JP5666372B2 - Laminated material for insulating substrates - Google Patents

Description

  The present invention relates to a laminated material for an insulating substrate used for heat dissipation of a semiconductor element, a manufacturing method thereof, an insulating substrate, and a semiconductor module.

  In the present specification, the term “plate” is used to include “foil”.

  A semiconductor module such as a power semiconductor module includes a heat radiating member (eg, a heat sink, a cooler) in order to release heat generated from the semiconductor element due to the operation of the semiconductor element. Further, in this semiconductor module, an insulating substrate for heat dissipation for transferring heat generated from the semiconductor element to the heat dissipation member is disposed between the semiconductor element and the heat dissipation member. This insulating substrate is a conductor thermally but functions electrically as an insulator. Specifically, a ceramic layer as an electrical insulating layer and a wiring layer bonded on one side thereof A metal layer including a (circuit layer) (see, for example, Patent Documents 1 to 4). Then, the semiconductor element is joined to the metal layer of the insulating substrate by soldering.

  In recent years, an Al layer formed of Al or an Al alloy has been used as a layer constituting the metal layer. The reason is that the Al layer is excellent in electrical characteristics and thermal characteristics, and the use of the Al layer can reduce the manufacturing cost of the insulating substrate.

JP 2004-328012 A JP 2004-235503 A JP 2006-303346 A JP 2009-147123 A

  However, the Al layer has poor solderability. For this reason, a Ni plating layer is formed as a Ni layer on the surface of the Al layer so that the semiconductor elements can be joined by soldering. In this case, the strength of the bonding interface between the Al layer and the Ni plating layer is high. A weak alloy layer is formed. As a result, the alloy layer is likely to be cracked or peeled off due to the thermal stress (thermal strain) generated along with the cooling cycle, or the surface of the Ni layer is likely to be deformed (unevenness).

  The present invention has been made in view of the above-described technical background, and the object thereof is a laminated material used for an insulating substrate, which has good solder jointability, cracking and peeling at the joint interface, and the Ni layer. An object of the present invention is to provide a laminated material capable of preventing the occurrence of surface deformation (unevenness), a manufacturing method thereof, an insulating substrate, and a semiconductor module.

  The present invention provides the following means.

[1] An Ni layer formed of Ni or a Ni alloy having a semiconductor element bonded to the surface thereof, and a Ti layer formed of Ti or a Ti alloy arranged in a stacked manner on one side of the Ni layer are subjected to discharge plasma sintering. Joined by ligation,
The Ti layer and an Al layer formed of Al or an Al alloy arranged in a stacked manner on the opposite side of the Ti layer from the Ni layer arrangement side are joined by a discharge plasma sintering method. A laminated material for an insulating substrate.

  [2] The laminate for an insulating substrate as recited in the aforementioned Item 1, wherein the Al layer and the brazing filler metal layer arranged in a laminated manner on the side of the Al layer opposite to the Ti layer arrangement side are joined by a discharge plasma sintering method. Wood.

  [3] The first item 1 or 7 above, wherein a first alloy layer having a thickness of 7 μm or less formed by alloying Ni of the Ni layer and Ti of the Ti layer is formed at a bonding interface between the Ni layer and the Ti layer. The laminated material for insulating substrates according to 2.

  [4] A second alloy layer having a thickness of 5 μm or less formed by alloying Ti of the Ti layer and Al of the Al layer is formed at a bonding interface between the Ti layer and the Al layer. 4. A laminated material for an insulating substrate according to any one of 3 above.

  [5] The laminated material for an insulating substrate according to any one of [1] to [4], wherein the Al layer is formed of pure Al having a purity of 4N or higher.

[6] A discharge plasma sintering is performed on a Ni layer formed of Ni or a Ni alloy with a semiconductor element bonded to the surface and a Ti layer formed of Ti or a Ti alloy arranged on one side of the Ni layer. A first joining step for joining by a bonding method;
After the first bonding step, the Ti layer and an Al layer formed of Al or an Al alloy arranged in a stacked manner on the opposite side of the Ti layer from the Ni layer arrangement side are subjected to discharge plasma sintering. And a second bonding step for bonding by a method.

  [7] In the first bonding step, the Ni layer and the Ti layer are formed by alloying Ni of the Ni layer and Ti of the Ti layer at a bonding interface between these layers. 7. The method for producing a laminated material for an insulating substrate according to 6 above, wherein bonding is performed by a discharge plasma sintering method so that one alloy layer is formed.

  [8] In the second bonding step, the Ti layer and the Al layer are bonded to each other at a bonding interface between these layers, and Ti of the Ti layer and Al of the Al layer are alloyed to have a thickness of 5 μm or less. 8. The method for producing a laminated material for an insulating substrate according to 6 or 7 above, wherein bonding is performed by a discharge plasma sintering method so that two alloy layers are formed.

  [9] In the first joining step, the Ni layer and the Ti layer are joined by the discharge plasma sintering method in a state where the periphery of these layers is not surrounded by a cylindrical die for spark plasma sintering. The method for producing a laminated material for an insulating substrate according to any one of 8.

  [10] In the second joining step, the Ti layer and the Al layer are joined by a discharge plasma sintering method in a state where the periphery of these layers is not surrounded by a cylindrical die for spark plasma sintering. The method for producing a laminated material for an insulating substrate according to claim 9.

[11] In the first joining step,
A plurality of first unbonded stacks of the Ni layer and the Ti layer are prepared, and the plurality of first unbonded stacks are interposed between the first unbonded stacks adjacent to each other via a conductive release plate. And laminated
Subsequently, the manufacturing method of the laminated material for insulating substrates in any one of the preceding clauses 6-8 which joins Ni layer and Ti layer of each said 1st unjoined laminated body collectively by a discharge plasma sintering method.

[12] In the first joining step,
A plurality of first unbonded stacks of the Ni layer and the Ti layer are prepared, and the plurality of first unbonded stacks are interposed between the first unbonded stacks adjacent to each other via a conductive release plate. And laminated
Next, the Ni layer and the Ti layer of each of the first unbonded laminates are collectively collected by the discharge plasma sintering method without surrounding the plurality of first unbonded laminates with the discharge plasma sintering cylindrical die. 9. A method for producing a laminated material for an insulating substrate as described in any one of 6 to 8 above.

[13] In the second joining step,
A plurality of second unbonded stacks of the Ti layer and the Al layer are prepared, and the plurality of second unbonded stacks are interposed between the second unbonded stacks adjacent to each other via a conductive release plate. And laminated
Next, the manufacture of the laminated material for an insulating substrate according to any one of the preceding items 6 to 8, 11 and 12, wherein the Ti layer and the Al layer of each of the second unbonded stacked bodies are bonded together by a discharge plasma sintering method. Method.

[14] In the second joining step,
A plurality of second unbonded stacks of the Ti layer and the Al layer are prepared, and the plurality of second unbonded stacks are interposed between the second unbonded stacks adjacent to each other via a conductive release plate. And laminated
Next, the Ti layer and the Al layer of each of the second unbonded laminates are collectively collected by a discharge plasma sintering method without surrounding the plurality of second unbonded laminates with a cylindrical die for discharge plasma sintering. The manufacturing method of the laminated material for insulating substrates in any one of the preceding clauses 6-8, 11 and 12 which join it.

  [15] In the second joining step, the Ti layer, the Al layer, and a brazing filler metal layer disposed in a laminated form on the opposite side of the Al layer from the Ti layer disposition side are subjected to a discharge plasma sintering method. 8. The method for producing a laminated material for an insulating substrate as described in 6 or 7 above, wherein the laminated materials are joined simultaneously.

  [16] In the second bonding step, the Ti layer, the Al layer, and the brazing material layer are bonded to each other at the bonding interface between the Ti layer and the Al layer. 16. The method for producing a laminated material for an insulating substrate as described in 15 above, wherein the second alloy layers having a thickness of 5 μm or less formed by alloying are simultaneously joined by a discharge plasma sintering method.

  [17] In the second bonding step, the Ti layer, the Al layer, and the brazing material layer are formed by a discharge plasma sintering method in a state where the periphery of these layers is not surrounded by a cylindrical die for discharge plasma sintering. 17. The method for producing a laminated material for an insulating substrate as described in 15 or 16 above, wherein the laminated materials are joined simultaneously.

[18] In the second joining step,
A plurality of second unbonded stacked bodies of the Ti layer, the Al layer, and the brazing material layer are prepared, and the plurality of second unbonded stacked bodies are electrically conductive between the second unbonded stacked bodies adjacent to each other. Laminate through a release plate,
17. The method for producing a laminated material for an insulating substrate according to 15 or 16 above, wherein the Ti layer, the Al layer, and the brazing material layer of each of the second unbonded laminated bodies are simultaneously bonded together by a discharge plasma sintering method.

[19] In the second joining step,
A plurality of second unbonded stacked bodies of the Ti layer, the Al layer, and the brazing material layer are prepared, and the plurality of second unbonded stacked bodies are electrically conductive between the second unbonded stacked bodies adjacent to each other. Laminate through a release plate,
Next, the Ti layer, the Al layer, and the brazing material layer of each of the second unbonded laminates are subjected to discharge plasma sintering without surrounding the plurality of second unbonded laminates with a cylindrical die for discharge plasma sintering. 17. The method for producing a laminated material for an insulating substrate as described in 15 or 16 above, wherein the laminated materials are joined together by a bonding method.

  [20] The method for manufacturing a laminated material for an insulating substrate according to any one of items 6 to 19, wherein the Al layer is formed of pure Al having a purity of 4N or higher.

  [21] An insulating substrate comprising the laminated material according to any one of 1 to 5 above.

  [22] A semiconductor module, wherein a semiconductor chip is joined to the surface of the Ni layer of the laminated material according to any one of 1 to 5 by soldering.

