CN101136327A - Stripping preparation method of graphics platinum/titanium metal thin film - Google Patents
Stripping preparation method of graphics platinum/titanium metal thin film Download PDFInfo
- Publication number
- CN101136327A CN101136327A CNA2006101126765A CN200610112676A CN101136327A CN 101136327 A CN101136327 A CN 101136327A CN A2006101126765 A CNA2006101126765 A CN A2006101126765A CN 200610112676 A CN200610112676 A CN 200610112676A CN 101136327 A CN101136327 A CN 101136327A
- Authority
- CN
- China
- Prior art keywords
- platinum
- substrate
- preparation
- metal thin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
This invention relates to a preparation method for peeling off patternized Pt/Ti films including: preparing a sacrifice layer on a chip, patternizing the sacrifice layer by a photoetching technology, etching the sacrifice layer at the place reserving the Pt/Ti metal film and reserving the sacrifice layer at the place where the Pt/Ti metal film is peeled off, preparing a Pt/Ti metal film on the patternized sacrifice layer and discharging the sacrifice layer to peel off a pattern of the film.
Description
Technical field
The present invention relates to the pattern technology field of platinum/titanium (Pt/Ti) metallic film, particularly a kind of high temperature is peeled off the method that method prepares graphical platinum/platinum/titanium metal thin film.
Background technology
The Pt/Ti metallic film often is used as electrode in the manufacturing process of semiconductor and microelectromechanical systems, comparatively commonly used a kind of be the electrode that is used for lead zirconate titanate (PZT) film.Wherein the effect of Ti is in order to strengthen the adhesive force of Pt and base material.At present, the pattern technology of Pt/Ti metallic film mainly contains: wet etching, dry etching, peel off three kinds.Owing to use chloroazotic acid as corrosive liquid in the wet etching of Pt, so erode away comparatively difficulty of figure, the introducing of chloroazotic acid simultaneously makes the compatible variation of technology.There is the equipment cost height in dry etching, and terminal point is difficult to control, shortcomings such as other thin layer of easy damaged.Make in the common lift-off technology of Pt/Ti metallic film with photoresist as peel ply, in order to prevent the coking of photoresist, so the preparation temperature of Pt/Ti metallic film lower (can not be too high) will cause the adhesive force variation of metallic film and matrix like this.
Summary of the invention
The object of the present invention is to provide a kind of high temperature to peel off the method that method prepares graphical platinum/platinum/titanium metal thin film, this method can overcome to be made in the common lift-off technology with photoresist as peel ply, for preventing the photoresist coking, the preparation temperature of Pt/Ti metallic film lower (can not be too high), and the defective of the adhesive force variation of metallic film that causes and matrix.
Technical scheme of the present invention is as follows:
The strip preparation method of graphical platinum/platinum/titanium metal thin film provided by the invention, its step is as follows:
1) preparation one sacrifice layer on the surface of a substrate
By sol-gel method, metal-organic decomposition method, sputtering method, Metalorganic Chemical Vapor Deposition, pulsed laser deposition or hydro thermal method deposit one sacrifice layer on the surface of a substrate;
Described substrate is silicon chip, gallium nitride substrate, sapphire substrate, ruby substrate, quartz substrate, arsenic potassium substrate, silicon carbide substrate, germanium substrate or diamond substrate;
Perhaps for being covered with silicon chip, gallium nitride substrate, sapphire substrate, ruby substrate, quartz substrate, arsenic potassium substrate, silicon carbide substrate, germanium substrate or the diamond substrate of silicon dioxide film, silicon nitride film, polysilicon film or their composite membrane;
Described sacrifice layer is zinc oxide sacrifice layer or aluminum sacrificial layer;
2) sacrifice layer after the preparation graphically
Method with photoetching or etching is carried out graphical treatment to described sacrifice layer, and the place that future, platinum/platinum/titanium metal thin film was stripped from keeps sacrifice layer; All the other sacrifice layers etch away.
