CN103193200B - The graphic method of collodion film - Google Patents
The graphic method of collodion film Download PDFInfo
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- CN103193200B CN103193200B CN201310080874.8A CN201310080874A CN103193200B CN 103193200 B CN103193200 B CN 103193200B CN 201310080874 A CN201310080874 A CN 201310080874A CN 103193200 B CN103193200 B CN 103193200B
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Abstract
The invention discloses a kind of graphic method of the collodion film be coated on substrate.The method comprises the steps: to utilize membrane deposition method on collodion film, deposit the corrosion-prone mask layer of a kind of appearance; Utilize the methods such as the photoetching in micro-processing technology, development, corrosion that this mask layer is processed, obtain the mask layer patterns of required collodion film pattern; Utilize acetone to remove the collodion film come out, recycling mask layer material corrosive liquid erodes the mask layer on surface, the final minute pattern obtained required for collodion film.The advantages such as the method can produce the micro-nano graph of collodion film subtly, and it is low to have material therefor cost, and method is simple, easy to operate, solve a graphical difficult problem for current collodion film.
Description
Technical field
The present invention relates to photoelectric device Micrometer-Nanometer Processing Technology field, refer in particular to a kind of graphic method that can be used for the retrofit of collodion film.
Background technology
The trade name of collodion is trinitro cellulose, having another name called collodion, Ke Luoding, Goethe ground grace etc., is acted on absorbent cotton by red fuming nitric acid (RFNA) and the concentrated sulfuric acid and obtained, easy firing but not easy to explode, be soluble in the equivalent mixed liquor of absolute alcohol and ether and become liquid, also dissolve in acetone or cloves wet goods.Collodion solvent has very strong volatility, and the film formed after volatilization is water insoluble and have compactness, can be used for manufacturing varnish, engaging cream, film, olivet, artificial leather, is often used as embedding and the section agent of tissue in histology.
Collodion is of many uses.Be coated with on a surface of an, solvent evaporates rapidly, leaves the watertight tough and tensile film of one deck.Do not add the collodion of other drug, for sealing bottle cork and protection wound etc.Add the collodion of other drug, its film, apart from outside protective action, also has the effect extending drug effect and skin contact.Except above purposes, collodion also has important use at optical field, has very high permeability in visible-range, and mean transmissivity can reach 92%, and has a lot of strong absworption peaks at infrared region, and overall absorption is higher, and absorption coefficient reaches as high as 1.3/um.This characteristic is just in time required for the non-electrical readout liquid crystal of development infrared non-brake method detection array device.
But up to the present, also without any the report about the Film patterning method of collodion, and collodion film is soluble in acetone, alcohol, ether, caryophyllus oil and their mixed liquor etc., and these reagent are the reagent commonly used in photoelectric device microfabrication, be difficult to avoid, Given this, be necessary very much to propose a kind of method Film patterning for collodion, solve the difficult problem that collodion is applied in the opto-electronic device.
Summary of the invention
The technical problem to be solved in the present invention is the graphic method providing a kind of collodion film, thus realizes the application of collodion film in infrared detector.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: the graphic method of collodion film, comprises the following steps:
1) on collodion film, deposition is a kind of holds corrosion-prone mask layer;
2) method of employing photoetching, development makes the photoetching offset plate figure of required figure at mask layer;
3) adopt the method etching mask layer of chemical solution corrosion, obtain the mask layer patterns of required figure;
4) utilize the photoresist of acetone erosion removal mask layer and do not have the collodion film of mask layer portions, recycling mask layer corrosive liquid removes remaining mask layer, obtains the figure needed for collodion.
Above-mentioned steps 1) in mask layer material be the metal and the oxide that are insoluble to photoresist, developer solution and water.
Above-mentioned steps 2) in photoetching technique refer to optical exposure or electron beam exposure method.
Above-mentioned steps 4) in the lateral dimension of figure be less than 100nm.
Advantage of the present invention is as follows:
1. the present invention adopts the photoetching technique such as optical exposure or electron beam exposure, can produce the collodion figure of micro-nano;
2. material therefor cost of the present invention is low, is all mainly the coating materials, solution etc. of some routines;
3. method therefor of the present invention is simple, and easy to operate, those of ordinary skill all can be competent at;
4. in operating process of the present invention; consider the factor such as the material used in each step and the mutual protection between chemical reaction characteristic, solution and each layer thereof; avoid collodion film in corresponding step, be soluble in acetone, alcohol, ether, caryophyllus oil and their mixed liquor etc., solve a graphical difficult problem for current collodion film.
Accompanying drawing explanation
Fig. 1 is the graphic method flow chart of collodion film of the present invention.
Detailed description of the invention
Technical scheme provided by the present invention is:
1. first the present invention utilizes the method for thin film deposition on collodion film, deposit the corrosion-prone mask layer of a kind of appearance, and described mask layer material is the metal and the oxide that are insoluble to photoresist, developer solution and water;
2. photoresist in spin coating on print, then utilizes the photoetching method of optical exposure or electron beam exposure to expose; Then utilize developer solution to develop, obtain the photoetching offset plate figure of required collodion film;
3. utilize mask layer material corrosive liquid to corrode, the corrosive liquid in this process only reacts with mask layer, and does not react with collodion, photoresist, so just photoetching offset plate figure is transferred on mask layer;
4. utilize acetone soln remove the photoresist on mask layer and erode the collodion film exposed, thus Graphic transitions on collodion film; Recycling corrosive liquid erodes remaining mask layer material, just obtains required collodion figure.
Below in conjunction with drawings and Examples, the present invention is described in detail.
