CN102097743B - Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser - Google Patents
Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser Download PDFInfo
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- CN102097743B CN102097743B CN2010105822080A CN201010582208A CN102097743B CN 102097743 B CN102097743 B CN 102097743B CN 2010105822080 A CN2010105822080 A CN 2010105822080A CN 201010582208 A CN201010582208 A CN 201010582208A CN 102097743 B CN102097743 B CN 102097743B
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Abstract
The invention discloses a method for assembling double-side mounting soldering matching sheets of a centimeter-grade strip-shaped semiconductor laser, belonging to the field of semiconductor laser device manufacturing technology. In the prior art, a chip is embedded into a heat sink and the chip and the heat sink are integrally soldered by soft solders, whisker substances are generated owing to the crawling of the solders so as to lead the device to deteriorate and be damaged, furthermore, smiling effect of the chip is also caused. According to the invention, the chip is subjected to pretreatment before being assembled with the heat sink, and the method comprises the steps: manufacturing the matching sheet at first: W-Cu composite material is chosen to be the material of the manufacturing sheet, the dimension of the manufacturing sheet is determined as bellows: the thickness is from 0.2 to 0.5mm and the length and the width are 2 to 5% of those of the chip, a Ti layer, a Pt layer and an Au layer are sequentially spluttered on two surfaces of the manufacturing sheet, the Au layer is then thickened by electroplating, a solder extension area is formed at the edge of one of the surfaces of the matching sheet by adopting a masking technique, afterwards, a hard solder layer which is 2 to 4mum thick is spluttered on this surface; and secondly, sandwiching the chip: the chip is arranged between the hard solder layer-spluttered surfaces of the two matching sheets manufactured, and the mounting soldering and the sandwiching of the chip are completed by a chip mounter.
Description
Technical field
The present invention relates to a kind of centimetre of two-sided subsides weldering of bar semiconductor laser coupling sheet assembly method, can prevent device degradation, damage, improve device reliability and life-span, be convenient to collimation, coupling in the device use, belong to semiconductor laser device manufacturing technology field.
Background technology
Because high power semiconductor lasers has huge advantage at aspects such as volume, weight, electrical efficiency and modulating characteristics, thereby is widely used in fields such as medical treatment, materials processing, laser pumping, image record, weaponry and spatial light communication.The method that obtains high-power output is that multiple semiconductor laser devices is formed one dimension, two-dimensional array.A kind of manufacturing approach of semiconductor laser array is a plurality of single die lasers that cleavage goes out word order from the epitaxial wafer; Arranging total length is one centimetre; Obtain centimetre bar semiconductor laser chip thus; See shown in Figure 1ly,, obtain the one dimension semiconductor laser array thus hereinafter to be referred as chip 1.With a plurality of said chip 1 lamination assemblings, constitute the two-dimensional semiconductor laser array, laser output power significantly improves.
In centimetre assembling process of bar semiconductor laser, with chip 1 embed heat sink and with the two integrally welded be a key link.The oxygen-free copper of said heat sink employing high heat conductance is made, and still, the thermal coefficient of expansion of oxygen-free copper is three times of thermal coefficient of expansion of chip substrate material GaAs, serious thermal mismatching between heat sink and chip, occurs.The thermal stress that prior art utilizes the plastic deformation of slicken solder such as indium to come the released heat mismatch to introduce.Simultaneously, for guaranteeing sintering strength, heat sink surface slicken solder vapor deposition layer is also thicker.Yet the employing of slicken solder brings new technical problem for the assembling of centimetre bar semiconductor laser.At first, scolder taking place during high temperature sintering easily climb, generate whiskers, causes device degradation, damage.Secondly, slicken solder has plastic deformation, pressure welding unbalance stress in sintering process, and there is the shortcoming of easy oxidation in slicken solder itself, and these factors cause " smile effect " of chip 1, and then the thermal resistance increase, cause device reliability to reduce the lost of life; " smile effect " causes difficulty also for collimation, coupling in centimetre bar semiconductor laser use simultaneously.
Summary of the invention
Its purpose of the present invention is, avoids that the device reliability that phenomenon causes reduces, the lost of life because of slicken solder climbs, and significantly reduces " smile effect ".We have proposed the present invention's the two-sided subsides weldering of a kind of centimetre of bar semiconductor laser coupling sheet assembly method for this reason.