3) preparation platinum/titanium metal thin film layer
With preparation platinum/titanium metal thin film layer on the method for sputter or the ion film plating sacrificial layer surface after graphical, in the preparation process of described platinum/titanium metal thin film layer described substrate is heated to 150 ~ 500 ℃;
4) preparation platinum thin layer
Method with sputter or ion film plating prepares the platinum thin layer on described platinum/titanium metal thin film surface, substrate described in the preparation process of described platinum thin layer is heated to 150～500 ℃;
5) graphical platinum/platinum/titanium metal thin film layer
The substrate that is covered with platinum/platinum/titanium metal thin film layer after above-mentioned steps is put into sacrifice layer corrosion liquid, and releasing sacrificial layer is peeled off platinum/platinum/titanium metal thin film layer simultaneously, obtains the platinum/platinum/titanium metal thin film after graphical.
The strip preparation method of graphical platinum/platinum/titanium metal thin film provided by the invention, also comprise: before preparation sacrifice layer on the substrate, on substrate surface, be coated with earlier positive photoresist, the egative forme that utilizes platinum to be prepared/platinum/titanium metal thin film figure is to the positive photoresist photolithographic exposure, or on substrate surface, be coated with negative photoresist, the legal copy of utilizing platinum to be prepared/platinum/titanium metal thin film figure forms and is overlying on on-chip patterned photoresist layer the negative photoresist photolithographic exposure; On patterned photoresist layer surface, prepare sacrifice layer again.
Described sacrificial layer thickness is 0.01～10 μ m.
Described platinum/titanium metal thin film layer thickness is 0.01～1 μ m.
Described platinum thin layer thickness is 0.01～1 μ m.
Described sacrifice layer corrosion liquid is that acid, alkali, ammonium chloride are or/and ammoniacal liquor.
The present invention is directed to the problem of at present graphical Pt/Ti metallic film preparation difficulty, and provide a kind of high temperature stripping means to prepare graphical Pt/Ti metallic film.By at first on substrate material, utilizing technology of preparing deposit 0.01～10 μ m zinc oxide or aluminum sacrificial layers such as sputter, sol-gel process electron beam evaporation; Then, graphical by positive and negative lithography sacrifice layer, the place of Pt/Ti metallic film reservation in the future, sacrifice layer is etched away, the place that future, the Pt/Ti metallic film was stripped from, sacrifice layer is retained.On patterned sacrifice layer, prepare the Pt/Ti metallic film by technology such as sputters, because in the preparation process, substrate heating temperature is at 150～500 ℃, so the tack of Pt/Ti metallic film is fine.At last, whole substrate is placed in corresponding acidity such as phosphoric acid or the alkaline corrosion liquid, and sacrifice layer is corroded in corrosive liquid, and simultaneously, the Pt/Ti metallic film is stripped from, and forms needed figure.Whole technical process simple possible, technical process is easy to control, has avoided the use of strong acid, and Pt/Ti metallic film tack is better simultaneously.
The invention has the advantages that: adopted high temperature to peel off in Pt/Ti metal thin-film pattern process, in the graphical while of realizing the Pt/Ti metallic film, the tack of Pt/Ti metallic film is also fine.This graphical process relatively and dry etch process, equipment is simple, technical process is easy to control, can not cause damage to other film material.For wet etching, improved patterned quality greatly, reduced graphical difficulty, avoided strong acid corrosive liquids such as chloroazotic acid simultaneously, improved graphical process and other preparation technology's compatibility.For traditional lift-off technology, owing to avoid making with photoresist, thereby improved substrate heating temperature when the Pt/Ti metallic film prepares, strengthened the adhesive force of Pt/Ti metallic film and substrate greatly.
Description of drawings:
Fig. 1 is the generalized section after the sacrifice layer preparation;
Fig. 2 is that sacrifice layer is by the generalized section after graphical;
Fig. 3 is the generalized section after the Ti metallic film preparation;
Fig. 4 is the generalized section after the Pt metallic film preparation;
Fig. 5 is that the Pt/Ti metallic film is by the generalized section after graphical.
Embodiment
Describe the present invention in detail with embodiment with reference to the accompanying drawings.
