CN110211922A - The etching method for forming through hole of monocrystal thin films on a kind of substrate - Google Patents
The etching method for forming through hole of monocrystal thin films on a kind of substrate Download PDFInfo
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- CN110211922A CN110211922A CN201910442488.6A CN201910442488A CN110211922A CN 110211922 A CN110211922 A CN 110211922A CN 201910442488 A CN201910442488 A CN 201910442488A CN 110211922 A CN110211922 A CN 110211922A
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- thin films
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- hole
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- 238000005530 etching Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 44
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000000609 electron-beam lithography Methods 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000008246 gaseous mixture Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of etching method for forming through hole of monocrystal thin films on substrate, comprising the following steps: monocrystal thin films surface forms via aperture graphic mask layer on substrate；Pass through opening etch monocrystal thin films；Graphic mask layer is removed, the monocrystal thin films of via hole image have been etched；This method and mainstream it is simple extensively different using the bar shaped of conventional etch lithium niobate, but by the mask layer with high etching selection ratio come high-precision thickly etching perforation LiNbO_3 film, and it can realize that substrate and lithium niobate are integrated and controlled with underlying substrate metal interconnection；It is further electrically connected for lithium niobate base device and underlying substrate and important technology basis is provided.
Description
Technical field
The present invention relates to a kind of etching method for forming through hole of monocrystal thin films in technical field of integrated circuits more particularly to substrate.
Background technique
The niobic acid lithium material of monocrystalline is because it is with characteristics such as unique photoelectricity, piezoelectricity and ferroelectricities, in SAW device, light
Electric modulator, piezoelectric transducer and the application of ferroelectric memory field have received widespread attention.Hong-Kong city is come from the recent period
University, the research team of Harvard University have successfully manufactured lithium niobate base modulator on a hyperfrequency micro chip, the modulation
Smaller, the more efficient, data transmission bauds of body product faster, cost it is lower；And research team's success base from Fudan University
It is utilized in ferro-electricity single crystal film (the including but not limited to monocrystalline such as lithium niobate, bismuth ferrite, lithium tantalate, lead zirconate titanate, strontium bismuth tantalate)
Electricdomain domain wall conductivity theory realizes ultrahigh density data storage, these innovative research work will all be expected to change entire electronics
Industry.The lithium niobate monocrystal film for using Smart Cut mode to be bonded on the substrates such as silicon substrate, quartz and lithium niobate base at present is
It gradually opens such as market-oriented application.Based on the development trend of the above technical field, lithium niobate monocrystal film and silicon-based electronic circuits are integrated
It is the inexorable trend of the development of the following lithium niobate base material.However lithium niobate is very difficult to the material of etching, with silicon-based electronic circuits collection
At the via etch process that the problem primarily solved is to LiNbO_3 film.
Summary of the invention
In view of presently, there are above-mentioned deficiency, the present invention provides a kind of etching method for forming through hole of monocrystal thin films on substrate, should
Method and mainstream it is simple extensively different using conventional wet etching lithium niobate bar shaped, pass through covering with high etching selection ratio
Film layer carrys out high-precision thickly etching perforation LiNbO_3 film, and can realize that substrate and lithium niobate are integrated with underlying substrate metal interconnection
And control.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
The etching method for forming through hole of monocrystal thin films on a kind of substrate, the etching method for forming through hole of monocrystal thin films includes on the substrate
Following steps:
Monocrystal thin films surface forms via aperture graphic mask layer on substrate；
Pass through opening etch monocrystal thin films；
Graphic mask layer is removed, the monocrystal thin films of via hole image have been etched.
According to one aspect of the present invention, the etching method for forming through hole is further comprising the steps of: first on monocrystal thin films surface
Form hard mask layer.
According to one aspect of the present invention, the thickness of the hard mask layer is according to the etching selection ratio and thickness with monocrystal thin films
Degree determines.
According to one aspect of the present invention, buffer insulation layer is equipped between the substrate and monocrystal thin films.
According to one aspect of the present invention, proton exchange is passed through in via aperture region of the monocrystal thin films before etching
Processing.
According to one aspect of the present invention, described any used by opening etch monocrystal thin films in following lithographic method
Or a variety of: dry etching, laser processing etching and titanium spread electrochemical etching.
According to one aspect of the present invention, monocrystal thin films are the wafer or side length of diameter 1-300mm on the substrate
For the rectangular bimorph of 1-300mm.