  The present invention has the following effects.

  Since the laminated material for an insulating substrate described in [1] is provided with a Ni layer, the solderability is good. Therefore, the semiconductor element can be reliably bonded to the surface of the Ni layer by soldering.

  Furthermore, since the Ti layer is disposed between the Ni layer and the Al layer, the following effects can be obtained. That is, if the Ni layer and the Al layer are directly bonded without disposing the Ti layer between the Ni layer and the Al layer, an alloy layer having low strength is formed at the bonding interface between the Ni layer and the Al layer. As a result, the alloy layer is likely to be cracked or peeled off due to thermal stress (thermal strain) generated with the cooling / heating cycle. On the other hand, in the laminated material described in [1], the Ti layer is disposed between the Ni layer and the Al layer, so that such a weak alloy layer is not formed. Thereby, the generation | occurrence | production of the crack and peeling in the joining interface of a laminated material by a thermal stress can be prevented, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface of Ni layer can also be prevented.

  Moreover, the first alloy layer formed by alloying Ni of the Ni layer and Ti of the Ti layer at the joint interface between the Ni layer and the Ti layer by joining the Ni layer and the Ti layer by the discharge plasma sintering method. Is formed. The first alloy layer includes a Ni—Ti superelastic alloy phase and adopts a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction. Therefore, this first alloy layer plays a role of reliably relaxing and absorbing thermal stress. Therefore, it is possible to reliably prevent the occurrence of cracks and peeling at the bonding interface of the laminated material and the deformation of the surface of the Ni layer.

  In addition, since the joining means between the Ni layer and the Ti layer and the joining means between the Ti layer and the Al layer are both of the discharge plasma sintering method, the dimensional change of each layer before and after joining can be reduced. Thereby, a laminated material having high dimensional accuracy can be obtained.

  Further, by adopting the discharge plasma sintering method as a joining means between the Ti layer and the Al layer, it is possible to join a thick Al layer with the Ti layer as compared with the case where clad joining is adopted as the joining means. It becomes possible. Therefore, the Al layer can function reliably as a wiring layer.

  In the laminated material described in [2], the Al layer and the brazing material layer are joined. Therefore, when this brazing material layer is joined to the laminated material and a predetermined layer (eg, ceramic layer) of the insulating substrate. It can be used as a brazing material. Therefore, the laminated material and the predetermined layer of the insulating substrate can be easily joined.

  In the laminated material described in [3], the first alloy layer formed at the joint interface between the Ni layer and the Ti layer generally has a low thermal conductivity, but the thickness of the first alloy layer is 7 μm or less. Thereby, the fall of the thermal conductivity of the laminated material by forming a 1st alloy layer can be prevented.

  In the laminated material described in [4], the second alloy layer formed at the bonding interface between the Ti layer and the Al layer is a layer including the most fragile phase in the laminated material. When the thickness is 5 μm or less, it is possible to prevent the occurrence of cracking or peeling at the bonding interface between the Ti layer and the Al layer.

  In the laminated material described in [5], the Al layer can be suitably used as a wiring layer by forming the Al layer with pure Al having a purity of 4N or higher.

  In the method for producing a laminated material for an insulating substrate described in [6], the laminated material described in [1] can be produced.

  According to the method for manufacturing a laminated material described in [7], the discharge plasma sintering is performed so that the first alloy layer having a thickness of 7 μm or less is formed at the joint interface between the Ni layer and the Ti layer. By joining by the method, it is possible to prevent a decrease in the thermal conductivity of the laminated material due to the formation of the first alloy layer.

  According to the method for manufacturing a laminated material described in [8] above, spark plasma sintering is performed so that the second alloy layer having a thickness of 5 μm or less is formed at the bonding interface between the Ti layer and the Al layer. By joining by the method, it is possible to prevent the occurrence of cracking or peeling at the joining interface due to the formation of the second alloy layer.

  According to the method for manufacturing a laminated material described in [9] above, the Ni layer and the Ti layer are joined by the discharge plasma sintering method without surrounding the layers with the discharge plasma sintering cylindrical die. Thus, the setting operation of these layers and the taking-out operation after the bonding can be easily performed at the time of bonding by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about a discharge plasma sintering apparatus can be aimed at.

  According to the method for manufacturing a laminated material described in [10] above, the Ti layer and the Al layer are joined by the discharge plasma sintering method without surrounding the layers with the discharge plasma sintering cylindrical die. Thus, as in the method for producing a laminated material described in [9], the setting operation of these layers and the taking-out operation after the bonding can be easily performed at the time of bonding by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about a discharge plasma sintering apparatus can be aimed at.

  According to the method for manufacturing a laminated material described in [11], the Ni layer and the Ti layer of each first unbonded laminated body are bonded together by a discharge plasma sintering method to obtain the Ni layer and the Ti layer. Can be produced in large quantities. Thereby, the manufacturing cost of a laminated material can be reduced.

  According to the method for manufacturing a laminated material described in [12] above, the Ni layer and the Ti layer of each first unbonded laminated body are bonded together by a discharge plasma sintering method, whereby the Ni layer and the Ti layer are bonded together. Can be produced in large quantities. Thereby, the manufacturing cost of a laminated material can be reduced.

  Further, by performing bonding by the discharge plasma sintering method without surrounding the plurality of first unbonded laminates by the discharge plasma sintering cylindrical die, these are bonded at the time of bonding by the discharge plasma sintering method. It is possible to easily perform the setting operation of the first unbonded laminate and the removing operation after the bonding. Thereby, joining work can be performed rapidly and the reduction of the installation cost about a discharge plasma sintering apparatus can be aimed at.

  According to the method for manufacturing a laminated material described in [13] above, a large amount of laminated material is manufactured by collectively joining the Ti layer and the Al layer of each second unbonded laminated body by a discharge plasma sintering method. can do. Thereby, the manufacturing cost of a laminated material can be reduced.

  According to the method for producing a laminated material described in [14], a large amount of laminated material is produced by collectively joining the Ti layer and the Al layer of each second unbonded laminated body by a discharge plasma sintering method. can do. Thereby, the manufacturing cost of a laminated material can be reduced.

  Furthermore, by joining by the discharge plasma sintering method without surrounding the plurality of second unbonded laminates by the discharge plasma sintering cylindrical die, it is possible to perform these steps when joining by the discharge plasma sintering method. The setting operation of the second unbonded laminate and the taking-out operation after bonding can be easily performed. Thereby, joining work can be performed rapidly and the reduction of the installation cost about a discharge plasma sintering apparatus can be aimed at.

  According to the method for producing a laminated material described in [15], the Ti material, the Al layer, and the brazing material layer are simultaneously joined by the discharge plasma sintering method, thereby making it possible to improve the working efficiency of the laminated material having the brazing material layer. Can be obtained. Further, according to the laminated material thus obtained, the brazing material layer can be used as a brazing material when joining the laminated material and a predetermined layer (eg, ceramic layer) of the insulating substrate. And a predetermined layer of the insulating substrate can be easily bonded.

  According to the method for manufacturing a laminated material described in [16], the Ti alloy, the Al layer, and the brazing material layer are formed with the second alloy layer having a thickness of 5 μm or less at the joint interface between the Ti layer and the Al layer. Thus, by joining by a discharge plasma sintering method, the generation | occurrence | production of the crack and peeling in a joining interface by the 2nd alloy layer being formed can be prevented.

  According to the method for manufacturing a laminated material described in [17] above, the discharge plasma sintering is performed in such a manner that the Ti layer, the Al layer, and the brazing material layer are not surrounded by a cylindrical die for discharge plasma sintering. By joining by the method, the setting work of these layers and the taking-out work after joining can be easily performed at the time of joining by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about a discharge plasma sintering apparatus can be aimed at.

  According to the method for manufacturing a laminated material described in [18], the Ti layer, the Al layer, and the brazing material layer of each second unbonded laminated body are simultaneously bonded together by a discharge plasma sintering method. A large amount of material can be produced. Thereby, the manufacturing cost of a laminated material can be reduced.

  According to the method for manufacturing a laminated material described in [19], the Ti layer, the Al layer, and the brazing material layer of each second unbonded laminated body are simultaneously bonded together by a discharge plasma sintering method, thereby A large amount of material can be produced. Thereby, the manufacturing cost of a laminated material can be reduced.

  Furthermore, by joining by the discharge plasma sintering method without surrounding the plurality of second unbonded laminates by the discharge plasma sintering cylindrical die, it is possible to perform these steps when joining by the discharge plasma sintering method. The setting operation of the second unbonded laminate and the taking-out operation after bonding can be easily performed. Thereby, joining work can be performed rapidly and the reduction of the installation cost about a discharge plasma sintering apparatus can be aimed at.

  According to the method for manufacturing a laminated material described in [20], the Al layer can be suitably used as a wiring layer by forming the Al layer with pure Al having a purity of 4N or higher.

  The insulating substrate described in [21] above has the same advantages as the laminated material described in any one of [1] to [5] above.

  The semiconductor module described in the preceding item [22] has the same advantages as the laminated material described in any one of the above [1] to [5].