The present invention is characterized in that, with a centimetre bar semiconductor laser chip be chip 1 embed heat sink and adopt slicken solder with the two integrally welded before, said chip 1 is done preliminary treatment:
1, makes coupling sheet 2
At first its material is chosen to be the W-Cu composite material that contains Cu 7～12% (wt%); Secondly be sized to thickness 0.2～0.5mm, length and width greater than 2～5% of chip 1 size, see Fig. 2, shown in Figure 4, sputtered with Ti layer, Pt layer, Au layer successively on 2 two surfaces of coupling sheet; See shown in Figure 3; Thickness is followed successively by 100～200nm, 200～300nm, 400～800nm, electroplates afterwards the Au layer is thickeied to 1～2 μ m, and the 3rd adopts mask technique to reserve scolder zones of extensibility 3 at a marginal surface of coupling sheet 2; At the thick hard solder bed of material 4 of this face sputter 2～4 μ m, see Fig. 2, shown in Figure 3 then;
2, chip 1 clamps
Place coupling sheet 2 sputters of two mades to have between the surface of the hard solder bed of material 4 chip 1, chip 1 exiting surface and coupling sheet 2 justified margins adopt chip mounter to accomplish the subsides weld clip dress of chip 1, see shown in Figure 4.
Its technique effect of the present invention is that material is the coupling sheet of W-Cu composite material and the strict coupling of thermal coefficient of expansion of GaAs chip substrate, therefore, can adopt hard solder that chip 1 and two coupling sheets 2 subsides are welded into one.Compare slicken solder, the hard solder phenomenon of climbing is very light, moreover reserves scolder zones of extensibility 4 at coupling sheet 2 edges, so, device degradation, damage consequence that the generation because of whiskers causes can not take place.Hard solder does not have plastic deformation, is difficult for oxidation yet, no matter whether in chip mounter, accomplish in the subsides weld clip process of assembling of chip 1 pressure welding stressed even, all can significantly reduce chip 1 " smile effect ".In the process that pretreated chip 1 is assembled in heat sink, though still adopt the slicken solder welding, because the fusing point of slicken solder is lower than hard solder fusing point, so, under the clamping of coupling sheet 2, significantly " smile effect " can not take place yet; And, although slicken solder still can climb, even generate whiskers, because the length and width size of coupling sheet 2 is slightly larger than chip 1 size, so be unlikely to cause device degradation, damage.Adopt the present invention's method that chip 1 is carried out preliminary treatment, thickness increases little, still can adopt existing technology assembling one dimension or two-dimensional array device, draws electrode process like aforementioned slicken solder sintering process and crimping and can continue to use.
Description of drawings
Fig. 1 is a centimetre bar semiconductor laser chip shape sketch map.Fig. 2 is the coupling plate shape sketch map of made of the present invention.Fig. 3 is that coupling sheet one end and the sputter of made of the present invention has the local cross-sectional schematic of amplifying of the hard solder bed of material one side.Fig. 4 is the chip sketch map that the present invention has accomplished two-sided subsides weldering coupling sheet, and this figure double as is a Figure of abstract.