Embodiment 1
1) cleans silicon chip
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
Utilize radio-frequency (RF) sputtering equipment, preparation 0.01 μ m zinc oxide sacrifice layer 2 on the substrate 1 that cleans up; Be coated with positive photoresist on zinc oxide 2 surfaces, the egative forme that utilizes the Pt/Ti metal thin-film pattern utilizes phosphoric acid as corrosive liquid wet method pattern sacrifice layer 3 to the positive photoresist photolithographic exposure;
3) preparation Ti metallic film
The Ti metal film layer 4 of preparation 0.05 μ m on the sacrifice layer 3 of the method for utilizing ion film plating after graphical, in the preparation process of Ti metal film layer 4, substrate 1 is heated to 150 ℃;
4) preparation Pt metallic film
Utilize the method for the method of sputter on Ti metal film layer 4, to prepare the Pt metal film layer 5 of 0.2 μ m, Ti metal film layer 4, in the preparation process of Pt metal film layer 4, substrate 1 is heated to 200 ℃;
5) graphical Pt/Ti metal film layer
Putting into phosphoric acid corrosion liquid through the substrate 1 after the above technology, releasing sacrificial layer 2, patterned Pt/Ti metal film layer, peel off again patterned Pt/Ti metallic film 6.
Embodiment 2
1) cleans the potassium nitride substrate
Clean potassium nitride substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
Utilize dc sputtering equipment, preparation 5 μ m zinc oxide sacrifice layers 2 on the substrate 1 that cleans up; Be coated with negative photoresist on zinc oxide sacrifice layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize phosphoric acid as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of ion beam coating equipment after graphically, substrate heating temperature is at 250 ℃;
4) preparation Pt metallic film
Utilize ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 3
1) cleans arsenic potassium substrate
Clean arsenic potassium substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
On silicon chip 1 surface, be coated with positive photoresist, the egative forme that utilizes the Pt/Ti metal thin-film pattern is to the positive photoresist photolithographic exposure, or on silicon chip 1 surface, being coated with negative photoresist, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure;
Utilize radio-frequency (RF) sputtering equipment, preparation 10 μ m zinc oxide sacrifice layers 2 on substrate 1; Utilize the graphical sacrifice layer 3 of conventional lift-off technology;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.1 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 400 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 1 μ m on Ti metallic film 4, substrate heating temperature is at 500 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 4
1) cleans the sapphire substrate
Clean sapphire substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 0.01 μ m aluminum sacrificial layer 2 on the substrate 1 that cleans up; Be coated with positive photoresist on aluminium 2 surfaces, the egative forme that utilizes the Pt/Ti metal thin-film pattern utilizes phosphoric acid as corrosive liquid wet method pattern sacrifice layer 3 to the positive photoresist photolithographic exposure;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.05 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 150 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.2 μ m on Ti metallic film 4, substrate heating temperature is at 200 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 5
1) cleans silicon chip
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 5 μ m aluminum sacrificial layers 2 on the substrate 1 that cleans up; Be coated with negative photoresist on aluminum sacrificial layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize phosphoric acid as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 250 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into the NaOH corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 6
1) cleans the ruby substrate
Clean ruby substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation aluminum sacrificial layer
On silicon chip 1 surface, be coated with positive photoresist, the egative forme that utilizes the Pt/Ti metal thin-film pattern is to the positive photoresist photolithographic exposure, or on silicon chip 1 surface, being coated with negative photoresist, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure;
Utilize electron beam evaporation equipment, preparation 10 μ m aluminum sacrificial layers 2 on substrate 1; Utilize the graphical sacrifice layer 3 of conventional lift-off technology;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.1 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 400 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 1 μ m on Ti metallic film 4, substrate heating temperature is at 500 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 7
1) cleans quartz substrate
Clean quartz substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
On GaAs substrate 1 surface, be coated with positive photoresist, the egative forme that utilizes the Pt/Ti metal thin-film pattern is to the positive photoresist photolithographic exposure, or on GaAs substrate 1 surface, be coated with negative photoresist, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure;
Utilize radio-frequency (RF) sputtering equipment, preparation 10 μ m zinc oxide sacrifice layers 2 on substrate 1; Utilize the graphical sacrifice layer 3 of conventional lift-off technology;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.1 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 400 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 1 μ m on Ti metallic film 4, substrate heating temperature is at 500 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 8
1) cleaning sic substrate
Respectively with acidic cleaning solution or alkaline cleaning fluid cleaning sic substrate 1, rinse well with deionized water more afterwards earlier;
