CN1321054C - Preparation method of silicon-based micro mechanical photomodulator chip - Google Patents
Preparation method of silicon-based micro mechanical photomodulator chip Download PDFInfo
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- CN1321054C CN1321054C CNB2004100257892A CN200410025789A CN1321054C CN 1321054 C CN1321054 C CN 1321054C CN B2004100257892 A CNB2004100257892 A CN B2004100257892A CN 200410025789 A CN200410025789 A CN 200410025789A CN 1321054 C CN1321054 C CN 1321054C
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Abstract
The present invention relates to a preparing method for silicon base micro-machinery optical modulator chips, which comprises the steps: preparing silicon chips and diffusing phosphorus; preparing sacrificial layer silicon dioxide films; preparing silicon nitride films; steaming aluminium films; etching negative photoresist by light and corroding the aluminium films; etching the silicon nitride films by reactive ions; removing the aluminium films; corroding the sacrificial layer silicon dioxide films; etching positive photoresist by light; preparing compound metal films; preparing electrodes; etching the negative photoresist by light; corroding the sacrificial layer silicon dioxide films and obtaining suspending cavities; removing photoresist by the reactive ions. The present invention has the advantages of mature technique, low cost, etc. The silicon base micro-machinery optical modulator chips prepared by the method of the present invention are key elements in optical fiber-user communication systems.
Description
Technical field
The present invention relates to a kind of silicon-base micro-mechanical optical modulator chip production method, belong to the technical field that micro mechanical device is made.
Background technology
Along with the continuous development of information technology, the particularly propelling of all optical network technology, Fiber to the home, and (FTTH) will progressively realize.Optical modulator is one of Primary Component of optical communication field.Through years of development, polytype optical modulation device has appearred in optical communication system.The modulation rate of these devices is all very high, is generally per second 10
9Bit, and costing an arm and a leg is to individual consumers such as family and offices and be not suitable for.The information content that these users need upload is generally little, and what need is cheap, the optical modulator of speed moderate (as the megabits per second magnitude).The micromechanics optical modulator satisfies the desirable device of above-mentioned requirements just.In the optical modulator of background technology, having a kind of is the silicon-base micro-mechanical optical modulator.Up to now, the development of relevant silicon-base micro-mechanical optical modulator report is also few.It is the micromechanics optical modulator of suspension film with the polysilicon that the microtechnology research institute of Sweden Neuchatel university reported a kind of in nineteen ninety-five, but the operating voltage of this modulator needs 90 volts, is difficult to use.Australia Sydney university applicating physical system was also once reported a kind of silicon-base micro-mechanical optical modulator, though better performances needs repeatedly ion implantation technique, complicated process of preparation, cost of manufacture are also very high.
Summary of the invention
Although now had the optical modulation device of multiple maturation to be applied in various types of optical fiber telecommunications systems, but appearance along with Fiber to the home technology, market is just pressing for a kind of can manufacture, moderate cost, and the while can be satisfied the optical modulation device of general performance requirement.The present invention aims to provide a kind of silicon-base micro-mechanical optical modulator chip production method.It is low that this method has a production cost, the advantage that the silicon-base micro-mechanical optical modulator chip modulation electric of technical maturity and preparation is forced down.
Technical scheme of the present invention is characterised in that this chip production method comprises 14 processing steps: silicon chip is prepared and the phosphorus diffusion; Preparation sacrifice layer silica membrane; The preparation silicon nitride film; The evaporation of aluminum film; Negative glue photoetching is also corroded the aluminium film; The reactive ion etching silicon nitride film; Remove the aluminium film; Corrosion sacrifice layer silica membrane; Positive glue photoetching; The preparation composite metal membrane; Finish electrode preparation; Negative glue photoetching; The corrode silicon dioxide sacrifice layer obtains the chamber that suspends; Reactive ion removes photoresist.