Embodiment
The present invention implements like this, with a centimetre bar semiconductor laser chip be chip 1 embed heat sink and adopt slicken solder with the two integrally welded before, said chip 1 is done preliminary treatment: 1, make and mate sheet 2.At first its material is chosen to be the W-Cu composite material that contains Cu 7～12% (wt%), is sized to thickness 0.2～0.5mm, length and width greater than 2～5% of chip 1 size, sees shown in Figure 2.So select materials and definite size, can realize mating the good thermal expansion matching of sheet 2 and chip 1 substrate first, in the time of second can avoiding in heat sink, assembling chip 1, because of the infringement of climbing device being caused of slicken solder.Secondly sputtered with Ti, Pt, Au layer successively on 2 two surfaces of coupling sheet are seen shown in Figure 3ly, and thickness is followed successively by 100～200nm, 200～300nm, 400～800nm, electroplates afterwards the Au layer is thickeied to 1～2 μ m.Wherein the Ti layer plays bonding and supporting role; The Pt layer is the barrier layer, prevents that the heat sink copper atom of oxygen-free copper spreads to chip under the high temperature; The Au layer is as contact conductive layer, and has very strong oxidation resistance and extreme high reliability.The 3rd adopts mask technique to reserve scolder zones of extensibility 3 at a marginal surface of coupling sheet 2, at the thick hard solder bed of material 4 of this face sputter 2～4 μ m, sees Fig. 2, shown in Figure 3 then.The scolder zones of extensibility of being reserved 3 is the part of coupling sheet 2 length and width sizes greater than chip 1.Scolder zones of extensibility 3 can be tackled slightly climbing of hard solder.The selection of hard solder has two kinds of schemes, and the one, two coupling sheets 2 that are used to clamp chip 1 use identical hard solders, like golden tin solder, are specially Au80Sn20 or Au70Sn30; The 2nd, two coupling sheets 2 that are used to clamp chip 1 use different hard solders, use golden tin solder like a slice, and another sheet uses fusing point to be higher than the golden germanium scolder of golden tin solder.2, chip 1 clamps.Place coupling sheet 2 sputters of two mades to have between the surface of the hard solder bed of material 4 chip 1, chip 1 exiting surface and coupling sheet 2 justified margins adopt chip mounter to accomplish the subsides weld clip dress of chip 1.The concrete mistake claim as follows, and when two coupling sheets 2 that are used to clamp chip 1 used identical hard solder, like golden tin solder, sheet 2 sputters are mated with a slice in elder generation had the surface of the hard solder bed of material 4 to be placed on the objective table up; Then the P of chip 1 is faced down and be placed on the coupling sheet 2; Last have the surface of the hard solder bed of material 4 to be placed on the chip 1 down another sheet coupling sheet 2 sputters again.At 0.3～0.5N/mm
2It is fixing to exert pressure with briquetting in the scope.Feed protective gas, like inert gas, nitrogen, nitrogen and hydrogen mixture (N
290%, H
210%) a kind of.Heating is accomplished and is pasted weldering.The coupling sheet 2 of P face one side of mark chip 1 is convenient to subsequent process steps and is differentiated.When two coupling sheets 2 that are used to clamp chip 1 use different hard solders; Use golden tin solder like a slice; Another sheet uses fusing point to be higher than golden tin solder gold germanium scolder, and earlier a slice being mated sheet 2 sputters has the surface of the higher hard solder bed of material 4 of fusing point to be placed on the objective table up; Then the P of chip 1 is faced down and be placed on the coupling sheet 2.The one side that adopts said subsides welder to plant to accomplish chip 1 is pasted the weld clip dress.There is the surface of the lower hard solder bed of material 4 of fusing point to be placed on the chip 1 down another sheet coupling sheet 2 sputters more afterwards.The another side that adopts said subsides welder to plant again to accomplish chip 1 pastes the weld clip dress.
Illustrate the present invention's method below.
Embodiment one: chip 1 length and width are of a size of 10 * 1mm.Coupling sheet 2 its materials are chosen to be the W-Cu composite material that contains Cu 7～12% (wt%), are sized to thickness 0.2mm, length and width 10.2 * 1.02mm, see shown in Figure 2.Sputtered with Ti, Pt, Au layer successively on coupling sheet 2 two surfaces are seen shown in Figure 3ly, and thickness is followed successively by 100nm, 200nm, 400nm, electroplates afterwards the Au layer is thickeied to 1.5 μ m.Adopt mask technique to reserve scolder zones of extensibility 3, at the thick hard solder bed of material 4 of this face sputter 3 μ m, see Fig. 2, shown in Figure 3 then at a marginal surface of coupling sheet 2.The scolder zones of extensibility of being reserved 3 is the part of coupling sheet 2 length and width sizes greater than chip 1.Be used to clamp the identical hard solder gold tin solder Au80Sn20 of two coupling sheets 2 uses of chip 1.Adopt chip mounter to accomplish the subsides weld clip dress of chip 1, earlier a slice being mated sheet 2 sputters has the surface of the hard solder bed of material 4 to be placed on the objective table up; Then the P of chip 1 is faced down and be placed on the coupling sheet 2; Last have the surface of the hard solder bed of material 4 to be placed on the chip 1 down another sheet coupling sheet 2 sputters again, chip 1 exiting surface and coupling sheet 2 justified margins.With the briquetting 0.3N/mm that exerts pressure
2Fixing.Feed N
290%, H
210% nitrogen and hydrogen mixture is as protective gas, and heating is accomplished and pasted weldering.The coupling sheet 2 of P face one side of mark chip 1 is convenient to subsequent process steps and is differentiated.