Embodiment one
The block pattern of collodion film
1. the method utilizing Magnetron Sputtering Thin Film to deposit deposits the Cu film that one deck is about 100nm on collodion film;
2. AZ5214 photoresist in spin coating on print, then carries out front baking, utilizes square mask plate, adopts optical exposure method to carry out 50um*50um exposure; Utilize developer solution to develop, obtain the photoetching offset plate figure of required collodion film;
3. utilize FeCl
3corrosive liquid corrodes, and photoetching offset plate figure is transferred on Cu film;
4. utilize acetone soln to remove the photoresist on Cu film and erode the collodion film that Cu film exposes, Graphic transitions on collodion film; Utilize FeCl
3corrosive liquid erodes remaining Cu film, the collodion figure needed for acquisition, and the lateral dimension of described figure is 1000nm.
Embodiment two
The nano wire of collodion film is graphical
1. the method utilizing Magnetron Sputtering Thin Film to deposit deposits the nickel film that one deck is about 100nm on collodion film;
2. PMMA glue in spin coating on print, then carries out front baking, utilizes lines mask plate, adopts electron beam exposure method to carry out the wide exposure of 20nm; Utilize developer solution to carry out developing, fixing, obtain the PMMA glue pattern of required collodion film;
3. utilize HCl corrosive liquid to corrode, photoetching offset plate figure is transferred on nickel film;
4. utilize acetone soln to remove the photoresist on nickel film and erode the collodion film that nickel film exposes, Graphic transitions on collodion film; Utilize HCl corrosive liquid to erode remaining nickel film, the collodion figure needed for acquisition, the lateral dimension of described figure is 50nm.
Embodiment three
The collodion that SiO2 makes mask layer is graphical
1. utilize the methods such as electron beam evaporation to deposit on collodion film SiO2 film that one deck is about 100nm;
2. photoresist in spin coating on print, then carries out front baking, utilizes oval mask plate, adopts electron beam exposure method to carry out the graph exposure of specific dimensions; Utilize developer solution to carry out development treatment, obtain the photoetching offset plate figure of required collodion film;
3. utilize HF corrosive liquid to corrode, photoetching offset plate figure is transferred on SiO2 film;
4. utilize acetone soln to remove the photoresist on SiO2 film and erode the collodion film that SiO2 film exposes, Graphic transitions on collodion film; Utilize HF corrosive liquid to erode remaining SiO2 film, the collodion figure needed for acquisition, the lateral dimension of described figure is 3000nm.
The above-mentioned description to embodiment can understand and apply the invention for ease of those skilled in the art.Person skilled in the art obviously easily can make various amendment to these embodiments, and General Principle described herein is applied in other embodiment and need not through performing creative labour.Therefore, the invention is not restricted to embodiment here, those skilled in the art are according to announcement of the present invention, and the improvement made for the present invention and amendment all should within protection scope of the present invention.
Claims (1)
1. the graphic method of collodion film, is characterized in that: comprise the following steps:
1) on collodion film, deposition is a kind of holds corrosion-prone mask layer;
2) method of employing photoetching, development makes the photoetching offset plate figure of required figure at mask layer;
3) adopt the method etching mask layer of chemical solution corrosion, obtain the mask layer patterns of required figure;
4) utilize the photoresist of acetone erosion removal mask layer and do not have the collodion film of mask layer portions, recycling mask layer corrosive liquid removes remaining mask layer, obtains the figure needed for collodion;
Mask layer material in described step 1) is the metal or the oxide that are insoluble to photoresist, developer solution and water;
Described step 2) in photoetching technique refer to optical exposure or electron beam exposure method;
The lateral dimension of the figure in described step 4) is less than 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310080874.8A CN103193200B (en) | 2013-03-14 | 2013-03-14 | The graphic method of collodion film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310080874.8A CN103193200B (en) | 2013-03-14 | 2013-03-14 | The graphic method of collodion film |
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| CN103193200A CN103193200A (en) | 2013-07-10 |
| CN103193200B true CN103193200B (en) | 2016-04-13 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1525527A (en) * | 2003-09-17 | 2004-09-01 | 华东师范大学 | Preparation method for silicon-based micro machine microwave/radiofrequency switch chip |
| CN1594066A (en) * | 2004-07-06 | 2005-03-16 | 华东师范大学 | Preparation method of silicon-based micro mechanical photomodulator chip |
| CN1812021A (en) * | 2006-02-16 | 2006-08-02 | 上海交通大学 | Method for producing amorphous FeCuNbCrSiB film solenoid micro-inductance device |
| CN1970432A (en) * | 2005-11-24 | 2007-05-30 | 中国科学院微电子研究所 | Microelectromechanicl system vibration jet actuator and its preparation method |
| CN101037185A (en) * | 2007-01-12 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Method for making nano-groove on quartz glass |
-
2013
- 2013-03-14 CN CN201310080874.8A patent/CN103193200B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1525527A (en) * | 2003-09-17 | 2004-09-01 | 华东师范大学 | Preparation method for silicon-based micro machine microwave/radiofrequency switch chip |
| CN1594066A (en) * | 2004-07-06 | 2005-03-16 | 华东师范大学 | Preparation method of silicon-based micro mechanical photomodulator chip |
| CN1970432A (en) * | 2005-11-24 | 2007-05-30 | 中国科学院微电子研究所 | Microelectromechanicl system vibration jet actuator and its preparation method |
| CN1812021A (en) * | 2006-02-16 | 2006-08-02 | 上海交通大学 | Method for producing amorphous FeCuNbCrSiB film solenoid micro-inductance device |
| CN101037185A (en) * | 2007-01-12 | 2007-09-19 | 中国科学院上海微系统与信息技术研究所 | Method for making nano-groove on quartz glass |
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| CN103193200A (en) | 2013-07-10 |
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