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 0.01 μ m aluminum sacrificial layer 2 on the substrate 1 that cleans up; Be coated with positive photoresist on aluminium 2 surfaces, the egative forme that utilizes the Pt/Ti metal thin-film pattern utilizes phosphoric acid as corrosive liquid wet method pattern sacrifice layer 3 to the positive photoresist photolithographic exposure;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.05 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 150 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.2 μ m on Ti metallic film 4, substrate heating temperature is at 200 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 9
1) cleans the germanium substrate
Clean germanium substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
Utilize radio-frequency (RF) sputtering equipment, preparation 0.2 μ m zinc oxide sacrifice layer 2 on the substrate 1 that cleans up; Be coated with positive photoresist on zinc oxide 2 surfaces, the egative forme that utilizes the Pt/Ti metal thin-film pattern utilizes phosphoric acid as corrosive liquid wet method pattern sacrifice layer 3 to the positive photoresist photolithographic exposure;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.05 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 300 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.2 μ m on Ti metallic film 4, substrate heating temperature is at 400 ℃;
5) graphical Pt/Ti metallic film
Putting into the HBr corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 10
1) cleans the diamond substrate
Clean diamond substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
Utilize dc sputtering equipment, preparation 0.05 μ m zinc oxide sacrifice layer 2 on the substrate 1 that cleans up; Be coated with negative photoresist on zinc oxide sacrifice layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize HBr as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 300 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid and acetic acid corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 11
1) cleans silicon chip
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
On silicon chip 1 surface, be coated with positive photoresist, the egative forme that utilizes the Pt/Ti metal thin-film pattern is to the positive photoresist photolithographic exposure, or on silicon chip 1 surface, being coated with negative photoresist, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure;
Utilize radio-frequency (RF) sputtering equipment, preparation 6 μ m zinc oxide sacrifice layers 2 on substrate 1; Utilize the graphical sacrifice layer 3 of conventional lift-off technology;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.1 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 500 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 1 μ m on Ti metallic film 4, substrate heating temperature is at 400 ℃;
5) graphical Pt/Ti metallic film
The hybrid corrosion liquid of putting into nitric acid and phosphoric acid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 12
1) cleans silicon chip
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
Utilize dc sputtering equipment, preparation 0.05 μ m zinc oxide sacrifice layer 2 on the substrate 1 that cleans up; Be coated with negative photoresist on zinc oxide sacrifice layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize HBr as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 1 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 300 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into the ammoniacal liquor corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 13
1) cleans the GaAs substrate
Clean GaAs substrate 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards;
2) preparation zinc oxide sacrifice layer
Utilize ion beam coating equipment, preparation 0.01 μ m zinc oxide sacrifice layer 2 on the substrate 1 that cleans up; Be coated with positive photoresist on aluminium 2 surfaces, the egative forme that utilizes the Pt/Ti metal thin-film pattern utilizes phosphoric acid as corrosive liquid wet method pattern sacrifice layer 3 to the positive photoresist photolithographic exposure;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.05 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 150 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.01 μ m on Ti metallic film 4, substrate heating temperature is at 200 ℃;
5) graphical Pt/Ti metallic film
Putting into the ammonium chloride corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 14
1) prepares substrate
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards; On silicon chip, prepare 0.01～10 μ m silica membrane then.
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 5 μ m aluminum sacrificial layers 2 on the substrate 1 that cleans up; Be coated with negative photoresist on aluminum sacrificial layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize phosphoric acid as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 250 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into the NaOH corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 15
1) prepares substrate
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards; On silicon chip, prepare 0.01～10 μ m polysilicon membrane then.
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 5 μ m aluminum sacrificial layers 2 on the substrate 1 that cleans up; Be coated with negative photoresist on aluminum sacrificial layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize phosphoric acid as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 250 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into the NaOH corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 16
1) prepares substrate
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards; On silicon chip, prepare 0.01～10 μ m silicon nitride film then.
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 5 μ m aluminum sacrificial layers 2 on the substrate 1 that cleans up; Be coated with negative photoresist on aluminum sacrificial layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize phosphoric acid as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 250 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into the NaOH corrosive liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Embodiment 17
1) prepares substrate
Clean silicon chip 1 with acidic cleaning solution or alkaline cleaning fluid respectively earlier, rinse well with deionized water more afterwards; On silicon chip, prepare 0.01～10 μ m silicon dioxide and silicon nitride composite membrane then.