Embodiment two: chip 1 length and width are of a size of 10 * 2mm.Coupling sheet 2 its materials are chosen to be the W-Cu composite material that contains Cu 7～12% (wt%), are sized to thickness 0.3mm, length and width 10.2 * 2.04mm, see shown in Figure 2.Sputtered with Ti, Pt, Au layer successively on coupling sheet 2 two surfaces are seen shown in Figure 3ly, and thickness is followed successively by 150nm, 300nm, 600nm, electroplates afterwards the Au layer is thickeied to 1 μ m.Adopt mask technique to reserve scolder zones of extensibility 3, at the thick hard solder bed of material 4 of this face sputter 3 μ m, see Fig. 2, shown in Figure 3 then at a marginal surface of coupling sheet 2.The scolder zones of extensibility of being reserved 3 is the part of coupling sheet 2 length and width sizes greater than chip 1.Be used to clamp two different hard solders of coupling sheets 2 uses of chip 1, a slice is used golden tin solder, and another sheet uses fusing point to be higher than the golden germanium scolder of golden tin solder.In chip mounter, accomplish the subsides weld clip dress of chip 1, earlier a slice being mated sheet 2 sputters has the surface of the golden germanium scolder hard solder bed of material 4 to be placed on the objective table up; Then the P of chip 1 is faced down and be placed on the coupling sheet 2.With the briquetting 0.5N/mm that exerts pressure
2Fixing.Feed inert gas as protective gas, heating is accomplished and is pasted weldering.There is the surface of the golden tin solder hard solder bed of material 4 to be placed on the chip 1 down another sheet coupling sheet 2 sputters more afterwards, chip 1 exiting surface and coupling sheet 2 justified margins.The another side that adopts said subsides welder to plant again to accomplish chip 1 pastes the weld clip dress.The coupling sheet 2 of P face one side of mark chip 1 is convenient to subsequent process steps and is differentiated.
Claims (7)
1. the two-sided subsides weldering of one kind of centimetre of bar semiconductor laser coupling sheet assembly method is characterized in that, with a centimetre bar semiconductor laser chip be chip (1) embed heat sink and the employing slicken solder with the two integrally welded before, said chip (1) is done preliminary treatment:
One, make coupling sheet (2):
At first mate sheet (2) material and be chosen to be the W-Cu composite material that contains Cu 7～12wt%; Be sized to thickness 0.2～0.5mm, length and width greater than 2～5% of chip (1) size; Sputtered with Ti layer, Pt layer, Au layer successively on coupling sheet (2) two surfaces afterwards; Thickness is followed successively by 100～200nm, 200～300nm, 400～800nm; Plating is afterwards thickeied to 1～2 μ m the Au layer, adopts mask technique to reserve scolder zones of extensibility (3) at a marginal surface of coupling sheet (2) afterwards, then at the thick hard solder bed of material (4) of this face sputter 2～4 μ m;
Two, clamping of chip (1):
Place coupling sheet (2) sputter of two mades to have between the surface of the hard solder bed of material (4) chip (1), chip (1) exiting surface and two coupling sheet (2) justified margins adopt chip mounter to accomplish the subsides weld clip dress of chip (1).
2. assembly method according to claim 1 is characterized in that, the scolder zones of extensibility of being reserved (3) is the part of coupling sheet (2) length and width size greater than chip (1).
3. assembly method according to claim 1 is characterized in that, is used to clamp the identical or different hard solder of two coupling sheets (2) use of chip (1).
4. assembly method according to claim 3 is characterized in that, when the two coupling sheets (2) that are used to clamp chip (1) use identical hard solder, is golden tin solder.
5. assembly method according to claim 3 is characterized in that, when being used to clamp the different hard solder of two coupling sheets (2) use of chip (1), a slice is used golden tin solder, and another sheet uses fusing point to be higher than the golden germanium scolder of golden tin solder.
