CN1327610A - 真空场效应器件及其制作工艺 - Google Patents
真空场效应器件及其制作工艺 Download PDFInfo
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- CN1327610A CN1327610A CN00801522A CN00801522A CN1327610A CN 1327610 A CN1327610 A CN 1327610A CN 00801522 A CN00801522 A CN 00801522A CN 00801522 A CN00801522 A CN 00801522A CN 1327610 A CN1327610 A CN 1327610A
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- vacuum
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- insulating barrier
- oxide
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- 239000010410 layer Substances 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 30
- 229910052723 transition metal Inorganic materials 0.000 claims description 29
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 16
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 16
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
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- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 9
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- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 7
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- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 7
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J21/00—Vacuum tubes
- H01J21/02—Tubes with a single discharge path
- H01J21/06—Tubes with a single discharge path having electrostatic control means only
- H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
- H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14557099P | 1999-07-26 | 1999-07-26 | |
| US60/145,570 | 1999-07-26 | ||
| US47778899A | 1999-12-31 | 1999-12-31 | |
| US47698499A | 1999-12-31 | 1999-12-31 | |
| US09/477,788 | 1999-12-31 | ||
| US09/476,984 | 1999-12-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1327610A true CN1327610A (zh) | 2001-12-19 |
Family
ID=27386281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00801522A Pending CN1327610A (zh) | 1999-07-26 | 2000-07-25 | 真空场效应器件及其制作工艺 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1116256A1 (de) |
| JP (1) | JP2003505844A (de) |
| KR (1) | KR20010075312A (de) |
| CN (1) | CN1327610A (de) |
| CA (1) | CA2345629A1 (de) |
| WO (1) | WO2001008193A1 (de) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101086940B (zh) * | 2006-06-09 | 2011-06-22 | 清华大学 | 场发射阴极装置的制造方法 |
| CN104217909A (zh) * | 2013-05-31 | 2014-12-17 | 意法半导体股份有限公司 | 集成真空微电子器件及其制造方法 |
| US9496392B2 (en) | 2014-03-31 | 2016-11-15 | Stmicroelectronics S.R.L. | Integrated vacuum microelectronic structure and manufacturing method thereof |
| CN106571367A (zh) * | 2015-10-12 | 2017-04-19 | 上海新昇半导体科技有限公司 | 真空管闪存结构及其制造方法 |
| WO2017190511A1 (zh) * | 2016-05-04 | 2017-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN107346720A (zh) * | 2016-05-04 | 2017-11-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN108242466A (zh) * | 2016-12-26 | 2018-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN110246889A (zh) * | 2019-05-10 | 2019-09-17 | 西安交通大学 | 一种双栅型真空场发射三极管结构及其制作方法 |
| CN110767519A (zh) * | 2019-10-21 | 2020-02-07 | 中国电子科技集团公司第十二研究所 | 一种场发射电子源结构及其形成方法、电子源、微波管 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002367711A1 (en) | 2001-06-14 | 2003-10-20 | Hyperion Catalysis International, Inc. | Field emission devices using modified carbon nanotubes |
| US7341498B2 (en) | 2001-06-14 | 2008-03-11 | Hyperion Catalysis International, Inc. | Method of irradiating field emission cathode having nanotubes |
| US6911767B2 (en) | 2001-06-14 | 2005-06-28 | Hyperion Catalysis International, Inc. | Field emission devices using ion bombarded carbon nanotubes |
| JP2003308798A (ja) | 2002-04-17 | 2003-10-31 | Toshiba Corp | 画像表示装置および画像表示装置の製造方法 |
| KR100880562B1 (ko) | 2007-07-09 | 2009-01-30 | (주)제이디에이테크놀로지 | 진공 채널 트랜지스터 및 전계 방출형 평판 표시 장치 |
| WO2012177900A1 (en) | 2011-06-22 | 2012-12-27 | Research Triangle Institute, International | Bipolar microelectronic device |
| WO2013024386A2 (en) * | 2011-08-16 | 2013-02-21 | 0Ec Sa | System for a contactless control of a field effect transistor |
| CN104143513B (zh) * | 2013-05-09 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 纳米真空场效应电子管及其形成方法 |
| WO2016182080A1 (ja) * | 2015-05-14 | 2016-11-17 | 国立大学法人山口大学 | 真空チャネルトランジスタおよびその製造方法 |
| BR112018070424B1 (pt) | 2016-04-06 | 2022-08-30 | Amcor Rigid Plastics Usa, Llc | Métodos de formação de uma pré-forma |
| RU2703292C1 (ru) * | 2019-03-26 | 2019-10-16 | Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") | Способ изготовления катодно-сеточного узла с углеродными автоэмиттерами |
| CN111613662B (zh) * | 2020-05-27 | 2021-06-11 | 东北大学 | 偏压诱导共线反铁磁材料产生自旋极化电流的调控方法 |