FIG. 1 is a front view of a semiconductor module including an insulating substrate manufactured using the laminated material according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view of the laminated material. FIG. 3 is a schematic cross-sectional view showing an example of the manufacturing process of the laminated material. FIG. 4 is a cross-sectional view showing a first joining step in which the Ni layer and the Ti layer are joined by a discharge plasma sintering method using a cylindrical die. FIG. 5 is a cross-sectional view showing a second joining process in which a Ti layer, an Al layer, and a brazing material layer are joined together by a discharge plasma sintering method using a cylindrical die. FIG. 6 is a cross-sectional view showing a case where the Ni layer and the Ti layer are joined by a discharge plasma sintering method without using a cylindrical die in the first joining step. FIG. 7 is a cross-sectional view showing a case where the Ni layer and the Ti layer of each first unbonded laminate are collectively bonded by a discharge plasma sintering method using a cylindrical die in the first bonding step. FIG. 8 is a cross-sectional view showing a case where the Ni layer and the Ti layer of each first unbonded laminate are collectively bonded by a discharge plasma sintering method without using a cylindrical die in the first bonding step. . FIG. 9 is a cross-sectional view showing a case where the Ti layer, the Al layer, and the brazing material layer are simultaneously joined by the discharge plasma sintering method without using a cylindrical die in the second joining step. FIG. 10 shows a case where the Ti layer, the Al layer, and the brazing filler metal layer of each second unbonded laminate are simultaneously bonded together by a discharge plasma sintering method using a cylindrical die in the second bonding step. It is sectional drawing. FIG. 11 shows a case where the Ti layer, the Al layer, and the brazing filler metal layer of each twelfth bonded laminate are simultaneously bonded together by a discharge plasma sintering method without using a cylindrical die in the second bonding step. It is sectional drawing. FIG. 12: is a schematic sectional drawing which shows an example of the manufacturing process of the laminated material which concerns on 2nd Embodiment of this invention.

  Next, several embodiments of the present invention will be described below with reference to the drawings.

  In the following description, the top and bottom of each drawing is referred to as the top and bottom. Moreover, the same code | symbol is attached | subjected to the same member through all drawings in each drawing.

  In FIG. 1, reference numeral 20 denotes a semiconductor module according to the first embodiment of the present invention. The semiconductor module 20 is an IGBT module, a MOSFET module, a thyristor module, a diode module, or the like, and includes a semiconductor element 21, an insulating substrate 15, and a heat dissipation member 17. The insulating substrate 15 is disposed between the semiconductor element 21 and the heat radiating member 17 and plays a role of transmitting heat generated from the semiconductor element 21 to the heat radiating member 17. Therefore, the insulating substrate 15 is required to have both excellent electrical insulation and high thermal conductivity.

  The semiconductor element 21 is an IGBT chip, a MOSFET chip, a thyristor chip, a diode chip, or the like.

  The heat radiating member 17 is an air-cooled or water-cooled heat sink or cooler, and is made of metal, specifically, for example, made of Al or an Al alloy. In the first embodiment, the heat dissipating member 17 is a heat sink having heat dissipating fins, for example.

  As shown in FIG. 2, the insulating substrate 15 is manufactured using the laminated material 1 </ b> A according to the first embodiment of the present invention. Specifically, the laminated substrate 1 </ b> A of the first embodiment and the ceramic A layer 10 and a metal base layer 12 are included.

The ceramic layer 10 is formed of a ceramic that functions as an electrical insulating layer in the insulating substrate 15 and is preferably made of AlN, Al ₂ O ₃ , Si ₃ N ₄ , Y ₂ O ₃ , CaO, BN, and BeO. It is formed of one or more ceramics selected from the group. The ceramic layer 10 is formed from a ceramic plate. The thickness of the ceramic layer 10 is, for example, 300 to 1000 μm. Incidentally, the melting point or decomposition point of the ceramic forming the ceramic layer 10 is AlN: 2200 ° C., Al ₂ O ₃ : 2050 ° C., Si ₃ N ₄ : 1900 ° C., Y ₂ O ₃ : 2400 ° C., CaO: 2570 ° C., BN: 3000 ° C., BeO: 2570 ° C. The size of the ceramic layer 10 is preferably set slightly larger than the other layers in order to ensure electrical insulation.

  The metal base layer 12 is disposed between the ceramic layer 10 and the heat radiating member 17 and is intended to alleviate thermal stress. The metal base layer 12 is formed from a metal plate, and is formed of, for example, Al or an Al alloy. The metal base layer 12 is joined to the lower surface side of the ceramic layer 10 in a laminated form by brazing. At the bonding interface between the metal base layer 12 and the ceramic layer 10, a brazing material layer 11 is formed by bonding the metal base layer 12 and the ceramic layer 10. A heat dissipation member 17 is joined to the metal base layer 12 by brazing or the like on the lower surface side of the metal base layer 12.

  The laminated material 1A of the first embodiment is bonded to one side of the ceramic layer 10 (on the upper surface side of the ceramic layer 10 in the first embodiment) by brazing with a ceramic layer, and a Ni layer 2, a Ti layer 4, an Al layer 6, a brazing material layer 7, and the like. In the drawing, the brazing filler metal layer 7 is shown by dot hatching for easy distinction from other layers.

  The Ni layer 2 is formed by bonding the semiconductor element 21 to the surface 2a (upper surface) by soldering. The Ni layer 2 is made of Ni or Ni alloy. More specifically, the Ni layer 2 is provided from a Ni plate or a Ni alloy plate.

  The Ti layer 4 is arranged in a stacked manner on the side opposite to the surface 2a side of the Ni layer 2 (that is, the lower side). The Ni layer 2 and the Ti layer 4 are joined by the discharge plasma sintering method. The Ti layer 4 is formed of Ti or a Ti alloy. Specifically, the Ti layer 4 is provided from a Ti plate or a Ti alloy plate.

  Further, a first alloy layer 3 formed by alloying Ni of the Ni layer 2 and Ti of the Ti layer 4 is formed at the bonding interface between the Ni layer 2 and the Ti layer 4. The first alloy layer 3 is formed when the Ni layer 2 and the Ti layer 4 are joined by the discharge plasma sintering method, and includes a Ni—Ti superelastic alloy phase. Moreover, the first alloy layer 3 adopts a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction. Therefore, the first alloy layer 3 plays a role of reliably relaxing and absorbing thermal stress (thermal strain). Thereby, the generation | occurrence | production of the crack and peeling in the joining interface of 1 A of laminated materials and the deformation | transformation (unevenness | corrugation) of the surface 2a of the Ni layer 2 of 1 A of laminated materials can be prevented reliably. The Ni—Ti superelastic alloy phase is, for example, a NiTi superelastic alloy phase in detail.

  The Al layer 6 is disposed in a stacked manner on the side opposite to the Ni layer 2 arrangement side of the Ti layer 4 (that is, the lower side). The Ti layer 4 and the Al layer 6 are joined by the discharge plasma sintering method. The Al layer 6 is made of Al or an Al alloy. More specifically, the Al layer 6 is provided from an Al plate or an Al alloy plate, for example. In particular, the Al layer 6 functions as a wiring layer of the insulating substrate 15 and has a stress relaxation function. Therefore, the Al layer 6 is formed of pure aluminum having a purity of 4N or more (that is, a purity of 99.99% by mass or more). good.

  Further, a second alloy layer 5 formed by alloying Ti of the Ti layer 4 and Al of the Al layer 6 is formed at the bonding interface between the Ti layer 4 and the Al layer 6. The second alloy layer 5 is formed when the Ti layer 4 and the Al layer 6 are joined by the discharge plasma sintering method, and includes a Ti—Al based alloy phase.

  Here, as described above, the first alloy layer 3 includes a Ni—Ti superelastic alloy phase, and this Ni—Ti superelastic alloy phase relaxes and absorbs thermal stress. However, the thermal conductivity of the Ni—Ti superelastic alloy is 12.1 W / m · K, which is significantly lower than the thermal conductivity of Al, 236 W / m · K. Therefore, it is desirable that the thickness of the first alloy layer 3 is as thin as possible from the viewpoint of preventing a decrease in the thermal conductivity of the laminated material 1A (and also the insulating substrate 15), and it is particularly preferably 7 μm or less. Although the lower limit of the thickness of the first alloy layer 3 is not limited, it is particularly desirable that the thickness is 2 μm in that it can relieve and absorb thermal stress with certainty.

  The thickness of the second alloy layer 5 is preferably as thin as possible from the viewpoint of preventing the occurrence of cracking and peeling at the bonding interface of the laminated material 1A (and further the insulating substrate 15), and is particularly preferably 5 μm or less. The lower limit of the thickness of the second alloy layer 5 is not limited, but is particularly preferably 0.8 μm.

  The thicknesses of the Ni layer 2 and the Ti layer 4 are not limited. However, the thermal conductivity of Ni is 90.7 W / m · K, the thermal conductivity of Ti is 21.9 W / m · K, and these thermal conductivities are compared with the thermal conductivity of Al 236 W / m · K. Remarkably low. Therefore, it is desirable that the thicknesses of the Ni layer 2 and the Ti layer 4 be as thin as possible in order to prevent a decrease in the thermal conductivity of the laminated material 1A (and also the insulating substrate 15). Therefore, it is particularly desirable that the Ni layer 2 has a thickness of 150 μm or less and the Ti layer 4 has a thickness of 100 μm or less. On the other hand, it is particularly desirable that the lower limit of the thickness of the Ni layer 2 is 5 μm and the lower limit of the thickness of the Ti layer 4 is 2 μm because the characteristics of the layers 2 and 4 can be exhibited reliably.

  The thickness of the Al layer 6 is not limited, but is preferably as thick as possible in order to make the Al layer 6 function as a wiring layer and a stress relaxation layer of the insulating substrate 15 reliably. However, in the first embodiment, the Al layer 6 is not joined to the Ti layer 4 by clad joining, but is joined by the discharge plasma sintering method, so a thick Al layer having a thickness of 0.1 to 2.0 mm is used. 6 can be bonded to the Ti layer 4. Therefore, the Al layer 6 can function reliably as a wiring layer and a stress relaxation layer.