2) preparation aluminum sacrificial layer
Utilize ion beam coating equipment, preparation 5 μ m aluminum sacrificial layers 2 on the substrate 1 that cleans up; Be coated with negative photoresist on aluminum sacrificial layer 2 surfaces, the legal copy of utilizing the Pt/Ti metal thin-film pattern forms sacrifice layer photoresist figure to the negative photoresist photolithographic exposure; Utilize phosphoric acid as the graphical sacrifice layer 3 of corrosive liquid wet etching;
3) preparation Ti metallic film
Utilize the Ti metallic film 4 of preparation 0.01 μ m on the sacrifice layer 3 of sputtering equipment after graphically, substrate heating temperature is at 250 ℃;
4) preparation Pt metallic film
Utilize sputtering equipment or ion beam coating equipment to prepare the Pt metallic film 5 of 0.1 μ m on Ti metallic film 4, substrate heating temperature is at 300 ℃;
5) graphical Pt/Ti metallic film
Putting into phosphoric acid corrosion liquid through the substrate after the above technology, releasing sacrificial layer separates Pt/Ti metal thin-film pattern 6 simultaneously.
Claims (6)
1. the strip preparation method of a graphical platinum/platinum/titanium metal thin film, its step is as follows:
1) preparation one sacrifice layer on the surface of a substrate
By sol-gel method, metal-organic decomposition method, sputtering method, Metalorganic Chemical Vapor Deposition, pulsed laser deposition or hydro thermal method deposit one sacrifice layer on the surface of a substrate;
Described substrate is silicon chip, gallium nitride substrate, sapphire substrate, ruby substrate, quartz substrate, arsenic potassium substrate, silicon carbide substrate, germanium substrate or diamond substrate;
Perhaps for being covered with silicon chip, gallium nitride substrate, sapphire substrate, ruby substrate, quartz substrate, arsenic potassium substrate, silicon carbide substrate, germanium substrate or the diamond substrate of silicon dioxide film, silicon nitride film, polysilicon film or their composite membrane;
Described sacrifice layer is zinc oxide sacrifice layer or aluminum sacrificial layer;
2) sacrifice layer after the preparation graphically
Method with photoetching and etching is carried out graphical treatment to described sacrifice layer, and the place that future, platinum/platinum/titanium metal thin film was stripped from keeps sacrifice layer; All the other sacrifice layers etch away.
3) preparation platinum/titanium metal thin film layer
With preparation platinum/titanium metal thin film layer on the method for sputter or the ion film plating sacrificial layer surface after graphical, in the preparation process of described platinum/titanium metal thin film layer described substrate is heated to 150 ~ 500 ℃;
4) preparation platinum thin layer
Method with sputter or ion film plating prepares the platinum thin layer on described platinum/titanium metal thin film surface, substrate described in the preparation process of described platinum thin layer is heated to 150～500 ℃;
5) graphical platinum/platinum/titanium metal thin film layer
The substrate that is covered with platinum/platinum/titanium metal thin film layer after above-mentioned steps is put into sacrifice layer corrosion liquid, and releasing sacrificial layer is peeled off platinum/platinum/titanium metal thin film layer simultaneously, obtains the platinum/platinum/titanium metal thin film after graphical.
2. press the strip preparation method of the described graphical platinum/platinum/titanium metal thin film of claim 1, it is characterized in that, also comprise: before preparation sacrifice layer on the substrate, on substrate surface, be coated with earlier positive photoresist, the egative forme that utilizes platinum to be prepared/platinum/titanium metal thin film figure is to the positive photoresist photolithographic exposure, or on substrate surface, being coated with negative photoresist, the legal copy of utilizing platinum to be prepared/platinum/titanium metal thin film figure forms and is overlying on on-chip patterned photoresist layer the negative photoresist photolithographic exposure; On patterned photoresist layer surface, prepare sacrifice layer again.
3. by the strip preparation method of claim 1 or 2 described graphical platinum/platinum/titanium metal thin films, it is characterized in that described sacrificial layer thickness is 0.01～10 μ m.
4. by the strip preparation method of claim 1 or 2 described graphical platinum/platinum/titanium metal thin films, it is characterized in that described platinum/titanium metal thin film layer thickness is 0.01～1 μ m.
5. by the strip preparation method of claim 1 or 2 described graphical platinum/platinum/titanium metal thin films, it is characterized in that described platinum thin layer thickness is 0.01～1 μ m.