According to one aspect of the present invention, monocrystal thin films are lithium niobate monocrystal film on substrate on the substrate.
The advantages of present invention is implemented: the etching method for forming through hole of monocrystal thin films on substrate of the present invention, including following step
Rapid: monocrystal thin films surface forms via aperture graphic mask layer on substrate；Pass through opening etch monocrystal thin films；Removal figure is covered
Film layer has been etched the monocrystal thin films of via hole image；The simple of this method and mainstream uses conventional etch lithium niobate extensively
Bar shaped is different, but the high-precision thickly etching of LiNbO_3 film is perforated, and can realize substrate and niobium with underlying substrate metal interconnection
Sour lithium is integrated and controls；It is that lithium niobate monocrystal film etching using positive photoresist etches via aperture figure, Huo Zhe on substrate
Lithium niobate monocrystal film surface deposits hard mask material, then etches via aperture figure using positive photoresist, then dry etching
Or graph window is transferred on hard exposure mask by laser processing etching or the mode of titanium diffusion electrochemical etching；Then dry method is used
Etching or laser processing etching or the mode of titanium diffusion electrochemical etching are perforated to LiNbO_3 film and are etched；Realize lithium niobate base
Device and underlying substrate, which are further electrically connected, provides important technology basis.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the cmos circuit on piece lithium niobate monocrystal membrane structure schematic diagram of the embodiment of the present invention two；
Fig. 2 is one layer of metal hard mask schematic diagram of a layer structure of deposition of Fig. 1 embodiment of the present invention；
Fig. 3 is schematic diagram after the photoresist etching development according to Fig. 1 embodiment of the present invention；
Fig. 4 is the transition window figure according to Fig. 1 embodiment of the present invention to hard mask layer schematic diagram；
Fig. 5 is the etching LiNbO_3 film and underlying insulating layer schematic diagram according to Fig. 1 embodiment of the present invention；
Fig. 6 is the final effect figure according to the removal hard mask layer of Fig. 1 embodiment of the present invention；
Fig. 7 is the etching method for forming through hole schematic diagram of monocrystal thin films on substrate described in the embodiment of the present invention one.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment one
As shown in fig. 7, on a kind of substrate monocrystal thin films etching method for forming through hole, the through-hole of monocrystal thin films is carved on the substrate
Etching method the following steps are included:
Step S1: monocrystal thin films surface forms via aperture graphic mask layer on substrate；
In practical applications, monocrystal thin films are lithium niobate monocrystal film on substrate on the substrate；The lithium niobate monocrystal
The substrate type of film includes: silicon wafer, quartz plate, lithium niobate monocrystal piece, cmos circuit wafer.The lithium niobate monocrystal film
For the film of one of the elements such as doping Mg, Fe, Zn, In, Sc, Yr element, doping 0-10mol%.
Since the preparation of lithium niobate monocrystal film also needs one layer of buffering exhausted between the substrate and lithium niobate monocrystal film
Edge layer, insulating layer can be silica, silicon nitride, aluminum oxide, magnesia, hafnium oxide, zirconium oxide, organic matter adhesive
Deng selecting excellently, insulating layer is silica.On the substrate lithium niobate monocrystal film be diameter 1-300mm wafer or
Side length is the rectangular bimorph of 1-300mm.
The via aperture graph technology of the formation can be uv-exposure, electron beam lithography, focused ion beam, nanometer pressure
The technologies such as print are realized.Wherein focused ion beam, it is alternatively possible to positioning etching directly is carried out to LiNbO_3 film, and can nothing
Need mask pattern.
The material of the mask layer (104) can for fluorine-based photoresist, the organic matters such as electron beam lithography glue and Ti,
Ni、Co、Al、W、Ti/Cr、Ni/Cr、TiN、WN、Si3N4、SiO2、Al2O3Equal materials.Wherein, the metallic film and nitride,
When sull is as mask layer, need to be patterned these mask layers, patterned technology can for uv-exposure,
The technologies such as electron beam lithography, focused ion beam, nano impression.