  The brazing material layer 7 is used when the laminated material 1A and the ceramic layer 10 are joined by brazing. The brazing material layer 7 is on the side opposite to the side where the Ti layer 4 is disposed of the Al layer 6 of the laminated material 1A (that is, the lower side). Are arranged in a stack. The Al layer 6 and the brazing material layer 7 are joined by the discharge plasma sintering method. The brazing material layer 7 is preferably a layer provided and formed from an Al-based brazing material plate (e.g., an Al-Si based alloy brazing material plate). Although the thickness of the brazing material layer 7 is not limited, in order to ensure that the laminated material 1A and the ceramic layer 10 can be joined by brazing, and further to prevent a decrease in thermal conductivity. It is particularly desirable to set in the range of 10 to 70 μm.

  Next, an example of a method for manufacturing the laminated material 1A and the insulating substrate 15 according to the first embodiment will be described below with reference to FIGS.

  As shown in FIG. 3, the Ni layer 2 and the Ti layer 4 are adjacent to each other and joined in a laminated manner by a discharge plasma sintering method. This process is referred to as a “first bonding process”. In this first bonding step, the discharge plasma sintering method is used to form the Ni layer 2 and the Ti layer 4 so that the first alloy layer 3 having a thickness of 7 μm or less is formed at the bonding interface between the Ni layer 2 and the Ti layer 4. It is particularly desirable to join by.

  Here, the spark plasma sintering (SPS) method is generally applied to sinter powder or to join members together. In the first embodiment, the members are joined together. Has been applied to join. This discharge plasma sintering method is also called “SPS bonding method”, “Pulsed Current Hot Pressing (PCHP)” or the like. In FIG. 3, “SPS method” means a discharge plasma sintering method.

  When the Ni layer 2 and the Ti layer 4 are joined by the discharge plasma sintering method in the first joining step, first, as shown in FIG. 4, the inside of the cylindrical die 31 provided in the discharge plasma sintering apparatus 30 The Ni layer 2 and the Ti layer 4 are arranged in a stacked manner. Accordingly, the die 31 surrounds the periphery of the unbonded stacked body 8 of the Ni layer 2 and the Ti layer 4 (the unbonded stacked body 8 is referred to as “first unbonded stacked body 8” for the sake of convenience). Is done. The die 31 has conductivity, and is made of, for example, graphite. Next, the first unbonded laminate 8 is sandwiched between a pair of upper and lower punches 32 and 32 in the thickness direction. Each punch 32 has conductivity, and is made of, for example, graphite. An electrode 33 is electrically connected to the base of each punch 32. Then, for example, in a vacuum atmosphere of 1 to 10 Pa or in an inert gas atmosphere such as nitrogen or argon, both the punches 32 and 32 pressurize the first unbonded laminate 8 in the thickness direction while The first unbonded laminated body 8 is heated by applying a pulse current between the punches 32 and 32 in a state in which energization between the punches 32 and 32 is ensured, and thereby the Ni layer 2 and the Ti layer 4 are bonded. . The joined body 8Z of the Ni layer 2 and the Ti layer 4 thus obtained is referred to as a “first joined body 8Z” for convenience of explanation (see FIG. 3). In addition, by this bonding, the first alloy layer 3 is formed at the bonding interface between the Ni layer 2 and the Ti layer 4 of the first bonded body 8Z. As described above, the first alloy layer 3 includes a Ni—Ti superelastic alloy phase and adopts a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction. In this joining, it is desirable to set joining conditions (eg, heating temperature, holding time of heating temperature, heating rate, pressure) so that the first alloy layer 3 having a thickness of 7 μm or less is formed. Specific examples of the bonding conditions include a heating temperature of 600 to 700 ° C., a holding time of the heating temperature of 5 to 20 min, a rate of temperature increase from room temperature to the heating temperature of 5 to 50 ° C./min, and the first unbonded laminate. The pressure applied to the body 8 is 10 to 20 MPa.

  Next, as shown in FIG. 3, the Ti layer 4, the Al layer 6, the brazing material layer 7, the Ti layer 4 and the Al layer 6 of the first joined body 8 </ b> Z, and the Al layer 6 and the brazing material are adjacent to each other. The layers 7 are adjacent to each other and are simultaneously bonded in a laminated form by a discharge plasma sintering method. This process is referred to as a “second bonding process”. In this second bonding step, the Ti layer 4, the Al layer 6, and the brazing material layer 7 are formed so that the second alloy layer 5 having a thickness of 5 μm or less is formed at the bonding interface between the Ti layer 4 and the Al layer 6. It is particularly desirable to join by a discharge plasma sintering method.

  When the Ti layer 4, Al layer 6, and brazing filler metal layer 7 are simultaneously bonded by the discharge plasma sintering method in the second bonding step, first, as shown in FIG. The Al layer 6 and the brazing filler metal layer 7 are arranged in a laminated form. Thereby, the unbonded laminated body 9 of the Ti layer 4, the Al layer 6, and the brazing material layer 7 (for convenience of explanation, the unbonded laminated body 9 is referred to as “second unbonded laminated body 9”, the same applies hereinafter). The periphery is surrounded by the die 31. Next, the second unbonded laminate 9 is sandwiched between a pair of upper and lower punches 32, 32 in the thickness direction. Then, for example, in a vacuum atmosphere of 1 to 10 Pa or in an inert gas atmosphere such as nitrogen or argon, both the punches 32 and 32 pressurize the second unbonded laminate 9 in the thickness direction while The second unbonded laminated body 9 is heated by applying a pulse current between the punches 32 and 32 in a state in which energization between the punches 32 and 32 is ensured, whereby the Ti layer 4, the Al layer 6, and the brazing material layer are heated. 7 are joined simultaneously. In addition, the second alloy layer 5 is formed at the bonding interface between the Ti layer 4 and the Al layer 6 by this bonding. As described above, the second alloy layer 5 includes a Ti—Al-based alloy phase. In this joining, it is desirable to set the joining conditions (eg, heating temperature, holding time of heating temperature, heating rate, pressure) so that the second alloy layer 5 having a thickness of 5 μm or less is formed. Specific examples of this bonding condition include a heating temperature of 500 to 560 ° C., a holding time of the heating temperature of 5 to 20 min, a rate of temperature increase from room temperature to the heating temperature of 5 to 50 ° C./min, and the second unbonded laminate. The pressure applied to the body 9 is 10 to 20 MPa.

  Through the above steps, the laminated material 1A of the first embodiment is obtained.

  The insulating substrate 15 is manufactured using this laminated material 1A. The production method is exemplified as follows.

  As shown in FIG. 3, the laminated material 1A, the ceramic layer 10, and the metal base layer 12 are joined by brazing. Thereby, the insulating substrate 15 is obtained. Here, since the laminated material 1A includes the brazing material layer 7, the laminated material 1A and the ceramic layer 10 can be easily joined by using the brazing material layer 7 as the brazing material. In the present invention, the laminated material 1A, the ceramic layer 10, and the metal base layer 12 may be joined simultaneously by in-furnace brazing.

  In the insulating substrate 15 thus obtained, as shown in FIGS. 1 and 2, the heat radiating member 17 is joined to the lower surface of the metal base layer 12 by brazing or the like, and the semiconductor element 21 is formed on the surface 2 a of the Ni layer 2. Joined by soldering. Thereby, the semiconductor module 20 is obtained.

  The laminated material 1A and the manufacturing method thereof according to the first embodiment have the following advantages.

  Since the laminated material 1 </ b> A of the first embodiment includes the Ni layer 2, solderability is good. Therefore, the semiconductor element 21 can be reliably bonded to the surface 2a of the Ni layer 2 by soldering.

  Furthermore, since the Ti layer 4 is disposed between the Ni layer 2 and the Al layer 6, the following effects are obtained. That is, if the Ni layer 2 and the Al layer 6 are directly bonded without disposing the Ti layer 4 between the Ni layer 2 and the Al layer 6, the bonding interface between the Ni layer 2 and the Al layer 6 has a strength. Weak alloy layer is formed, and as a result, the alloy layer is likely to be cracked or peeled off due to thermal stress (thermal strain) generated with the cooling cycle. On the other hand, in the laminated material 1A of the first embodiment, since the Ti layer 4 is disposed between the Ni layer 2 and the Al layer 6, such a weak alloy layer is not formed. Thereby, the generation | occurrence | production of the crack and peeling in the joining interface of a laminated material by thermal stress (thermal distortion) can be prevented, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface 2a of the Ni layer 2 can be prevented.

  Moreover, the first alloy layer 3 is formed at the bonding interface between the Ni layer 2 and the Ti layer 4 by bonding the Ni layer 2 and the Ti layer 4 by the discharge plasma sintering method. The first alloy layer 3 includes a Ni—Ti superelastic alloy phase and adopts a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction. Therefore, the first alloy layer 3 plays a role of reliably relaxing and absorbing the thermal stress generated in the laminated material 1A and the insulating substrate 15.

  Here, specific examples of the thermal stress generated in the laminated material 1A and the insulating substrate 15 are as follows. That is, when the joining of the metal base layer 12 of the insulating substrate 15 and the heat dissipation member 17 is performed by brazing, for example, the temperature of the insulating substrate 15 rises from room temperature to about 600 ° C. during the brazing, and after brazing Return to room temperature. Further, when the semiconductor element 21 is joined to the surface 2a of the Ni layer 2 of the laminated material 1A by soldering, the temperature of the insulating substrate 15 rises from room temperature to about 300 ° C. and returns to room temperature after soldering. Furthermore, during the operation of the semiconductor module 20, the temperature of the semiconductor element 21 rises from room temperature to about 150 to 300 ° C., and returns to room temperature after the operation is stopped. Thermal stress (thermal distortion) is generated in the laminated material 1A and the insulating substrate 15 by such a cooling / heating cycle. However, in the laminated material 1 </ b> A and the insulating substrate 15 of the first embodiment, this thermal stress is relaxed and absorbed by the first alloy layer 3. Thereby, generation | occurrence | production of the crack and peeling in the joining interface of 1 A of laminated materials, and generation | occurrence | production of the deformation | transformation of the surface 2a of the Ni layer 2 can be prevented reliably.