6. by the strip preparation method of the described graphical platinum/platinum/titanium metal thin film of claim 1, it is characterized in that described sacrifice layer corrosion liquid is that acid, alkali, ammonium chloride are or/and ammoniacal liquor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101126765A CN100479102C (en) | 2006-08-29 | 2006-08-29 | Stripping preparation method of graphics platinum/titanium metal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101126765A CN100479102C (en) | 2006-08-29 | 2006-08-29 | Stripping preparation method of graphics platinum/titanium metal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101136327A true CN101136327A (en) | 2008-03-05 |
| CN100479102C CN100479102C (en) | 2009-04-15 |
Family
ID=39160326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101126765A Expired - Fee Related CN100479102C (en) | 2006-08-29 | 2006-08-29 | Stripping preparation method of graphics platinum/titanium metal thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100479102C (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181824A (en) * | 2011-01-27 | 2011-09-14 | 广东银雨芯片半导体有限公司 | Process and structure of patterned substrate and light emitting diode chip |
| CN102576760A (en) * | 2009-10-01 | 2012-07-11 | Lg伊诺特有限公司 | Photovoltaic device and manufacturing method thereof |
| CN101659173B (en) * | 2008-08-28 | 2013-06-19 | 比亚迪股份有限公司 | Method for manufacturing metal patterns |
| CN103663361A (en) * | 2013-12-30 | 2014-03-26 | 哈尔滨理工大学 | Flexible mechanical photoetching stripping process method of silicon substrate or ceramic substrate |
| CN104934293A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Metal layer patterning method |
| CN107732031A (en) * | 2017-09-29 | 2018-02-23 | 京东方科技集团股份有限公司 | The preparation method and organic electroluminescence display panel of organic electroluminescence display panel |
| CN107910299A (en) * | 2017-11-20 | 2018-04-13 | 合肥鑫晟光电科技有限公司 | Array base palte and preparation method thereof, display panel and display device |
| WO2019029171A1 (en) * | 2017-08-08 | 2019-02-14 | 厦门三安光电有限公司 | Sacrificial layer structure, method for peeling off material layer and method for fabricating mirror surface of light emitting diode |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method of preparing the releasable micro-nano structure of large area |
| CN110337710A (en) * | 2017-01-19 | 2019-10-15 | 德克萨斯仪器股份有限公司 | For the patterned sacrificial layer of platinum |
| CN114709131A (en) * | 2022-06-06 | 2022-07-05 | 深圳新声半导体有限公司 | Angle control method in semiconductor metal stripping process |
| CN115021699A (en) * | 2022-07-15 | 2022-09-06 | 苏州臻芯微电子有限公司 | Preparation method of metal layer, bulk acoustic wave filter and preparation method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040238891A1 (en) * | 1995-08-24 | 2004-12-02 | Mitsuhiro Nakamura | Multi-layered structure for fabricating an ohmic electrode and ohmic electrode |
| JP2000345383A (en) * | 1999-06-03 | 2000-12-12 | Sharp Corp | Stamper, manufacture of stamper, waveguide substrate manufactured using the same stamper, and manufacture of waveguide substrate |
| CN1119917C (en) * | 2000-03-31 | 2003-08-27 | 清华大学 | Cantilever-type vibration membrane structure for miniature microphone and loudspeaker and its making method |
| TWI268813B (en) * | 2002-04-24 | 2006-12-21 | Sipix Imaging Inc | Process for forming a patterned thin film conductive structure on a substrate |
-
2006
- 2006-08-29 CN CNB2006101126765A patent/CN100479102C/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101659173B (en) * | 2008-08-28 | 2013-06-19 | 比亚迪股份有限公司 | Method for manufacturing metal patterns |
| CN102576760A (en) * | 2009-10-01 | 2012-07-11 | Lg伊诺特有限公司 | Photovoltaic device and manufacturing method thereof |
| CN102181824A (en) * | 2011-01-27 | 2011-09-14 | 广东银雨芯片半导体有限公司 | Process and structure of patterned substrate and light emitting diode chip |
| CN103663361A (en) * | 2013-12-30 | 2014-03-26 | 哈尔滨理工大学 | Flexible mechanical photoetching stripping process method of silicon substrate or ceramic substrate |
| CN103663361B (en) * | 2013-12-30 | 2016-03-23 | 哈尔滨理工大学 | The flexible mechanical lithography stripping process of a kind of silicon chip or ceramic substrate |
