CN1970432A - Microelectromechanicl system vibration jet actuator and its preparation method - Google Patents
Microelectromechanicl system vibration jet actuator and its preparation method Download PDFInfo
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- CN1970432A CN1970432A CN 200510086971 CN200510086971A CN1970432A CN 1970432 A CN1970432 A CN 1970432A CN 200510086971 CN200510086971 CN 200510086971 CN 200510086971 A CN200510086971 A CN 200510086971A CN 1970432 A CN1970432 A CN 1970432A
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Abstract
It relates to a MEMS vibrating injection implementer chip in the microelectronics, featuring in thirteen steps: 1. growing silicon nitride film on both sides of the silicon substrate using low pressure chemcial vapour deposition; 2. photoetching electrode figures on the front of the silicon substrate, 3. steaming chrome/metal thin film, 4. ultrasonic stripping, 5. mask etching, 6. photoetching window figures at the back of the silicon substrate, 7. glue mask etching the silicon nitride at the back of the corrosion window, 8. wet corrosion releasing flaping action structure, 9. steaming chrome/metal thin film on the second silicon plate, 10. Coating photo resist on the metal film surface of the second silicon plate, 11. Binding the back with of the first silicon plate with the second silicon plate coated with photo resist, 12. Cutting into linear components, 13. Welding electrode conductor on the metal film of the up and down silicon plates respectively. It applies to small sized unmanned aerial vehicle.
Description
Technical field
The present invention relates to the microelectronic component preparing technical field, particularly a kind of MEMS vibration jet actuator chip production method,
Background technology
As the complicated new way that flows of control on the small-sized unmanned aircraft, have that cost is low, energy consumption is little, distributed control based on the miniature jet actuator of microelectromechanical systems (MEMS) technology, and to characteristics such as the no negative effects of flowing.
The present invention has provided the preparation method of MEMS vibration jet actuator chip core part.MEMS miniature jet actuator is for the aerodynamic force control of micro air vehicle, unmanned plane and big angle of attack maneuvering flight fighter plane, and the noise when reducing torpedo, navigation of submarine etc. has important use and is worth.
The MEMS fluidic hardware that is applied to fluid control is not at present seen relevant document and report at home as yet.
Summary of the invention
The present invention aims to provide a kind of MEMS vibration jet actuator chip production method.
For achieving the above object, technical solution of the present invention is: micro-electrical-mechanical system vibration jet actuator chip production method comprises the following steps:
1, adopt the method for low-pressure chemical vapor deposition at the two-sided grown silicon nitride film of silicon substrate;
2, carve the top electrode figure at the silicon chip front lighting;
3, evaporation chromium/gold thin film;
4, ultrasonic peeling off;
5, shelter etching;
6, at silicon chip back side photoetching corrosion graph window;
7, the silicon nitride on the glue shelter etching back surface corrosion window;
8, wet etching discharges the chip architecture of flapping;
9, full sheet evaporation chromium/gold thin film on second silicon chip;
10, the golden film specific surface at second silicon chip is coated with the optics photoresist;
11, first silicon chip back is bonding with second silicon chip that scribbles photoresist;
12, be diced into line array device;
13, welding electrode lead-in wire on the golden film of last lower silicon slice respectively.