  In addition, since the joining means for the Ni layer 2 and the Ti layer 4 and the joining means for the Ti layer 4, the Al layer 6, and the brazing material layer 7 are all the discharge plasma sintering method, each layer before and after the joining is obtained. It is possible to reduce the dimensional change. Thereby, the laminated material 1A having high dimensional accuracy can be obtained.

  In addition, as shown in FIG. 4, in the first bonding step, the first unbonded state in which the periphery of the first unbonded stacked body 8 of the Ni layer 2 and the Ti layer 4 is surrounded by the discharge plasma sintering die 31. Since the Ni layer 2 and the Ti layer 4 of the laminated body 8 are joined by the discharge plasma sintering method, the energization between the punches 32 and 32 can be reliably ensured, and stable temperature control can be performed. Can do. Thereby, this joining can be performed reliably. Similarly to this, as shown in FIG. 5, in the second bonding step, the second unbonded laminated body 9 of the Ti layer 4, the Al layer 6, and the brazing material layer 7 is surrounded by the die 31. 2 Since the Ti layer 4, the Al layer 6, and the brazing material layer 7 of the unbonded laminate 9 are bonded by the discharge plasma sintering method, the energization between the punches 32 and 32 can be reliably ensured, Thus, stable temperature control can be performed. Thereby, this joining can be performed reliably.

  Further, by adopting the discharge plasma sintering method as the joining means between the Ti layer 4 and the Al layer 6, the thick Al layer 6 and the Ti layer 4 can be compared with the case where the clad joining is adopted as the joining means. It becomes possible to join. Specifically, when clad bonding is employed as a bonding means between the Ti layer 4 and the Al layer 6 and the Ti layer 4 having a thickness of 100 μm or less is used, the thickness of the Ti layer 4 is required for stable bonding. Only the Al layer 6 having the same thickness as that of the Ti layer 4 can be bonded. On the other hand, when the discharge plasma sintering method is employed as the joining means, a thick Al layer 6 having a thickness of 0.1 to 2.0 mm can be joined to the Ti layer 4. Therefore, the Al layer 6 can function reliably as a wiring layer and a stress relaxation layer.

  Further, since the Al layer 6 and the brazing material layer 7 are joined, the brazing material layer 7 can be used as a brazing material when the laminated material 1A and the ceramic layer 10 are joined by brazing. Therefore, the laminated material 1A and the ceramic layer 10 can be easily joined.

  Furthermore, by simultaneously bonding the Ti layer 4, the Al layer 6 and the brazing material layer 7 by the discharge plasma sintering method, the laminated material 1A provided with the brazing material layer 7 can be obtained with high work efficiency.

  Here, in the laminated material 1A of the first embodiment, all the layers 2, 4, 6, and 7 have conductivity. Therefore, even if the discharge plasma sintering die 31 is not necessarily used, energization between the upper and lower punches 32 and 32 can be ensured, and joining by the discharge plasma sintering method can be performed. Below, some modifications of the manufacturing method of the laminated material 1A of the said 1st Embodiment including the joining method are demonstrated.

  FIG. 6 is a cross-sectional view showing a case where the Ni layer 2 and the Ti layer 4 are joined by the discharge plasma sintering method without using the die 31 in the first joining step.

  In the first bonding step shown in the figure, the periphery of the first unbonded stacked body 8 of the Ni layer 2 and the Ti layer 4 is not surrounded by a die. Next, the first unbonded laminate 8 is sandwiched between a pair of upper and lower punches 32 and 32 in the thickness direction. Then, in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen or argon, while pressing the first unbonded laminate 8 in the thickness direction with both punches 32, 32, between both punches 32, 32. The first unbonded laminate 8 is heated by applying a pulse current between the punches 32 and 32 in a state in which the energization is secured, and thereby the Ni layer 2 and the Ti layer 4 are bonded. Moreover, the 1st alloy layer 3 is formed in the joining interface of Ni layer 2 and Ti layer 4 by this joining. The joining conditions applied to this joining are the same as the joining conditions applied in the first joining step of the first embodiment.

  In the first bonding step shown in the figure, the first unbonded stacked body 8 of the Ni layer 2 and the Ti layer 4 is subjected to a discharge plasma sintering method without surrounding the first unbonded stacked body 8 with a die. Therefore, the setting work of these layers 2 and 4 and the taking-out work after joining can be easily performed at the time of joining by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about the discharge plasma sintering apparatus 30 can be aimed at.

  FIG. 7 is a cross-sectional view showing a case where the Ni layer 2 and the Ti layer 4 of each first unbonded laminate 8 are collectively bonded by the discharge plasma sintering method using the die 31 in the first bonding step. .

  In the first bonding step shown in the figure, a plurality of first unbonded laminates 8 of Ni layers 2 and Ti layers 4 are prepared. In the figure, the number of prepared first unbonded laminates 8 is, for example, three. In the present invention, the number of the first unbonded laminates 8 is not limited to three, but may be 2 to 40 or may exceed 40.

  Next, in the die 31, a plurality of first unbonded stacked bodies 8 are stacked between the first unbonded stacked bodies 8 and 8 adjacent to each other via the conductive release plate 35. That is, in the die 31, the plurality of first unbonded stacked bodies 8 are stacked such that the conductive release plate 35 is interposed between the two first unbonded stacked bodies 8, 8 adjacent to each other. . Thereby, the periphery of the plurality of first unbonded stacked bodies 8 is surrounded by the die 31. The conductive release plate 35 serves to prevent the first unbonded stacked bodies 8 and 8 adjacent to each other from being bonded to each other, and is not bonded to the first unbonded stacked body 8. . The conductive release plate 35 is preferably a plate having conductivity and heat resistance that does not melt at the time of joining. For example, the conductive release plate 35 is made of a carbon plate (including a graphite plate and a sheet). Next, the plurality of first unbonded stacked bodies 8 are collectively sandwiched between the pair of upper and lower punches 32 and 32 in the thickness direction. Then, in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen or argon, while pressing the plurality of first unbonded laminates 8 in the thickness direction with both punches 32, 32, both punches 32, A plurality of first unbonded stacked bodies 8 are heated by supplying a pulse current between both punches 32 and 32 in a state where energization between 32 is ensured, whereby the Ni layer 2 of each first unbonded stacked body 8 is heated. And Ti layer 4 are bonded together. Moreover, the 1st alloy layer 3 is formed in the joining interface of Ni layer 2 of each 1st unjoined laminated body 8 and Ti layer 4 by this joining (refer to Drawing 3). The joining conditions applied to this joining are the same as the joining conditions applied in the first joining step of the first embodiment.

  In the first bonding step shown in the figure, the Ni layer 2 and the Ti layer 4 of each first unbonded laminate 8 are bonded together by the discharge plasma sintering method. The first joined body 8Z can be manufactured in large quantities. Thereby, the manufacturing cost of 1 A of laminated materials can be reduced.

  FIG. 8 is a cross-sectional view showing a case where the Ni layer 2 and the Ti layer 4 of each first unbonded laminate 8 are collectively bonded by the discharge plasma sintering method without using the die 31 in the first bonding step. is there.

  In the first bonding step shown in the figure, a plurality of first unbonded laminates 8 of Ni layers 2 and Ti layers 4 are prepared. In the figure, the number of prepared first unbonded laminates 8 is, for example, three. In the present invention, the number of the first unbonded laminates 8 is not limited to three, but may be 2 to 40 or may exceed 40.

  Next, a plurality of first unbonded stacked bodies 8 are stacked via the conductive release plate 35 between the first unbonded stacked bodies 8 and 8 adjacent to each other. That is, the plurality of first unbonded stacked bodies 8 are stacked such that the conductive release plate 35 is interposed between the two first unbonded stacked bodies 8 and 8 adjacent to each other. At this time, the periphery of the plurality of first unbonded stacked bodies 8 is not surrounded by the die. Next, the plurality of first unbonded stacked bodies 8 are collectively sandwiched between the pair of upper and lower punches 32 and 32 in the thickness direction. Then, in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen or argon, while pressing the plurality of first unbonded laminates 8 in the thickness direction with both punches 32, 32, both punches 32, A plurality of first unbonded stacked bodies 8 are heated by supplying a pulse current between both punches 32 and 32 in a state where energization between 32 is ensured, whereby the Ni layer 2 of each first unbonded stacked body 8 is heated. And Ti layer 4 are bonded together. Moreover, the 1st alloy layer 3 is formed in the joining interface of Ni layer 2 of each 1st unjoined laminated body 8 and Ti layer 4 by this joining (refer to Drawing 3). The joining conditions applied to this joining are the same as the joining conditions applied in the first joining step of the first embodiment.

  In the first bonding step shown in the figure, the first unbonded stacked body 8 of the Ni layer 2 and the Ti layer 4 is subjected to a discharge plasma sintering method without surrounding the first unbonded stacked body 8 with a die. Therefore, the setting work of these layers 2 and 4 and the taking-out work after joining can be easily performed at the time of joining by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about the discharge plasma sintering apparatus 30 can be aimed at.

  Further, since the Ni layer 2 and the Ti layer 4 of each first unbonded laminate 8 are collectively bonded by the discharge plasma sintering method, a large amount of the first bonded body 8Z of the Ni layer 2 and the Ti layer 4 is formed. Can be manufactured. Thereby, the manufacturing cost of 1 A of laminated materials can be reduced.

  FIG. 9 is a cross-sectional view showing a case where the Ti layer 4, the Al layer 6, and the brazing material layer 7 of the first joined body 8Z are joined by the discharge plasma sintering method without using the die 31 in the second joining step. It is.

