CN1349376A - 蚀刻液及挠性配线板的制造方法 - Google Patents
蚀刻液及挠性配线板的制造方法 Download PDFInfo
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- CN1349376A CN1349376A CN01125466A CN01125466A CN1349376A CN 1349376 A CN1349376 A CN 1349376A CN 01125466 A CN01125466 A CN 01125466A CN 01125466 A CN01125466 A CN 01125466A CN 1349376 A CN1349376 A CN 1349376A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0166—Polymeric layer used for special processing, e.g. resist for etching insulating material or photoresist used as a mask during plasma etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0783—Using solvent, e.g. for cleaning; Regulating solvent content of pastes or coatings for adjusting the viscosity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
蚀刻液溶剂名 | 酰亚胺化率(%) | 液温度 | 蚀刻速度(分) | 外观 | |
实施例1 | 1,3丙二醇 | 60 | 65℃ | 2.2 | ○ |
实施例2 | 75℃ | 1.8 | ○ | ||
实施例3 | 80 | 65℃ | 8.2 | ○ | |
实施例4 | 75℃ | 4.1 | ○ | ||
实施例5 | 85℃ | 2.2 | ○ | ||
比较例1 | 100 | 85℃ | 13.0 | ○ | |
实施例6 | 1,4丁二醇 | 60 | 65℃ | 1.7 | ○ |
实施例7 | 75℃ | 1.2 | ○ | ||
实施例8 | 80 | 65℃ | 8.4 | ○ | |
实施例9 | 75℃ | 4.0 | ○ | ||
实施例10 | 85℃ | 22 | ○ | ||
比较例2 | 100 | 85℃ | 12.0 | ○ | |
比较例3 | 乙二醇 | 80 | 75℃ | 7.0 | × |
比较例4 | 100 | 85℃ | >25.0 | × |
酰亚胺化率(%) | 氯离子(ppm) | 铵离子(ppm) | 钾离子(ppm) | |
实施例2 | 60% | 3.2 | 3.5 | 0.3 |
实施例4 | 80% | 2.1 | 3.1 | 0.1 |
比较例14 | 约15% | 28.8 | 8.1 | 0.4 |
溶剂名 | 配合比率(重量%) | 水/KOH | 蚀刻速度(分) | 外观 | |||
溶剂 | 水 | KOH | |||||
实施例11 | 1,4丁二醇 | 3 | 46 | 51 | 0.90 | 5.0 | ○ |
实施例12 | 57 | 22 | 21 | 1.05 | 4.5 | ○ | |
实施例13 | 51 | 34 | 15 | 2.27 | 4.0 | ○ | |
实施例14 | 1,3丙二醇 | 15 | 40 | 45 | 0.89 | 4.1 | ○ |
实施例15 | 51 | 25 | 24 | 1.04 | 4.7 | ○ | |
实施例16 | 2,3丁二醇 | 15 | 40 | 45 | 0.89 | 4.5 | ○ |
实施例17 | 33 | 34 | 33 | 1.04 | 4.0 | ○ | |
实施例18 | 1,5戊二醇 | 13 | 50 | 37 | 1.35 | 4.9 | ○ |
实施例19 | 31 | 38 | 31 | 1.23 | 5.0 | ○ | |
实施例20 | 51 | 25 | 24 | 1.04 | 5.7 | ○ | |
比较例5 | 1,4丁二醇 | 3 | 82 | 15 | 5.47 | 10.5 | × |
比较例6 | 3 | 76 | 21 | 3.62 | 7.0 | × | |
比较例7 | 3 | 40 | 57 | 0.70 | >20 | - | |
比较例8 | 39 | 22 | 39 | 0.56 | >20 | - | |
比较例9 | 51 | 16 | 33 | 0.48 | >20 | - | |
比较例10 | 69 | 10 | 21 | 0.48 | >20 | - | |
比较例11 | 0 | 47 | 53 | 0.89 | 7.8 | × | |
比较例12 | 69 | 16 | 15 | 1.07 | 8.0 | × | |
比较例13 | 65 | 26 | 9 | 2.89 | 8.0 | × |
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000210918A JP3765970B2 (ja) | 2000-07-12 | 2000-07-12 | エッチング液及びフレキシブル配線板の製造方法 |
JP210918/00 | 2000-07-12 | ||
JP210918/2000 | 2000-07-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1349376A true CN1349376A (zh) | 2002-05-15 |
CN1203742C CN1203742C (zh) | 2005-05-25 |
Family
ID=18707112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011254661A Expired - Fee Related CN1203742C (zh) | 2000-07-12 | 2001-07-11 | 蚀刻液及挠性配线板的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7144817B2 (zh) |
JP (1) | JP3765970B2 (zh) |
KR (1) | KR100738854B1 (zh) |
CN (1) | CN1203742C (zh) |