| JP6818931B1 (ja) * | 2020-09-10 | 2021-01-27 | 善文 安藤 | 真空チャネル電界効果トランジスタ、その製造方法及び半導体装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2635913B1 (fr) * | 1988-08-31 | 1990-11-09 | Saint Louis Inst | Diode a emission de champ |
| JPH0340332A (ja) * | 1989-07-07 | 1991-02-21 | Matsushita Electric Ind Co Ltd | 電界放出型スウィチング素子およびその製造方法 |
| JP2574500B2 (ja) * | 1990-03-01 | 1997-01-22 | 松下電器産業株式会社 | プレーナ型冷陰極の製造方法 |
| DE4010909A1 (de) * | 1990-04-04 | 1991-10-10 | Siemens Ag | Diode |
| US5289086A (en) * | 1992-05-04 | 1994-02-22 | Motorola, Inc. | Electron device employing a diamond film electron source |
| US5534743A (en) * | 1993-03-11 | 1996-07-09 | Fed Corporation | Field emission display devices, and field emission electron beam source and isolation structure components therefor |
| US5445550A (en) * | 1993-12-22 | 1995-08-29 | Xie; Chenggang | Lateral field emitter device and method of manufacturing same |
| US5442193A (en) * | 1994-02-22 | 1995-08-15 | Motorola | Microelectronic field emission device with breakdown inhibiting insulated gate electrode |
| US5629580A (en) * | 1994-10-28 | 1997-05-13 | International Business Machines Corporation | Lateral field emission devices for display elements and methods of fabrication |
| CA2219254A1 (en) * | 1995-05-08 | 1996-11-14 | Advanced Vision Technologies, Inc. | Field emission display cell structure and fabrication process |
| US5644188A (en) * | 1995-05-08 | 1997-07-01 | Advanced Vision Technologies, Inc. | Field emission display cell structure |
| US5604399A (en) * | 1995-06-06 | 1997-02-18 | International Business Machines Corporation | Optimal gate control design and fabrication method for lateral field emission devices |
| AU6273396A (en) * | 1995-06-13 | 1997-01-09 | Advanced Vision Technologies, Inc. | Laminar composite lateral field-emission cathode and fabrica tion process |
| WO1997002586A1 (en) * | 1995-07-05 | 1997-01-23 | Advanced Vision Technologies, Inc. | Direct electron injection field-emission display device and fabrication process |
| AU6850496A (en) * | 1995-09-06 | 1997-03-27 | Advanced Vision Technologies, Inc. | High-frequency field-emission device and fabrication process |
| KR20010032876A (ko) * | 1998-02-09 | 2001-04-25 | 어드밴스드 비젼 테크놀러지스 인코포레이티드 | 제한된 전자 필드 방출 소자 및 제작 공정 |
| CN1128461C (zh) * | 1998-03-21 | 2003-11-19 | 韩国科学技术院 | 双板型扁平场发射显示器 |
| WO1999049520A1 (en) * | 1998-03-25 | 1999-09-30 | Korea Advanced Institute Of Science & Technology | Vacuum field transistor |
-
2000
- 2000-07-25 EP EP00948950A patent/EP1116256A1/de not_active Withdrawn
- 2000-07-25 JP JP2001512614A patent/JP2003505844A/ja active Pending
- 2000-07-25 CN CN00801522A patent/CN1327610A/zh active Pending
- 2000-07-25 CA CA002345629A patent/CA2345629A1/en not_active Abandoned
- 2000-07-25 KR KR1020017003711A patent/KR20010075312A/ko not_active Application Discontinuation
- 2000-07-25 WO PCT/US2000/020230 patent/WO2001008193A1/en not_active Application Discontinuation
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| CN101086940B (zh) * | 2006-06-09 | 2011-06-22 | 清华大学 | 场发射阴极装置的制造方法 |
| CN104217909A (zh) * | 2013-05-31 | 2014-12-17 | 意法半导体股份有限公司 | 集成真空微电子器件及其制造方法 |
| US9508520B2 (en) | 2013-05-31 | 2016-11-29 | Stmicroelectronics S.R.L. | Integrated vacuum microelectronic device and fabrication method thereof |
| CN104217909B (zh) * | 2013-05-31 | 2017-05-17 | 意法半导体股份有限公司 | 集成真空微电子器件及其制造方法 |
| US9865421B2 (en) | 2014-03-31 | 2018-01-09 | Stmicroelectronics S.R.L. | Integrated vacuum microelectronic structure and manufacturing method thereof |
| US9496392B2 (en) | 2014-03-31 | 2016-11-15 | Stmicroelectronics S.R.L. | Integrated vacuum microelectronic structure and manufacturing method thereof |
| CN106571367A (zh) * | 2015-10-12 | 2017-04-19 | 上海新昇半导体科技有限公司 | 真空管闪存结构及其制造方法 |
| WO2017190511A1 (zh) * | 2016-05-04 | 2017-11-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN107346720A (zh) * | 2016-05-04 | 2017-11-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN107346720B (zh) * | 2016-05-04 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN108242466A (zh) * | 2016-12-26 | 2018-07-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN108242466B (zh) * | 2016-12-26 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
| CN110246889A (zh) * | 2019-05-10 | 2019-09-17 | 西安交通大学 | 一种双栅型真空场发射三极管结构及其制作方法 |
| CN110767519A (zh) * | 2019-10-21 | 2020-02-07 | 中国电子科技集团公司第十二研究所 | 一种场发射电子源结构及其形成方法、电子源、微波管 |
| CN110767519B (zh) * | 2019-10-21 | 2022-03-04 | 中国电子科技集团公司第十二研究所 | 一种场发射电子源结构及其形成方法、电子源、微波管 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003505844A (ja) | 2003-02-12 |
| EP1116256A1 (de) | 2001-07-18 |
| WO2001008193A1 (en) | 2001-02-01 |
| CA2345629A1 (en) | 2001-02-01 |
| KR20010075312A (ko) | 2001-08-09 |
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