  In the second bonding step shown in the figure, the periphery of the second unbonded laminate 9 of the Ti layer 4, the Al layer 6, and the brazing material layer 7 is not surrounded by a die. Next, the second unbonded laminate 9 is sandwiched between a pair of upper and lower punches 32, 32 in the thickness direction. Then, in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen or argon, while pressing the second unbonded laminate 9 in the thickness direction with both punches 32 and 32, between both punches 32 and 32. The second unbonded laminate 9 is heated by applying a pulse current between the punches 32 and 32 in a state in which the energization is ensured, whereby the Ti layer 4, the Al layer 6 and the brazing material layer 7 are bonded simultaneously. To do. Moreover, the 2nd alloy layer 5 is formed in the joining interface of Ti layer 4 and Al layer 6 by this joining (refer to Drawing 3). The joining conditions applied to this joining are the same as the joining conditions applied in the second joining step of the first embodiment.

  In the second bonding step shown in the figure, the second unbonded stacked body 9 of the Ti layer 4, the Al layer 6 and the brazing filler metal layer 7 is not surrounded by the die. Since the joining is performed by the discharge plasma sintering method, the setting work of these layers 4, 6, and 7 and the taking-out work after joining can be easily performed at the time of joining by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about the discharge plasma sintering apparatus 30 can be aimed at.

  FIG. 10 shows a case where the Ti layer 4, the Al layer 6, and the brazing filler metal layer 7 of each second unbonded laminate 9 are collectively bonded by the discharge plasma sintering method using the die 31 in the second bonding step. It is sectional drawing shown.

  In the second bonding step shown in the figure, a plurality of second unbonded laminates 9 of Ti layer 4, Al layer 6 and brazing material layer 7 are prepared. In the figure, the number of prepared second unbonded laminates 9 is, for example, three. In the present invention, the number of the second unbonded laminates 9 is not limited to three, but may be 2 to 40 or may exceed 40.

  Next, in the die 31, a plurality of second unbonded stacked bodies 9 are stacked between the second unbonded stacked bodies 9 and 9 adjacent to each other via a conductive release plate 35. That is, in the die 31, the plurality of second unbonded stacked bodies 9 are stacked such that the conductive release plate 35 is interposed between the two adjacent second unbonded stacked bodies 9 and 9. . Thereby, the periphery of the plurality of second unbonded stacked bodies 9 is surrounded by the die 31. Next, the plurality of second unbonded laminated bodies 9 are collectively sandwiched between a pair of upper and lower punches 32 and 32 in the thickness direction. Then, in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen or argon, while energizing the plurality of second unbonded laminates with both punches in the thickness direction, energization between both punches was ensured. In this state, a plurality of second unbonded laminates 9 are heated by applying a pulse current between the punches 32, 32, whereby the Ti layer 4, Al layer 6 and brazing material of each second unbonded laminate 9 are heated. Layers 7 are bonded together at the same time. Moreover, the 2nd alloy layer 5 is formed in the joining interface of Ti layer 4 of each 2nd unjoined laminated body 9 and Al layer 6 by this joining (refer to Drawing 3). The joining conditions applied to this joining are the same as the joining conditions applied in the second joining step of the first embodiment.

  In the first bonding step shown in the figure, the Ti layer 4, the Al layer 6, and the brazing material layer 7 of each second unbonded stacked body 9 are simultaneously bonded together by the discharge plasma sintering method. 1A can be produced in large quantities. Thereby, the manufacturing cost of 1 A of laminated materials can be reduced.

  FIG. 11 shows that the Ti layer 4, the Al layer 6, and the brazing filler metal layer 7 of each second unbonded laminate 9 are simultaneously bonded together by the discharge plasma sintering method without using the die 31 in the second bonding step. It is sectional drawing which shows a case.

  In the second bonding step shown in the figure, a plurality of first unbonded laminates 9 of Ti layer 4, Al layer 6 and brazing material layer 7 are prepared. In the figure, the number of prepared second unbonded laminates 9 is, for example, three. In the present invention, the number of the second unbonded laminates 9 is not limited to three, but may be 2 to 40 or may exceed 40.

  Next, the plurality of second unbonded stacked bodies 9 are stacked via the conductive release plate 35 between the second unbonded stacked bodies 9 and 9 adjacent to each other. That is, the plurality of second unbonded stacked bodies 9 are stacked such that the conductive release plate 35 is interposed between the two second unbonded stacked bodies 9 and 9 adjacent to each other. At this time, the periphery of the plurality of second unbonded stacked bodies 9 is not surrounded by the die. Next, the plurality of second unbonded laminated bodies 9 are collectively sandwiched between a pair of upper and lower punches 32 and 32 in the thickness direction. Then, in a vacuum atmosphere or in an inert gas atmosphere such as nitrogen or argon, while pressing the plurality of second unbonded laminates 9 in the thickness direction with both punches 32, 32, both punches 32, A plurality of second unbonded laminates 9 are heated by applying a pulse current between both punches 32 and 32 in a state where energization between 32 is ensured, whereby the Ti layer 4 of each second unbonded laminate 9 is heated. The Al layer 6 and the brazing filler metal layer 7 are bonded together at the same time. Moreover, the 2nd alloy layer 5 is formed in the joining interface of Ti layer 4 of each 2nd unjoined laminated body 9 and Al layer 6 by this joining (refer to Drawing 3). The joining conditions applied to this joining are the same as the joining conditions applied in the second joining step of the first embodiment.

  In the second bonding step shown in the figure, the second unbonded stacked body 8 of the Ti layer 4, the Al layer 6 and the brazing filler metal layer 7 is not surrounded by the die. Since the joining is performed by the discharge plasma sintering method, the setting work of these layers 4, 6, and 7 and the taking-out work after joining can be easily performed at the time of joining by the discharge plasma sintering method. Thereby, joining work can be performed rapidly and the reduction of the installation cost about the discharge plasma sintering apparatus 30 can be aimed at.

  Furthermore, since the Ti layer 4, the Al layer 6, and the brazing material layer 7 of each second unbonded laminated body 9 are simultaneously bonded together by the discharge plasma sintering method, a large amount of the laminated material 1 </ b> A can be manufactured. . Thereby, the manufacturing cost of 1 A of laminated materials can be reduced.

  FIG. 12: is a schematic sectional drawing which shows an example of the manufacturing process of the laminated material 1B which concerns on 2nd Embodiment of this invention. In the figure, the same reference numerals are given to the same or corresponding components as those of the laminated material 1A of the first embodiment.

  The laminated material 1B of the second embodiment is obtained by removing the brazing material layer 7 from the laminated material 1A of the first embodiment. That is, the laminated material 1B includes the Ni layer 2, the Ti layer 4, and the Al layer 6, but does not include the brazing material layer 7. And this laminated material 1B is joined to the ceramic layer 10 by brazing on one side of the ceramic layer 10 in a laminated form. In this brazing, a brazing material layer 7 separate from the laminated material 1B is used as the brazing material.

  The manufacturing method of the laminated material 1B of the second embodiment is the same as the manufacturing method of the laminated material 1A of the first embodiment except that the brazing material layer 7 is not joined to the Al layer 6.

  Although several embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.

  Further, the present invention may be configured by combining the technical ideas applied in the first embodiment and the second embodiment.

  Some specific examples of the present invention are shown below. However, the present invention is not limited to these examples.

<Example 1>
In Example 1, the laminated material 1B of the second embodiment shown in FIG. 12 was manufactured.

  As the Ni layer 2, the Ti layer 4, and the Al layer 6, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 100 mm × 0.02 mm in thickness Ti layer 4: Pure Ti plate having a diameter of 100 mm × 0.1 mm in thickness Al layer 6: Pure Al plate having a diameter of 100 mm × thickness of 0.6 mm

  The purity of the Ni plate forming the Ni layer 2 is JIS (Japanese Industrial Standard). The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 6 is 4N (that is, 99.99% by mass).

  Next, in the first joining step, the Ni layer 2 and the Ti layer 4 were joined in a laminated manner by a discharge plasma sintering method using a graphite cylindrical die 31. That is, the Ni layer 2 and the Ti layer of the first unbonded stacked body 8 in a 3 Pa vacuum atmosphere in a state where the periphery of the first unbonded stacked body 8 of the Ni layer 2 and the Ti layer 4 is surrounded by the die 31. 4 were joined by the discharge plasma sintering method. Thereby, a first joined body 8Z of the Ni layer 2 and the Ti layer 4 was obtained. Also, by this bonding, a first alloy layer 3 having a thickness of 2 μm formed by alloying Ni of the Ni layer 2 and Ti of the Ti layer 4 was formed at the bonding interface between the Ni layer 2 and the Ti layer 4. The first alloy layer 3 includes a NiTi superelastic alloy phase and has a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction.

  In the first joining step, upper and lower punches 32 and 32 made of graphite having a diameter of 100 mm were used. The joining conditions applied in the first joining step are a heating temperature of 650 ° C., a heating temperature holding time of 5 minutes, a heating rate of 35 ° C./min, and a pressing force of 20 MPa.

  Next, in the second joining step, the Ti layer 4 and the Al layer 6 of the first joined body 8Z were joined in a stacked manner by a discharge plasma sintering method using a graphite cylindrical die 31. That is, the Ti layer 4 and the Al layer of the second unbonded laminate 8 in a 3 Pa vacuum atmosphere with the die 31 surrounding the second unbonded laminate 8 of the Ti layer 4 and the Al layer 6. 6 were joined by the discharge plasma sintering method. This obtained desired laminated material (thickness 0.72 mm) 1B. Further, by this bonding, a second alloy layer 5 having a thickness of 1 μm formed by alloying Ti of the Ti layer 4 and Al of the Al layer 6 was formed at the bonding interface between the Ti layer 4 and the Al layer 6. The second alloy layer 5 includes a TiAl alloy phase.