Now be described with reference to the accompanying drawings technical scheme of the present invention.A kind of silicon-base micro-mechanical optical modulator chip production method is characterized in that operating procedure:
First step silicon chip is prepared and the phosphorus diffusion
Select for use n type silicon to do substrate 6, the thickness of substrate 6 and resistivity distribution are 350 microns and 50 ohmcms, with standard technology substrate 6 are cleaned and oven dry; Carry out phosphorus diffusion, process conditions: 1080 ℃ of furnace temperature, diffuse source POCL with the diffusion technique of standard
3(0 ℃), phosphorus source are respectively the N of 160 ml/min and 35 ml/min by flow
2And O
2Carry and enter pipeline, flow is the N of 300 ml/min
2Make protection gas and directly enter pipeline, carry out the phosphorus diffusion after system is saturated, be 30 minutes diffusion time, the square resistance R of the thin layer that diffusion obtains
≤ 5 ohm/;
Second step preparation sacrifice layer silica membrane 7
With the tetraethoxysilance is that reaction source is used low pressure chemical vapor deposition technology deposition silicon dioxide film 7 down in oxygen atmosphere and at 600 ℃, and the thickness of this film is 1 micron;
The 3rd step preparation silicon nitride film 8
With ammonia and silane is that reaction source prepares silicon nitride film 8 with low pressure chemical vapor deposition technology down at 900 ℃, and the thickness of this film is 0.2 micron;
The 4th step evaporation of aluminum film 9
With vacuum evaporation technology evaporation aluminium film 9, the thickness of this aluminium film is 1 micron;
The negative glue photoetching of the 5th step is also corroded aluminium film 9
With negative glue photoetching, obtain the figure that silicon nitride film 8 needs, through phosphoric acid corrosion, make aluminium film 9 become the aluminium film identical with the required figure of structure;
Six-step process ion etching silicon nitride film 8
Under 9 protections of aluminium film, with the sulfur hexafluoride is source of the gas, with reactive ion etching silicon nitride film 8, silicon nitride film 8 is become and the identical silicon nitride film of the required figure of structure, the diameter of the middle circular portion of silicon nitride film 8 is 38 microns, and the length of four cantilever beams of silicon nitride film 8 and width are respectively 25 microns and 12 microns;
The 7th step was removed aluminium film 9
With 80 ℃ phosphoric acid the aluminium film 9 on surface is eroded fully;
The 8th step corrosion sacrifice layer silica membrane 7
With the sacrifice layer silica membrane 7 at buffered hydrofluoric acid solution erosion removal contact hole 13 places and device architecture place, sacrifice layer silica membrane 7 is become and the identical silica membrane of the required figure of structure, the prescription of buffered hydrofluoric acid solution is HF: NH
4F: H
2O=3 volume: 6 volumes: 9 volumes;
The 9th positive glue photoetching of step
Make the figure of metal electrode by lithography with positive glue 14, the figure that does not have positive glue 14 parts is exactly the figure of final metal electrode;
The tenth step preparation composite metal membrane 15
Prepare titanium, platinum, golden composite metal membrane 15 with magnetron sputtering method, wherein, ground floor is a titanium film, and the thickness of titanium film is 0.02 micron, and the second layer is a platinum film, and the thickness of platinum film is 0.1 micron, and the 3rd layer is golden film, and the thickness of golden film is 0.2 micron;
The 11 step was finished electrode preparation
The positive glue 14 of the 9th step photoetching is come along together with the composite metal membrane on it 15 and removes in acetone with ultrasonic wave, obtain top electrode 16 and bottom electrode 5;
The negative glue photoetching of the 12 step
As protective layer 17, etch pit is exposed in photoetching with negative glue, the protection remainder;
The 13 step corrosion sacrifice layer silica 7 obtains the chamber that suspends
Under 38 ℃ temperature conditions, corrode sacrifice layer silica 7 with hydrofluoric acid cushioning liquid, remove sacrifice layer silica 7, discharge device architecture, obtain the chamber that suspends, put into ethanolic solution after the cleaning and dewater, drying, the prescription of hydrofluoric acid cushioning liquid is HF: NH
4F: H
2O=3 volume: 6 volumes: 9 volumes;
The tenth four-step reaction ion removes photoresist
Remove surperficial protective layer 17 with the reactive ion method, obtain complete silicon-base micro-mechanical optical modulator chip, wherein the diameter of optical window 3 is 18 microns.
Whole technology preparation process is shown in Fig. 1～14.Figure 16 is the floor map of device architecture, and Figure 15 is along the profile of diagonal in the schematic diagram.
The present invention has following outstanding advantage:
1. employing silicon technology, technical maturity.
2. cost is low, is suitable for producing in batches.
3. Zhi Bei silicon-base micro-mechanical optical modulator chip modulation rate can reach megabits per second, the domestic consumer's of system that can be used for that Fiber to the home information modulation, and operating voltage is low simultaneously, has only 20 volts, can realize the practicability of device.
Description of drawings
Fig. 1 is the schematic diagram after the substrate 6 surperficial phosphorus diffusions.
Fig. 2 is the schematic diagram behind the growth sacrifice layer silica membrane 7 on the substrate 6.
Fig. 3 is the schematic diagram behind the grown silicon nitride film 8 on the sacrifice layer silica membrane 7.
Fig. 4 is the schematic diagram behind the evaporation aluminium film 9 on the silicon nitride film 8.
Fig. 5 is the schematic diagram after bearing the glue photoetching and corroding the aluminium film 9 formation aluminium film protective layer identical with the required figure of structure.
Fig. 6 is the schematic diagram that reactive ion etching silicon nitride film 8 backs form the silicon nitride film identical with the required figure of structure.