Described micro-electrical-mechanical system vibration jet actuator chip production method, its concrete operations step is:
The first step: select for use common silicon chip to do substrate, the method that adopts low-pressure chemical vapor deposition is at the two-sided grown silicon nitride film of silicon substrate, and thickness is 1.2 ~ 1.5 microns;
Second step: on silicon nitride film, be coated with the optics photoresist, obtain the bottom electrode figure through behind the exposure imaging;
The 3rd step: the silicon chip after will developing adopts oxygen to remove primer in reactive ion etching, 55 ~ 65 milliliters of per seconds of flow, plasma bias power is 10 ~ 15 watts, remove primer after slice, thin piece send into evaporator immediately, the employing electron beam evaporation process evaporates chromium/gold thin film;
The 4th step: the substrate that evaporated metal film is placed the acetone vessel, and photoresist on the ultrasonic wave removal silicon chip and the chromium/gold thin film on the glue, the dry etching that obtains chromium/gold is sheltered the bottom electrode figure;
The 5th step: it is saturating to adopt dry process reaction ion etching technology that silicon nitride is carved under chromium/gold thin film is sheltered;
The 6th step: be coated with thick photoresist at first substrate back, after exposure, obtain back surface corrosion window graphics to be etched;
The 7th step: under thick glue is sheltered, adopt dry process reaction ion etching technology to carve the silicon nitride at the back side saturating;
The 8th step: entire substrate is put into wet etching liquid corrode, remove the silicon substrate of the redundance under the sheet of flapping, and obtain the chip architecture of flapping;
The 9th step: on second silicon chip, adopt the full sheet evaporation of electron beam evaporation process chromium/gold thin film;
The tenth step: the golden film surface at second silicon chip is coated with the optics photoresist;
The 11 step: first silicon chip back is bonding with second silicon chip that scribbles photoresist;
The 12 step:, be diced into line array device according to the distribution of component graphics on the silicon chip;
The 13 step: welding electrode goes between on the golden film of last lower silicon slice respectively.
Described micro-electrical-mechanical system vibration jet actuator chip production method, described substrate is common silicon chip, thickness is 480 ~ 520 microns.
Described micro-electrical-mechanical system vibration jet actuator chip production method, optics etching glue in described second step, the tenth step is the S9912 optics etching glue, glue is thick to be 1000～1500nm.
Described micro-electrical-mechanical system vibration jet actuator chip production method, in described the 3rd step and the 9th step, deposited by electron beam evaporation technology evaporation chromium/gold thin film is to evaporate chromium thickness 10 ~ 12nm, evaporated gold thickness 55 ~ 65nm then earlier.
Described micro-electrical-mechanical system vibration jet actuator chip production method, dry process reaction ion etching process conditions are that gas adopts SF in described the 5th step and the 7th step
6, 55 ~ 65 milliliters of per seconds of flow, plasma bias power is 60 ~ 80 watts, adds magnetic field, water-cooled.
Described micro-electrical-mechanical system vibration jet actuator chip production method, thick photoresist in described the 6th step is the BP218 optics etching glue, glue is thick to be 3 ~ 4 microns.
The present invention is applied on the small-sized unmanned aircraft, as a kind of new flow control means, can be used for finding new flow performance, can disclose the mobile effective control mechanism that macroscopic view is flowed of minute yardstick that the MEMS device is produced profoundly, provide basic experimental condition for the MEMS device is used for flowing controlling, have important academic significance and using value.
Description of drawings
Fig. 1 to Figure 11 is the technological operation schematic flow sheet of the inventive method.
The specific embodiment
Now be described with reference to the accompanying drawings technical scheme of the present invention.According to above-described micro-electrical-mechanical system (MEMS) vibration jet actuator chip production method, its operating procedure is:
The first step is in silicon chip 101 surperficial two-sided grown silicon nitride films 102 and 103.
As shown in Figure 1, select for use common double to throw silicon chip and do substrate 101, the thickness of substrate is 500 μ m, and the method that adopts low-pressure chemical vapor deposition is in the two-sided grown silicon nitride film 102 of silicon substrate and 103, and thickness is 1.2 ~ 1.5 microns;
The second step photoetching top electrode figure 104.
As shown in Figure 2, be coated with the S9912 optics etching glue on silicon nitride 102, the thick 1000-1500nm of glue obtains top electrode figure 104 through behind the exposure imaging;
The 3rd step evaporation chromium/gold thin film 105.
As shown in Figure 3, adopting electron beam evaporation process evaporation chromium thickness 10nm earlier on the silicon nitride 102 and on the photoresist 104, evaporated gold thickness 60nm obtains chromium/gold thin film 105 then;
Ultrasonic peeling off of the 4th step.
As shown in Figure 4, the substrate that evaporated metal film is placed the acetone vessel, and the chromium/gold thin film 105 on ultrasonic wave removal photoresist 104 and the glue, obtain top electrode figure 106:
The 5th step dry method shelter etching.
As shown in Figure 5, it is saturating to adopt dry process reaction ion etching (RIE) technology that silicon nitride is carved under chromium/gold is sheltered, the row's of obtaining moving plate figure 107;
The 6th step back side photoetching corrosion graph window 108.