  In this second joining step, upper and lower punches 32, 32 made of graphite having a diameter of 100 mm were used. The joining conditions applied in the second joining step are a heating temperature of 530 ° C., a heating temperature holding time of 5 min, a heating rate of 35 ° C./min, and a pressure of 20 MPa. Before joining the Ti layer 4 and the Al layer 6, the surface of the Ti layer 4 to which the Al layer 6 is joined was brushed to remove the oxide film on the surface in advance.

  Next, the laminated material 1B thus obtained is cut into a size of 70 mm in length and 70 mm in width, and then the laminated material 1B, the brazing material layer 7, the ceramic layer 10, the brazing material layer 11, and the metal base layer 12 are obtained. They were joined together in a laminated form by brazing in the furnace. This process is called “brazing process”. Thereby, the insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 70 mm × width 70 mm × thickness 1 mm) as the ceramic layer 10 and a brazing material plate of Al-8 mass% Si as the brazing material layers 7 and 11 (length 70 mm × width 70 mm × A thickness of 0.04 mm) and a pure Al plate having a purity of 4N (length 70 mm × width 70 mm × thickness 0.6 mm) were used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm ² .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 2>
In the second example, the laminated material 1A of the first embodiment shown in FIG. 3 was manufactured.

  As the Ni layer 2, Ti layer 4, Al layer 6 and brazing material layer 7, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 100 mm × 0.02 mm in thickness Ti layer 4: Pure Ti plate having a diameter of 100 mm × 0.1 mm in thickness Al layer 6: Pure Al plate having a diameter of 100 mm × 0.6 mm in thickness Brazing material Layer 7: brazing material plate having a diameter of 100 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 6 is 4N. The composition of the brazing material plate forming the brazing material layer 7 is Al-8 mass% Si.

  Next, in the first joining step, as shown in FIG. 6, the Ni layer 2 and the Ti layer 4 were joined in a laminated form by a discharge plasma sintering method without using a discharge plasma sintering die. That is, the Ni layer 2 and the Ti layer 4 of the first unbonded laminate 8 in a 3 Pa vacuum atmosphere without surrounding the first unbonded laminate 8 of the Ni layer 2 and the Ti layer 4 with a die. Were joined by a discharge plasma sintering method. Thereby, a first joined body 8Z of the Ni layer 2 and the Ti layer 4 was obtained (see FIG. 3). Also, by this bonding, a first alloy layer 3 having a thickness of 2 μm formed by alloying Ni of the Ni layer 2 and Ti of the Ti layer 4 was formed at the bonding interface between the Ni layer 2 and the Ti layer 4. The first alloy layer 3 includes a NiTi superelastic alloy phase and has a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction.

  In the first joining step, upper and lower punches 32 and 32 made of graphite having a diameter of 100 mm were used. The joining conditions applied in the first joining step are a heating temperature of 650 ° C., a heating temperature holding time of 5 minutes, a heating rate of 35 ° C./min, and a pressing force of 20 MPa.

  Next, in the second bonding step, as shown in FIG. 9, the Ti layer 4, the Al layer 6, and the brazing material layer 7 of the first bonded body 8Z are laminated by a discharge plasma sintering method without using a die. At the same time. That is, the Ti layer of the second unbonded laminate 9 in a vacuum atmosphere of 3 Pa without surrounding the second unbonded laminate 9 of the Ti layer 4, the Al layer 6, and the brazing material layer 7 with a die. 4, the Al layer 6 and the brazing material layer 7 were joined together by the discharge plasma sintering method. Thereby, a desired laminated material (thickness 0.76 mm) 1A was obtained (see FIG. 3). Further, by this bonding, a second alloy layer 5 having a thickness of 1 μm formed by alloying Ti of the Ti layer 4 and Al of the Al layer 6 was formed at the bonding interface between the Ti layer 4 and the Al layer 6. The second alloy layer 5 includes a TiAl alloy phase.

  In this second joining step, upper and lower punches made of graphite having a diameter of 100 mm were used. The joining conditions applied in the second joining step are a heating temperature of 530 ° C., a heating temperature holding time of 5 min, a heating rate of 35 ° C./min, and a pressure of 20 MPa. Before joining the Ti layer 4 and the Al layer 6, the surface of the Ti layer 4 to which the Al layer 6 is joined was brushed to remove the oxide film on the surface in advance.

  Next, as shown in FIG. 3, the laminated material 1A thus obtained is cut into a size of 70 mm length × 70 mm width, and then the laminated material 1A, the ceramic layer 10, the brazing material layer 11, the metal base layer 12, Were simultaneously joined in a laminated form by brazing in a furnace [brazing step]. Thereby, the insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 70 mm × width 70 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 70 mm × width 70 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 70 mm × width 70 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm ² .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Example 3>
In the third example, the laminated material 1A of the first embodiment shown in FIG. 3 was manufactured.

  As the Ni layer 2, Ti layer 4, Al layer 6 and brazing material layer 7, the following disk-shaped plates were prepared.

Ni layer 2: Pure Ni plate having a diameter of 100 mm × 0.02 mm in thickness Ti layer 4: Pure Ti plate having a diameter of 100 mm × 0.1 mm in thickness Al layer 6: Pure Al plate having a diameter of 100 mm × thickness of 0.6 mm

  Brazing material layer 7: brazing material plate having a diameter of 100 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 6 is 4N. The composition of the brazing material plate forming the brazing material layer 7 is Al-8 mass% Si.

  Next, in the first bonding step, 30 first unbonded laminates 8 of the Ni layer 2 and the Ti layer 4 were prepared. And as shown in FIG. 8, these 1st unjoined laminated bodies 8 were laminated | stacked via the electroconductive release plate 35 between each 1st unjoined laminated bodies 8 and 8 adjacent to each other. The conductive release plate 35 is a disc-shaped carbon plate having a diameter of 100 mm and a thickness of 2 mm. Then, the Ni layer 2 and the Ti layer 4 of each first unbonded stacked body 8 were bonded together in a stacked manner by a discharge plasma sintering method without using a die. That is, the discharge plasma sintering of the Ni layer 2 and the Ti layer 4 of each first unbonded laminate 8 is performed in a vacuum atmosphere of 3 Pa without surrounding the first unbonded laminate 8 with a die. Bonded together by the method. Thereby, 30 first joined bodies 8Z of the Ni layer 2 and the Ti layer 4 were obtained. Also, by this bonding, the first alloy layer having a thickness of 2 μm formed by alloying Ni of the Ni layer 2 and Ti of the Ti layer 4 at the bonding interface between the Ni layer 2 and the Ti layer 4 of each first bonded body 8Z. 3 was formed. The first alloy layer 3 includes a NiTi superelastic alloy phase and has a gradient material structure in which the composition ratio of Ni and Ti gradually changes in the thickness direction.

  In the first joining step, upper and lower punches 32 and 32 made of graphite having a diameter of 100 mm were used. The joining conditions applied in the first joining step are a heating temperature of 650 ° C., a heating temperature holding time of 5 min, a temperature rising rate of 35 ° C./min, and a pressure of 20 MPa.

  Next, in the second bonding step, 30 second unbonded laminates 9 of the Ti layer 4, the Al layer 6, and the brazing material layer 7 of the first bonded body 8 </ b> Z were sequentially arranged. And as shown in FIG. 11, these 2nd unjoined laminated bodies 9 were laminated | stacked via the electroconductive release plate 35 between each 2nd unjoined laminated bodies 9 and 9 adjacent to each other. The conductive release plate 35 is a disc-shaped carbon plate having a diameter of 100 mm and a thickness of 2 mm. Then, the Ti layer 4, the Al layer 6, and the brazing filler metal layer 7 of each second unbonded laminated body 9 were simultaneously bonded together in a laminated form by a discharge plasma sintering method without using a die. That is, the Ti layer 4, the Al layer 6, and the brazing material layer 7 of each second unbonded stacked body 9 in a vacuum atmosphere of 3 Pa without surrounding the second unbonded stacked body 9 with a die. Were simultaneously bonded together by the discharge plasma sintering method. As a result, 30 desired laminated materials (thickness 0.76 mm) 1A were obtained. Further, by this bonding, the second alloy layer 5 having a thickness of 1 μm formed by alloying Ti of the Ti layer 4 and Al of the Al layer 6 is formed at the bonding interface between the Ti layer 4 and the Al layer 6 of each laminated material 1A. Been formed. The second alloy layer 5 includes a TiAl alloy phase.

  In this second joining step, upper and lower punches 32, 32 made of graphite having a diameter of 100 mm were used. The joining conditions applied in the second joining step are a heating temperature of 530 ° C., a heating temperature holding time of 5 minutes, a heating rate of 35 ° C./min, and a pressure of 20 MPa. Before joining the Ti layer 4 and the Al layer 6, the surface of the Ti layer 4 to which the Al layer 6 is joined was brushed to remove the oxide film on the surface.

  Next, one laminated material 1A arbitrarily selected from these laminated materials 1A is cut into a size of 70 mm long × 70 mm wide, and then laminated material 1A, ceramic layer 10, brazing material layer 11, and metal base. The layer 12 was simultaneously joined in a laminated form by brazing in the furnace [brazing step]. Thereby, the insulating substrate 15 was obtained.

In this brazing process, an AlN plate (length 70 mm × width 70 mm × thickness 1 mm) is used as the ceramic layer 10, and a brazing material plate of Al-8 mass% Si (length 70 mm × width 70 mm × thickness 0) is used as the brazing material layer 11. .04 mm) and a pure Al plate having a purity of 4N (length 70 mm × width 70 mm × thickness 0.6 mm) was used as the metal base layer 12. The brazing conditions applied in the brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm ² .

  Subsequently, when the thermal cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate 15 thus obtained, cracking and peeling at each bonding interface of the insulating substrate 15 and the Ni layer 2 of the insulating substrate 15 were obtained. No deformation of the surface 2a occurred.