Fig. 7 is the schematic diagram behind the removal aluminium film 9.
Fig. 8 is the schematic diagram that corrosion sacrifice layer silica membrane 7 forms the sacrifice layer silica 7 of contact hole 13 and band figure.
Fig. 9 is the pictorial diagram of the metal electrode of positive glue 14 photoetching formation.
Figure 10 is the schematic diagram after sputter prepares titanium, platinum, golden composite metal membrane 15.
Figure 11 is that positive glue 14 is removed the top electrode 16 of back formation and the schematic diagram of bottom electrode 5 together with the composite metal membrane on it 15.
Figure 12 is the schematic diagram that negative glue photoetching forms protective layer 17.
Figure 13 is corrosion sacrifice layer silica 7 obtain suspending a schematic diagram behind the chamber.
Figure 14 is the protective layer 17 that removes the surface with the reactive ion method, forms the final structure of device, and this figure and above each figure are along the general structure schematic diagram of horizontal line H direction among planar structure signal Figure 16.
Figure 15 is the structural representation of planar structure signal Figure 16 along diagonal C direction.
Figure 16 general plane schematic diagram, wherein 3 is optical windows, its diameter is 18 microns, the 2nd, by the cantilever beam that contains top electrode 16 of device, the 1st, the contact disc of top electrode 16, and and the electrode at place such as cantilever beam 2 be connected as a single entity, the 4th, etch pit, i.e. vacant part among Figure 14.
The specific embodiment
In the foregoing invention content, technical scheme of the present invention is illustrated in detail that this scheme is exactly the specific embodiment of the present invention, just no longer repeat here.The present invention is particularly suitable for being used for preparing silicon-base micro-mechanical optical modulator chip.The silicon-base micro-mechanical optical modulator is in the optical communication field, particularly in Fiber to the home system, has wide practical use, and be one of main direction of contemporary MOEMS (MOEMS) research.The micromechanics optical modulator is the Primary Component in the modern optical communication system, can be easily realizes the passive light modulation in Fiber to the home system.
Claims (1)
1. silicon-base micro-mechanical optical modulator chip production method is characterized in that operating procedure:
First step silicon chip is prepared and the phosphorus diffusion
Select for use n type silicon to do substrate (6), the thickness of substrate (6) and resistivity distribution are 350 microns and 50 ohmcms, with standard technology substrate (6) are cleaned and oven dry; Carry out phosphorus diffusion, process conditions: 1080 ℃ of furnace temperature, diffuse source POCL with the diffusion technique of standard
3(0 ℃), phosphorus source are respectively the N of 160 ml/min and 35 ml/min by flow
2And O
2Carry and enter pipeline, flow is the N of 300 ml/min
2Make protection gas and directly enter pipeline, carry out the phosphorus diffusion after system is saturated, be 30 minutes diffusion time, the square resistance R of the thin layer that diffusion obtains
≤ 5 ohm/;
Second step preparation sacrifice layer silica membrane (7)
With the tetraethoxysilance is that reaction source is used low pressure chemical vapor deposition technology deposition silicon dioxide film (7) down in oxygen atmosphere and at 600 ℃, and the thickness of this film is 1 micron;
The 3rd step preparation silicon nitride film (8)
With ammonia and silane is that reaction source prepares silicon nitride film (8) with low pressure chemical vapor deposition technology down at 900 ℃, and the thickness of this film is 0.2 micron;
The 4th step evaporation of aluminum film (9)
With vacuum evaporation technology evaporation aluminium film (9), the thickness of this aluminium film is 1 micron;
The negative glue photoetching of the 5th step is also corroded aluminium film (9)
With negative glue photoetching, obtain the figure that silicon nitride film (8) needs, through phosphoric acid corrosion, make aluminium film (9) become the aluminium film identical with the required figure of structure;
Six-step process ion etching silicon nitride film (8)
Under aluminium film (9) protection, with the sulfur hexafluoride is source of the gas, with reactive ion etching silicon nitride film (8), silicon nitride film (8) is become and the identical silicon nitride film of the required figure of structure, the diameter of the middle circular portion of silicon nitride film (8) is 38 microns, and the length of four cantilever beams of silicon nitride film (8) and width are respectively 25 microns and 12 microns;
The 7th step was removed aluminium film (9)
With 80 ℃ phosphoric acid the aluminium film (9) on surface is eroded fully;
The 8th step corrosion sacrifice layer silica membrane (7)