As shown in Figure 6, first substrate back is coated with thick photoresist, obtains back surface corrosion window graphics to be etched 108 after exposure;
The 7th step dry etching back side silicon nitride.
As shown in Figure 7, it is saturating to adopt dry process reaction ion etching technology that the silicon nitride at the back side is carved under thick glue is sheltered, and obtains back surface corrosion window 109;
The 8th step wet etching
As shown in Figure 8, entire substrate is put into wet etching liquid corrode, remove the silicon substrate of the redundance under the sheet of flapping, and the chip architecture 110 that obtains flapping;
The 9th step evaporation evaporation chromium/gold thin film 111.
As shown in Figure 9, on second silicon chip, adopt the full sheet evaporation of electron beam evaporation process chromium/gold thin film 111;
The tenth step was coated with optics photoresist 112.
As shown in figure 10, be coated with optics photoresist 112 on the golden film surface of second silicon chip;
The 11 step silicon chip is bonding
As shown in figure 11, first silicon chip back is bonding with second silicon chip that scribbles photoresist;
The 12 step scribing.
Distribution according to component graphics on the silicon chip is diced into line array device;
The 13 step welding lead.
Welding electrode goes between on the golden film of last lower silicon slice respectively, and so far, the preparation of vibration jet actuator chip finishes.
Claims (7)
1 one kinds of micro-electrical-mechanical system vibration jet actuator chip production method is characterized in that, comprise 13 technological operation steps:
1, adopt the method for low-pressure chemical vapor deposition at the two-sided grown silicon nitride film of silicon substrate;
2, carve the top electrode figure at first silicon chip front lighting;
3, evaporation chromium/gold thin film;
4, ultrasonic peeling off;
5, shelter etching;
6, at first silicon chip back side photoetching corrosion graph window;
7, glue shelter etching back side corrosion back side silicon nitride;
8, wet etching discharges the chip architecture of flapping;
9, full sheet evaporation chromium/gold thin film on second silicon chip;
10, be coated with the optics photoresist on the golden film surface of second silicon chip;
11, first silicon chip back is bonding with second silicon chip that scribbles photoresist;
12, be diced into line array device;
13, welding electrode lead-in wire on the golden film of last lower silicon slice respectively.
2. micro-electrical-mechanical system vibration jet actuator chip production method according to claim 1 is characterized in that operating procedure is:
The first step: select for use common silicon chip to do substrate, the method that adopts low-pressure chemical vapor deposition is at the two-sided grown silicon nitride film of silicon substrate, and thickness is 1.2 ~ 1.5 microns;
Second step: on silicon nitride film, be coated with the optics photoresist, obtain the bottom electrode figure through behind the exposure imaging;
The 3rd step: the silicon chip after will developing adopts oxygen to remove primer in reactive ion etching, 55 ~ 65 milliliters of per seconds of flow, plasma bias power is 10 ~ 15 watts, remove primer after slice, thin piece send into evaporator immediately, the employing electron beam evaporation process evaporates chromium/gold thin film;
The 4th step: the substrate that evaporated metal film is placed the acetone vessel, and photoresist on the ultrasonic wave removal silicon chip and the chromium/gold thin film on the glue, the dry etching that obtains chromium/gold is sheltered the bottom electrode figure;
The 5th step: it is saturating to adopt dry process reaction ion etching technology that silicon nitride is carved under chromium/gold thin film is sheltered;
The 6th step: be coated with thick photoresist at first substrate back, after exposure, obtain back surface corrosion window graphics to be etched;
The 7th step: under thick glue is sheltered, adopt dry process reaction ion etching technology to carve the silicon nitride at the back side saturating;
The 8th step: entire substrate is put into wet etching liquid corrode, remove the silicon substrate of the redundance under the sheet of flapping, and obtain the chip architecture of flapping;
The 9th step: on second silicon chip, adopt the full sheet evaporation of electron beam evaporation process chromium/gold thin film;
The tenth step: the golden film surface at second silicon chip is coated with the optics photoresist;
The 11 step: first silicon chip back is bonding with second silicon chip that scribbles photoresist;
The 12 step:, be diced into line array device according to the distribution of component graphics on the silicon chip;
The 13 step: welding electrode goes between on the golden film of last lower silicon slice respectively.