TW (1) | TWI238185B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100571491C (zh) * | 2004-11-11 | 2009-12-16 | Ppg工业俄亥俄公司 | 具有改进的通路设计的单层或多层印刷电路板 |
CN101158052B (zh) * | 2006-09-07 | 2010-09-29 | 硅电子股份公司 | 用于半导体晶片的碱性蚀刻溶液和碱性蚀刻方法 |
CN102449070A (zh) * | 2009-06-09 | 2012-05-09 | 旭化成电子材料株式会社 | 树脂组合物、固化物和使用该固化物的电路基板 |
CN112912466A (zh) * | 2018-10-24 | 2021-06-04 | 三菱制纸株式会社 | 树脂组合物的蚀刻液及蚀刻方法 |
CN113736466A (zh) * | 2020-05-29 | 2021-12-03 | 新应材股份有限公司 | 蚀刻剂组合物、增粘剂、碱溶液、移除聚酰亚胺的方法以及蚀刻工艺 |
US11851597B2 (en) | 2020-05-29 | 2023-12-26 | Echem Solutions Corp. | Etchant composition, tackifier, alkaline solution, method of removing polyimide and etching process |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3765970B2 (ja) * | 2000-07-12 | 2006-04-12 | ソニーケミカル株式会社 | エッチング液及びフレキシブル配線板の製造方法 |
JP2004186324A (ja) * | 2002-12-02 | 2004-07-02 | Sony Chem Corp | フレキシブル配線回路基板の製造方法 |
EP1998602B1 (en) * | 2007-03-29 | 2014-03-05 | Alpha Metals, Inc. | Method of manufacturing electrical contacts |
TWI521016B (zh) | 2012-07-18 | 2016-02-11 | 財團法人工業技術研究院 | 蝕刻含聚亞醯胺之膜層的方法 |
KR102468776B1 (ko) | 2015-09-21 | 2022-11-22 | 삼성전자주식회사 | 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
JP6855804B2 (ja) * | 2017-01-17 | 2021-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN112770545A (zh) * | 2020-12-29 | 2021-05-07 | 博罗县精汇电子科技有限公司 | 一种内层软板覆盖膜反贴合方法 |
KR102672622B1 (ko) * | 2021-11-29 | 2024-06-07 | (주)풍원 | 폴리이미드 식각액 조성물 |
Family Cites Families (23)
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JPS56130318A (en) * | 1980-03-19 | 1981-10-13 | Ube Ind Ltd | Preparation of polyimide film |
US4369090A (en) * | 1980-11-06 | 1983-01-18 | Texas Instruments Incorporated | Process for etching sloped vias in polyimide insulators |
US4426253A (en) | 1981-12-03 | 1984-01-17 | E. I. Du Pont De Nemours & Co. | High speed etching of polyimide film |
US4652393A (en) * | 1983-09-02 | 1987-03-24 | Research Chemical | Coating remover and wood restorative compositions and methods of using same |
US5004777A (en) * | 1985-08-27 | 1991-04-02 | Rohm And Haas Company | Imide polymers |
US5322976A (en) * | 1987-02-24 | 1994-06-21 | Polyonics Corporation | Process for forming polyimide-metal laminates |
DE3872799T2 (de) * | 1987-08-31 | 1993-03-04 | Sharp Kk | Verwendung eines polyimidkationenaustauscherharzes. |
JPH0420541A (ja) * | 1990-05-16 | 1992-01-24 | Sumitomo Metal Mining Co Ltd | ポリイミドフィルムのエッチング方法 |
US5441770A (en) * | 1990-05-18 | 1995-08-15 | Shipley Company Inc. | Conditioning process for electroless plating of polyetherimides |
JPH05202206A (ja) * | 1991-10-03 | 1993-08-10 | Mitsubishi Shindoh Co Ltd | ポリイミド樹脂のエッチング液およびエッチング方法 |
JP3186834B2 (ja) * | 1992-04-28 | 2001-07-11 | 住友金属鉱山株式会社 | ポリイミド樹脂溶解用エッチング液およびそれを使用したスルーホールのエッチング加工方法 |
JPH06234870A (ja) * | 1993-02-09 | 1994-08-23 | Central Glass Co Ltd | ポリイミドのエッチング液およびその使用方法 |
US5554684A (en) | 1993-10-12 | 1996-09-10 | Occidental Chemical Corporation | Forming polyimide coating by screen printing |
