CN1360341A - 采用锗或锑预无定形注入及清洗的钛硅化物方法 - Google Patents
采用锗或锑预无定形注入及清洗的钛硅化物方法 Download PDFInfo
- Publication number
- CN1360341A CN1360341A CN 00135750 CN00135750A CN1360341A CN 1360341 A CN1360341 A CN 1360341A CN 00135750 CN00135750 CN 00135750 CN 00135750 A CN00135750 A CN 00135750A CN 1360341 A CN1360341 A CN 1360341A
- Authority
- CN
- China
- Prior art keywords
- titanium
- silicide
- antimony
- liquid
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 26
- 238000002347 injection Methods 0.000 title claims abstract description 26
- 239000007924 injection Substances 0.000 title claims abstract description 26
- 229910052787 antimony Inorganic materials 0.000 title claims description 23
- 229910021341 titanium silicide Inorganic materials 0.000 title description 8
- 238000005406 washing Methods 0.000 title 1
- 239000010936 titanium Substances 0.000 claims abstract description 37
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 21
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000012546 transfer Methods 0.000 claims abstract description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 22
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 238000004151 rapid thermal annealing Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910021352 titanium disilicide Inorganic materials 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract description 3
- 229910008484 TiSi Inorganic materials 0.000 description 13
- 238000010899 nucleation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005354 coacervation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB001357506A CN1144266C (zh) | 2000-12-19 | 2000-12-19 | 采用锗或锑预无定形注入及清洗的钛硅化物方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB001357506A CN1144266C (zh) | 2000-12-19 | 2000-12-19 | 采用锗或锑预无定形注入及清洗的钛硅化物方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1360341A true CN1360341A (zh) | 2002-07-24 |
CN1144266C CN1144266C (zh) | 2004-03-31 |
Family
ID=4596844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001357506A Expired - Lifetime CN1144266C (zh) | 2000-12-19 | 2000-12-19 | 采用锗或锑预无定形注入及清洗的钛硅化物方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1144266C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109860024A (zh) * | 2019-01-04 | 2019-06-07 | 山东天岳先进材料科技有限公司 | 一种降低晶片表面颗粒度的清洁方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1296971C (zh) * | 2004-09-29 | 2007-01-24 | 中国科学院微电子研究所 | 一种适用于纳米器件制造的硅化物工艺 |
-
2000
- 2000-12-19 CN CNB001357506A patent/CN1144266C/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109860024A (zh) * | 2019-01-04 | 2019-06-07 | 山东天岳先进材料科技有限公司 | 一种降低晶片表面颗粒度的清洁方法 |
CN109860024B (zh) * | 2019-01-04 | 2022-07-08 | 山东天岳先进科技股份有限公司 | 一种降低晶片表面颗粒度的清洁方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1144266C (zh) | 2004-03-31 |
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SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130327 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INST OF MICROELECTRONICS, C. A. S Free format text: FORMER NAME: MICROELECTRONIC CENTER, CHINESE ACADEMY OF SCIENCES |
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CP01 | Change in the name or title of a patent holder |
Address after: Beijing City, Qi Jia Huo Zi 100029 Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: Beijing City, Qi Jia Huo Zi 100029 Patentee before: Insitute of microelectronics of the chinese academy of sciences |
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TR01 | Transfer of patent right |
Effective date of registration: 20130327 Address after: Beijing City, Qi Jia Huo Zi 100029 Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: Beijing City, Qi Jia Huo Zi 100029 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
C56 | Change in the name or address of the patentee |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER NAME: INST OF MICROELECTRONICS, C. A. S |
|
CP03 | Change of name, title or address |
Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: Beijing City, Qi Jia Huo Zi 100029 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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CX01 | Expiry of patent term |
Granted publication date: 20040331 |
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CX01 | Expiry of patent term |