3. micro-electrical-mechanical system vibration jet actuator chip production method according to claim 2 is characterized in that, described substrate is a common double mirror polish silicon chip, and thickness is 480 ~ 520 microns.
4. micro-electrical-mechanical system vibration jet actuator chip production method according to claim 2 is characterized in that, optics etching glue in described second step, the tenth step is the S9912 optics etching glue, and glue is thick to be 1000～1500nm.
5. micro-electrical-mechanical system vibration jet actuator chip production method according to claim 2, it is characterized in that, in described the 3rd step and the 9th step, deposited by electron beam evaporation technology evaporation chromium/gold thin film, be to evaporate chromium thickness 10 ~ 12nm, evaporated gold thickness 55 ~ 65nm then earlier.
6. micro-electrical-mechanical system vibration jet actuator chip production method according to claim 2 is characterized in that, dry process reaction ion etching process conditions are that gas adopts SF in described the 5th step and the 7th step
6, 55 ~ 65 milliliters of per seconds of flow, plasma bias power is 60 ~ 80 watts, adds magnetic field, water-cooled.
7. micro-electrical-mechanical system vibration jet actuator chip production method according to claim 2 is characterized in that, thick photoresist in described the 6th step is the BP218 optics etching glue, and glue is thick to be 3 ~ 4 microns.
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| CNB2005100869713A CN100509610C (en) | 2005-11-24 | 2005-11-24 | Method for preparing microelectromechanicl system vibration jet actuator |
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| CNB2005100869713A CN100509610C (en) | 2005-11-24 | 2005-11-24 | Method for preparing microelectromechanicl system vibration jet actuator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270706A (en) * | 2011-08-31 | 2011-12-07 | 英利能源（中国）有限公司 | Heterotype photovoltaic assembly and screen printing plate method pre-fixing fluid encapsulation technology thereof |
| CN103193200A (en) * | 2013-03-14 | 2013-07-10 | 西安工业大学 | Graphical method of collodion membranes |
| CN103346078A (en) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | Chemical mechanical polishing method |
| CN106542495A (en) * | 2016-12-12 | 2017-03-29 | 墨宝股份有限公司 | A kind of preparation method of micro-electrical-mechanical system vibration jet actuator |
| CN112563124A (en) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | Preparation method of large-area ultrathin hollowed-out hard mask |
Family Cites Families (5)
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| US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
| CN1156680C (en) * | 2001-08-24 | 2004-07-07 | 中国科学院电子学研究所 | Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam |
| US7429495B2 (en) * | 2002-08-07 | 2008-09-30 | Chang-Feng Wan | System and method of fabricating micro cavities |
| CN1289942C (en) * | 2003-05-26 | 2006-12-13 | 华东师范大学 | Prepn process of NEMS electrically adjustable light attenuator chip |
| CN1321054C (en) * | 2004-07-06 | 2007-06-13 | 华东师范大学 | Preparation method of silicon-based micro mechanical photomodulator chip |
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2005
- 2005-11-24 CN CNB2005100869713A patent/CN100509610C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270706A (en) * | 2011-08-31 | 2011-12-07 | 英利能源（中国）有限公司 | Heterotype photovoltaic assembly and screen printing plate method pre-fixing fluid encapsulation technology thereof |
| CN103193200A (en) * | 2013-03-14 | 2013-07-10 | 西安工业大学 | Graphical method of collodion membranes |
| CN103193200B (en) * | 2013-03-14 | 2016-04-13 | 西安工业大学 | The graphic method of collodion film |
| CN103346078A (en) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | Chemical mechanical polishing method |
| CN106542495A (en) * | 2016-12-12 | 2017-03-29 | 墨宝股份有限公司 | A kind of preparation method of micro-electrical-mechanical system vibration jet actuator |
| CN112563124A (en) * | 2020-12-10 | 2021-03-26 | 西安电子科技大学 | Preparation method of large-area ultrathin hollowed-out hard mask |
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| CN100509610C (en) | 2009-07-08 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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