In practical applications, the etching method for forming through hole is further comprising the steps of: first being formed on monocrystal thin films surface and is covered firmly
Film layer.Ti, Ni, Co, Al, W, Ti/Cr, Ni/Cr, TiN, WN, Si may be selected in hard mask material3N4、SiO2、Al2O3Deng.It should manage
Solving can be used as hard exposure mask and is not limited to listed material.The thickness of its hard exposure mask is according to the etching selection ratio with LiNbO_3 film
It determines, does not limit, such as 0.1um, 0.5um, 20um etc. with thickness.
Step S2: pass through opening etch monocrystal thin films；
In practical applications, via aperture region of the monocrystal thin films before etching is handled by proton exchange.
The lithographic method of the lithium niobate monocrystal film includes dry etching, laser processing etching, titanium diffusion electrochemistry quarter
Erosion, wherein the etching gas of dry etching includes fluorine base gas, fluorine base gas and argon gas gaseous mixture, chlorine-based gas, chlorine-based gas
With argon gas gaseous mixture, argon gas.
Step S3: removal graphic mask layer has been etched the monocrystal thin films of via hole image.
In practical applications, it due to the material that niobic acid lithium material is more difficult etching, etches side and substrate is in a clamp
Angle, the slope of about 70-76 degree.Hard exposure mask is eroded using the corrosive liquid of hard exposure mask, can also first corrode hard exposure mask and then carve
Lose SiO2, whether this corrosive liquid for depending primarily on hard exposure mask have corrosiveness to the electrode of lower layer.
Embodiment two
Fig. 1 is lithium niobate monocrystal film (103) structure on cmos circuit wafer (101) in one embodiment of the present of invention
Schematic diagram has one layer of buffer insulation layer (102) in figure between substrate and lithium niobate monocrystal film, and the buffering in the embodiment is exhausted
Edge layer is silica, with a thickness of 2um.Lithium niobate of the relative size in schematic diagram without reference to meaning, i.e., in the embodiment
The thickness (200nm) of film than silica it is thin very much.Structure in figure can be by Smart Cut mode by lithium niobate monocrystal
Film is bonded on substrate.Lithium niobate monocrystal piece (101) is the lithium niobate monocrystal film not adulterated in figure, in some embodiments
In doping range 0-10mol%Mg (0mol%Mg refers to no any doping), and in other embodiments, can adulterate
One of the elements such as Fe, Zn, In, Sc, Yr element.One layer of physical vapour deposition (PVD) is used in sample surface in the embodiment
The Cr metal layer of 100nm thickness is shown in Fig. 2 as hard mask material (104).In some embodiments, hard exposure mask can be not suitable for
Material, and directly use with fluorine-based photoresist or electron beam lithography glue as exposure mask, then etch LiNbO_3 film.In addition
In some embodiments, Ti, Ni, Co, Al, W, Ti/Cr, Ni/Cr, TiN, WN, Si is may be selected in hard mask material3N4、SiO2、Al2O3
Deng.It is to be understood that can be used as hard exposure mask is not limited to listed material.The thickness of its hard exposure mask according to LiNbO_3 film
Etching selection ratio and thickness determine, do not limit, such as 0.1um, 0.5um, 20um etc..Then in the sample of Fig. 2 the embodiment described
One layer of on piece spin coating with fluorine-based photoresist (105), the quick-fried mode of ultraviolet light is aligned on print exposes window to via etch
Figure, after development as shown in Figure 3.Also electron beam lithography can be used or nano impression mode forms graph window.Then make
It spends chrome liquor to get rid of the Cr in window, then impregnates removal in acetone with fluorine-based photoresist, thus graph window
(104b) is transferred on hard mask pattern, as shown in Figure 4.Dry etching (reactive ion etching RIE or induction can also be passed through
Coupled plasma etch ICP) removal.
Fig. 5 show Fig. 1 the embodiment described etching LiNbO_3 film after structure chart, due to niobic acid lithium material be compared with
The material of hardly possible etching, etches side and substrate is in a certain angle, the slope of about 70-76 degree.SF is used in the embodiment6
The dry etching that the gaseous mixture of+Ar is carried out as etching gas.The etching SiO of standard can be used in etching after terminating2Formula
Buffer insulation layer is etched, the electrode of lower layer is exposed.In other embodiments, print passes through proton exchange process before etching
After etch lithium niobate.Then hard exposure mask is eroded using the corrosive liquid of hard exposure mask, can also first corrodes hard exposure mask and then etches
SiO2, whether this corrosive liquid for depending primarily on hard exposure mask have corrosiveness to the electrode of lower layer.The niobium of final via etch
Sour lithium film (103a) and buffer insulation layer (102a) effect are shown in Fig. 6.