6. according to claim 1,3,4 described assembly methods, it is characterized in that earlier a slice being mated sheet (2) sputter has the surface of the golden tin solder hard solder bed of material (4) to be placed on the objective table up; Then the P of chip (1) is faced down and be placed on the coupling sheet (2); There is the surface of the golden tin solder hard solder bed of material (4) to be placed on the chip (1) down another sheet coupling sheet (2) sputter more at last, chip (1) exiting surface and two coupling sheet (2) justified margins; At 0.3～0.5N/mm
2It is fixing to exert pressure with briquetting in the scope, feeds a kind of of inert gas, nitrogen, nitrogen and hydrogen mixture, and said nitrogen and hydrogen mixture comprises 90% N
2With 10% H
2, heating is accomplished and is pasted weldering.
7. according to claim 1,3,5 described assembly methods, it is characterized in that earlier a slice being mated sheet (2) sputter has the surface of the golden germanium scolder hard solder bed of material (4) to be placed on the objective table up; Then the P of chip (1) being faced down is placed on the coupling sheet (2), chip (1) exiting surface and coupling sheet (2) justified margin; At 0.3～0.5N/mm
2It is fixing to exert pressure with briquetting in the scope, feeds inert gas, nitrogen, nitrogen and hydrogen mixture (N
290%, H
210%) a kind of, heating is accomplished and is pasted weldering; There is the surface of the golden tin solder hard solder bed of material (4) to be placed on the chip (1) down another sheet coupling sheet (2) sputter more afterwards; At 0.3～0.5N/mm
2It is fixing to exert pressure with briquetting in the scope, feeds a kind of of inert gas, nitrogen, nitrogen and hydrogen mixture, and said nitrogen and hydrogen mixture comprises 90% N
2With 10% H
2, heating is accomplished and is pasted weldering.
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| CN2010105822080A CN102097743B (en) | 2010-12-10 | 2010-12-10 | Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser |
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| CN2010105822080A CN102097743B (en) | 2010-12-10 | 2010-12-10 | Method for assembling double-side mounting soldering matching sheets of centimeter-grade strip-shaped semiconductor laser |
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| CN102097743B true CN102097743B (en) | 2012-05-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103205710B (en) * | 2012-01-12 | 2015-04-15 | 郑州大学 | Thermal expansion coefficient adjustable solder used for semiconductor laser array |
| CN102814568B (en) * | 2012-08-14 | 2015-02-25 | 中国电子科技集团公司第十一研究所 | Casting welding method |
| CN106329308A (en) * | 2016-10-26 | 2017-01-11 | 西安炬光科技股份有限公司 | Semiconductor laser encapsulation structure with low Smile |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN109818255B (en) * | 2019-03-13 | 2020-03-24 | 西安炬光科技股份有限公司 | Refrigerator, packaging structure and method for improving smile |
| CN110265865A (en) * | 2019-05-23 | 2019-09-20 | 深圳新飞通光电子技术有限公司 | A kind of assemble method of the biradical seat of chip of laser |
| CN110729629A (en) * | 2019-10-30 | 2020-01-24 | 长春理工大学 | Semiconductor laser packaging structure based on graphene film and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367557A (en) * | 2002-02-01 | 2002-09-04 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array |
| CN2687909Y (en) * | 2003-09-03 | 2005-03-23 | 福州晶阵半导体有限公司 | Short-cavity solid laser |
| TW200522233A (en) * | 2003-12-16 | 2005-07-01 | Univ Nat Central | Method for controlling the bond microstructures |
| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
| CN101741011A (en) * | 2009-12-24 | 2010-06-16 | 中国科学院上海微系统与信息技术研究所 | Low-stress encapsulating device and method for semiconductor laser to reliably work in wide temperature region |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008004835A (en) * | 2006-06-23 | 2008-01-10 | Sumitomo Electric Ind Ltd | Manufacturing method for semiconductor laser |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367557A (en) * | 2002-02-01 | 2002-09-04 | 中国科学院长春光学精密机械与物理研究所 | Preparation method of seal-packaged single-chip microchannel heat sink cooling laser diode array |
| CN2687909Y (en) * | 2003-09-03 | 2005-03-23 | 福州晶阵半导体有限公司 | Short-cavity solid laser |
| TW200522233A (en) * | 2003-12-16 | 2005-07-01 | Univ Nat Central | Method for controlling the bond microstructures |
| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
| CN101741011A (en) * | 2009-12-24 | 2010-06-16 | 中国科学院上海微系统与信息技术研究所 | Low-stress encapsulating device and method for semiconductor laser to reliably work in wide temperature region |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2008-4835A 2008.01.10 |
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