Locate sacrifice layer silica membrane (7) with the device architecture place with buffered hydrofluoric acid solution erosion removal contact hole (13), sacrifice layer silica membrane (7) is become and the identical silica membrane of the required figure of structure, the prescription of buffered hydrofluoric acid solution is HF: NH
4F: H
2O=3 volume: 6 volumes: 9 volumes;
The 9th positive glue photoetching of step
Make the figure of metal electrode by lithography with positive glue (14), the figure that does not have positive glue (14) part is exactly the figure of final metal electrode;
The tenth step preparation composite metal membrane (15)
Prepare titanium, platinum, golden composite metal membrane (15) with magnetron sputtering method, wherein, ground floor is a titanium film, and the thickness of titanium film is 0.02 micron, and second layer platinum film, the thickness of platinum film are 0.1 micron, the 3rd layer of golden film, and the thickness of golden film is 0.2 micron;
The 11 step was finished electrode preparation
The positive glue (14) of the 9th step photoetching is come along together with the composite metal membrane on it (15) and removes in acetone with ultrasonic wave, obtain top electrode (16) and bottom electrode (5);
The negative glue photoetching of the 12 step
As protective layer (17), etch pit is exposed in photoetching with negative glue, the protection remainder;
The 13 step corrosion sacrifice layer silica (7) obtains the chamber that suspends
Under 38 ℃ temperature conditions, corrode sacrifice layer silica (7) with hydrofluoric acid cushioning liquid, remove sacrifice layer silica (7), discharge device architecture, obtain the chamber that suspends, put into ethanolic solution after the cleaning and dewater, drying, the prescription of hydrofluoric acid cushioning liquid is HF: NH
4F: H
2O=3 volume: 6 volumes: 9 volumes;
The tenth four-step reaction ion removes photoresist
Remove surperficial protective layer (17) with the reactive ion method, obtain complete silicon-base micro-mechanical optical modulator chip, wherein the diameter of optical window (3) is 18 microns.
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| CNB2004100257892A CN1321054C (en) | 2004-07-06 | 2004-07-06 | Preparation method of silicon-based micro mechanical photomodulator chip |
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| CN1321054C true CN1321054C (en) | 2007-06-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420620C (en) * | 2005-03-29 | 2008-09-24 | 中国科学院微电子研究所 | Method for manufacturing electric tunable optical filter chip of micro-electrical-mechanical system |
| CN100349047C (en) * | 2005-03-29 | 2007-11-14 | 中国科学院微电子研究所 | Passivation protection method for silicon-based liquid crystal aluminium reflection electrode |
| CN1322608C (en) * | 2005-05-20 | 2007-06-20 | 清华大学 | Process for preparing carbon electrode array with high surface area and high gap filling capacity |
| CN100509610C (en) * | 2005-11-24 | 2009-07-08 | 中国科学院微电子研究所 | Method for preparing microelectromechanicl system vibration jet actuator |
| JP5898690B2 (en) * | 2010-12-07 | 2016-04-06 | エスピーティーエス テクノロジーズ リミティド | Process for manufacturing electro-mechanical systems |
| CN103193200B (en) * | 2013-03-14 | 2016-04-13 | 西安工业大学 | The graphic method of collodion film |
| CN104347363B (en) * | 2013-08-02 | 2018-05-08 | 无锡华润上华半导体有限公司 | A kind of method of the hard masking layer of disk after the deep plough groove etched technique of removal |
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| CN1380245A (en) * | 2002-05-16 | 2002-11-20 | 华东师范大学 | Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine |
| CN1402034A (en) * | 2002-09-29 | 2003-03-12 | 吉林大学 | Using (110) silicon wafer to manufacture micromechanical photoswitch, array of photoswitch and method |
| CN2585251Y (en) * | 2002-12-17 | 2003-11-05 | 华东师范大学 | Electric adjustable optical attenuator |
| CN1487333A (en) * | 2003-05-26 | 2004-04-07 | 华东师范大学 | Prepn process of NEMS electrically adjustable light attenuator chip |
| CN1489180A (en) * | 2003-09-05 | 2004-04-14 | 中国电子科技集团公司第十三研究所 | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380245A (en) * | 2002-05-16 | 2002-11-20 | 华东师范大学 | Production method of millimetric wave voltage-controlled phase shifter for microelectronic machine |
| CN1402034A (en) * | 2002-09-29 | 2003-03-12 | 吉林大学 | Using (110) silicon wafer to manufacture micromechanical photoswitch, array of photoswitch and method |
| CN2585251Y (en) * | 2002-12-17 | 2003-11-05 | 华东师范大学 | Electric adjustable optical attenuator |
| CN1487333A (en) * | 2003-05-26 | 2004-04-07 | 华东师范大学 | Prepn process of NEMS electrically adjustable light attenuator chip |
| CN1489180A (en) * | 2003-09-05 | 2004-04-14 | 中国电子科技集团公司第十三研究所 | Absolute-dry-method deep-etching micro-mechanical processing method based on silocon-silicon linkage |
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