US5441815A (en) * | 1994-08-29 | 1995-08-15 | Industrial Technology Research Institute | Process for producing easily removable polyimide resin film |
US5854376A (en) * | 1995-03-09 | 1998-12-29 | Sekisui Kaseihin Kogyo Kabushiki Kaisha | Aliphatic ester-amide copolymer resins |
JP3286115B2 (ja) * | 1995-06-01 | 2002-05-27 | 日立化成工業株式会社 | エポキシ樹脂硬化物のエッチング液 |
JP3624967B2 (ja) * | 1995-06-01 | 2005-03-02 | 日立化成工業株式会社 | 多層プリント配線板の製造方法 |
US5783495A (en) * | 1995-11-13 | 1998-07-21 | Micron Technology, Inc. | Method of wafer cleaning, and system and cleaning solution regarding same |
US6218022B1 (en) | 1996-09-20 | 2001-04-17 | Toray Engineering Co., Ltd. | Resin etching solution and process for etching polyimide resins |
JPH11274687A (ja) * | 1998-03-20 | 1999-10-08 | Sony Chem Corp | フレキシブルプリント配線板の製造方法 |
US6355357B1 (en) | 1998-12-21 | 2002-03-12 | Sony Chemicals Corp. | Flexible printed board, polyamic acid and polyamic acid varnish containing same |
US6358670B1 (en) * | 1999-12-28 | 2002-03-19 | Electron Vision Corporation | Enhancement of photoresist plasma etch resistance via electron beam surface cure |
JP3765970B2 (ja) * | 2000-07-12 | 2006-04-12 | ソニーケミカル株式会社 | エッチング液及びフレキシブル配線板の製造方法 |
-
2000
- 2000-07-12 JP JP2000210918A patent/JP3765970B2/ja not_active Expired - Fee Related
-
2001
- 2001-07-11 CN CNB011254661A patent/CN1203742C/zh not_active Expired - Fee Related
- 2001-07-11 TW TW090116940A patent/TWI238185B/zh not_active IP Right Cessation
- 2001-07-12 KR KR1020010041807A patent/KR100738854B1/ko not_active IP Right Cessation
- 2001-07-12 US US09/905,052 patent/US7144817B2/en not_active Expired - Fee Related
-
2006
- 2006-10-30 US US11/590,611 patent/US20070039921A1/en not_active Abandoned
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100571491C (zh) * | 2004-11-11 | 2009-12-16 | Ppg工业俄亥俄公司 | 具有改进的通路设计的单层或多层印刷电路板 |
CN101158052B (zh) * | 2006-09-07 | 2010-09-29 | 硅电子股份公司 | 用于半导体晶片的碱性蚀刻溶液和碱性蚀刻方法 |
CN102449070A (zh) * | 2009-06-09 | 2012-05-09 | 旭化成电子材料株式会社 | 树脂组合物、固化物和使用该固化物的电路基板 |
CN102449070B (zh) * | 2009-06-09 | 2014-01-22 | 旭化成电子材料株式会社 | 树脂组合物、固化物和使用该固化物的电路基板 |
CN112912466A (zh) * | 2018-10-24 | 2021-06-04 | 三菱制纸株式会社 | 树脂组合物的蚀刻液及蚀刻方法 |
CN113736466A (zh) * | 2020-05-29 | 2021-12-03 | 新应材股份有限公司 | 蚀刻剂组合物、增粘剂、碱溶液、移除聚酰亚胺的方法以及蚀刻工艺 |
US11851597B2 (en) | 2020-05-29 | 2023-12-26 | Echem Solutions Corp. | Etchant composition, tackifier, alkaline solution, method of removing polyimide and etching process |
Also Published As
Publication number | Publication date |
---|---|
JP3765970B2 (ja) | 2006-04-12 |
KR20020006485A (ko) | 2002-01-19 |
US20020030178A1 (en) | 2002-03-14 |
US7144817B2 (en) | 2006-12-05 |
TWI238185B (en) | 2005-08-21 |
US20070039921A1 (en) | 2007-02-22 |
CN1203742C (zh) | 2005-05-25 |
JP2002026485A (ja) | 2002-01-25 |
KR100738854B1 (ko) | 2007-07-12 |
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