuous semiconductor laser bar of a kind of high temperature braze material folds battle array method for packing | |
| CN105406350A (en) | Semiconductor Lasers | |
| CN101442099A (en) | Structure of low thermal resistance LED and method for producing the same | |
| CN102097743B (en) | Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser | |
| CN102664227A (en) | Semiconductor light emitting diode (LED) device and formation method thereof | |
| CN2759021Y (en) | Diode laser array sandwich packaging structure | |
| CN111326489A (en) | Power device packaging structure | |
| CN101409319A (en) | Method for manufacturing LED using bonding technology | |
| CN102522695A (en) | Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof | |
| CN101140963A (en) | Method for enhancing upside-down mounting welding core plate brightness | |
| CN1581503A (en) | Nitride device upside down mounting method | |
| CN201966486U (en) | Semiconductor laser module | |
| CN107591475B (en) | High power LED device and LED chip die-bonding method | |
| CN101740671A (en) | Packaging structure of light-emitting diode | |
| CN111933784A (en) | Ceramic packaging method of laser chip and ceramic packaging chip structure | |
| CN101740674A (en) | Light-emitting element structure and manufacturing method thereof | |
| CN201450017U (en) | Single electrode LED chip structure | |
| CN102569100A (en) | Method for manufacturing heat dissipation seat of semiconductor assembly | |
| JP6156693B2 (en) | Manufacturing method of semiconductor device | |
| JPS60157284A (en) | Semiconductor device | |
| TWI275191B (en) | Thermal efficient package structure for high power LED | |
| CN111092364A (en) | Micro-channel packaging structure of high-power bar laser and sintering method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060215 |