<Comparative Example 1>
The following plates were prepared as the Ni layer 2, Ti layer 4, Al layer 6, AlN layer 10, metal base layer 12, and a plurality of brazing material layers, respectively.

Ni layer 2: pure Ni plate 70 mm long × 70 mm wide × 0.02 mm thick Ti layer 4: pure Ti plate 70 mm long × 70 mm wide × 0.1 mm thick Al layer 6: 70 mm long × 70 mm wide × thickness 0.6 mm pure Al plate AlN layer 10: 70 mm long × 70 mm wide × 1 mm thick AlN plate Metal base layer 12: 70 mm long × 70 mm wide × 0.6 mm thick pure Al plate Each brazing filler metal layer: 70 mm long X A brazing material plate having a width of 70 mm and a thickness of 0.04 mm.

  The purity of the Ni plate forming the Ni layer 2 is JIS1 type. The purity of the Ti plate forming the Ti layer 4 is JIS1 type. The purity of the Al plate forming the Al layer 6 is 4N. The purity of the Al plate forming the metal base layer 12 is 4N. The composition of the brazing material plate forming the brazing material layer is Al-8 mass% Si.

  Next, the Ni layer 2, the brazing material layer, the Ti layer 4, the brazing material layer, the Al layer 6, the brazing material layer, the AlN layer 10, the brazing material layer, and the metal base layer 12 were laminated in this order. These layers were simultaneously joined in a laminated form by brazing in the furnace [brazing step]. Thereby, an insulating substrate was obtained.

The brazing conditions applied in this brazing step are a heating temperature of 600 ° C., a heating temperature holding time of 15 min, and an applied load of 6 g / cm ² .

  In the insulating substrate thus obtained, the brazing material layer interposed at the bonding interface between the Ni layer 2 and the Ti layer 4 and the brazing material layer interposed at the bonding interface between the Ti layer 4 and the Al layer 6 are respectively brazed. Cracking occurred due to the thermal stress at the time.

  The present invention can be used for a laminated material for an insulating substrate and a manufacturing method thereof.

1A, 1B: Laminated material 2: Ni layer 3: First alloy layer 4: Ti layer 5: Second alloy layer 6: Al layer 7: Brazing material layer 8: First unjoined laminate 8Z: First joined body 9 : Second unbonded laminate 10: ceramic layer 12: metal base layer 15: insulating substrate 17: heat dissipation member 20: semiconductor module 21: semiconductor element 30: discharge plasma sintering device 31: die 32: punch 35: conductive separation Template

Claims (22)

A Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface, and a Ti layer formed of Ti or Ti alloy arranged in a stacked manner on one side of the Ni layer are formed by a discharge plasma sintering method. As it is joined
The Ti layer and an Al layer formed of Al or an Al alloy arranged in a stacked manner on the opposite side of the Ti layer from the Ni layer arrangement side are joined by a discharge plasma sintering method. A laminated material for an insulating substrate.   2. The laminated material for an insulating substrate according to claim 1, wherein the Al layer and a brazing material layer arranged in a laminated form on the side of the Al layer opposite to the Ti layer arranged side are joined by a discharge plasma sintering method.   3. The first alloy layer having a thickness of 7 μm or less formed by alloying Ni of the Ni layer and Ti of the Ti layer is formed at a bonding interface between the Ni layer and the Ti layer. Laminated material for insulating substrates.   The second alloy layer having a thickness of 5 μm or less formed by alloying Ti of the Ti layer and Al of the Al layer is formed at a bonding interface between the Ti layer and the Al layer. The laminated material for insulating substrates according to any one of the above.   The laminated material for an insulating substrate according to any one of claims 1 to 4, wherein the Al layer is formed of pure Al having a purity of 4N or higher. A Ni layer formed of Ni or Ni alloy having a semiconductor element bonded to the surface thereof, and a Ti layer formed of Ti or Ti alloy disposed in a stacked manner on one side of the Ni layer are formed by a discharge plasma sintering method. A first joining step for joining;
After the first bonding step, the Ti layer and an Al layer formed of Al or an Al alloy arranged in a stacked manner on the opposite side of the Ti layer from the Ni layer arrangement side are subjected to discharge plasma sintering. And a second bonding step for bonding by a method.   In the first bonding step, the Ni layer and the Ti layer are formed by alloying Ni of the Ni layer and Ti of the Ti layer at a bonding interface between these layers, and a first alloy layer having a thickness of 7 μm or less. The method for manufacturing a laminated material for an insulating substrate according to claim 6, wherein the bonding is performed by a discharge plasma sintering method so that a film is formed.   In the second bonding step, the Ti layer and the Al layer, and a second alloy layer having a thickness of 5 μm or less formed by alloying Ti of the Ti layer and Al of the Al layer at a bonding interface between these layers. The method for manufacturing a laminated material for an insulating substrate according to claim 6, wherein the bonding is performed by a discharge plasma sintering method so as to be formed.   The said 1st joining process WHEREIN: The said Ni layer and the said Ti layer are joined by the discharge plasma sintering method in the state which does not surround the circumference | surroundings of these layers with the cylindrical die | dye for discharge plasma sintering. The manufacturing method of the laminated material for insulating substrates in any one.   The said 2nd joining process WHEREIN: The said Ti layer and the said Al layer are joined by the discharge plasma sintering method in the state which does not surround the circumference | surroundings of these layers with the cylindrical die | dye for discharge plasma sintering. The manufacturing method of the laminated material for insulating substrates in any one. In the first joining step,
A plurality of first unbonded stacks of the Ni layer and the Ti layer are prepared, and the plurality of first unbonded stacks are interposed between the first unbonded stacks adjacent to each other via a conductive release plate. And laminated
Subsequently, the manufacturing method of the laminated material for insulating substrates in any one of Claims 6-8 which joins Ni layer and Ti layer of each said 1st unjoined laminated body collectively by a discharge plasma sintering method. In the first joining step,
A plurality of first unbonded stacks of the Ni layer and the Ti layer are prepared, and the plurality of first unbonded stacks are interposed between the first unbonded stacks adjacent to each other via a conductive release plate. And laminated
Next, the Ni layer and the Ti layer of each of the first unbonded laminates are collectively collected by the discharge plasma sintering method without surrounding the plurality of first unbonded laminates with the discharge plasma sintering cylindrical die. The manufacturing method of the laminated material for insulating substrates in any one of Claims 6-8 bonded by doing. In the second joining step,
A plurality of second unbonded stacks of the Ti layer and the Al layer are prepared, and the plurality of second unbonded stacks are interposed between the second unbonded stacks adjacent to each other via a conductive release plate. And laminated
Then, the Ti layer and the Al layer of each of the second unbonded stacked bodies are bonded together by a discharge plasma sintering method, wherein the laminated material for an insulating substrate according to any one of claims 6 to 8, 11 and 12 is used. Production method. In the second joining step,
A plurality of second unbonded stacks of the Ti layer and the Al layer are prepared, and the plurality of second unbonded stacks are interposed between the second unbonded stacks adjacent to each other via a conductive release plate. And laminated
Next, the Ti layer and the Al layer of each of the second unbonded laminates are collectively collected by a discharge plasma sintering method without surrounding the plurality of second unbonded laminates with a cylindrical die for discharge plasma sintering. The method for producing a laminated material for an insulating substrate according to any one of claims 6 to 8, 11 and 12, wherein the laminated material is joined.   In the second joining step, the Ti layer, the Al layer, and the brazing material layer arranged in a laminated form on the opposite side of the Al layer from the Ti layer arranging side are simultaneously joined by a discharge plasma sintering method. The manufacturing method of the laminated material for insulating substrates of Claim 6 or 7.   In the second joining step, the Ti layer, the Al layer, and the brazing material layer are alloyed with Ti of the Ti layer and Al of the Al layer at a joining interface between the Ti layer and the Al layer. The method for manufacturing a laminated material for an insulating substrate according to claim 15, wherein bonding is performed simultaneously by a discharge plasma sintering method so that a second alloy layer having a thickness of 5 μm or less is formed.   In the second bonding step, the Ti layer, the Al layer, and the brazing material layer are simultaneously bonded by a discharge plasma sintering method without surrounding the layers with a discharge plasma sintering cylindrical die. The manufacturing method of the laminated material for insulating substrates of Claim 15 or 16. In the second joining step,
A plurality of second unbonded stacked bodies of the Ti layer, the Al layer, and the brazing material layer are prepared, and the plurality of second unbonded stacked bodies are electrically conductive between the second unbonded stacked bodies adjacent to each other. Laminate through a release plate,
The method for producing a laminated material for an insulating substrate according to claim 15 or 16, wherein the Ti layer, the Al layer, and the brazing filler metal layer of each second unbonded laminated body are simultaneously joined together by a discharge plasma sintering method. In the second joining step,
A plurality of second unbonded stacked bodies of the Ti layer, the Al layer, and the brazing material layer are prepared, and the plurality of second unbonded stacked bodies are electrically conductive between the second unbonded stacked bodies adjacent to each other. Laminate through a release plate,
Next, the Ti layer, the Al layer, and the brazing material layer of each of the second unbonded laminates are subjected to discharge plasma sintering without surrounding the plurality of second unbonded laminates with a cylindrical die for discharge plasma sintering. The method for manufacturing a laminated material for an insulating substrate according to claim 15 or 16, wherein the bonding is performed simultaneously by a bonding method.   The method for manufacturing a laminated material for an insulating substrate according to any one of claims 6 to 19, wherein the Al layer is formed of pure Al having a purity of 4N or higher.   An insulating substrate comprising the laminated material according to claim 1.   6. A semiconductor module, wherein a semiconductor chip is joined to the surface of the Ni layer of the laminated material according to claim 1 by soldering.

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