The advantages of present invention is implemented: the etching method for forming through hole of monocrystal thin films on substrate of the present invention, including following step
Rapid: monocrystal thin films surface forms via aperture graphic mask layer on substrate；Pass through opening etch monocrystal thin films；Removal figure is covered
Film layer has been etched the monocrystal thin films of via hole image；The simple of this method and mainstream uses conventional etch lithium niobate extensively
Bar shaped is different, but carrys out high-precision thickly etching by the mask layer with high etching selection ratio and perforate LiNbO_3 film, and can be with
Underlying substrate metal interconnection realizes that substrate and lithium niobate are integrated and controlled；It is that lithium niobate monocrystal film etching uses on substrate
Via aperture figure is etched with fluorine-based positive photoresist, or deposits hard mask material in lithium niobate monocrystal film surface, is then used
Via aperture figure is etched with fluorine-based positive photoresist, then dry etching or laser processing etching or titanium spread electrochemical etching
Graph window is transferred on hard exposure mask by mode；Then it is carved using dry etching or laser processing etching or titanium diffusion electrochemistry
The mode of erosion is perforated to LiNbO_3 film and is etched；It is important to realize that lithium niobate base device is further electrically connected offer with underlying substrate
Technical basis.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those skilled in the art is in technical scope disclosed by the invention, and any changes or substitutions that can be easily thought of, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of protection of the claims
It is quasi-.
Claims (8)
1. the etching method for forming through hole of monocrystal thin films on a kind of substrate, which is characterized in that the through-hole of monocrystal thin films is carved on the substrate
Etching method the following steps are included:
Monocrystal thin films surface forms via aperture graphic mask layer on substrate；
Pass through opening etch monocrystal thin films；
Graphic mask layer is removed, the monocrystal thin films of via hole image have been etched.
2. the etching method for forming through hole of monocrystal thin films on substrate according to claim 1, which is characterized in that the via etch
Method is further comprising the steps of: first forming hard mask layer on monocrystal thin films surface.
3. the etching method for forming through hole of monocrystal thin films on substrate according to claim 2, which is characterized in that the hard mask layer
Thickness according to the decision of the etching selection ratio and thickness of monocrystal thin films.
4. the etching method for forming through hole of monocrystal thin films on substrate according to claim 1, which is characterized in that the substrate and list
Buffer insulation layer is equipped between brilliant film.
5. the etching method for forming through hole of monocrystal thin films on substrate according to claim 1, which is characterized in that the monocrystal thin films
Via aperture region before etching is handled by proton exchange.
6. the etching method for forming through hole of monocrystal thin films on substrate according to one of claims 1 to 5, which is characterized in that described
Appoint one or more using in following lithographic method by opening etch monocrystal thin films: dry etching, laser processing etching and titanium
Spread electrochemical etching.
7. the etching method for forming through hole of monocrystal thin films on substrate according to claim 6, which is characterized in that single on the substrate
The rectangular bimorph that the wafer or side length that brilliant film is diameter 1-300mm are 1-300mm.
8. the etching method for forming through hole of monocrystal thin films on substrate according to claim 1, which is characterized in that single on the substrate
Brilliant film is lithium niobate monocrystal film on substrate.
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| CN111180361A (en) * | 2019-12-13 | 2020-05-19 | 贵州航天计量测试技术研究所 | Wet unsealing method for plastic package device |
| WO2022267373A1 (en) * | 2021-06-23 | 2022-12-29 | 江苏鲁汶仪器有限公司 | Method for dry-etching lithium niobate |
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| US20020092823A1 (en) * | 2001-01-16 | 2002-07-18 | Gill Douglas M. | Thin film lithium niobate structure and method of making the same |
| CN105158849A (en) * | 2015-10-26 | 2015-12-16 | 武汉光迅科技股份有限公司 | Lithium niobate optical waveguide device and manufacturing method thereof |
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| US20020092823A1 (en) * | 2001-01-16 | 2002-07-18 | Gill Douglas M. | Thin film lithium niobate structure and method of making the same |
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| CN111180361A (en) * | 2019-12-13 | 2020-05-19 | 贵州航天计量测试技术研究所 | Wet unsealing method for plastic package device |
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Application publication date: 20190906 |