| CN104934293A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Metal layer patterning method |
| CN104934293B (en) * | 2014-03-18 | 2017-12-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of metallic layer graphic method |
| CN110337710A (en) * | 2017-01-19 | 2019-10-15 | 德克萨斯仪器股份有限公司 | For the patterned sacrificial layer of platinum |
| CN110337710B (en) * | 2017-01-19 | 2023-12-26 | 德克萨斯仪器股份有限公司 | Sacrificial layer for platinum patterning |
| WO2019029171A1 (en) * | 2017-08-08 | 2019-02-14 | 厦门三安光电有限公司 | Sacrificial layer structure, method for peeling off material layer and method for fabricating mirror surface of light emitting diode |
| CN107732031A (en) * | 2017-09-29 | 2018-02-23 | 京东方科技集团股份有限公司 | The preparation method and organic electroluminescence display panel of organic electroluminescence display panel |
| CN107910299A (en) * | 2017-11-20 | 2018-04-13 | 合肥鑫晟光电科技有限公司 | Array base palte and preparation method thereof, display panel and display device |
| US10615192B2 (en) | 2017-11-20 | 2020-04-07 | Boe Technology Group Co, Ltd. | Array substrate assembly, method of manufacturing array substrate assembly, display panel and display apparatus |
| CN107910299B (en) * | 2017-11-20 | 2020-05-12 | 合肥鑫晟光电科技有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method of preparing the releasable micro-nano structure of large area |
| CN114709131A (en) * | 2022-06-06 | 2022-07-05 | 深圳新声半导体有限公司 | Angle control method in semiconductor metal stripping process |
| CN115021699A (en) * | 2022-07-15 | 2022-09-06 | 苏州臻芯微电子有限公司 | Preparation method of metal layer, bulk acoustic wave filter and preparation method |
| CN115021699B (en) * | 2022-07-15 | 2022-10-21 | 苏州臻芯微电子有限公司 | Preparation method of metal layer, bulk acoustic wave filter and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100479102C (en) | 2009-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100479102C (en) | Stripping preparation method of graphics platinum/titanium metal thin film | |
| CN100552551C (en) | A kind of strip preparation method of graphics ferroelectric lead zirconate titanate film | |
| JP2016105465A (en) | Plated metal hard mask for vertical nand hole etch | |
| JP2004513515A (en) | Amorphous carbon layer for improved adhesion of photoresist | |
| CN101913553B (en) | Bulk silicon etching and gold silicon bonding combined process method | |
| US7691746B2 (en) | Formation of silicon nitride layer on back side of substrate | |
| CN103715070A (en) | Method for adhesive magnetron sputtering thick film | |
| CN103646883B (en) | A kind of aluminium liner preparation method | |
| CN116759498B (en) | Red light micro LED chip and manufacturing method thereof | |
| CN103996618A (en) | Manufacturing method for TFT electrode lead | |
| WO2009088357A1 (en) | Method for lift-off patterning films on a substrate | |
| CN103832968B (en) | The manufacture method of MEMS | |
| US10297497B2 (en) | Sacrificial layer for platinum patterning | |
| CN112259455B (en) | Method for improving metal residue of Ag surface product with passivation layer structure | |
| CN113512698B (en) | High-precision silicon-based mask plate and preparation method thereof | |
| US8477474B2 (en) | Thin film capacitor | |
| CN104311007A (en) | Preparation method of piezoelectric ceramic transducer (PZT) thick film with micro structure | |
| CN111403502A (en) | Method for preparing contact electrode of infrared detector chip | |
| CN113512697A (en) | High-precision silicon-based mask plate and processing method thereof | |
| JP2000340544A (en) | Manufacture of semiconductor device | |
| CN115458480A (en) | Metal interconnection layer corrosion method | |
| WO2024082322A1 (en) | Hard mask structure for integrated circuit manufacturing, and method for manufacturing integrated circuit device | |
| CN117832325A (en) | Gallium arsenide substrate stripping multiplexing method | |
| US5672282A (en) | Process to preserve silver metal while forming integrated circuits | |
| US20010001736A1 (en) | Minimizing metal corrosion during post metal solvent clean |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090415 Termination date: 20110829 |